# Clock Generator, 50 MHz, 5 Pin, 1 Output, SOT-23

![Product image](https://novapart.co/image/farnell:2850163/)

**URL**: https://novapart.co/products/SIT2001BI-S2-33E-50.000000G/clock-generator-50-mhz-5-pin-1-output-sot-23
**SKU**: SIT2001BI-S2-33E-50.000000G
**Manufacturer**: SITIME
**Category**: Crystals & Oscillators || Oscillators || Standard Oscillators
**Price**: €0.8700
**Stock**: 10+
**Lead Time**: 50 days (indicative)

## Description

Clock IC Type:Clock Generator; Frequency:50MHz; No. of Outputs:1Outputs; Supply Voltage Min:2.97V; Supply Voltage Max:3.63V; Clock IC Case Style:SOT-23; No. of Pins:5Pins; Operati

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Bis(a,a-dimethylbenzyl) peroxide (27-Jun-2024) |
| Frequency | 50MHz |
| Clock Ic Type | Clock Generator |
| Frequency Nom | 50MHz |
| Product Range | - |
| No. Of Outputs | 1Outputs |
| Supply Voltage Nom | 3.3V |
| Clock Ic Case Style | SOT-23 |
| Frequency Stability + / - | 25ppm |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -40°C |
| Oscillator Case / Package | SOT-23 |
| Oscillator Output Compatibility | LVCMOS / HCMOS |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2850163/)

**SiT2001B Single-Chip, One-Output Clock Generator** 

 The Smart Timing Choice  The Smart Timing Choice 

 ~~ee~~ The Smart Timing Choice  

## **Features** 

- Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places 

- Operating temperature from -40°C to 85°C. Refer to SiT2018 for -40°C to 85°C option and SiT2020 for -55°C to 125°C option 

## **Applications** 

   - Industrial, medical, automotive, avionics and other high temperature applications 

   - Industrial sensors, PLC, motor servo, outdoor networking equipment, medical video cam, asset tracking systems, etc. 

- Excellent total frequency stability as low as ±20 ppm 

- Low power consumption of 3.5 mA typical 

- Fast startup time of 5 ms 

- LVCMOS/HCMOS compatible output 

- 5-pin SOT23-5: 2.9mm x 2.8mm 

- Pb-free, RoHS and REACH compliant 

- **For AEC-Q100 one- output clock generators, refer to SiT2024 and SiT2025** 

## **Electrical Specifications** 

## **Table 1. Electrical Characteristics** 

All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. 

