# MEMS Oscillator, 24 MHz, SMD, 2mm x 1.6mm, 25 ppm, 3.3 V, SiT8008, LVCMOS / HCMOS

![Product image](https://novapart.co/image/farnell:2850152/)

**URL**: https://novapart.co/products/SIT8008AI-72-33E-24.000000G/mems-oscillator-24-mhz-smd-2mm-x-16mm-25-ppm-33-v
**SKU**: SIT8008AI-72-33E-24.000000G
**Manufacturer**: SITIME
**Category**: Crystals & Oscillators || Oscillators || MEMS Oscillators
**Price**: €0.8790
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Frequency Nom | 24MHz |
| Product Range | SiT8008 |
| Oscillator Case | SMD, 2mm x 1.6mm |
| Supply Voltage Nom | 3.3V |
| Frequency Stability + / - | 25ppm |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -40°C |
| Oscillator Output Compatibility | LVCMOS / HCMOS |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2850152/)

**SiT8008 Low Power Programmable Oscillator** 

 The Smart Timing Choice  The Smart Timing Choice 

 ~~eee~~ The Smart Timing Choice  

## **Features** 

- Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places 

- Operating temperature from -40°C to 85°C. Refer to SiT8918 and SiT8920 for high temperature options 

## **Applications** 

   - Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc 

   - Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc. 

- Excellent total frequency stability as low as ±20 PPM 

- Low power consumption of 3.6 mA typical 

- Programmable drive strength for improved jitter, system EMI reduction, or driving large capacitive loads 

- LVCMOS/HCMOS compatible output 

- Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm 

- Instant samples with Time Machine II and field programmable oscillators 

- Pb-free, RoHS and REACH compliant 

## **Electrical Characteristics[[1]]** 

|**Parameter and Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|**Frequency Range**<br>~~Cn~~|||||||
|**Output Frequency Range**<br>~~GG~~|f<br>~~GG~~|1<br>~~GG~~|–<br>~~GG~~|110<br>~~GG~~|MHz<br>~~GG~~|~~GG~~|
|**Frequency Stability and Aging**<br>~~GG~~<br>~~|~~<br>~~es~~<br>~~ee~~<br>~~ee~~|||||||
|**Frequency Stability**|F_stab|-20<br>~~es~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~|+20<br>~~ee~~<br>~~ee~~|PPM|Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and<br>variations over operating temperature, rated power supply<br>voltage and load (15 pF ± 10%).|
|||-25<br>~~es~~<br>~~ee~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~<br>~~ee~~|+25<br>~~ee~~<br>~~ee~~<br>~~ee~~|PPM||
|||-50<br>~~ee~~<br>~~ee~~|–<br>~~ee ~~<br>~~ee~~|+50<br> ~~ee~~<br>~~ee~~|PPM||
|**Operating Temperature Range**<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~——————E~~|||||||
|**Operating Temperature Range**<br>~~ee~~|T_use|-20<br>~~——————E~~<br>~~Rs~~|–<br>~~——————E~~|+70<br>~~——————E~~|°C<br>~~——————E~~|Extended Commercial<br>~~——————E~~|
|||-40<br>~~——————E~~<br>~~Rs~~|–<br>~~——————E~~|+85<br>~~——————E~~|°C<br>~~——————E~~|Industrial<br>~~——————E~~|
|**Supply Voltage and Current Consumption**<br>~~ee~~<br>~~——————E~~<br>~~Rs~~<br>~~|~~<br>~~ee~~<br>~~ee~~|||||||
|**Supply Voltage**<br>~~|~~|Vdd<br>~~|~~|1.62<br>~~|~~<br>~~ee~~<br>~~ee~~|1.8<br>~~|~~<br>~~ee~~<br>~~ee~~|1.98<br>~~|~~|V<br>~~|~~|ContactSiTimefor 1.5V support<br>~~|~~<br>|
|||2.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.75<br>~~ee~~|V||
|||2.52<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.8<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.08<br>~~ee~~|V||
|||2.7<br>~~ee~~<br>~~ee~~<br>~~es~~|3.0<br>~~ee ~~<br>~~ee~~<br>~~ee~~|3.3<br> ~~ee~~|V||
|||2.97<br>~~ee~~<br>~~es~~<br>~~ee~~|3.3<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.63<br>~~ee~~|V<br>~~ee~~||
|||2.25<br>~~es~~<br>~~ee~~<br>~~Rs~~|–<br>~~ee~~<br>~~ee~~<br>|3.63<br>~~ee~~<br>|V<br>~~ee~~<br>||
|**Current Consumption**<br>~~Bf~~|Idd<br>~~Bf~~|–<br>~~ee~~<br>~~Rs~~|3.8<br>~~ee~~<br>|4.5<br>~~ee~~<br>|mA<br>~~ee~~<br>|No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V<br>|
|||–<br>~~RsPe~~<br>~~Rs~~<br>|3.6<br>~~Pe~~<br>~~ee~~|4.2<br>~~Pe~~<br>~~ee~~|mA<br>~~Pe~~|No load condition, f = 20 MHz, Vdd = 2.5V<br>~~Pe~~|
|||–<br>~~Pe~~<br>~~Rs~~<br>|3.4<br>~~Pe~~<br>~~ee~~|3.9<br>~~Pe~~<br>~~ee~~|mA<br>~~Pe~~|No load condition, f = 20 MHz, Vdd = 1.8V<br>~~Pe~~|
|**OE Disable Current**<br>~~Bf~~|I_OD<br>~~Bf ~~|–<br>~~Rs~~<br>|–<br>~~ee~~|4<br>~~ee~~|mA|Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down|
|||–<br>~~Rs~~<br> ~~a~~<br>~~a~~|–<br>~~ee~~<br>~~ee~~|3.8<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~|Vdd = 1.8V, OE = GND, output is Weakly Pulled Down|
|**Standby Current**<br>~~Bf~~|I_std<br>~~Bf ~~|–<br>~~Rs ~~<br> <br>~~a~~<br>~~a~~|2.6<br> ~~ee~~<br>~~ee~~<br>~~es~~|4.3<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|ST<br>= GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down|
|||–<br>~~a~~<br>~~Rs~~|1.4<br>~~es~~<br>~~es~~|2.5<br>~~es~~|A<br>~~es~~|ST<br>= GND, Vdd = 2.5V, Output is Weakly Pulled Down|
|||–<br>~~a~~<br>~~Rs~~|0.6<br>~~es~~<br>~~es~~|1.3<br>~~es~~|A<br>~~es~~|ST<br>= GND, Vdd = 1.8V, Output is Weakly Pulled Down|
|**LVCMOS Output Characteristics**<br>~~Rs~~<br>~~es es~~<br>~~|~~|||||||
|**Duty Cycle**<br>~~|~~<br>~~GG~~|DC<br>~~|~~<br>~~GG~~|45<br>~~|~~<br>~~GG~~<br>~~Rs~~|–<br>~~|~~<br>~~GG~~|55<br>~~|~~<br>~~GG~~|%<br>~~|~~<br>~~GG~~|All Vdds<br>~~|~~<br>~~GG~~|
|**Rise/Fall Time**<br>~~ee~~|Tr, Tf<br>~~ee~~|–<br>~~Rs~~<br>~~Rs~~|1|2|ns|Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%|
|||–<br>~~Rs~~<br>~~Rs~~|1.3|2.5|ns|Vdd =1.8V, 20% - 80%|
|||–<br>~~Rs~~<br>~~ee~~|–<br>~~ee~~|2<br>~~ee~~|ns<br>~~ee~~|Vdd = 2.25V - 3.63V, 20% - 80%<br>~~ee~~|
|**Output High Voltage**<br>~~ee~~|VOH<br>~~ee~~|90%<br>~~ee~~|–<br>~~ee~~|–<br>~~ee~~|Vdd<br>~~ee~~|IOH = -4 mA (Vdd = 3.0V or 3.3V)<br>IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)<br>IOH = -2 mA (Vdd = 1.8V)<br>~~ee~~|
|**Output Low Voltage**<br>~~ee ~~|VOL<br> ~~ee~~|–<br>~~ee~~|–<br>~~ee ~~|10%<br> ~~ee~~|Vdd<br>~~ee~~|IOL = 4 mA (Vdd = 3.0V or 3.3V)<br>IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)<br>IOL = 2 mA (Vdd = 1.8V)<br>~~ee~~|
|**Input Characteristics**<br>~~|~~<br>~~eG~~<br>~~Ge~~<br>~~GO~~|||||||
|**Input High Voltage**<br>~~eG~~<br>~~se~~|VIH<br>~~eG~~<br>~~se~~|70%<br>~~eG~~<br>~~Ge~~<br>~~se~~<br>~~Ge~~|–<br>~~eG~~<br>~~se~~|–<br>~~eG~~<br>~~GO~~<br>~~se~~<br>~~QO~~|Vdd<br>~~eG~~<br>~~GO~~<br>~~se~~<br>~~QO~~|Pin 1, OE or ST<br>~~eG~~<br>~~GO~~<br>~~se~~<br>~~QO~~|
|**Input Low Voltage**<br>~~se~~<br>~~es~~|VIL<br>~~se~~<br>~~es~~|–<br>~~Ge~~<br>~~se~~<br>~~Ge~~<br>~~es~~<br>~~Rs~~|–<br>~~se~~<br>~~es~~<br>~~ee~~|30%<br>~~GO~~<br>~~se~~<br>~~QO~~<br>~~es~~<br>~~ee~~|Vdd<br>~~GO~~<br>~~se~~<br>~~QO~~<br>~~es~~<br>~~ee eee~~|Pin 1, OE or ST<br>~~GO~~<br>~~se~~<br>~~QO~~<br>~~es~~<br>~~eee~~|
|**Input Pull-up Impedence**<br>~~es~~|Z_in<br>~~es~~|–<br>~~Ge~~<br>~~es~~<br>~~Rs~~|87<br>~~es~~<br>~~ee~~<br>~~es~~|100<br>~~QO~~<br>~~es~~<br>~~ee~~|k<br>~~QO~~<br>~~es~~<br>~~ee eee~~|Pin 1, OE logic high or logic low, or ST<br>logic high<br>~~QO~~<br>~~es~~<br>~~eee~~|
|||2<br>~~es~~<br>~~Rs~~|–<br>~~es~~<br>~~ee~~<br>~~es~~|–<br>~~es~~<br>~~ee~~|M<br>~~es~~<br>~~ee eee~~|Pin 1, ST<br>logic low<br>~~es~~<br>~~eee~~|



