# MEMS Oscillator, 25 MHz, SMD, 3.2mm x 2.5mm, 25 ppm, 3.3 V, SiT1602, LVCMOS / HCMOS

![Product image](https://novapart.co/image/farnell:2850386RL/)

**URL**: https://novapart.co/products/SIT1602AI-22-33E-25.000000G/mems-oscillator-25-mhz-smd-32mm-x-25mm-ppm-33-v
**SKU**: SIT1602AI-22-33E-25.000000G
**Manufacturer**: SITIME
**Category**: Crystals & Oscillators || Oscillators || MEMS Oscillators
**Price**: €1.0900
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2850386RL/)

**SiT1602B** 

Low Power, Standard Frequency Oscillator 

## **Features** 

- 52 standard frequencies between 3.57 MHz and 77.76 MHz 

- 100% pin-to-pin drop-in replacement to quartz-based XO 

- Excellent total frequency stability as low as ±20 ppm 

- Operating temperature from -40°C to 85°C. For 125°C and/or 

## **Applications** 

      - Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc 

      - Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc. 

   - -55°C options, refer to SiT1618, SiT8918, SiT8920 

- Low power consumption of 3.5 mA typical at 1.8V 

- Standby mode for longer battery life 

- Fast startup time of 5 ms 

- LVCMOS/HCMOS compatible output 

**==> picture [237 x 47] intentionally omitted <==**

- Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm 

- Instant samples with Time Machine II and Field Programmable Oscillators 

- RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free 

- For AEC-Q100 oscillators, refer to SiT8924 and SiT8925 

## **Electrical Characteristics** 

All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. 

## **Table 1. Electrical Characteristics** 

|**Parameters**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|||**Frequency Range **|||||
|**Output Frequency Range**|f|52 standard frequencies between<br>3.57 MHz and 77.76 MHz|||MHz|Refer toTable 13for the exact list of supported frequencies|
|||**Frequency Stability and Aging**|||||
|**Frequency Stability**|F_stab|-20|–|+20|ppm|Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,<br>and variations over operating temperature, rated power<br>supply voltage and load.|
|||-25|–|+25|ppm||
|||-50|–|+50|ppm||
|||**Operating Temperature Range **|||||
|**Operating Temperature Range**|T_use|-20|–|+70|°C|Extended Commercial|
|||-40|–|+85|°C|Industrial|
|||**Supply Voltage and Current Consumption**|||||
|**Supply Voltage**|Vdd|1.62|1.8|1.98|V|ContactSiTimefor 1.5V support|
|||2.25|2.5|2.75|V||
|||2.52|2.8|3.08|V||
|||2.7|3.0|3.3|V||
|||2.97|3.3|3.63|V||
|||2.25|–|3.63|V||
|**Current Consumption**|Idd|–|3.8|4.5|mA|No load condition,f = 20 MHz,Vdd = 2.8V to 3.3V|
|||–|3.7|4.2|mA|No load condition,f = 20 MHz,Vdd = 2.5V|
|||–|3.5|4.1|mA|No load condition,f = 20 MHz,Vdd = 1.8V|
|**OE Disable Current**|I_OD|–|–|4.2|mA|Vdd = 2.5V to 3.3V,OE = GND,Output in high-Z state|
|||–|–|4.0|mA|Vdd = 1.8 V. OE = GND,Output in high-Z state|
|**Standby Current**|I_std|–|2.6|4.3|A|ST<br>= GND,Vdd = 2.8V to 3.3V,Output is weakly pulled down|
|||–|1.4|2.5|A|ST<br>= GND,Vdd = 2.5V,Output is weakly pulled down|
|||–|0.6|1.3|A|ST<br>= GND,Vdd = 1.8V,Output is weakly pulled down|
||||**LVCMOS Output Characteristics**||||
|**Duty Cycle**|DC|45|–|55|%|All Vdds. See DutyCycle definition inFigure 3andFootnote 6|
|**Rise/Fall Time**|Tr, Tf|–|1|2|ns|Vdd = 2.5V,2.8V,3.0V or 3.3V,20% - 80%|
|||–|1.3|2.5|ns|Vdd =1.8V,20% - 80%|
|||–|–|2|ns|Vdd = 2.25V - 3.63V,20% - 80%|
|**Output High Voltage**|VOH|90%|–|–|Vdd|IOH = -4 mA (Vdd = 3.0V or 3.3V)<br>IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)<br>IOH = -2 mA(Vdd = 1.8V)|
|**Output Low Voltage**|VOL|–|–|10%|Vdd|IOL = 4 mA (Vdd = 3.0V or 3.3V)<br>IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)<br>IOL = 2 mA (Vdd = 1.8V)|