|**Parameters**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|**Frequency Range**<br>~~Pee~~<br>~~Poise~~|||||||
|**Output Frequency Range**<br>~~Poise~~|f<br>~~Poise~~|1|–|110|MHz||
|**Frequency Stability and Aging**<br>~~Poise~~<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~es~~|||||||
|**Frequency Stability**|F_stab|-20<br>~~ee~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~|+20<br>~~es~~<br>~~es~~|ppm|Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and<br>variations over operating temperature, rated power supply<br>voltage and load (15 pF ± 10%).<br>~~ee~~|
|||-25<br>~~ee~~<br>~~ee~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~<br>~~ee~~|+25<br>~~es~~<br>~~es~~<br>~~ee~~|ppm<br>~~ee~~||
|||-50<br>~~ee~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~|+50<br>~~es~~<br>~~ee~~|ppm<br>~~ee~~||
|**Operating Temperature Range**<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~Pe~~<br>~~ee~~<br>~~—————————————~~|||||||
|**Operating Temperature Range**<br>**(ambient)**<br>~~Pe~~<br>~~ee~~|T_use<br>~~Pe~~<br>~~ee~~|-20<br>~~Pe~~<br>~~—————————————~~<br>~~ee~~|–<br>~~Pe~~<br>~~—————————————~~<br>~~es es ns~~|+70<br>~~Pe~~<br>~~—————————————~~<br>~~es ns~~|°C<br>~~Pe~~<br>~~—————————————~~<br>~~es ns~~|Extended Commercial<br>~~Pe~~<br>~~—————————————~~|
|||-40<br>~~—————————————~~<br>~~ee~~|–<br>~~—————————————~~<br>~~es es ns~~|+85<br>~~—————————————~~<br>~~es ns~~|°C<br>~~—————————————~~<br>~~es ns~~|Industrial<br>~~—————————————~~|
|**Supply Voltage and Current Consumption**<br>~~ee~~<br>~~—————————————~~<br>~~ee~~<br>~~es es ns~~<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~es~~|||||||
|**Supply Voltage**|Vdd|1.62<br>~~ee~~<br>~~ee~~|1.8<br>~~ee~~<br>~~ee~~|1.98<br>~~es~~<br>~~ee~~|V|~~ee~~|
|||2.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.75<br>~~es~~<br>~~ee~~<br>~~es~~|V||
|||2.52<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.8<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.08<br>~~ee~~<br>~~es~~<br>~~ee~~|V||
|||2.7<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.0<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.3<br>~~es~~<br>~~ee~~<br>~~es~~|V||
|||2.97<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.3<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.63<br>~~ee~~<br>~~es~~<br>~~ee~~|V<br>~~ee~~||
|||2.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~<br>~~es~~|3.63<br>~~es~~<br>~~ee~~<br>~~es~~|V<br>~~ee~~||
|**Current Consumption**|Idd|–<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.8<br>~~ee~~<br>~~es~~<br>~~es es~~|4.5<br>~~ee~~<br>~~es~~<br>~~es ne~~|mA<br>~~ee~~<br>~~ne~~|No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V<br>~~ee~~|
|||–<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.7<br>~~es ~~<br>~~es es~~<br>~~es Gs~~|4.2<br> ~~es~~<br>~~es ne~~<br>~~Gs~~|mA<br>~~ne~~<br>~~ne~~|No load condition, f = 20 MHz, Vdd = 2.5V|
|||–<br>~~ee~~<br>~~ee~~|3.5<br>~~es es~~<br>~~es Gs~~|4.1<br>~~es ne~~<br>~~Gs~~|mA<br>~~ne~~<br>~~ne~~|No load condition, f = 20 MHz, Vdd = 1.8V|
|**OE Disable Current**<br>~~e~~|I_od<br>~~e~~|–<br>~~ee ~~<br>~~e~~~~**e**~~<br>~~e~~|–<br> ~~es Gs~~<br>~~**e**~~<br>~~es~~|4.3<br>~~Gs ~~<br>~~**e**~~<br>~~ee~~|mA<br> ~~ne~~<br>~~**e**~~<br>~~es~~|Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state.<br>~~**e**e~~<br>~~ee~~|
|||–<br>~~e~~~~**e**~~<br>~~e~~<br>~~ee~~|–<br>~~**e**~~<br>~~es~~<br>~~es es~~|4.1<br>~~**e**~~<br>~~ee~~<br>~~es ns~~|mA<br>~~**e**~~<br>~~es~~<br>~~ns~~|Vdd = 1.8V, OE = Low, Output in high Z state.<br>~~**e**e~~<br>~~ee~~|
|**Standby Current**|I_std|–<br>~~e~~<br>~~ee~~<br>~~ee~~|2.6<br>~~es ~~<br>~~es es~~<br>~~es~~|4.3<br> ~~ee ~~<br>~~es ns~~<br>~~es~~|A<br> ~~es~~<br>~~ns~~<br>~~es~~|Vdd = 2.8V to 3.3V, ST<br>= Low, Output is weakly pulled down<br>~~ee~~|
|||–<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.4<br>~~es es~~<br>~~es~~<br>~~es es~~|2.5<br>~~es ns~~<br>~~es~~<br>~~es~~|A<br>~~ns~~<br>~~es~~|Vdd = 2.5V, ST<br>= Low, Output is weakly pulled down|
|||–<br>~~ee~~<br>~~ee~~|0.6<br>~~es~~<br>~~es es~~|1.3<br>~~es ~~<br>~~es~~|A<br> ~~es~~|Vdd = 1.8V, ST<br>= Low, Output is weakly pulled down|
|**LVCMOS Output Characteristics**<br>~~ee es es~~<br>~~Pe~~<br>~~Pia~~<br>~~eeesesnr~~|||||||
|**Duty Cycle**<br>~~Pia~~|DC|45<br>~~ee~~|–<br>~~es~~|55<br>~~es~~|%<br>~~nr~~|All Vdds|
|**Rise/Fall Time**<br>~~Pia~~<br>~~es~~|Tr, Tf|–<br>~~ee~~<br>~~e~~~~**e**~~|1.0<br>~~es~~<br>~~**e**s~~|2.0<br>~~es~~<br>~~es~~|ns<br>~~nr~~<br>~~ns~~|Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%|
|||–<br>~~ee ~~<br>~~e~~~~**e**~~|1.3<br> ~~es ~~<br>~~**e**s~~|2.5<br> ~~es ~~<br>~~es~~|ns<br> ~~nr~~<br>~~ns~~|Vdd =1.8V, 20% - 80%|
|||–<br>~~e~~~~**e**~~|–<br>~~**e**s~~|2.0<br>~~es~~|ns<br>~~ns~~|Vdd = 2.25V - 3.63V, 20% - 80%|
|**Output High Voltage**<br>~~es~~|VOH|90%<br>~~e~~~~**e**~~|–<br>~~**e**s~~|–<br>~~es~~|Vdd<br>~~ns~~|IOH = -4 mA (Vdd = 3.0V or 3.3V)<br>IOH = -3 mA (Vdd = 2.8V or 2.5V)<br>IOH = -2 mA (Vdd = 1.8V)|
|**Output Low Voltage**<br>~~es~~|VOL|–<br>~~e~~~~**e** ~~|–<br> ~~**e**s ~~|10%<br> ~~es~~|Vdd<br>~~ns~~|IOL = 4 mA (Vdd = 3.0V or 3.3V)<br>IOL = 3 mA (Vdd = 2.8V or 2.5V)<br>IOL = 2 mA (Vdd = 1.8V)|



**SiTime Corporation** 

**990 Almanor Avenue, Sunnyvale, CA 94085** 

**(408) 328-4400** 

**www.sitime.com** 

**Rev. 1.0** 

**Revised May 13, 2015** 

**SiT2001B Single-Chip, One-Output Clock Generator** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Table 1. Electrical Characteristics** 