1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated. 

**SiTime Corporation Rev. 1.11** 

**Sunnyvale, CA 94085** 

**(408) 328-4400** 

**990 Almanor Avenue** 

**www.sitime.com Revised May 27, 2013** 

**SiT8008 Low Power Programmable Oscillator** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Electrical Characteristics[[1] ] (continued)** 

|**Parameter and Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|**Startup and Resume Timing**|||||||
|**Startup Time**|T_start|–|–|5|ms|Measured from the time Vdd reaches its rated minimum value|
|**Enable/Disable Time**|T_oe|–|–|130|ns|f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles|
|**Resume Time**|T_resume|–|–|5|ms|Measured from the time ST pin crosses 50% threshold|
|**Jitter**|||||||
|**RMS Period Jitter**|T_jitt|–|1.76|3|ps|f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V|
|||–|1.78|3|ps|f = 75 MHz, Vdd = 1.8V|
|**RMS Phase Jitter (random)**|T_phj|–|0.5|0.9|ps|f = 75 MHz,Integration bandwidth = 900 kHz to 7.5 MHz|
|||–|1.3|2|ps|f = 75 MHz,Integration bandwidth = 12 kHz to 20 MHz|



## **Note:** 

1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 

## **Pin Description** 

|**Pin**<br>**Symbol**<br>**Functionality**<br>1<br>OE/ ST<br>Output Enable<br>H or Open[2]: specified frequency output<br>L: output is high impedance. Only output driver is disabled.<br>Standby<br>H or Open[2]: specified frequency output<br>L: output is low (weak pull down). Device goes to sleep mode. Supply<br>current reduces to I_std.<br>2<br>GND<br>Power<br>Electrical ground[3]<br>3<br>OUT<br>Output<br>Oscillator output<br>4<br>VDD<br>Power<br>Power supply voltage[3]<br>~~———~~|**Pin**<br>**Symbol**<br>**Functionality**<br>1<br>OE/ ST<br>Output Enable<br>H or Open[2]: specified frequency output<br>L: output is high impedance. Only output driver is disabled.<br>Standby<br>H or Open[2]: specified frequency output<br>L: output is low (weak pull down). Device goes to sleep mode. Supply<br>current reduces to I_std.<br>2<br>GND<br>Power<br>Electrical ground[3]<br>3<br>OUT<br>Output<br>Oscillator output<br>4<br>VDD<br>Power<br>Power supply voltage[3]<br>~~———~~|**Pin**<br>**Symbol**<br>**Functionality**<br>1<br>OE/ ST<br>Output Enable<br>H or Open[2]: specified frequency output<br>L: output is high impedance. Only output driver is disabled.<br>Standby<br>H or Open[2]: specified frequency output<br>L: output is low (weak pull down). Device goes to sleep mode. Supply<br>current reduces to I_std.<br>2<br>GND<br>Power<br>Electrical ground[3]<br>3<br>OUT<br>Output<br>Oscillator output<br>4<br>VDD<br>Power<br>Power supply voltage[3]<br>~~———~~|**Pin**<br>**Symbol**<br>**Functionality**<br>1<br>OE/ ST<br>Output Enable<br>H or Open[2]: specified frequency output<br>L: output is high impedance. Only output driver is disabled.<br>Standby<br>H or Open[2]: specified frequency output<br>L: output is low (weak pull down). Device goes to sleep mode. Supply<br>current reduces to I_std.<br>2<br>GND<br>Power<br>Electrical ground[3]<br>3<br>OUT<br>Output<br>Oscillator output<br>4<br>VDD<br>Power<br>Power supply voltage[3]<br>~~———~~|OE/ST<br>GND|1<br>4<br>3<br>2<br>**Top View**|VDD<br>OUT|
|---|---|---|---|---|---|---|
|**Notes:**|||||||
||2. A pull-up resistor of <10 kbetween OE/ ST<br>pin and Vdd is recommended in high noise environment.||||||