Rev 1.04 

January 30, 2018 

www.sitime.com 

**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Table 1. Electrical Characteristics (continued)** 

|**Parameters**<br>**Symbol**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>**Condition**|||
|---|---|---|
|**Input Characteristics**<br>**Input High Voltage **<br>VIH<br>70%<br>–<br>–<br>Vdd<br>Pin 1,OE or ST<br>̅  ̅ ̅<br>**Input Low Voltage **<br>VIL<br>–<br>–<br>30%<br>Vdd<br>Pin 1,OE or ST<br>̅  ̅ ̅<br>**Input Pull-up Impedance**<br>Z_in<br>50<br>87<br>150<br>k<br>Pin 1,OE logic high or logic low,or ST<br>̅  ̅ ̅   logic high<br>2<br>–<br>–<br>M<br>Pin 1,ST<br>̅  ̅ ̅   logic low<br>**Startup and Resume Timing**<br>**Startup Time**<br>T_start<br>–<br>–<br>5<br>ms<br>Measured from the time Vdd reaches its rated minimum value<br>**Enable/Disable Time**<br>T_oe<br>–<br>–<br>138<br>ns<br>f=77.76 MHz. For other frequencies, T_oe=100 ns + 3*<br>**Resume Time**<br>T_resume<br>–<br>–<br>5<br>ms<br>Measured from the time ST<br> ̅ ̅ ̅pin crosses 50% threshold<br>**Jitter**<br>~~P|~~<br>~~RR~~<br>~~I~~<br>~~(O~~<br>~~GN~~<br>~~I I (Of~~<br>~~Pf Rf~~<br>~~e~~~~**e** ee~~<br>~~ee~~<br>~~OOOO~~<br>~~oor e n ee~~<br>~~eww~~<br>~~sD~~<br>~~I ODQO (RO~~<br>~~DP orrr—(—ts—“‘“<~w~~<br>~~Rs nD~~<br>~~nD UD(OD (RR (RO~~<br>~~ooo~~|||
|**RMS Period Jitter**<br>T_jitt<br>–<br>1.8<br>3<br>ps<br>f=75 MHz, Vdd=2.5V, 2.8V, 3.0V or 3.3V<br>–<br>1.8<br>3<br>ps<br>f=75 MHz, Vdd=1.8V<br>**Peak-to-peak Period Jitter**<br>T_pk<br>–<br>12<br>25<br>ps<br>f=75 MHz, Vdd=2.5V, 2.8V, 3.0V or 3.3V<br>–<br>14<br>30<br>ps<br>f=75 MHz, Vdd=1.8V<br>**RMS Phase Jitter (random)**<br>T_phj<br>–<br>0.5<br>0.9<br>ps<br>f=75 MHz, Integration bandwidth=900 kHz to 7.5 MHz<br>–<br>1.3<br>2<br>ps<br>f=75 MHz, Integration bandwidth=12 kHz to 20 MHz<br>~~SSO~~<br>~~Re nnn~~~~**D**~~<br>~~ee~~<br>~~e~~~~**e**r e~~~~**es** ~~~~**e**ee es~~<br>~~s~~<br>~~sS~~<br>~~———————————————~~<br>~~es~~<br>~~esSd ns~~|||
|**Table 2. Pin Description**<br>**Pin**<br>**Symbol**<br>**Functionality**<br>1<br>OE/ST<br>̅  ̅ ̅  /NC<br>Output Enable<br>H[1]: specified frequency output<br>L: output is high impedance. Onlyoutput driver is disabled.<br>Standby<br>H[1]: specified frequency output<br>L: output is low (weak pull down). Device goes to sleep mode. Supply<br>current reduces to I_std.<br>No Connect<br>Any voltage between 0 and Vdd or Open[1]: Specified frequency<br>output. Pin 1 has no function.<br>2<br>GND<br>Power<br>Electrical ground<br>3<br>OUT<br>Output<br>Oscillator output<br>4<br>VDD<br>Power<br>Power supply voltage[2]<br>**Top View**<br>**Figure 1. Pin Assignments**<br> <br>OE/ST/NC<br>GND<br>OUT<br>VDD<br>~~|~~|||
|**Notes:**|||
|1. In OE or ST<br>̅  ̅ ̅   mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.||̅  ̅ ̅   mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.|