|**Parameters**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|**Input Characteristics**|||||||
|**Input High Voltage**|VIH|70%|–|–|Vdd|Pin 3, OE or ST|
|**Input Low Voltage**|VIL|–|–|30%|Vdd|Pin 3, OE or ST|
|**Input Pull-up Impedence**|Z_in|50|87|150|k|Pin 3, OE logic high or logic low, or ST<br>logic high|
|||2|–|–|M|Pin 3, ST<br>logic low|
|**Startup and Resume Timing**|||||||
|**Startup Time**|T_start|–|–|5|ms|Measured from the time Vdd reaches its rated minimum value|
|**Enable/Disable Time**|T_oe|–|–|130|ns|f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * clock<br>periods|
|**Resume Time**|T_resume|–|–|5|ms|Measured from the time ST pin crosses 50% threshold|
|**Jitter**|||||||
|**RMS Period Jitter**|T_jitt|–|1.8|3|ps|f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V|
|||–|1.8|3|ps|f = 75 MHz, Vdd = 1.8V|
|**Peak-to-peak Period Jitter**|T_pk|–|12|20|ps|f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V|
|||–|14|25|ps|f = 75 MHz, Vdd = 1.8V|
|**RMS Phase Jitter (random)**|T_phj|–|0.5|0.9|ps|f = 75 MHz,Integration bandwidth = 900 kHz to 7.5 MHz|
|||–|1.3|2|ps|f = 75 MHz,Integration bandwidth = 12 kHz to 20 MHz|



**Table 2. Pin Description Top View Pin Symbol Functionality** 1 GND Power Electrical ground OE/ST/NC NC GND 2 NC No Connect No connect 3 2 1 Output H[[1]] : specified frequency output Enable L: output is high impedance. Only output driver is disabled. H or Open[[1]] : specified frequency output 3 OE/ ST/NC Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. No Connect Any voltage between 0 and Vdd or Open[[1]] : Specified frequency output. Pin 3 has no function. 4 5 4 VDD Power Power supply voltage[[2]] VDD OUT 5 OUT Output Oscillator output ~~=~~ **Notes: Figure 1. Pin Assignments** 1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 3 is not externally driven. If pin 3 needs to be left floating, use the NC option. 

2. A capacitor of value 0.1 µF or higher between Vdd and GND is required. 

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**SiT2001B Single-Chip, One-Output Clock Generator** 

 The Smart Timing Choice  The Smart Timing Choice 

## **Table 3. Absolute Maximum Limits** 

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. 

|**Parameter**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|
|**Storage Temperature**|-65|150|°C|
|**Vdd**|-0.5|4|V|
|**Electrostatic Discharge**|–|2000|V|
|**Soldering Temperature (follow standard Pb free soldering guidelines)**|–|260|°C|
|**Junction Temperature[3]**|–|150|°C|



## **Note:** 

3. Exceeding this temperature for extended period of time may damage the device. 

**Table 4. Thermal Consideration[[4]]** 

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**----- Start of picture text -----**<br>
 JA, 4 Layer Board   JC, Bottom<br>Package (°C/W) (°C/W)<br>SOT23-5 421 175<br>ee<br>Note:<br>4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.<br>**----- End of picture text -----**<br>


**Table 5. Maximum Operating Junction Temperature[[5]]** 

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Max Operating Temperature (ambient) Maximum Operating Junction Temperature<br>70°C 80°C<br>85°C 95°C<br>———<br>Note:<br>5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.<br>**----- End of picture text -----**<br>


## **Table 6. Environmental Compliance** 

|**Parameter**|**Condition/Test Method**|
|---|---|
|**Mechanical Shock**|**MIL-STD-883F, Method 2002**|
|**Mechanical Vibration**|**MIL-STD-883F, Method 2007**|
|**Temperature Cycle**|**JESD22, Method A104**|
|**Solderability**|**MIL-STD-883F, Method 2003**|
|**Moisture Sensitivity Level**|**MSL1 @ 260°C**|



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**SiT2001B Single-Chip, One-Output Clock Generator**  The Smart Timing Choice  The Smart Timing Choice ~~Time~~ **Test Circuit and Waveform[[6]]** 

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Test  Vout Vdd<br>Point<br>5 4<br>Power<br>15 pF  Supply<br>0.1µF<br>(including probe  1 2 3<br>and fixture<br>capacitance)<br>Vdd<br>1kΩ OE/ST Function<br>**----- End of picture text -----**<br>


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Tr Tf<br>80% Vdd<br>50%<br>20% Vdd<br>High Pulse Low Pulse<br>(TH)<br>(TL)<br>Period<br>Be<br>**----- End of picture text -----**<br>


**Figure 2. Test Circuit** 

## **Figure 3. Output Waveform** 

## **Note:** 

6. Duty Cycle is computed as Duty Cycle = TH/Period. 

## **Timing Diagrams** 

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Vdd<br>Vdd<br>90% Vdd 50% Vdd<br>T_start No Glitch [7] ST Voltage T_resume<br>Pin 4 Voltage  during start up<br>= e e<br>CLK Output<br>CLK Output HZ<br>HZ<br>T_start: Time to start from power-off  T_resume: Time to resume from ST<br>**----- End of picture text -----**<br>


**Figure 4. Startup Timing (OE/ST Mode)** 

**Figure 5. Standby Resume Timing (ST Mode Only)** 

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**----- Start of picture text -----**<br>
Vdd<br>50% Vdd<br>T_oe<br>OE Voltage<br>CLK Output<br>HZ<br>T_oe: Time to re-enable the clock output<br>**----- End of picture text -----**<br>


**Figure 6. OE Enable Timing (OE Mode Only)** 

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**----- Start of picture text -----**<br>
Vdd<br>OE Voltage<br>50% Vdd<br>T_oe<br>CLK Output<br>HZ<br>T_oe: Time to put the output in High Z mode<br>**----- End of picture text -----**<br>