3. A capacitor value of 0.1 µF between Vdd and GND is recommended. 

## **Absolute Maximum** 

|Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-|Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-|
|---|---|
|mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.||
|**Parameter**<br>**Min.**<br>**Max.**<br>**Unit**<br>**Storage Temperature**<br>-65<br>150<br>°C<br>**VDD**<br>-0.5<br>4<br>V<br>**Electrostatic Discharge**<br>–<br>2000<br>V<br>**Soldering Temperature (follow standard Pb free soldering guidelines)**<br>–<br>260<br>°C<br>**Junction Temperature**<br>–<br>150<br>°C<br>~~SSS~~||
|**Thermal Consideration**||
|**Package**<br>**JA, 4 Layer Board (°C/W)**<br>**JA, 2 Layer Board (°C/W)**<br>**JC, Bottom**<br>**(°C/W)**<br>**7050**<br>191<br>263<br>30<br>**5032**<br>97<br>199<br>24<br>**3225**<br>109<br>212<br>27<br>**2520**<br>117<br>222<br>26<br>**2016**<br>124<br>227<br>26<br>**Environmental Compliance**<br>**Parameter**<br>**Condition/Test Method**<br>**Mechanical Shock**<br>**MIL-STD-883F, Method 2002**<br>**Mechanical Vibration**<br>**MIL-STD-883F, Method 2007**<br>**Temperature Cycle**<br>**JESD22, Method A104**<br>**Solderability**<br>**MIL-STD-883F, Method 2003**<br>**Moisture Sensitivity Level**<br>**MSL1 @ 260°C**<br>~~———~~||



**Page 2 of 11** 

**Rev. 1.11** 

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**SiT8008 Low Power Programmable Oscillator** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Test Circuit and Waveform[[4]]** 

**==> picture [226 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vdd Vout<br>Test<br>Point<br>4 3<br>Power<br>Supply 15pF<br>0.1µF<br>1 2 (including probe<br>and fixture<br>capacitance)<br>Vdd<br>OE/ST Function 1k<br>**----- End of picture text -----**<br>


**Figure 1. Test Circuit** 

**==> picture [147 x 84] intentionally omitted <==**

**----- Start of picture text -----**<br>
tr tf<br>80% Vdd<br>50%<br>20% Vdd<br>High Pulse Low Pulse<br>(TH)<br>(TL)<br>Period<br>**----- End of picture text -----**<br>


**Figure 2. Waveform** 

**Note:** 

**==> picture [168 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
4. Duty Cycle is computed as Duty Cycle = TH/Period.<br>**----- End of picture text -----**<br>


## **Timing Diagrams** 

**==> picture [182 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
90% Vdd, 2.5/2,8/3.3V devices<br>95% Vdd, 1.8V devices Vdd Pin 4 Voltage<br>NO Glitch first cycle<br>T_start<br>CLK Output<br>T_start: Time to start from power-off<br>**----- End of picture text -----**<br>


## **Figure 3. Startup Timing (OE/ST Mode)** 

**==> picture [141 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vdd<br>OE Voltage<br>50% Vdd<br>T_OE<br>CLK Output<br>Fa<br>SUN N<br>T_OE: Time to re-enable the clock output<br>**----- End of picture text -----**<br>


## **Figure 5. OE Enable Timing (OE Mode Only)** 

**==> picture [121 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vdd ST Voltage<br>50% Vdd<br>T_resume<br>CLK Output<br>T_resume: Time to resume from ST<br>**----- End of picture text -----**<br>


**Figure 4. Standby Resume Timing (ST Mode Only)** 

**==> picture [141 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vdd OE Voltage<br>50% Vdd<br>CLK Output<br>T_OE<br>—<br>HZ<br>i<br>T_OE: Time to put the output drive in High Z mode<br>**----- End of picture text -----**<br>


**Figure 6. OE Disable Timing (OE Mode Only)** 

## **Note:** 

5. SiT8008 supports no runt pulses and no glitches during startup or resume. 

**Page 3 of 11** 

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**SiT8008 Low Power Programmable Oscillator** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Performance Plots** 

**==> picture [195 x 491] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 2.5 2.8 3 3.3<br>6.0<br>5.5<br>5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Frequency (MHz)<br>Figure 7. Idd vs Frequency<br>1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>10 30 50 70 90 110<br>Frequency (MHz)<br>Figure 9. RMS Phase Jitter vs Frequency<br>(12 kHz to 20 MHz Integration Bandwidth)<br>1.8 V 2.5 V 2.8 V<br>55<br>54<br>53<br>52<br>51<br>50<br>49<br>48<br>47<br>46<br>45<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Frequency (MHz)<br>Idd (mA)<br>IPJ (ps)<br>Duty Cycle (%)<br>**----- End of picture text -----**<br>


**==> picture [193 x 299] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Frequency (MHz)<br>Figure 8. RMS Period Jitter vs Frequency<br>1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>0.9<br>0.85<br>0.8<br>0.75<br>0.7<br>0.65<br>0.6<br>0.55<br>0.5<br>0.45<br>0.4<br>10 30 50 70 90 110<br>Frequency (MHz)<br>RMS period jitter (ps)<br>IPJ (ps)<br>**----- End of picture text -----**<br>


**Figure 10. RMS Phase Jitter vs Frequency (900 kHz to 20 MHz Integration Bandwidth)** 

**==> picture [193 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-40 -15 10 35 60 85<br>Temperature (°C)<br>Rise Time (ns)<br>**----- End of picture text -----**<br>


**Figure 11. Duty Cycle vs Frequency** 

**Figure 12. Rise Time vs Temperature, 20 MHz Output** 

**Note:** 

6. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 

**Page 4 of 11** 

**Rev. 1.11** 

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> **Low Power Programmable OscillatorSiT8008** tiiTime:e  ~~ee~~ The Smart Timing Choice  

 The Smart Timing Choice  The Smart Timing Choice 

## **Programmable Drive Strength** 

choose to speed up the rise/fall time to 1.68ns by then increasing the drive strength setting on the SiT8008. 

