# VCTCXO, 25 MHz, 5 ppm, LVCMOS, 3.3 V, SMD, 2.5mm x 2mm, SiT5000

![Product image](https://novapart.co/image/farnell:2850171/)

**URL**: https://novapart.co/products/SIT5000AICGE-33E0-25.000000X/vctcxo-25-mhz-5-ppm-lvcmos-33-v-smd-25mm-x-2mm
**SKU**: SIT5000AICGE-33E0-25.000000X
**Manufacturer**: SITIME
**Category**: Crystals & Oscillators || Oscillators || Voltage Controlled - VC-TCXO Oscillators
**Price**: €1.9700
**Stock**: 100+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Frequency Nom | 25MHz |
| Product Range | SiT5000 |
| Oscillator Case | SMD, 2.5mm x 2mm |
| Supply Voltage Nom | 3.3V |
| Frequency Stability + / - | 5ppm |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -40°C |
| Oscillator Output Compatibility | LVCMOS |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2850171/)

> **Standard Frequency MEMS (VC)TCXOSiT5000** KTiime  ~~ee~~ The Smart Timing Choice  

 The Smart Timing Choice  The Smart Timing Choice 

## **Features** 

- 27 standard frequencies between 10 MHz and 40 MHz 

- 100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO 

## **Applications** 

   - WiFi, 3G, LTE, SDI, Ethernet, SONET, DSL 

   - Telecom, networking, smart meter, wireless, test instrumentation 

- Frequency stability as low as ±5 ppm. Contact SiTime for tighter stability options 

- Low phase jitter: 0.5 ps (12 kHz to 20 MHz) 