**Figure 7. OE Disable Timing (OE Mode Only)** 

**Note:** 

7. SiT2001 has “no runt” pulses and “no glitch” output during startup or resume. 

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**SiT2001B Single-Chip, One-Output Clock Generator** 

 The Smart Timing Choice  The Smart Timing Choice 

 ~~ee~~ The Smart Timing Choice  

## **Performance Plots[[8]]** 

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1.8 2.5 2.8 3.0 3.3<br>6.0<br>5.5 Pitt EL EL | |<br>5.0<br>CCC ee<br>4.54.0 ||>|| HalLaer| ”eezeae =<br>3.5<br>3.0 wertaqtt<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Frequency (MHz)<br>Figure 8. Idd vs Frequency<br>1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>4.0<br>3.53.0 TTEEEEEEEEEE)LILLE<br>2.5<br>ALLELE LLE SL]<br>2.0<br>1.5 WAV Ae<br>1.0 A ee<br>0.5<br>0.0 PEa EEEELELLE [4<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Frequency (MHz)<br>Idd (mA)<br>RMS period jitter (ps)<br>**----- End of picture text -----**<br>


**Figure 10. RMS Period Jitter vs Frequency** 

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1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5 ee ee ee<br>0.0<br>-40 -15 10 35 60 85<br>Temperature (°C)<br>Rise time (ns)<br>**----- End of picture text -----**<br>


**Figure 12. 20%-80% Rise Time vs Temperature** 

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DUT1 DUT2 DUT3 DUT4 DUT5<br>DUT6 DUT7 DUT8 DUT9 DUT10<br>20<br>15 ee<br>10<br>5 PPPi rrr tt<br>0 ;<br>-5 LT<br>-10<br>SSS<br>-15 FEE<br>-20 HOOP EEE ee e s<br>-40 -30 -20 -10 0 10 20 30 40 50 60 70 80<br>Temperature (°C)<br>Figure 9. Frequency vs Temperature<br>1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>55<br>54 CELL<br>53 LL LLL<br>| 5251 pttGRRRRRtet REEtt<br>5049  ——_———<br>48<br>a<br>47<br>46 PrP<br>rr<br>45 Fit yy<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Frequency (MHz)<br>Figure 11. Duty Cycle vs Frequency<br>1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5 ee ee<br>0.0<br>-40 -15 10 35 60 85<br>Temperature (°C)<br>Frequency (ppm)<br>Duty cycle (%)<br>Fall time (ns)<br>**----- End of picture text -----**<br>


**Figure 13. 20%-80% Fall Time vs Temperature** 

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> **Single-Chip, One-Output Clock GeneratorSiT2001B** KyiTime:  ~~a~~ The Smart Timing Choice  

 The Smart Timing Choice  The Smart Timing Choice 

## **Performance Plots[[8]]** 

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1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V<br>[- - -—- -—- — |<br>2.0 0.9<br>1.8 | | [ [| ff | 0.8 Poof<br>1.6 ee eee ee 0.7 P|fff<br>1.4 0.6<br>I [PJ (ps)]<br>/ —— I N<br>1.2 Ape= ) 0.5 SINE| y | | ft<br>1.0 0.4<br>10 30 50 70 90 110 10 30 50 70 90 110<br>Frequency (MHz) Frequency (MHz) Frequency (MHz)<br>IPJ (ps) IPJ (ps)<br>**----- End of picture text -----**<br>


**Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[[9]]** 

**Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[[9]]** 

## **Notes:** 

8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 

9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz. 

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**SiT2001B Single-Chip, One-Output Clock Generator** 

 ~~a~~ The Smart Timing Choice  

 The Smart Timing Choice  The Smart Timing Choice 

## **Programmable Drive Strength** 

The SiT2001 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: 

- Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. 

- Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. 

- Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. 

For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section: http://www.sitime.com/support/application-notes. 

## **EMI Reduction by Slowing Rise/Fall Time** 

Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 

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trise=0.05<br>trise=0.1<br>10 trise=0.15<br>trise=0.2<br>0 trise=0.25<br>trise=0.3<br>-10 trise=0.35<br>trise=0.4<br>-20 trise=0.45<br>-30 R O E E E EE E : : |<br>-40<br>-50<br>-60<br>-70<br>-80<br>1 3 5 7 9 11<br>Harmonic number<br>Harmonic amplitude (dB)<br>**----- End of picture text -----**<br>


**Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time** 

The SiT2001 can support up to 60 pF in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. 

## **SiT2001 Drive Strength Selection** 

Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 

1. Select the table that matches the SiT2001 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 

2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 

3. Under the capacitive load column, select the desired rise/fall times. 

4. The left-most column represents the part number code for the corresponding drive strength. 

5. Add the drive strength code to the part number for ordering purposes. 

## **Calculating Maximum Frequency** 

Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature can be calculated as the following: 

**==> picture [126 x 20] intentionally omitted <==**

where Trf_20/80 is the typical value for 20%-80% rise/fall time. 

## _**Example 1**_ 

Calculate fMAX for the following condition: 

- Vdd = 1.8V (Table 7) 

- Capacitive Load: 30 pF 

- Desired Tr/f time = 3 ns (rise/fall time part number code = E) 

Part number for the above example: SiT2001BI **E** S2-18E-66.666660 

## **Jitter Reduction with Faster Rise/Fall Time** 

Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. 

Drive strength code is inserted here. Default setting is “-” 

## **High Output Load Capability** 

The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT2001 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT2001. 