The SiT8008 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: 

The SiT8008 can support up to 60 pF or higher in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables to determine the proper drive strength for the desired combination of output load vs. rise/fall time 

- Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time 

- Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. 

## **SiT8008 Drive Strength Selection** 

Tables 1 through 5 define the rise/fall time for a given capacitive load and supply voltage. 

- Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. 

For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Note section; http://www.sitime.com/support/application-notes. 

1. Select the table that matches the SiT8008 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 

2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 

## **EMI Reduction by Slowing Rise/Fall Time** 

3. Under the capacitive load column, select the desired rise/fall times. 

Figure 13 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 

4. The left-most column represents the part number code for the corresponding drive strength. 

5. Add the drive strength code to the part number for ordering purposes. 

## **Calculating Maximum Frequency** 

Based on the rise and fall time data given in Tables 1 through 4, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: 

**==> picture [396 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
trise=0.05<br>trise=0.1<br>10 trise=0.15<br>0 trise=0.2trise=0.25 as follows:<br>trise=0.3<br>-10 trise=0.35trise=0.4 1<br>-20 trise=0.45 Max Frequency =<br>-30 | 6 x (Trise)<br>-40<br>SSS —<br>-50 Example 1<br>-60 Calculate fMAXMAX for the following condition:<br>-70<br>-80 • Vdd = 1.8V (Table 1)<br>1 3 Harmonic number5 7 9 11 • Capacitive Load: 30 pF<br>Harmonic amplitude (dB)<br>**----- End of picture text -----**<br>


Calculate fMAXMAX for the following condition: 

- Desired Tr/f time = 3 ns (rise/fall time part number code = E) 

**Figure 13. Harmonic EMI reduction as a Function of Slower Rise/Fall Time** 

## **Jitter Reduction with Faster Rise/Fall Time** 

Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to increase rise/fall time (edge rate) of the input clock. Some chipsets would require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The SiT8008 provides up to 3 additional high drive strength settings for very fast rise/fall time. Refer to the Rise/Fall Time Tables to determine the proper drive strength. 

Part number for the above example: SiT8008AI **E** 12-18E-25.000000T 

Drive strength code is inserted here. Default setting is “-” 

## **High Output Load Capability** 

The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8008 device with default drive strength setting, the typical rise/fall time is 1ns for 15 pF output load. The typical rise/fall time slows down to 2.6ns when the output load increases to 45 pF. One can 

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## **Rise/Fall Time (20% to 80%) vs CLOAD Tables** 

|**Drive Strength \ CLOAD**<br>**L**<br>**A**<br>**R**<br>**B**<br>**T**<br>**E or "‐": default**<br>**U**<br>~~fe~~<br>~~I ~~|**5 pF**<br>**15 pF**<br>**30 pF**<br>**45 pF**<br>4.13<br>8.25<br>12.82<br>21.45<br>2.11<br>4.27<br>7.64<br>11.20<br>1.45<br>2.81<br>5.16<br>7.65<br>1.09<br>2.20<br>3.88<br>5.86<br>0.62<br>1.28<br>2.27<br>3.51<br>0.54<br>1.00<br>2.01<br>3.10<br>0.43<br>0.96<br>1.81<br>2.79<br>**Rise/Fall Time Typ (ns)**<br>~~QO~~<br> ~~( (~~|**60 pF**<br>27.79<br>14.49<br>9.88<br>7.57<br>4.45<br>4.01<br>3.65|
|---|---|---|
|**F**|0.34<br>0.88<br>1.64<br>2.54|3.32|
|**Table 2. Vdd = 2.5V Rise/Fall Times for Specific C**||**Vdd = 2.5V Rise/Fall Times for Specific CLOAD**|
|**Drive Strength \ CLOAD**<br>**L**<br>**A**<br>**R**<br>**B**<br>**T or "‐": default**<br>~~(OS~~|**5 pF**<br>**15 pF**<br>**30 pF**<br>**45 pF**<br>3.60<br>7.21<br>11.97<br>18.74<br>1.84<br>3.71<br>6.72<br>9.86<br>1.22<br>2.46<br>4.54<br>6.76<br>0.89<br>1.92<br>3.39<br>5.20<br>0.51<br>1.00<br>1.97<br>3.07<br>**Rise/Fall Time Typ (ns)**<br>~~(OS~~<br>~~(GOR OO~~|**60 pF**<br>24.30<br>12.68<br>8.62<br>6.64<br>3.90<br>~~(OS~~|
|**E**|0.38<br>0.92<br>1.72<br>2.71|3.51|
|**U**|0.30<br>0.83<br>1.55<br>2.40|3.13|
|**F**<br>~~I~~|0.27<br>0.76<br>1.39<br>2.16<br>~~(~~<br>~~(~~<br>~~(~~|2.85|