2. A capacitor of value 0.1 µF or higher between Vdd and GND is required. 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Table 3. Absolute Maximum Limits** 

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. 

|**Parameter**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|
|**Storage Temperature**|-65|150|°C|
|**Vdd**|-0.5|4|V|
|**Electrostatic Discharge**|–|2000|V|
|**Soldering Temperature (follow standard Pb free**<br>**soldering guidelines)**|–|260|°C|
|**Junction Temperature[3]**|–|150|°C|



## **Note:** 

3. Exceeding this temperature for extended period of time may damage the device. 

## **Table 4. Thermal Consideration[[4]]** 

||**JA, 4 Layer Board**|**JA, 2 Layer Board**|**JC, Bottom**|
|---|---|---|---|
|**Package**||||
||**(°C/W)**|**(°C/W)**|**(°C/W)**|
|||||
|7050|142|273|30|
|5032|97|199|24|
|3225|109|212|27|
|2520|117|222|26|
|2016|152|252|36|



## **Note:** 

4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. 

## **Table 5. Maximum Operating Junction Temperature[[5]]** 

|**Max Operating Temperature (ambient)**|**Maximum Operating Junction Temperature**|
|---|---|
|70°C|80°C|
|85°C|95°C|
|**Note:**<br>5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction te<br>**Table 6. Environmental Compliance**||
|**Parameter**|**Condition/Test Method**|
|**Mechanical Shock**|**MIL-STD-883F, Method 2002**|
|**Mechanical Vibration**|**MIL-STD-883F, Method 2007**|
|**Temperature Cycle**|**JESD22, Method A104**|
|**Solderability**|**MIL-STD-883F, Method 2003**|
|**Moisture Sensitivity Level**|**MSL1 @ 260°C**|



## **Note:** 

5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. 

## **Table 6. Environmental Compliance** 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Test Circuit and Waveform[[6] ]** 

**==> picture [222 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vdd Vout<br>Test Point<br>4 3<br>Power<br>Supply  0.1 uF 15pF<br>1 2 (including probe<br>and fixture<br>capacitance)<br>Vdd<br>OE/ST Function 1 kΩ<br>**----- End of picture text -----**<br>


**==> picture [150 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
tr tf<br>80% Vdd<br>50%<br>20% Vdd<br>High Pulse Low Pulse<br>(TH) (TL)<br>Period<br>**----- End of picture text -----**<br>


**Figure 2. Test Circuit** 

**Figure 3. Waveform** 

## **Note:** 

6. Duty Cycle is computed as Duty Cycle = TH/Period. 

## **Timing Diagrams** 

**==> picture [421 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
90% Vdd Vdd Vdd<br>50% Vdd<br>Pin 4 Voltage T_start No Glitch [7] ST Voltage T_resume<br>during start up<br>CLK Output<br>CLK Output HZ<br>HZ<br>sol l ss s<br>T_start: Time to start from power-off  T_resume: Time to resume from ST<br>**----- End of picture text -----**<br>


**Figure 4. Startup Timing (OE/ ST ̅  ̅ ̅  Mode)** 

**Figure 5. Standby Resume Timing ( ST ̅  ̅ ̅  Mode Only)** 

**==> picture [411 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vdd Vdd<br>50% Vdd<br>OE Voltage<br>T_oe 50% Vdd<br>OE Voltage<br>T_oe<br>CLK Output CLK Output<br>HZ<br>HZ<br>ex ml lllil We.<br>T_oe: Time to re-enable the clock output  T_oe: Time to put the output in High Z mode<br>**----- End of picture text -----**<br>


**Figure 6. OE Enable Timing (OE Mode Only)** 

**Figure 7. OE Disable Timing (OE Mode Only)** 

## **Note:** 

7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume. 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Performance Plots[[8]]** 

**==> picture [206 x 307] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8   2.5     2.8     3.0  3.3<br>5.2<br>5.0 eeeee<br>4.8<br>4.64.4 eea eeee ee Pe ee<br>4.2<br>4.0<br>3.8<br>3.6<br>3.4 | pte<br>3.2 [ern<br>3.0<br>0 a 10 20 30 40  50 60 70  80<br>Frequency (MHz)<br> Figure 8. Idd vs Frequency<br>4.0 3.5  TT flO<br>3.0<br>Pp | | | fl<br>2.5<br>Pp<br>2.0<br>1.5 1.0  ae ee<br>0.5<br>0.0<br>: 10  20  30  40  50  60  70  80<br>)(pser<br>tt<br> period ji<br>MS<br>R<br>(mA)<br>Idd<br>**----- End of picture text -----**<br>