- LVCMOS compatible output with SoftEdge™ option for EMI reduction 

- Voltage control, standby, output enable or no connect modes 

- Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm 

- Outstanding silicon reliability of 2 FIT, 10 times better than quartz 

- Pb-free, RoHs and REACH compliant 

## **Electrical Characteristics** 

|**Parameter**<br>~~PO~~<br>~~——is~~|**Symbol**<br>~~——is~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|**Condition**|
|---|---|---|---|---|---|---|
|**Output Frequency Range**<br>~~PO~~<br>~~——is~~<br>~~PO~~<br>~~—S~~|f<br>~~——is~~<br>~~—S~~|Refer to the frequency list (_page 6_)<br>~~ee~~|||MHz<br>~~ee~~|27 standard frequencies between 10 MHz and 40 MHz|
|**Initial Tolerance**<br>~~PO~~<br>~~——is~~<br>~~PO~~<br>~~—S~~|F_init<br>~~——is~~<br>~~—S~~|-1.5<br>~~ee~~|–<br>~~ee~~|+1.5<br>~~ee~~|ppm<br>~~ee~~|At 25°C after two reflows|
|**Stability Over Temperature**<br>~~PO~~<br>~~—S~~<br>~~Po~~<br>~~rrrrr——E~~|F_stab<br>~~—S~~<br>~~rrrrr——E~~|-5|–|+5|ppm|Over operating temperature range at rated nominal power<br>supply voltage and load. (_see ordering codes on page 6_)<br>**Contact SiTime for tighter stability options.**|
|**Supply Voltage**<br>~~Po~~<br>~~rrrrr——E~~<br>~~Po~~<br>~~rrr——SE~~|F_vdd<br>~~rrrrr——E~~<br>~~rrr——SE~~|–|50|–|ppb|±10% Vdd (±5% for Vdd = 1.8V)|
|**Output Load**<br>~~Po~~<br>~~rrrrr——E~~<br>~~Po~~<br>~~rrr——SE~~<br>~~Se~~|F_load<br>~~rrrrr——E~~<br>~~rrr——SE~~|–|0.1|–|ppm|15 pF ±10% of load|
|**First year Aging**<br>~~Po~~<br>~~rrr——SE~~<br>~~Se~~<br>~~ee~~|F_aging<br>~~rrr——SE~~<br>~~ee~~<br>~~—————————E~~|-2.5<br>~~ee~~|–<br>~~ee~~|+2.5<br>~~es~~|ppm<br>~~Gs~~|25°C<br>~~Ge~~|
|**10-year Aging**<br>~~Se~~<br>~~ee~~<br>~~—————————E~~||-4.0<br>~~ee~~<br>~~—————————E~~|–<br>~~ee~~<br>~~—————————E~~|+4.0<br>~~es~~<br>~~—————————E~~|ppm<br>~~Gs~~<br>~~—————————E~~|25°C<br>~~Ge~~<br>~~—————————E~~|
|**Operating Temperature Range**<br>~~Se~~<br>~~ee~~<br>~~—————————E~~|T_use<br>~~ee~~<br>~~—————————E~~|-20<br>~~ee~~<br>~~—————————E~~<br>~~a~~|–<br>~~ee ~~<br>~~—————————E~~<br>~~ee~~|+70<br> ~~es~~<br>~~—————————E~~<br>~~es~~|°C<br>~~Gs~~<br>~~—————————E~~<br>~~es~~|Extended Commercial<br>~~Ge~~<br>~~—————————E~~<br>~~Ge~~|
|||-40<br>~~—————————E~~<br>~~a~~<br>~~ee~~|–<br>~~—————————E~~<br>~~ee~~<br>~~ee~~|+85<br>~~—————————E~~<br>~~es~~<br>~~ee~~|°C<br>~~—————————E~~<br>~~es~~<br>~~ee~~|Industrial<br>~~—————————E~~<br>~~Ge~~<br>~~ee~~|
|**Supply Voltage**<br>~~—————————E~~|Vdd<br>~~—————————E~~|1.71<br>~~—————————E~~<br>~~a~~<br>~~ee~~<br>~~ee~~|1.8<br>~~—————————E~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.89<br>~~—————————E~~<br>~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~—————————E~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Contact SiTime for any other supply voltage options.<br>~~—————————E~~<br>~~Ge~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|||2.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.75<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||2.52<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.8<br>~~ee ~~<br>~~ee~~<br>~~ee~~|3.08<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||2.70<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.0<br>~~ee ~~<br>~~ee~~<br>~~es~~|3.3<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||2.97<br>~~ee~~<br>~~ee~~|3.3<br>~~ee ~~<br>~~es~~|3.63<br> ~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~||
|**Pull Range**<br>~~SD~~<br>~~PO~~<br>~~——SS~~|PR<br>~~SD~~<br>~~——SS~~|±12.5<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~SD~~|||ppm<br>~~ee~~<br>~~QO~~|~~ee~~<br>~~QO~~|
|**Upper Control Voltage**<br>~~PO~~<br>~~——SS~~<br>~~Po~~<br>~~rrrrr——E~~|VC_U<br>~~——SS~~<br>~~rrrrr——E~~|Vdd-0.1|–|–|V|All Vdds. Voltage at which maximum deviation is guaranteed.|