|**Rise/Fall Time Typ (ns)**<br>~~es~~<br>~~a~~<br>~~Pr~~|**Rise/Fall Time Typ (ns)**<br>~~es~~<br>~~a~~<br>~~Pr~~|**Rise/Fall Time Typ (ns)**<br>~~es~~<br>~~a~~<br>~~Pr~~|**Rise/Fall Time Typ (ns)**<br>~~es~~<br>~~a~~<br>~~Pr~~|**Rise/Fall Time Typ (ns)**<br>~~es~~<br>~~a~~<br>~~Pr~~|**Rise/Fall Time Typ (ns)**<br>~~es~~<br>~~a~~<br>~~Pr~~|
|---|---|---|---|---|---|
|**Drive Strength \ CLOAD**<br>~~ey~~<br>~~Pr~~<br>~~r~~~~**r**ti‘“—<~dtsi‘(~~<br>~~fF~~|**5 pF**<br>~~ey~~<br>~~es~~<br>~~ti‘“—<~dtsi‘(i~~|**15 pF**<br>~~ey~~<br>~~i~~|**30 pF**<br>~~ey~~<br>~~a~~|**45 pF**<br>~~ey~~<br>~~a~~|**60 pF**<br>~~ey~~<br>~~a~~|
|**L**<br>~~Pr~~<br>~~r~~~~**r**ti‘“—<~dtsi‘(~~<br>~~fF~~|6.16<br>~~es~~<br>~~ti‘“—<~dtsi‘(i~~|11.61<br>~~i~~|22.00<br>~~a~~|31.27<br>~~a~~|39.91<br>~~a~~|
|**A**<br>~~Pr~~<br>~~r~~~~**r**ti‘“—<~dtsi‘(~~<br>~~fF~~<br>~~rrt~~<br>~~ti‘i‘~i™SSCCd~~<br>~~fF~~|3.19<br>~~es~~<br>~~ti‘“—<~dtsi‘(i~~<br>~~ti‘i‘~i™SSCCd~~|6.35<br>~~i~~<br>~~ti‘i‘~i™SSCCd~~|11.00<br>~~a~~<br>~~ti‘i‘~i™SSCCd~~|16.01<br>~~a~~<br>~~ti‘i‘~i™SSCCd~~|21.52<br>~~a ~~<br>~~ti‘i‘~i™SSCCd~~|
|**R**<br>~~r~~~~**r**ti‘“—<~dtsi‘(~~<br>~~fF~~<br>~~rrt~~<br>~~ti‘i‘~i™SSCCd~~<br>~~fF~~<br>~~rrti‘“‘<‘id~~<br>~~F~~|2.11<br>~~ti‘“—<~dtsi‘( i~~<br>~~ti‘i‘~i™SSCCd~~<br>~~rrti‘“‘<‘id~~<br>~~ee~~|4.31<br>~~i~~<br>~~ti‘i‘~i™SSCCd~~<br>~~rrti‘“‘<‘id~~<br>~~ns~~|7.65<br>~~ti‘i‘~i™SSCCd~~<br>~~rrti‘“‘<‘id~~<br>~~Gn~~|10.77<br>~~ti‘i‘~i™SSCCd~~<br>~~rrti‘“‘<‘id~~<br>~~RR~~|14.47<br>~~ti‘i‘~i™SSCCd~~<br>~~rrti‘“‘<‘id~~<br>~~(RD~~|
|**B**<br>~~fF~~<br>~~rrti‘“‘<‘id~~<br>~~ee~~<br>~~F~~<br>~~PF~~|1.65<br>~~rrti‘“‘<‘id~~<br>~~ee~~<br>~~ee~~<br>~~(id~~|3.23<br>~~rrti‘“‘<‘id~~<br>~~ee~~<br>~~ns~~<br>~~(id~~|5.79<br>~~rrti‘“‘<‘id~~<br>~~ee~~<br>~~Gn~~|8.18<br>~~rrti‘“‘<‘id~~<br>~~ee~~<br>~~RR~~|11.08<br>~~rrti‘“‘<‘id~~<br>~~ee~~<br>~~(RD~~|
|**T**<br>~~ee~~<br>~~F~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~PF~~<br>~~rrt—SSC~~|0.93<br>~~ee~~<br>~~ee~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~(id~~<br>~~rrt—SSC~~|1.91<br>~~ee~~<br>~~ns~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~(id~~|3.32<br>~~ee~~<br>~~Gn~~<br>~~rrrti‘<—‘~™Sssi~~|4.66<br>~~ee~~<br>~~RR~~<br>~~rrrti‘<—‘~™Sssi~~|6.48<br>~~ee~~<br>~~(RD~~<br>~~rrrti‘<—‘~™Sssi~~|
|**E**<br>~~F~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~PF~~<br>~~rrt—SSC~~<br>~~Prt(ie~~|0.78<br>~~ee ~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~(id~~<br>~~rrt—SSC~~<br>~~(ie~~|1.66<br> ~~ns~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~(id~~|2.94<br>~~Gn ~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~te~~|4.09<br> ~~RR ~~<br>~~rrrti‘<—‘~™Sssi~~<br>~~te~~|5.74<br> ~~(RD~~<br>~~rrrti‘<—‘~™Sssi~~|
|**U**<br>~~PF~~<br>~~rrt—SSC~~<br>~~Prt(ie~~|0.70<br>~~(id~~<br>~~rrt—SSC~~<br>~~(ie~~|1.48<br>~~(id~~|2.64<br>~~te~~|3.68<br>~~te~~|5.09|
|**F or "‐": default**<br>~~Prt(ie~~|0.65<br>~~(ie~~|1.30|2.40<br>~~te~~|3.35<br>~~te~~|4.56|



**Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD** 

|**Rise/Fall Time Typ (ns)**<br>~~aeeseeeens~~<br>~~fF~~|**Rise/Fall Time Typ (ns)**<br>~~aeeseeeens~~<br>~~fF~~|**Rise/Fall Time Typ (ns)**<br>~~aeeseeeens~~<br>~~fF~~|**Rise/Fall Time Typ (ns)**<br>~~aeeseeeens~~<br>~~fF~~|**Rise/Fall Time Typ (ns)**<br>~~aeeseeeens~~<br>~~fF~~|**Rise/Fall Time Typ (ns)**<br>~~aeeseeeens~~<br>~~fF~~|
|---|---|---|---|---|---|
|**Drive Strength \ CLOAD**<br>~~ee~~<br>~~fF~~<br>~~rti‘“—~S~~|**5 pF**<br>~~ee~~<br>~~ae~~<br>~~rti‘“—~S~~|**15 pF**<br>~~ee~~<br>~~es~~<br>|**30 pF**<br>~~ee~~<br>~~ee~~<br>|**45 pF**<br>~~ee~~<br>~~ee~~<br>|**60 pF**<br>~~ee~~<br>~~ns~~<br>|
|**L**<br>~~fF~~<br>~~rti‘“—~SCC~~<br>~~CP~~<br>~~rrti—S~~|3.77<br>~~ae~~<br>~~rti‘“—~SCC~~<br>~~rrti—S~~|7.54<br>~~es~~<br>~~CC~~<br>|12.28<br>~~ee~~<br>~~CC~~<br>|19.57<br>~~ee~~<br>~~CC~~<br>|25.27<br>~~ns~~<br>~~CC~~<br>|
|**A**<br>~~fF~~<br>~~rti‘“—~SCC~~<br>~~CP~~<br>~~rrti—SCO~~<br>~~fF~~<br>~~**r**rti‘<—~~~<br>~~PF~~|1.94<br>~~ae ~~<br>~~rti‘“—~SCC~~<br>~~rrti—SCO~~<br>~~rti‘<—~~~~~**sS**~~|3.90<br> ~~es ~~<br>~~CC~~<br>~~CO~~|7.03<br> ~~ee ~~<br>~~CC~~<br>~~CO~~|10.24<br> ~~ee ~~<br>~~CC~~<br>~~CO~~|13.34<br> ~~ns ~~<br>~~CC~~<br>~~CO~~|
|**R**<br>~~CC~~<br>~~CP~~<br>~~rrti—SCO~~<br>~~fF~~<br>~~**r**rti‘<—~~~<br>~~PF~~<br>~~rtrti‘<“—~~~|1.29<br>~~CC~~<br>~~rrti—SCO~~<br>~~rti‘<—~~~~~**sS**~~<br>~~rtrti‘<“—~~~|2.57<br>~~CC~~<br>~~CO~~|4.72<br>~~CC~~<br>~~CO~~|7.01<br>~~CC~~<br>~~CO~~|9.06<br>~~CC~~<br>~~CO~~|
|**B**<br>~~CO~~<br>~~fF~~<br>~~**r**rti‘<—~~~<br>~~PF~~<br>~~rtrti‘<“—~~~|0.97<br>~~CO~~<br>~~rti‘<—~~~~~**sS**~~<br>~~rtrti‘<“—~~~<br>~~Re Re Gs Gs~~|2.00<br>~~CO~~<br>~~Re Re Gs Gs~~|3.54<br>~~CO~~<br>~~Re Re Gs Gs~~|5.43<br>~~CO~~<br>~~Re Re Gs Gs~~|6.93<br>~~CO~~<br>~~ID~~|
|**T**<br>~~**r**rti‘<—~~~<br>~~PF~~<br>~~rtrti‘<“—~~~<br>~~es~~|0.55<br>~~rti‘<—~~~~~**sS**~~<br>~~rtrti‘<“—~~~<br>~~es~~<br>~~Re Re Gs Gs~~|1.12<br>~~es~~<br>~~Re Re Gs Gs~~|2.08<br>~~es~~<br>~~Re Re Gs Gs~~|3.22<br>~~es~~<br>~~Re Re Gs Gs~~|4.08<br>~~es~~<br>~~ID~~|
|**E or "‐": default**|0.44<br>~~Re Re Gs Gs~~|1.00<br>~~Re Re Gs Gs~~|1.83<br>~~Re Re Gs Gs~~|2.82<br>~~Re Re Gs Gs ~~|3.67<br> ~~ID ~~|
|**U**|0.34<br>~~Rs SY~~|0.88<br>~~Rs SY RD~~|1.64<br>~~RD~~|2.52<br>~~GREED~~|3.30<br>~~EN~~|
|**F**<br>~~ee~~|0.29<br>~~ee~~<br>~~Rs SY~~|0.81<br>~~ee~~<br>~~Rs SY RD~~|1.48<br>~~ee~~<br>~~RD~~|2.29<br>~~ee~~<br>~~GREED~~|2.99<br>~~ee~~<br>~~EN~~|



**Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD** 

**Table 4. Vdd = 3.0V Rise/Fall Times for Specific CLOAD** 

|**Rise/Fall Time Typ (ns)**<br>~~eses~~|**Rise/Fall Time Typ (ns)**<br>~~eses~~|**Rise/Fall Time Typ (ns)**<br>~~eses~~|**Rise/Fall Time Typ (ns)**<br>~~eses~~|**Rise/Fall Time Typ (ns)**<br>~~eses~~|**Rise/Fall Time Typ (ns)**<br>~~eses~~|
|---|---|---|---|---|---|
|**Drive Strength \ CLOAD**<br>~~ee~~|**5 pF**<br>~~ee~~<br>~~es~~<br>~~es~~|**15 pF**<br>~~ee~~<br>~~es~~<br>~~ee~~|**30 pF**<br>~~ee~~|**45 pF**<br>~~ee~~|**60 pF**<br>~~ee~~|
|**L**<br>~~ee~~|3.39<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|6.88<br> ~~es~~<br>~~ee~~<br>~~ee~~|11.63<br>~~ee~~|17.56<br>~~ee~~|23.59<br>~~ee~~|
|**A**<br>~~ee~~<br>~~ee~~|1.74<br>~~ee~~<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|3.50<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~|6.38<br>~~ee~~<br>~~ee~~|8.98<br>~~ee~~<br>~~ee~~|12.19<br>~~ee~~<br>~~ee~~|
|**R**<br>~~ee~~|1.16<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~Gs Sn~~|2.33<br>~~ee~~<br>~~ee~~<br>~~Sn~~|4.29<br>~~ee~~|6.04<br>~~ee~~|8.34<br>~~ee~~|
|**B**<br>~~ee~~|0.81<br>~~es ~~<br>~~ee~~<br>~~Gs Sn~~<br>~~es~~|1.82<br> ~~ee~~<br>~~ee~~<br>~~Sn~~<br>~~es~~|3.22<br>~~ee~~<br>~~ee~~|4.52<br>~~ee~~<br>~~es~~|6.33<br>~~ee~~|
|**T or "‐": default**<br>~~ee~~<br>~~ee~~|0.46<br>~~ee~~<br>~~Gs Sn~~<br>~~ee~~<br>~~es~~|1.00<br>~~ee~~<br>~~Sn~~<br>~~ee~~<br>~~es~~|1.86<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.60<br>~~ee~~<br>~~ee~~<br>~~es~~|3.84<br>~~ee~~<br>~~ee~~|
|**E**<br>~~ee~~<br>~~ee~~|0.33<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|0.87<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1.64<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.30<br>~~ee~~<br>~~es~~<br>~~ee~~|3.35<br>~~ee~~<br>~~ee~~|
|**U**<br>~~ee~~<br>~~ee~~|0.28<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es es~~|0.79<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|1.46<br>~~ee~~<br>~~ee~~<br>~~ns~~|2.05<br>~~ee~~<br>~~ee~~|2.93<br>~~ee~~<br>~~ee~~|
|**F**<br>~~ee~~|0.25<br>~~es ~~<br>~~ee~~<br>~~es es~~|0.72<br> ~~ee~~<br>~~ee~~<br>~~es~~|1.31<br>~~ee~~<br>~~ns~~|1.83<br>~~ee~~|2.61<br>~~ee~~|



**Table 5. Vdd = 3.3V Rise/Fall Times for Specific CLOAD** 

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## **Instant Samples with Time Machine and Field Programmable Oscillators** 

SiTime supports a field programmable version of the SiT8008 low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT8008 package sizes and can be configured to one’s exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. 

For more information regarding SiTime’s field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. 

SiT8008 is typically factory-programmed per customer ordering codes for volume delivery. 

## **Customizable Features of the SiT8008 FP Devices Include** 

- Any frequency between 1 – 110 MHz 

- Three frequency stability options, ±20 PPM, ±25 PPM, ±50 PPM 

- Two operating temperatures, -20 to 70°C or -40 to 85°C 

- Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V and 2.25 to 3.65V continuous 

- Output drive strength 

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## **Dimensions and Patterns** 