**Page 7 of 12** 

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## **Rise/Fall Time (20% to 80%) vs CLOAD Tables** 

**Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD** 

## **Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD** 

|**Drive Strength \ CLOAD**<br>**5 pF**<br>**15 pF**<br>**30 pF**<br>**45 pF**<br>**60 pF**<br>**L**<br>6.16<br>11.61<br>22.00<br>31.27<br>39.91<br>**A**<br>3.19<br>6.35<br>11.00<br>16.01<br>21.52<br>**R**<br>2.11<br>4.31<br>7.65<br>10.77<br>14.47<br>**B**<br>1.65<br>3.23<br>5.79<br>8.18<br>11.08<br>**T**<br>0.93<br>1.91<br>3.32<br>4.66<br>6.48<br>**E**<br>0.78<br>1.66<br>2.94<br>4.09<br>5.74<br>**Rise/Fall Time Typ (ns)**<br>**Drive Strength \ CLOAD**<br>**5 pF**<br>**15 pF**<br>**30 pF**<br>**45 pF**<br>**60 pF**<br>**L**<br>4.13<br>8.25<br>12.82<br>21.45<br>27.79<br>**A**<br>2.11<br>4.27<br>7.64<br>11.20<br>14.49<br>**R**<br>1.45<br>2.81<br>5.16<br>7.65<br>9.88<br>**B**<br>1.09<br>2.20<br>3.88<br>5.86<br>7.57<br>**T**<br>0.62<br>1.28<br>2.27<br>3.51<br>4.45<br>**E or "‐": default**<br>0.54<br>1.00<br>2.01<br>3.10<br>4.01<br>**Rise/Fall Time Typ (ns)**<br>~~—S eee eee~~<br>~~——S eo~~<br>~~——~~|
|---|
|**U**<br>0.70<br>1.48<br>2.64<br>3.68<br>5.09<br>**F or "‐": default**<br>0.65<br>1.30<br>2.40<br>3.35<br>4.56<br>**U**<br>0.43<br>0.96<br>1.81<br>2.79<br>3.65<br>**F**<br>0.34<br>0.88<br>1.64<br>2.54<br>3.32<br>~~So~~|



## **Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD** 

|**Rise/Fall Time Typ (ns)**<br>~~PF~~<br>~~rrrt—CTlSmGeeet~~<br>~~|~~|**Rise/Fall Time Typ (ns)**<br>~~PF~~<br>~~rrrt—CTlSmGeeet~~<br>~~|~~|**Rise/Fall Time Typ (ns)**<br>~~PF~~<br>~~rrrt—CTlSmGeeet~~<br>~~|~~|**Rise/Fall Time Typ (ns)**<br>~~PF~~<br>~~rrrt—CTlSmGeeet~~<br>~~|~~|**Rise/Fall Time Typ (ns)**<br>~~PF~~<br>~~rrrt—CTlSmGeeet~~<br>~~|~~|**Rise/Fall Time Typ (ns)**<br>~~PF~~<br>~~rrrt—CTlSmGeeet~~<br>~~|~~|
|---|---|---|---|---|---|
|**Drive Strength \ CLOAD**<br>~~PF~~<br>~~rrrt—CT~~|**5 pF**<br>~~rrrt—CTlS~~|**15 pF**<br>~~lSmG~~|**30 pF**<br>~~mGee~~|**45 pF**<br>~~eeet~~|**60 pF**<br>~~et~~<br>~~|~~|
|**L**<br>~~PF~~<br>~~rrrt—CT~~<br>~~a~~|3.77<br>~~rrrt—CT lS~~<br>~~a~~|7.54<br>~~lS mG~~<br>~~a~~|12.28<br>~~mG ee~~<br>~~a~~|19.57<br>~~ee et~~<br>~~a~~|25.27<br>~~et~~<br>~~|~~<br>~~a~~|
|**A**<br>~~a~~|1.94<br>~~a~~|3.90<br>~~a~~|7.03<br>~~a~~|10.24<br>~~a~~|13.34<br>~~a~~|
|**R**<br>~~——~~|1.29<br>~~——~~|2.57<br>~~——~~|4.72<br>~~——~~|7.01<br>~~——~~|9.06<br>~~——~~|
|**B**<br>~~——~~<br>~~PO~~|0.97<br>~~——~~|2.00<br>~~——~~|3.54<br>~~——~~|5.43<br>~~——~~|6.93<br>~~——~~|
|**T**<br>~~PO~~|0.55|1.12|2.08|3.22|4.08|
|**E or "‐": default**<br>~~PO~~|0.44|1.00|1.83|2.82|3.67|
|**U**|0.34|0.88|1.64|2.52|3.30|
|**F**|0.29|0.81|1.48|2.29|2.99|



**Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD** 

|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|
|---|---|---|---|---|---|
|**Drive Strength \ CLOAD**|**5 pF**|**15 pF**|**30 pF**|**45 pF**|**60 pF**|
|**L**|3.60|7.21|11.97|18.74|24.30|
|**A**|1.84|3.71|6.72|9.86|12.68|
|**R**|1.22|2.46|4.54|6.76|8.62|
|**B**|0.89|1.92|3.39|5.20|6.64|
|**T or "‐": default**|0.51|1.00|1.97|3.07|3.90|
|**E**|0.38|0.92|1.72|2.71|3.51|
|**U**|0.30|0.83|1.55|2.40|3.13|
|**F**|0.27|0.76|1.39|2.16|2.85|



**Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD** 

|**Rise/Fall Time Typ (ns)**<br>~~ee~~|**Rise/Fall Time Typ (ns)**<br>~~ee~~|**Rise/Fall Time Typ (ns)**<br>~~ee~~|**Rise/Fall Time Typ (ns)**<br>~~ee~~|**Rise/Fall Time Typ (ns)**<br>~~ee~~|**Rise/Fall Time Typ (ns)**<br>~~ee~~|
|---|---|---|---|---|---|
|**Drive Strength \ CLOAD**<br>~~ee~~|**5 pF**<br>~~ee~~<br>~~ee~~|**15 pF**<br>~~ee~~|**30 pF**<br>~~ee~~|**45 pF**<br>~~ee~~|**60 pF**<br>~~ee~~|
|**L**<br>~~ee~~|3.39<br>~~ee~~<br>~~ee~~|6.88<br>~~ee~~|11.63<br>~~ee~~|17.56<br>~~ee~~|23.59<br>~~ee~~|
|**A**<br>~~ee~~|1.74<br>~~ee~~|3.50<br>~~ee~~|6.38<br>~~ee~~|8.98<br>~~ee~~|12.19<br>~~ee~~|
|**R**<br>~~———~~|1.16<br>~~———~~|2.33<br>~~———~~|4.29<br>~~———~~|6.04<br>~~———~~|8.34<br>~~———~~|
|**B**<br>~~———~~|0.81<br>~~———~~|1.82<br>~~———~~|3.22<br>~~———~~|4.52<br>~~———~~|6.33<br>~~———~~|
|**T or "‐": default**<br>~~———~~<br>~~— ee~~<br>~~—~~|0.46<br>~~———~~<br>~~ee~~<br>~~—<————~~|1.00<br>~~———~~<br>~~ee~~<br>~~—<————~~|1.86<br>~~———~~<br>~~ee~~<br>~~—<————~~|2.60<br>~~———~~<br>~~ee~~<br>~~—<————~~|3.84<br>~~———~~<br>~~ee~~<br>~~—<————~~|
|**E**<br>~~— ee~~<br>~~—~~|0.33<br>~~ee~~<br>~~—<————~~|0.87<br>~~ee~~<br>~~—<————~~|1.64<br>~~ee~~<br>~~—<————~~|2.30<br>~~ee~~<br>~~—<————~~|3.35<br>~~ee~~<br>~~—<————~~|
|**U**<br>~~— ee~~<br>~~—~~|0.28<br>~~ee~~<br>~~—<————~~|0.79<br>~~ee~~<br>~~—<————~~|1.46<br>~~ee~~<br>~~—<————~~|2.05<br>~~ee~~<br>~~—<————~~|2.93<br>~~ee~~<br>~~—<————~~|
|**F**<br>~~—~~|0.25<br>~~—<————~~|0.72<br>~~—<————~~|1.31<br>~~—<————~~|1.83<br>~~—<————~~|2.61<br>~~—<————~~|



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**SiT2001B Single-Chip, One-Output Clock Generator** 

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## **Pin 3 Configuration Options (OE, ST, or NC)** 

Pin 3 of the SiT2001 can be factory-programmed to support three modes: Output Enable (OE), standby (ST) or No Connect (NC). 

In addition, the SiT2001 supports “no runt” pulses, and “no glitch” output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18. 

## **Output Enable (OE) Mode** 

In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1µs. 

## **Standby (ST) Mode** 

In the ST mode, a device enters into the standby mode when Pin 3 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few µA. When ST is pulled High, the device goes through the “resume” process, which can take up to 5 ms. 

**Figure 17. Startup Waveform vs. Vdd** 

## **No Connect (NC) Mode** 

In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 3. 

Table 12 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode. 

**Table 12. OE vs. ST vs. NC** 

**OE ST NC** Active current 20 MHz (max, 1.8V) 4.1 mA 4.1 mA 4.1 mA OE disable current (max. 1.8V) 4.1 mA N/A N/A Standby current (typical 1.8V) N/A 0.6 uA N/A OE enable time at 110 MHz (max) 130 ns N/A N/A Resume time from standby N/A 5 ms N/A (max, all frequency) Output driver in OE disable/standby mode High Z weak N/A pull-down ~~===~~ **Output on Startup and Resume** The SiT2001 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. 

**==> picture [160 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18. Startup Waveform vs. Vdd<br>(Zoomed-in View of Figure 17)<br>t *<br>**----- End of picture text -----**<br>


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## **Dimensions and Patterns** 

**==> picture [443 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Size – Dimensions (Unit: mm) [[10]] Recommended Land Pattern (Unit: mm) [[11]]<br>2.90 x 2.80 mm SOT23-5<br>**----- End of picture text -----**<br>


**Notes:** 

10.Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 11. A capacitor value of 0.1 µF between Vdd and GND is required 

**Table 13. Dimension Table** 

|**Symbol**<br>~~ee~~|**Min.**<br>~~ee ee~~|**Nom.**<br>~~ee~~|**Max.**<br>~~ee~~|
|---|---|---|---|
|A<br>~~ee~~<br>~~ee~~|0.90<br>~~ee ee~~<br>~~ee~~|1.25<br>~~ee~~<br>~~ee~~|1.45<br>~~ee~~|
|A1<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.00<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|0.05<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.15<br>~~ee~~|
|A2<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.90<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.10<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.30|
|b<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.35<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.40<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.50|
|c<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.08<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.15<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.20|
|D<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.80<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.90<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.00|
|E<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.60<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.80<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.00|
|E1<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.50<br>~~ee~~<br>~~ee~~<br>~~es ee~~|1.625<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.75|
|L<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.35<br>~~ee~~<br>~~es ee~~|0.45<br>~~ee~~<br>~~ee~~|0.60|
|L1<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.60 REF<br>~~es ee~~|||
|e<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.95 BSC.<br>~~ee~~|||
|e1<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.90 BSC.<br>~~ee~~<br>~~eeee~~|||
|<br>~~ee~~<br>~~ee~~|0°<br>~~ee~~<br>~~ee~~|2.5°<br>~~ee~~<br>~~ee~~|8°<br>~~ee~~|