**Figure 10. RMS Period Jitter vs Frequency** 

**==> picture [203 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1.8 V   2.5 V   2.8 V   3.0 V   3.3 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-40  -15  10  35  60  85<br>Rise time (ns)<br>**----- End of picture text -----**<br>


**Figure 12. 20%-80% Rise Time vs Temperature** 

**==> picture [191 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
DUT1  DUT2  DUT3  DUT4  DUT5<br>DUT6  DUT7  DUT8  DUT9  DUT10<br>20<br>15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>-20<br>-40  -20  0  20  40  60  80<br>Frequency (ppm)<br>**----- End of picture text -----**<br>


**Figure 9. Frequency vs Temperature** 

**==> picture [203 x 309] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 V   2.5 V     2.8 V    3.0 V   3.3 V<br>55<br>54<br>aeee<br>53<br>52  eee ee<br>51<br>eeeeee<br>50<br>49<br>48<br>ee ee eee<br>47  ee<br>46  ee ee eeeee<br>45  ee<br>° 10  20  30  40  50  60  70  80<br>Frequency (MHz)<br>Figure 11. Duty Cycle vs Frequency<br> 1.8 V   2.5 V   2.8 V   3.0 V   3.3 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-40  -15  10  35  60  85<br>ycle (%)<br>c<br>ty<br>Du<br>Fall time (ns)<br>**----- End of picture text -----**<br>


**Figure 13. 20%-80% Fall Time vs Temperature** 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Performance Plots[[8]]** 

**==> picture [204 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1.8 V    2.5 V     2.8 V     3.0 V   3.3  V<br>2.0<br>1.8<br>1.6<br>1.4  a<br>1.2<br>1.0<br>10 20 30  40 50  60  70 80<br>IPJ (ps)<br>**----- End of picture text -----**<br>


**==> picture [202 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1.8 V    2.5 V     2.8 V      3.0 V   3.3  V<br>0.9<br>0.8<br>0.7<br>0.6 ‘<br>0.5<br>0.4<br>10 20 30  40 50  60 70 80<br>(ps)<br>IPJ<br>**----- End of picture text -----**<br>


**Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[[9]]** 

**Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[[9]]** 

## **Notes:** 

8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 

9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz. 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Programmable Drive Strength** 

The SiT1602 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: 

- Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time 

- Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. 

- Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. 

For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section. 

## **EMI Reduction by Slowing Rise/Fall Time** 

Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 

**==> picture [239 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
trise=0.05<br>t rise=0.1<br>10 trise=0.15<br>t rise=0.2<br>0 trise=0.25<br>t rise=0.3<br>-10 trise=0.35<br>-20 | — - : ttrise=0.45 rise=0.4<br>-30<br>-40<br>je<br>-50<br>-60<br>-70<br>-80<br>1 3 5 7 9 11<br>Harmonic number<br>Figure 16. Harmonic EMI reduction as a Function<br>of Slower Rise/Fall Time<br>Harmonic amplitude (dB)<br>**----- End of picture text -----**<br>


## **Jitter Reduction with Faster Rise/Fall Time** 

Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. 

## **High Output Load Capability** 

The SiT1602 can support up to 60 pF or higher in maximum capacitive loads with drive strength settings. Refer to the Rise/Fall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. 

## **SiT1602 Drive Strength Selection** 

Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 

**1.** Select the table that matches the SiT1602 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 

**2.** Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 

**3.** Under the capacitive load column, select the desired rise/fall times. 

**4.** The left-most column represents the part number code for the corresponding drive strength. 

**5.** Add the drive strength code to the part number for ordering purposes. 

## **Calculating Maximum Frequency** 

Any given rise/fall time in Table 7 through 11 dictates the maximum frequency under which the oscillator can operate with guaranteed full output swing over the entire operating temperature range. This max frequency can be calculated as the following: 

**==> picture [122 x 23] intentionally omitted <==**

where Trf_20/80 is the typical value for 20%-80% rise/fall time. 