|**Control Voltage Range**<br>~~PO~~<br>~~——SS~~<br>~~Po~~<br>~~rrrrr——E~~<br>~~Po~~<br>~~rrrrr——SEN~~|VC_L<br>~~——SS~~<br>~~rrrrr——E~~<br>~~rrrrr——SEN~~|–|–|0.1|V||
|**Control Voltage Input Impedance**<br>~~Po~~<br>~~rrrrr——E~~<br>~~Po~~<br>~~rrrrr——SEN~~<br>~~DPO——i—is~~|Z_vc<br>~~rrrrr——E~~<br>~~rrrrr——SEN~~<br>~~O——i—is~~|100<br>~~ee~~|–<br>~~ee~~|–<br>~~ee~~|k<br>~~ee~~||
|**Frequency Change Polarity**<br>~~Po~~<br>~~rrrrr——SEN~~<br>~~DPO——i—is~~<br>~~ry~~|–<br>~~rrrrr——SEN~~<br>~~O——i—is~~<br>~~rs Gr~~|Positive slope<br>~~ee~~<br>~~GrnD nD~~|||–<br>~~ee~~<br>~~nD~~|~~QO~~|
|**Control Voltage -3dB Bandwidth**<br>~~DPO——i—is~~<br>~~ry~~|V_BW<br>~~O——i—is~~<br>~~rs Gr~~|–<br>~~ee~~<br>~~Gr~~|–<br>~~ee~~<br>~~nD nD~~|8<br>~~ee~~<br>~~nD~~|kHz<br>~~ee~~<br>~~nD~~|~~QO~~|
|**Current Consumption**<br>~~ry ~~<br>~~a~~<br>~~eee~~|Idd<br> ~~rs Gr~~<br>~~eee~~|–<br>~~Gr ~~<br>~~a~~|31<br> ~~nD nD~~<br>~~ee~~|33<br>~~nD~~<br>~~es~~|mA<br>~~nD~~<br>~~es~~|No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V.<br>~~QO~~<br>~~Ge~~|
|||–<br>~~a~~<br>~~eee~~|29<br>~~ee~~<br>~~eee~~|31<br>~~es~~<br>~~eee~~|mA<br>~~es~~<br>~~eee~~|No load condition, f = 20 MHz, Vdd = 1.8V.<br>~~Ge~~<br>~~eee~~|
|**OE Disable Current**<br>~~a~~<br>~~eee~~<br>~~ee~~|I_OD<br>~~eee~~<br>~~ee~~|–<br>~~a~~<br>~~eee~~|–<br>~~ee ~~<br>~~eee~~|31<br> ~~es ~~<br>~~eee~~|mA<br> ~~es~~<br>~~eee~~|Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled<br>Down<br>~~Ge~~<br>~~eee~~|
|||–<br>~~eee~~<br>~~ee~~|–<br>~~eee~~<br>~~ee~~|30<br>~~eee~~<br>~~ee~~|mA<br>~~eee~~<br>~~ee~~|Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down<br>~~eee~~<br>~~ee~~|
|**Standby Current**<br>~~eee~~<br>~~ee~~<br>~~Pore~~|I_std<br>~~eee~~<br>~~ee~~|–<br>~~eee~~<br>~~ee~~<br>~~a~~|–<br>~~eee~~<br>~~ee~~<br>~~ee~~|70<br>~~eee~~<br>~~ee~~<br>~~es~~|µA<br>~~eee~~<br>~~ee~~<br>~~ees~~|Vdd = 2.5V, 2.8V or 3.3V, ST<br>= GND, output is Weakly Pulled Down.<br>~~eee~~<br>~~ee~~<br>~~Ge~~|
|||–<br>~~ee~~<br>~~a~~|–<br>~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~es~~|µA<br>~~ee~~<br>~~ees~~|Vdd = 1.8V. ST<br>= GND, output is Weakly Pulled Down.<br>~~ee~~<br>~~Ge~~|
|**Duty Cycle**<br>~~Pore~~<br>~~|~~<br>~~sss~~|DC<br>~~sss~~|45<br>~~a~~<br>~~Re~~|–<br>~~ee~~<br>~~es es~~|55<br>~~es~~<br>~~es nd~~|%<br>~~ees~~<br>~~nd~~|All Vdds<br>~~Ge~~|
|**LVCMOS Rise/Fall Time**<br>~~Pore~~<br>~~|~~<br>~~sss~~<br>~~Po~~<br>~~77~~|Tr, Tf<br>~~sss~~<br><br>~~77~~<br>|–<br>~~a~~<br>~~Re~~<br>~~e~~<br>~~77~~|1.5<br>~~ee~~<br>~~es es~~<br>~~e~~<br>~~77~~|2<br>~~es ~~<br>~~es nd~~<br>~~e~~|ns<br> ~~ees~~<br>~~nd~~<br>~~e~~<br>~~ee~~|LVCMOS option. Default rise/fall time, All Vdds, 10% - 90% Vdd.<br>~~Ge~~<br>~~es~~|
|**SoftEdge™ Rise/Fall Time**<br>~~|~~<br>~~sss~~<br>~~Po~~<br>~~77~~<br>~~Po~~||SoftEdge™ Rise/Fall Time Table<br>~~Re es es nd~~<br>~~e~~<br>~~77~~|||ns<br>~~nd~~<br>~~e~~<br>~~ee~~<br>~~s—“‘iSYT~~|SoftEdge™ option. Frequency and supply voltage dependent.<br>~~es~~<br>~~s—“‘iSYT~~|
|**Output Voltage High**<br>~~Po ~~<br>~~77~~<br>~~Po~~|VOH<br> <br>~~77~~<br>|90%<br> ~~e~~<br>~~77~~|–<br>~~e~~<br>~~77~~|–<br>~~e~~|Vdd<br>~~e~~<br>~~ee~~<br>~~s—“‘iSYT~~|OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V)<br>IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V)<br>IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V)<br>~~es~~<br>~~s—“‘iSYT~~|
|**Output Voltage Low**<br>~~Po~~~~**rrrr——SE**~~<br>~~Po~~|VOL<br>~~**rrrr——SE**~~|–|–|10%|Vdd<br>~~s—“‘iSYT~~||
|**Input Voltage High**<br>~~Po~~~~**rrrr——SE**~~<br>~~Po~~|VIH<br>~~**rrrr——SE**~~|70%|–|–|Vdd<br>~~s—“‘iSYT~~|Pin 1, OE or ST<br>~~s—“‘iSYT~~|
|**Input Voltage Low**<br>~~Po ~~~~**rrrr——SE**~~<br>~~PoPoi~~|VIL<br>~~**rrrr——SE**~~|–|–|30%|Vdd<br>~~s—“‘iSYT~~|Pin 1, OE or ST<br>~~s—“‘iSYT~~|
|**Input Pull-up Impedance**<br> ~~**rrrr——SE**~~<br>~~PoPoi~~|Z_in<br>~~**rrrr——SE**~~|–|100|250|k||