**==> picture [549 x 613] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Size – Dimensions (Unit: mm) [[7]] Recommended Land Pattern (Unit: mm) [[8]]<br>2.0 x 1.6 x 0.75 mm<br>2.0±0.05 0.65<br>P #4 #3 #3 #4 1.5<br>a l in<br>YXXXX<br>#1 #2 #2 #1<br>a) ol 0.68 a<br>L 0.9<br>[ / Y Z ].<br>2.5 x 2.0 x 0.75 mm<br>1 .9<br>2 .2<br>2.5  ± 0.05<br>1. 00<br>#4 #3 #3 #4<br>fr t S<br>YXXXX<br>#1 #2 #2 #1<br>l_ e 0.75 s . | 77, 7<br>1 1.1.4<br>[| I |<br>3.2 x 2.5 x 0.75 mm<br>3.2  ± 0.05 2.1 2 .2<br>#4 #3 #3 #4<br>-_ a , o n<br>1<br>YXXXX<br>#1 #2 #2 #1<br>0.9<br>oo ‘D7<br>1 .4<br>Co —<br>5.0 x 3.2 x 0.75 mm<br>2 .54<br>5.0 ±  0.05 2. 39<br>#4 #3 #3 #4<br>-- — a<br>YXXXX<br>je #1 #2 #2 . #1 |<br>: 1.15 ) ‘Oe :<br>1 .5<br>Notes:<br>7. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.<br>8. A capacitor value of 0.1 µF between Vdd and GND is recommended.<br>0.93 0.48<br>1.6±0.05<br>1.2<br>0.8<br>0.75±0.05<br>0.05 1<br>1. 59<br>2.0 ±  0.5 1.<br>0<br>1.1.2<br>0.75 ± 0.05<br>0.05<br>0.9<br>9<br>2.5 ±  0.7 1.<br>2<br>0.75 ± 0.05 1.<br>0.8<br>0.05<br>2<br>3.2 ±  1.1 2.<br>0.75 ± 0.05 1.6<br>**----- End of picture text -----**<br>


## **Notes:** 

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## **Dimensions and Patterns** 

**==> picture [440 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Size – Dimensions (Unit: mm) [[9]] Recommended Land Pattern (Unit: mm) [[10]]<br>7.0 x 5.0 x 0.90 mm<br>7.0 ±  0.05 5. 08<br>5. 08<br>YXXXX<br>4fy<br>fi # 2 () (_ ) Y wy Ga<br>1.4<br>7 #2 Ph +7 7/1...<br>2 .2<br>= k 4<br>0.05<br>2.6<br>1<br>5.0 ±<br>3.8<br>1.1<br>0<br>2.<br>0.90 ± 0.10<br>**----- End of picture text -----**<br>


## **Notes:** 

9.Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 10.A capacitor value of 0.1 µF between Vdd and GND is recommended. 

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## **Ordering Information** 

**==> picture [326 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiT8008AC -12-18E -25.000625T<br>Part Family Packing Method<br>“SiT8008” “T”:  12/16 mm Tape & Reel, 3ku reel<br>“Y”:  12/16 mm Tape & Reel, 1ku reel<br>“D”:  8 mm Tape & Reel, 3ku reel<br>Revision Letter “E”:  8 mm Tape & Reel, 1ku reel<br>“A” is the revision  Blank for Bulk<br>Frequency<br>Temperature Range<br>1.000000 to 110.000000 MHz<br>“C” Commercial, -20ºC to 70ºC<br>“I”   Industrial, -40ºC to 85ºC<br>Feature Pin<br>“E” for Output Enable<br>Output Drive Strength “S” for Standby<br>“–” Default (datasheet limits)<br>See Tables 1 to 5 for rise/fall  Supply Voltage<br>times “18” for 1.8V ±10%<br>“L” “T” “25” for 2.5V ±10%<br>“A” “E” “28” for 2.8V ±10%<br>“R” “U” “30” for 3.0V ±10%<br>“B” “F” “33” for 3.3V ±10%<br>“XX” for 2.25V to 3.63V<br>Package Size<br>Frequency Stability<br>“7”   2.0 x 1.6 mm<br>“1” for ±20 PPM<br>“1”   2.5 x 2.0 mm<br>“2” for ±25 PPM<br>“2”   3.2 x 2.5 mm<br>“3” for ±50 PPM<br>“3”   5.0 x 3.2 mm<br>“8”   7.0 x 5.0 mm<br>**----- End of picture text -----**<br>


**Ordering Codes for Supported Tape & Reel Packing Method[[11]]** 

|**Device Size**<br>~~=SSSS>=~~|**8 mm T&R (3ku)**<br>~~=SSSS>=~~|**8 mm T&R (1ku)**<br>~~=SSSS>=~~|**12 mm T&R (3ku)**<br>~~=SSSS>=~~|**12 mm T&R (1ku)**<br>~~=SSSS>=~~|**16 mm T&R (3ku)**<br>~~=SSSS>=~~|**16 mm T&R (1ku)**<br>~~=SSSS>=~~|
|---|---|---|---|---|---|---|
|2.0 x 1.6 mm<br>~~=SSSS>=~~|D<br>~~=SSSS>=~~|E<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|
|2.5 x 2.0 mm<br>~~=SSSS>=~~|D<br>~~=SSSS>=~~|E<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|
|3.2 x 2.5 mm<br>~~=SSSS>=~~|D<br>~~=SSSS>=~~|E<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|
|5.0 x 3.2 mm<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|T<br>~~=SSSS>=~~|Y<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|
|7.0 x 5.0 mm<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|–<br>~~=SSSS>=~~|T<br>~~=SSSS>=~~|Y<br>~~=SSSS>=~~|



**Page 10 of 11** 

**Rev. 1.11** 

**www.sitime.com** 

**SiT8008 Low Power Programmable Oscillator** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Additional Information** 

|**Document**|**Description**|**Download Link**|
|---|---|---|
|**Time Machine II**|MEMS oscillator programmer|http://www.sitime.com/support/time-machine-oscillator-programmer|
|**Field Programmable**<br>**Oscillators**|Devices that can be programmable in the field by<br>Time Machine II|http://www.sitime.com/products/field-programmable-oscillators|
|**Manufacturing Notes**|Tape & Reel dimension, reflow profile and other<br>manufacturing related info|http://www.sitime.com/component/docman/doc_download/85-manu<br>facturing-notes-for-sitime-oscillators|
|**Qualification Reports**|RoHS report, reliability reports, composition reports|http://www.sitime.com/support/quality-and-reliability|
|**Performance Reports**|Additional performance data such as phase noise, current<br>consumption and jitter for selected frequencies|http://www.sitime.com/support/performance-measurement-report|
|**Termination Techniques**|Termination design recommendations|http://www.sitime.com/support/application-notes|
|**Layout Techniques**|Layout recommendations|http://www.sitime.com/support/application-notes|



© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 

**Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. 

## CRITICAL USE EXCLUSION POLICY 

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. 

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. 

**Page 11 of 11** 

**Rev. 1.11** 

**www.sitime.com** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Supplemental Information** 

The Supplemental Information section is not part of the datasheet and is for informational purposes only. 

**SiTime Corporation** 

**Sunnyvale, CA 94085** 

**(408) 328-4400** 

**990 Almanor Avenue** 

**www.sitime.com** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Silicon MEMS Outperforms Quartz** 

**SiTime Corporation 990 Almanor Avenue Silicon MEMS Outperforms Quartz Rev. 1.0** 

**Sunnyvale, CA 94085** 

**(408) 328-4400** 

**www.sitime.com Revised January 16, 2013** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Silicon MEMS Outperforms Quartz** 

## **Best Reliability** 

Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced Epi-Seal™ process, which eliminates foreign particles and improves long term aging and reliability 

## **Best Electro Magnetic Susceptibility (EMS)** 

SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. 