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**==> picture [495 x 763] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiT2001B<br>Single-Chip, One-Output Clock Generator<br><br>The Smart Timing Choice <br>The Smart Timing Choice<br>Ordering Information<br>The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number<br>Generator.<br>SiT2001BI -S2-18E -25.000025D<br>Packing Method<br>Part Family “D”:  8 mm Tape & Reel, 3ku reel<br>OO “SiT2001” “E”:  8 mm Tape & Reel, 1ku reel<br> Blank for Bulk<br>Revision Letter<br>“B” is the revision<br>Frequency<br>1.000000 to 110.000000 MHz<br>Temperature Range<br>“C” Commercial  -20ºC to 70ºC<br>“I” Industrial -40ºC to 85ºC Feature Pin<br>“E” for Output Enable<br>“S” for Standby<br>Output Drive Strength “N” for No Connect<br>“–” Default (datasheet limits)<br>See Tables 7 to 11 for rise/fall  Supply Voltage<br>times<br>“18” for 1.8V ±10%<br>“L” “T” “25” for 2.5V ±10%<br>“A” “E” “28” for 2.8V ±10%<br>“R” “U”<br>“30” for 3.0V ±10%<br>“B” “F”<br>“33” for 3.3V ±10%<br>“XX” for 2.5V -10% to 3.3V +10%<br>Package Size<br>Frequency Stability<br>“S”  SOT23-5 (2.9 x 2.8 mm)<br>“1” for ±20 ppm<br>“2” for ±25 ppm<br>“3” for ±50 ppm<br>ae<br>Rev. 1.0 Page 11 of 12 www.sitime.com<br>**----- End of picture text -----**<br>


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## **Table 14. Additional Information** 

|**Document**|**Description**|**Download Link**|
|---|---|---|
|**Time Machine II**|MEMS oscillator programmer|http://www.sitime.com/support/time-machine-oscillator-programmer|
|**Field**<br>**Programmable**<br>**Oscillators**|Devices that can be<br>programmable in the field by<br>Time Machine II|http://www.sitime.com/products/field-programmable-oscillators|
|**Manufacturing**<br>**Notes**|Tape & Reel dimension,<br>reflow profile and other<br>manufacturing related info|http://www.sitime.com/component/docman/doc_download/243-manufacturing-notes-for-sitime-oscillators|
|**Qualification**<br>**Reports**|RoHS report, reliability<br>reports, composition reports|http://www.sitime.com/support/quality-and-reliability|
|**Performance**<br>**Reports**|Additional performance data<br>such as phase noise, current<br>consumption and jitter for<br>selected frequencies|http://www.sitime.com/support/performance-measurement-report|
|**Termination**<br>**Techniques**|Termination design<br>recommendations|http://www.sitime.com/support/application-notes|
|**Layout Techniques**|Layout recommendations|http://www.sitime.com/support/application-notes|



## **Revision History** 

**Table 15. Datasheet Version and Change Log** 

**Version Release Date Change Summary** 0.95 3/13/15 Initial Release 1.0 5/13/15 • Revised the Electrical Characteristics, Timing Diagrams and Performance Plots • Revised SOT23 package diagram ~~a~~ 

© SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 

**Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. 

## CRITICAL USE EXCLUSION POLICY 

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. 

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. 

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## **Supplemental Information** 

The Supplemental Information section is not part of the datasheet and is for informational purposes only. 

**SiTime Corporation** 

**990 Almanor Avenue, Sunnyvale, CA 94085** 

**(408) 328-4400** 

**www.sitime.com** 

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## **Silicon MEMS Outperforms Quartz** 

**SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.1** 

**990 Almanor Avenue, Sunnyvale, CA 94085** 

**(408) 328-4400** 

**www.sitime.com Revised October 5, 2013** 

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## **Silicon MEMS Outperforms Quartz** 

## **Best Reliability** 

Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability 

## **Best Electro Magnetic Susceptibility (EMS)** 

SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. 

## **Why is SiTime Best in Class:** 

   - Internal differential architecture for best common mode noise rejection 

   - Electrostatically driven MEMS resonator is more immune to EMS 

- World-class MEMS and CMOS design expertise 

**==> picture [223 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
Mean Time Between Failure (Million Hours)<br>SiTime 500<br>IDT (Fox)  38<br>SiTime<br>20X Better<br>Epson 28<br>TXC 16<br>Pericom 14<br>0 200 400 600<br>**----- End of picture text -----**<br>


**Figure 1. Reliability Comparison[[1]]** 

**==> picture [214 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiTime vs Quartz<br>Electro Magnetic Susceptibility (EMS)<br>- 30<br>- 39 - 40<br>- 40 - 42 - 43 - 45<br>- 50<br>- 60 SiTime<br>54X Better<br>- 70 - 73<br>- 80<br>- 90<br>Kyocera Epson TXC CW SiLabs SiTime<br>Average Spurs  (dB)<br>**----- End of picture text -----**<br>


**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]** 

## **Best Aging** 

Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. 