**SiTime Corporation** 

**Sunnyvale, CA 94085** 

**(408) 328-4400** 

**990 Almanor Avenue** 

**www.sitime.com** 

**Rev. 1.0** 

**Revised November 12, 2015** 

**SiT5000 Standard Frequency MEMS (VC)TCXO** 

 ~~_itime~~ The Smart Timing Choice  

 The Smart Timing Choice  The Smart Timing Choice 

## **Electrical Characteristics (continued)** 

|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|**Startup Time**|T_start|–|–|10|ms|Measured from the time Vdd reaches its rated minimum value|
|**OE Enable/Disable Time**|T_oe|–|–|150|ns|f = 80 MHz. For other frequencies, T_oe = 100 ns + 3 cycles|
|**Resume Time**|T_resume|–|6|10|ms|Measured from the time ST pin crosses 50% threshold|
|**RMS Period Jitter**|T_jitt|–|1.7|2|ps|f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V|
|||–|1.7|2|ps|f = 10 MHz, Vdd = 1.8V|
|**RMS Phase Jitter (random)**|T_phj|–|0.5|1|ps|f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds|



**Note:** 

1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options. 

**Pin Configuration** 

**==> picture [474 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin Symbol Functionality<br>V control Voltage control Top View<br>Output  H or Open [[2]] : specified frequency output<br>Enable L: output is high impedance. Only output driver is disabled.<br>1 VC/OE/ST/NC H or Open [[2]] : specified frequency output VC/OE/ST 1 4 VDD<br>Standby L: output is low (weak pull down). Device goes to sleep mode. Supply<br>current reduces to I_std.<br>NC No connect (input receiver off)<br>2 GND Power Electrical and case ground GND 2 3 OUT<br>3 CLK Output Oscillator output<br>4 VDD Power Power supply voltage<br>LE<br>Note:<br>2. A pull-up resistor of <10 k ?  between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode.<br>**----- End of picture text -----**<br>


## **Absolute Maximum** 

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. **Parameter Min. Max. Unit Storage Temperature** -65 150 °C **VDD** -0.5 4 V **Electrostatic Discharge** – 2000 V **Soldering Temperature (follow standard Pb free soldering guidelines)** – 260 °C ~~——<—ss —~~ **Thermal Consideration**  **JA, 4 Layer Board**  **JA, 2 Layer Board**  **JC, Bottom Package (°C/W) (°C/W) (°C/W) 7050** 191 263 27 **5032** 97 199 24 **3225** 109 212 27 **2520** 117 222 26 ~~———~~ **Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C** ~~—__~~ 

**Condition/Test Method** 

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**SiT5000 Standard Frequency MEMS (VC)TCXO** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Timing Diagram** 

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90% Vdd, 2.5/2,8/3.3V devices Vdd<br>95% Vdd, 1.8V devices Vdd Pin 4 Voltage  ST Voltage<br>50% Vdd<br>T_resume<br>T_start<br>CLK Output<br>ae CLK Output =.<br>Ft<br>T_start: Time to start from power-off  T_resume: Time to resume from ST<br>(ST/OE Mode) (ST Mode Only)<br>Phase Noise, 10MHz carrier, 3.3V, LVCMOS output, TCXO<br>-100<br>-110<br>Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps<br>-120<br>-130<br>-140<br>-150<br>-160<br>-170<br>103 104 105 106<br>Frequency Offset (Hz)<br>Phase Noise (dBc/Hz)<br>**----- End of picture text -----**<br>


## **Phase Noise Plot** 

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**SiT5000 Standard Frequency MEMS (VC)TCXO** 

 The Smart Timing Choice  The Smart Timing Choice 

## **SoftEdge™ Option** 

The SoftEdge™ output is available as a standard option for the SiT500x family of MEMS (VC)TCXOs. It is typically used for EMI reduction similar to that of the clipped sinewave output common to many quartz based TCXOs. 