## **Why is SiTime Best in Class:** 

   - Internal differential architecture for best common mode noise rejection 

   - Electrostatically driven MEMS resonator is more immune to EMS 

- World-class MEMS and CMOS design expertise 

**==> picture [223 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
Mean Time Between Failure (Million Hours)<br>SiTime 500<br>IDT (Fox)  38<br>SiTime<br>20X Better<br>Epson 28<br>TXC 16<br>Pericom 14<br>0 200 400 600<br>**----- End of picture text -----**<br>


**Figure 1. Reliability Comparison[[1]]** 

**==> picture [214 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiTime vs Quartz<br>Electro Magnetic Susceptibility (EMS)<br>- 30<br>- 39 - 40<br>- 40 - 42 - 43 - 45<br>- 50<br>- 60 SiTime<br>54X Better<br>- 70 - 73<br>- 80<br>- 90<br>Kyocera Epson TXC CW SiLabs SiTime<br>Average Spurs  (dB)<br>**----- End of picture text -----**<br>


**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]** 

## **Best Aging** 

Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. 

## **Best Power Supply Noise Rejection** 

SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. 

## **Why is SiTime Best in Class:** 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced Epi-Seal™ process, which eliminates foreign particles and improves long term aging and reliability 

   - On-chip regulators and internal differential architecture for common mode noise rejection 

   - Best analog CMOS design expertise 

- Inherently better immunity of electrostatically driven MEMS resonator 

**==> picture [191 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiTime MEMS vs. Quartz Aging<br>SiTime MEMS Oscillator Quartz Oscillator<br>10<br>8.0<br>8<br>SiTime<br>6 2X Better<br>4 3.5<br>3.0<br>2 1.5<br>0<br>1-Year 10-Year<br>Aging (±PPM)<br>**----- End of picture text -----**<br>


**Figure 2. Aging Comparison[[2]]** 

**==> picture [220 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
Power Supply Noise Rejection<br>SiTIme NDK Epson Kyocera<br>5.0<br>4.0<br>3.0<br>2.0<br>SiTimeSiTime<br>1.0 3X Better<br>0.0<br>10 100 1,000 10,000<br>Power Supply Noise Frequency (kHz)<br>Injected Noise (ps/mv)<br>Additive Integrated Phase Jitter per mVp-p<br>**----- End of picture text -----**<br>


**Figure 4. Power Supply Noise Rejection[[4]]** 

**Silicon MEMS Outperforms Quartz Rev. 1.0** 

**www.sitime.com** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Silicon MEMS Outperforms Quartz** 

## **Best Vibration Robustness** 

High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

## **Best Shock Robustness** 

SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

**==> picture [473 x 413] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vibration Sensitivity vs. Frequency 16 Differential XO Shock Robustness - 500  g<br>SiTime TXC Epson Connor Winfield Kyocera SiLabs<br>14.3<br>100.00 14<br>12.6<br>12<br>10.00 10<br>8<br>SiTime<br>6<br>1.00 SiTime 3.9 Up to 25x Better<br>Up to 30x  4<br>Better  2.9 2.5<br>2<br>0.6<br>0.10<br>=S 0 -_<br>10 100 1000<br>Vibration Frequency (Hz) Kyocera Epson TXC CW SiLabs SiTime<br>Figure 5. Vibration Robustness [[5]] Figure 6. Shock Robustness [[6]]<br>Data Source: Reliability documents of named companies.<br>Data source: SiTime and quartz oscillator devices datasheets.<br>Test conditions for Electro Magnetic Susceptibility (EMS):<br>• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)<br>• Field strength: 3V/m<br>• Radiated signal modulation: AM 1 kHz at 80% depth<br>• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps<br>• Antenna polarization: Vertical<br>• DUT position: Center aligned to antenna<br>Devices used in this test:<br>SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz<br>Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz<br>TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz<br>Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz<br>Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz<br>SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz<br>50 mV pk-pk Sinusoidal voltage.<br>Devices used in this test:<br>SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz<br>NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz<br>Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz<br>Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz<br>Vibration Sensitivity (ppb/g)<br>Peak Frequency Deviation (PPM)<br>**----- End of picture text -----**<br>


## **Notes:** 

1. Data Source: Reliability documents of named companies. 

2. Data source: SiTime and quartz oscillator devices datasheets. 

3. Test conditions for Electro Magnetic Susceptibility (EMS): 

4. 50 mV pk-pk Sinusoidal voltage. 

5. **Devices used in this test:** same as EMS test stated in Note 3. 

6. Test conditions for shock test: 

- MIL-STD-883F Method 2002 

- Condition A: half sine wave shock pulse, 500-g, 1ms 

- Continuous frequency measurement in 100 μs gate time for 10 seconds 

- **Devices used in this test:** same as EMS test stated in Note 3 

7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. 

**Silicon MEMS Outperforms Quartz Rev. 1.0** 

**www.sitime.com** 

## **Document Feedback Form** 

 The Smart Timing Choice  The Smart Timing Choice 

SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com 

1. Does the Electrical Characteristics table provide complete information? Yes If No, what parameters are missing? 

No 

**==> picture [506 x 479] intentionally omitted <==**

**----- Start of picture text -----**<br>
_________________________________________________________________________________________________<br>2. Is the organization of this document easy to follow? Yes No<br>If “No,” please suggest improvements that we can make:<br>_________________________________________________________________________________________________<br>3. Is there any application specific information that you would like to see in this document? (Check all that apply)<br>EMI  Termination recommendations  Shock and vibration performance  Other<br>If “Other,” please specify:<br>_________________________________________________________________________________________________<br>4. Are there any errors in this document?  Yes No<br>If “Yes”, please specify (what and where):<br>_________________________________________________________________________________________________<br>5. Do you have additional recommendations for this document?<br>_________________________________________________________________________________________________<br>Name ________________________________________________________________________________<br>Title ________________________________________________________________________________<br>Company _________________________________________________________________________________________<br>Address _________________________________________________________________________________________<br>City / State or Province / Postal Code / Country ___________________________________________________________<br>Telephone __________________________________<br>Application ________________________________________________________________________________________<br>Would you like a reply? Yes No<br>Thank you for your feedback. Please click the email icon in your Adobe Reader tool bar and send to productsupport@sitime.com.<br>Or you may use our online feedback form.<br>**----- End of picture text -----**<br>


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## Links

- [View this product on Novapart](https://novapart.co/products/SIT8008AI-72-33E-24.000000G/mems-oscillator-24-mhz-smd-2mm-x-16mm-25-ppm-33-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/sitime/sit8008ai-72-33e-24-000000g/mems-osc-24mhz-2x1-6mm-lvcmos/dp/2850152)
---

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