## **Best Power Supply Noise Rejection** 

SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. 

## **Why is SiTime Best in Class:** 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability 

   - On-chip regulators and internal differential architecture for common mode noise rejection 

   - Best analog CMOS design expertise 

- Inherently better immunity of electrostatically driven MEMS resonator 

**==> picture [191 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiTime MEMS vs. Quartz Aging<br>SiTime MEMS Oscillator Quartz Oscillator<br>10<br>8.0<br>8<br>SiTime<br>6 2X Better<br>4 3.5<br>3.0<br>2 1.5<br>0<br>1-Year 10-Year<br>Aging (±PPM)<br>**----- End of picture text -----**<br>


**Figure 2. Aging Comparison[[2]]** 

**==> picture [220 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
Power Supply Noise Rejection<br>SiTIme NDK Epson Kyocera<br>5.0<br>4.0<br>3.0<br>2.0<br>SiTimeSiTime<br>1.0 3X Better<br>0.0<br>10 100 1,000 10,000<br>Power Supply Noise Frequency (kHz)<br>Injected Noise (ps/mv)<br>Additive Integrated Phase Jitter per mVp-p<br>**----- End of picture text -----**<br>


**Figure 4. Power Supply Noise Rejection[[4]]** 

**Silicon MEMS Outperforms Quartz Rev. 1.1** 

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## **Silicon MEMS Outperforms Quartz** 

## **Best Vibration Robustness** 

High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

## **Best Shock Robustness** 

SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

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Vibration Sensitivity vs. Frequency 16 Differential XO Shock Robustness - 500  g<br>SiTime TXC Epson Connor Winfield Kyocera SiLabs<br>14.3<br>100.00 14<br>12.6<br>12<br>10.00 10<br>8<br>SiTime<br>6<br>1.00 SiTime 3.9 Up to 25x Better<br>Up to 30x  4<br>Better  2.9 2.5<br>2<br>0.6<br>0.10<br>=S 0 -_<br>10 100 1000<br>Vibration Frequency (Hz) Kyocera Epson TXC CW SiLabs SiTime<br>Figure 5. Vibration Robustness [[5]] Figure 6. Shock Robustness [[6]]<br>Data Source: Reliability documents of named companies.<br>Data source: SiTime and quartz oscillator devices datasheets.<br>Test conditions for Electro Magnetic Susceptibility (EMS):<br>• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)<br>• Field strength: 3V/m<br>• Radiated signal modulation: AM 1 kHz at 80% depth<br>• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps<br>• Antenna polarization: Vertical<br>• DUT position: Center aligned to antenna<br>Devices used in this test:<br>SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz<br>Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz<br>TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz<br>Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz<br>Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz<br>SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz<br>50 mV pk-pk Sinusoidal voltage.<br>Devices used in this test:<br>SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz<br>NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz<br>Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz<br>Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz<br>Vibration Sensitivity (ppb/g)<br>Peak Frequency Deviation (PPM)<br>**----- End of picture text -----**<br>


## **Notes:** 

1. Data Source: Reliability documents of named companies. 

2. Data source: SiTime and quartz oscillator devices datasheets. 

3. Test conditions for Electro Magnetic Susceptibility (EMS): 

4. 50 mV pk-pk Sinusoidal voltage. 

5. **Devices used in this test:** same as EMS test stated in Note 3. 

6. Test conditions for shock test: 

- MIL-STD-883F Method 2002 

- Condition A: half sine wave shock pulse, 500-g, 1ms 

- Continuous frequency measurement in 100 μs gate time for 10 seconds 

- **Devices used in this test:** same as EMS test stated in Note 3 

7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. 

**Silicon MEMS Outperforms Quartz Rev. 1.1** 

**www.sitime.com** 

## **Document Feedback Form** 

 The Smart Timing Choice  The Smart Timing Choice 

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SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form<br>below to productsupport@sitime.com<br>1. Does the Electrical Characteristics table provide complete information?  Yes No<br>If No, what parameters are missing?<br>_________________________________________________________________________________________________<br>2. Is the organization of this document easy to follow? Yes No<br>If “No,” please suggest improvements that we can make:<br>_________________________________________________________________________________________________<br>3. Is there any application specific information that you would like to see in this document? (Check all that apply)<br>EMI  Termination recommendations  Shock and vibration performance  Other<br>If “Other,” please specify:<br>_________________________________________________________________________________________________<br>4. Are there any errors in this document?  Yes No<br>If “Yes”, please specify (what and where):<br>_________________________________________________________________________________________________<br>5. Do you have additional recommendations for this document?<br>_________________________________________________________________________________________________<br>Name ________________________________________________________________________________<br>Title ________________________________________________________________________________<br>Company _________________________________________________________________________________________<br>Address _________________________________________________________________________________________<br>City / State or Province / Postal Code / Country ___________________________________________________________<br>Telephone __________________________________<br>Application ________________________________________________________________________________________<br>Would you like a reply? Yes No<br>Thank you for your feedback. Please click the email icon in your Adobe Reader tool bar and send to productsupport@sitime.com.<br>Or you may use our online feedback form.<br>**----- End of picture text -----**<br>


**Feedback Form Rev. 1.0** 

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## Links

- [View this product on Novapart](https://novapart.co/products/SIT2001BI-S2-33E-50.000000G/clock-generator-50-mhz-5-pin-1-output-sot-23)
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---

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