In the SoftEdge™ mode, the slower rise/fall edges of the output waveform reduce the higher clock harmonics in a digital clock signal, minimizing EMI radiation at these harmonics. The table below show the actual rise/fall time in relation to the desired output frequency and the supply voltage with a 10 k / 10 pF load. Rail-to-rail swing of the output is maintained for these supported frequencies. 

## **Rise/Fall Time for SoftEdge™ Option** 

|**Parameter**<br>**Symbol**|**Symbol**<br>**Min.**<br>**Typ.**<br>**Max.**|**Unit**|**Condition**|
|---|---|---|---|
|**Rise/Fall Time**<br>Tr, Tf|Tr, Tf<br>4.0<br>6.5<br>9.5|ns|1-26 MHz, 1.8V, 3.0 and 3.3V, MHz 10k and 10 pF, 20%-80% Vd|
||2.5<br>4.0<br>6.0|ns|1-26 MHz, 2.5V and 2.8V, MHz 10k and 10 pF, 20%-80% Vdd|
||1.5<br>3.5<br>5.0|ns|26-40 MHz, 1.8V, 3.0V and 3.3V, MHz 10k and 10 pF, 20%-80% Vdd|
||1.5<br>2.5<br>4.5|ns|26-40 MHz, 2.5V and 2.8V, MHz 10k and 10 pF, 20%-80% Vdd|



## **SoftEdge™ Waveform Examples and Corresponding Harmonics Reduction** 

Figures below illustrate the harmonic power reduction as the rise/fall times are slowed from the standard squarewave output to that of the SoftEdge™ output. In general, the 1.8V device shows the lowest harmonics and provides best EMI performance comparing to devices with higher operating voltages. 

**==> picture [520 x 413] intentionally omitted <==**

**----- Start of picture text -----**<br>
LVCMOS and SoftEdge ™  Outputs,  Odd Harmonic Power Comparison for LVCMOS and SoftEdge™ Outputs,<br>3.5 VDD = 3.3V 20 VDD = 3.3V<br>SoftEdge<br>3 i = LVCMOS 10 . LVCMOSSoftEdge<br>2.5 ; | I I Tn -10dBm<br>0 tee.<br>1.52 i1 \\\f !' | !!} pod 1 I \ \i ul| | -10-20 : eh,Tt ey -24.4dbm<br>1 | : f y }<br>-30<br>0.5<br>0 [ows 0 10 20 30 fet 40 si 50 60 70 wee 80 90 100 110 a 120 130 140 150 -40 0 2 4 6 8 10 12 14 16 18 20<br>Time (ns) Harmonic Number<br>LVCMOS and SoftEdge Outputs, VDD = 2.5V 20 Odd Harmonic Power Comparison for LVCMOS and SoftEdge Outputs, VDD = 2.5V<br>SoftEdge SoftEdge<br>| LVCMOS 10 » : : : : foe LVCMOS<br>! ne 1 aan i we ! aes 0 N<br>1 ay aT I XN -11 dBm :<br>1 1 | ! : NU: : ; ‘ : :<br>I \ t \I pent '\ ‘ \ -10 : \ : : 5<br>I | | ! -20 es : :<br>| | : : “He: -20 dBm<br>: : : ee<br>; : : -30 : : : i)<br>-40<br>wry x yn nay Keay 0 2 4 6 8 10 12 14 16 18 20<br>Time (20 ns/Div) Harmonic Number<br>LVCMOS and SoftEdge Outputs,  Odd Harmonic Power Comparison for LVCMOS and SoftEdge Outputs,<br>VDD = 1.8V 20 VDD = 1.8V<br>SoftEdgeLVCMOS SoftEdgeLVCMOS<br>10<br>| ! fi H 1 | had I \: b b : £ b ‘ c 5b<br>\ \ i | H | \ EN 5 : 5 : 5 : :<br>\| | ii i' a' || 4| Ll' 0 \ vo KE: : : : : : :<br>| I I ! I q : : DN : : : : :<br>i| ]| ]| || -10 :: : -17 dBm :: sw me: ge: :: :i<br>{ | | i : \ : : : : Pe<br>-20<br>-22<br>dBm<br>-30<br>-40 0 2 4 6 8 10 12 14 16 18 20<br>tae Hat's: ast ese Harmonic Number<br>Time ( 20ns/Div )<br>Amplitude (V)<br>Harmonic Power (dbm)<br>Amplitude( 0.5V/Div) Harmonic Power (dbm)<br>Harmonic Power (dbm)<br>Amplitude ( 0.5V/Div )<br>**----- End of picture text -----**<br>


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**SiT5000 Standard Frequency MEMS (VC)TCXO** 

 The Smart Timing Choice  The Smart Timing Choice 

 ~~iss~~ The Smart Timing Choice  

## **Dimensions and Patterns** 

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Package Size – Dimensions (Unit: mm) [ [3]] Recommended Land Pattern (Unit: mm)  [[4]]<br>2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)<br>YXXXX<br>je |<br>3.2 x 2.5 x 0.75 mm<br>2 .2<br>3.2  ± 0.05 2.1<br>#4 #3 #3 #4<br>> t<br>YXXXX<br>#1 #2 #2 #1<br>Oo 0.9 ‘me:<br>bea |<br>1 .4<br>—— —<br>5.0 x 3.2 x 0.75 mm<br>2 .54<br>5.0 ±  0.05 2. 39<br>#4 #3 #3 #4<br>r= — a<br>YXXXX<br>ee #1 #2 #2 e #1 fa<br>1.15<br>“T t ‘6 Be :<br>1 .5<br>7.0 x 5.0 x 0.90 mm<br>5. 08<br>7.0 ±  0.05 5. 08<br>YXXXX<br>| os<br>1.4<br>2 .2<br>Fi g it I, 17/7 H i<br>3. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.<br>4. A capacitor of value 0.1 F between Vdd and GND is recommended.<br>0.05<br>0.9 9<br>1.<br>2.5 ±<br>0.7<br>2<br>1.<br>0.75 ± 0.05<br>0.8<br>0.05<br>2<br>2.<br>3.2 ±  1.1<br>0.75 ± 0.05 1.6<br>0.05 2.6 1<br>5.0 ±  3.8<br>1.1 0<br>2.<br>0.90 ± 0.10<br>**----- End of picture text -----**<br>


## **Notes:** 

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**Rev. 1.0** 

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SiT5000<br>Standard Frequency MEMS (VC)TCXO<br><br>The Smart Timing Choice <br>The Smart Timing Choice<br>Ordering Information<br>The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number<br>Generator.<br>SiT5000AC -2E-18VQ-19.200000T<br>Packaging<br>Part Family “T”: Tape & Reel, 3K reel<br>SiT5000 “Y”: Tape & Reel, 1K reel<br>Blank for Bulk<br>Revision Letter<br>“A” is the revision Frequency<br>See supported frequency list<br>Temperature Range<br>“0” for fixed frequency<br>“C” Commercial, -20 to 70ºC (Pin1 = “E”, “S” or “N” options)<br>“I”   Industrial, -40 to 85ºC<br>Pull Range Options<br>(Pin1 = “V” option only)<br>Output Waveform “Q” for ±12.5 ppm<br>“-“ Default<br>“C” SoftEdge™ Option [[5]] Feature Pin (pin 1)<br>“V” for Voltage Control<br>Package “E” for Output Enable<br>“G”   2.5 x 2.0 “S” for Standby<br>“2”   3.2 x 2.5 “N” for No Connect<br>“3”   5.0 x 3.2<br>“8”   7.0 x 5.0<br>Supply Voltage<br>“18” for 1.8 V ±5%<br>Frequency Stability [[6]] “25” for 2.5 V ±10%<br>“E” for ±5 ppm “28” for 2.8 V ±10%<br>“30” for 3.0 V ±10%<br>“33” for 3.3 V ±10%<br>aE<br>Notes:<br>5. SiTime’s SoftEdge™ output waveform with 6 ns rise/fall time reduces EMI and is similar to clipped sine wave in functionality.<br>6. Contact SiTime for tighter stability options.<br>Supported Frequencies<br>10 MHz 12 MHz 12.288 MHz 12.8 MHz 13 MHz 14 MHz 14.4 MHz 14.7456 MHz 16 MHz<br>16.357 MHz 16.3676 MHz 16.367667 MHz 16.368 MHz 16.369 MHz 16.8 MHz 19.2 MHz 19.44 MHz 19.68 MHz<br>20 MHz 20.8 MHz 24 MHz 25 MHz 26 MHz 27.456 MHz 33.6 MHz 38.4 MHz 40 MHz<br>**----- End of picture text -----**<br>


**Page 6 of 7** 

**Rev. 1.0** 

**www.sitime.com** 

**SiT5000 Standard Frequency MEMS (VC)TCXO** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Additional Information** 

|**Document**|**Description**|**Download Link**|
|---|---|---|
|**Manufacturing**<br>**Notes**|Tape & Reel dimension, reflow<br>profile and other manufacturing<br>related info|http://www.sitime.com/component/docman/doc_download/85-manufacturing-notes-for-sitime-oscillators|
|**Qualification**<br>**Reports**|RoHS report, reliability reports,<br>composition reports|http://www.sitime.com/support/quality-and-reliability|
|**Performance**<br>**Reports**|Additional performance data<br>such as phase noise, current<br>consumption and jitter for<br>selected frequencies|http://www.sitime.com/support/performance-measurement-report|
|**Termination**<br>**Techniques**|Termination design<br>recommendations|http://www.sitime.com/support/application-notes|
|**Layout Techniques**|Layout recommendations|http://www.sitime.com/support/application-notes|



## **Revision History** 

|**Version**<br>~~a~~|**Release Date**<br>~~a~~|**Change Summary**|
|---|---|---|
|1.0<br>~~a~~|11/12/15<br>~~a~~|Final production release<br>• Revised initial tolerance, stability over temperature and first/10 year aging values in the electrical<br>characteristics table<br>• Revised frequency stability option|



> © SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 

> **Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. 

## CRITICAL USE EXCLUSION POLICY 

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. 

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. 

**Page 7 of 7** 

**Rev. 1.0** 

**www.sitime.com** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Supplemental Information** 

The Supplemental Information section is not part of the datasheet and is for informational purposes only. 

**SiTime Corporation** 

**990 Almanor Avenue, Sunnyvale, CA 94085** 

**(408) 328-4400** 

**www.sitime.com** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Silicon MEMS Outperforms Quartz** 

**SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.2** 

**990 Almanor Avenue, Sunnyvale, CA 94085** 

**(408) 328-4400** 

**www.sitime.com Revised November 13, 2015** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Silicon MEMS Outperforms Quartz** 

## **Best Reliability** 

Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability 

## **Best Electro Magnetic Susceptibility (EMS)** 

SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. 

## **Why is SiTime Best in Class:** 

   - Internal differential architecture for best common mode noise rejection 

   - Electrostatically driven MEMS resonator is more immune to EMS 

- World-class MEMS and CMOS design expertise 

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Reliability (Million Hours)<br>SiTime 1,140<br>IDT 38<br>Epson 28<br>**----- End of picture text -----**<br>


**Figure 1. Reliability Comparison[[1]]** 

**==> picture [214 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiTime vs Quartz<br>Electro Magnetic Susceptibility (EMS)<br>- 30<br>- 39 - 40<br>- 40 - 42 - 43 - 45<br>- 50<br>- 60 SiTime<br>54X Better<br>- 70 - 73<br>- 80<br>- 90<br>Kyocera Epson TXC CW SiLabs SiTime<br>Average Spurs  (dB)<br>**----- End of picture text -----**<br>


**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]** 

## **Best Aging** 

Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. 

## **Best Power Supply Noise Rejection** 

SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. 

## **Why is SiTime Best in Class:** 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability 

   - On-chip regulators and internal differential architecture for common mode noise rejection 

   - Best analog CMOS design expertise 

- Inherently better immunity of electrostatically driven MEMS resonator 

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SiTime MEMS vs. Quartz Aging<br>SiTime MEMS Oscillator Quartz Oscillator<br>10<br>8.0<br>8<br>SiTime<br>6 2X Better<br>4 3.5<br>3.0<br>2 1.5<br>0<br>1-Year 10-Year<br>Aging (±PPM)<br>**----- End of picture text -----**<br>


**Figure 2. Aging Comparison[[2]]** 

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Power Supply Noise Rejection<br>SiTIme NDK Epson Kyocera<br>5.0<br>4.0<br>3.0<br>2.0<br>SiTimeSiTime<br>1.0 3X Better<br>0.0<br>10 100 1,000 10,000<br>Power Supply Noise Frequency (kHz)<br>Injected Noise (ps/mv)<br>Additive Integrated Phase Jitter per mVp-p<br>**----- End of picture text -----**<br>


**Figure 4. Power Supply Noise Rejection[[4]]** 

**Silicon MEMS Outperforms Quartz Rev. 1.2** 

**www.sitime.com** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Silicon MEMS Outperforms Quartz** 

## **Best Vibration Robustness** 

High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

## **Best Shock Robustness** 

SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

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Vibration Sensitivity vs. Frequency 16 Differential XO Shock Robustness - 500  g<br>SiTime TXC Epson Connor Winfield Kyocera SiLabs<br>14.3<br>100.00 14<br>12.6<br>12<br>10.00 10<br>8<br>SiTime<br>6<br>1.00 SiTime 3.9 Up to 25x Better<br>Up to 30x  4<br>Better  2.9 2.5<br>2<br>0.6<br>0.10<br>=S 0 -_<br>10 100 1000<br>Vibration Frequency (Hz) Kyocera Epson TXC CW SiLabs SiTime<br>Figure 5. Vibration Robustness [[5]] Figure 6. Shock Robustness [[6]]<br>Data Source: Reliability documents of named companies.<br>Data source: SiTime and quartz oscillator devices datasheets.<br>Test conditions for Electro Magnetic Susceptibility (EMS):<br>• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)<br>• Field strength: 3V/m<br>• Radiated signal modulation: AM 1 kHz at 80% depth<br>• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps<br>• Antenna polarization: Vertical<br>• DUT position: Center aligned to antenna<br>Devices used in this test:<br>SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz<br>Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz<br>TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz<br>Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz<br>Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz<br>SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz<br>50 mV pk-pk Sinusoidal voltage.<br>Devices used in this test:<br>SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz<br>NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz<br>Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz<br>Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz<br>Vibration Sensitivity (ppb/g)<br>Peak Frequency Deviation (PPM)<br>**----- End of picture text -----**<br>


## **Notes:** 

1. Data Source: Reliability documents of named companies. 

2. Data source: SiTime and quartz oscillator devices datasheets. 

3. Test conditions for Electro Magnetic Susceptibility (EMS): 

4. 50 mV pk-pk Sinusoidal voltage. 

5. **Devices used in this test:** same as EMS test stated in Note 3. 

6. Test conditions for shock test: 

- MIL-STD-883F Method 2002 

- Condition A: half sine wave shock pulse, 500-g, 1ms 

- Continuous frequency measurement in 100 μs gate time for 10 seconds 

- **Devices used in this test:** same as EMS test stated in Note 3 

7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. 

**Silicon MEMS Outperforms Quartz Rev. 1.2** 

**www.sitime.com** 

## **Document Feedback Form** 

 The Smart Timing Choice  The Smart Timing Choice 

SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. 

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1. Does the Electrical Characteristics table provide complete information?  Yes No<br>If No, what parameters are missing?<br>_________________________________________________________________________________________________<br>2. Is the organization of this document easy to follow? Yes No<br>If “No,” please suggest improvements that we can make:<br>_________________________________________________________________________________________________<br>3. Is there any application specific information that you would like to see in this document? (Check all that apply)<br>EMI  Termination recommendations  Shock and vibration performance  Other<br>If “Other,” please specify:<br>_________________________________________________________________________________________________<br>4. Are there any errors in this document?  Yes No<br>If “Yes”, please specify (what and where):<br>_________________________________________________________________________________________________<br>5. Do you have additional recommendations for this document?<br>_________________________________________________________________________________________________<br>Name ________________________________________________________________________________<br>Title ________________________________________________________________________________<br>Company _________________________________________________________________________________________<br>Address _________________________________________________________________________________________<br>City / State or Province / Postal Code / Country ___________________________________________________________<br>Telephone __________________________________<br>Application ________________________________________________________________________________________<br>Would you like a reply? Yes No<br>Thank you for your feedback. Please click the email icon in your Adobe Reader tool bar and send to productsupport@sitime.com.<br>Or you may use our online feedback form.<br>**----- End of picture text -----**<br>


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## Links

- [View this product on Novapart](https://novapart.co/products/SIT5000AICGE-33E0-25.000000X/vctcxo-25-mhz-5-ppm-lvcmos-33-v-smd-25mm-x-2mm)
- [Request a quote for this part](https://novapart.co/quote/)
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---

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