## **Example 1** 

Calculate fMAX for the following condition: 

- Vdd = 1.8V (Table 7) 

- Capacitive Load: 30 pF 

- Desired Tr/f time = 3 ns (rise/fall time part number code = E) 

- fMAX = 66.666660 

Part number for the above example: 

SiT1602BI **E** 12-18E-66.666660 

Drive strength code is inserted here. Default setting is “-” 

The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT1602 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT1602. 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Rise/Fall Time (20% to 80%) vs CLOAD Tables** 

**Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD** 

||**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|||
|---|---|---|---|---|---|
|Drive Strength \ CLOAD|5 pF|15 pF|30 pF|45 pF|60 pF|
|L|6.16|11.61|22.00|31.27|39.91|
|A|3.19|6.35|11.00|16.01|21.52|
|R|2.11|4.31|7.65|10.77|14.47|
|B|1.65|3.23|5.79|8.18|11.08|
|T|0.93|1.91|3.32|4.66|6.48|
|E|0.78|1.66|2.94|4.09|5.74|
|U|0.70|1.48|2.64|3.68|5.09|
|F or "‐": default|0.65|1.30|2.40|3.35|4.56|



## **Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD** 

||**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|||
|---|---|---|---|---|---|
|Drive Strength \ CLOAD|5pF|15pF|30pF|45pF|60pF|
|L|3.77|7.54|12.28|19.57|25.27|
|A|1.94|3.90|7.03|10.24|13.34|
|R|1.29|2.57|4.72|7.01|9.06|
|B|0.97|2.00|3.54|5.43|6.93|
|T|0.55|1.12|2.08|3.22|4.08|
|E or "‐": default|0.44|1.00|1.83|2.82|3.67|
|U|0.34|0.88|1.64|2.52|3.30|
|F|0.29|0.81|1.48|2.29|2.99|



## **Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD** 

||**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|||
|---|---|---|---|---|---|
|Drive Strength \ CLOAD|5 pF|15 pF|30 pF|45 pF|60 pF|
|L|4.13|8.25|12.82|21.45|27.79|
|A|2.11|4.27|7.64|11.20|14.49|
|R|1.45|2.81|5.16|7.65|9.88|
|B|1.09|2.20|3.88|5.86|7.57|
|T|0.62|1.28|2.27|3.51|4.45|
|E or "‐": default|0.54|1.00|2.01|3.10|4.01|
|U|0.43|0.96|1.81|2.79|3.65|
|F|0.34|0.88|1.64|2.54|3.32|



## **Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD** 

||**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|||
|---|---|---|---|---|---|
|Drive Strength \ CLOAD|5 pF|15 pF|30 pF|45 pF|60 pF|
|L|3.60|7.21|11.97|18.74|24.30|
|A|1.84|3.71|6.72|9.86|12.68|
|R|1.22|2.46|4.54|6.76|8.62|
|B|0.89|1.92|3.39|5.20|6.64|
|T or "‐": default|0.51|1.00|1.97|3.07|3.90|
|E|0.38|0.92|1.72|2.71|3.51|
|U|0.30|0.83|1.55|2.40|3.13|
|F|0.27|0.76|1.39|2.16|2.85|



## **Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD** 

||**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|**Rise/Fall Time Typ (ns)**|||
|---|---|---|---|---|---|
|Drive Strength \ CLOAD|5 pF|15 pF|30 pF|45 pF|60 pF|
|L|3.39|6.88|11.63|17.56|23.59|
|A|1.74|3.50|6.38|8.98|12.19|
|R|1.16|2.33|4.29|6.04|8.34|
|B|0.81|1.82|3.22|4.52|6.33|
|T or "‐": default|0.46|1.00|1.86|2.60|3.84|
|E|0.33|0.87|1.64|2.30|3.35|
|U|0.28|0.79|1.46|2.05|2.93|
|F|0.25|0.72|1.31|1.83|2.61|



Page 8 of 17 

Rev 1.04 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Pin 1 Configuration Options (OE,   ̅  ̅ ̅  ST , or NC)** 

Pin 1 of the SiT1602 can be factory-programmed to support three modes: Output Enable (OE), Standby (  ̅  ̅ ̅  ST ) or No Connect (NC). These modes can also be programmed with the Time Machine using field programmable devices. 

## **Output Enable (OE) Mode** 

In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1 µs. 

## **Standby (ST  ̅  ̅ ̅  ) Mode** 

In the   ̅  ̅ ̅  ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few µA. When ̅  ̅ ̅  ST is pulled High, the device goes through the “resume” process, which can take up to 5 ms. 

## **No Connect (NC) Mode** 

In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 1. 

Table 12 below summarizes the key relevant parameters in the operation of the device in OE,   ̅  ̅ ̅  ST , or NC mode. 

## **Table 12. OE vs.   ̅  ̅ ̅  ST vs. NC** 

||**OE**|**ST**<br>**̅  ̅ ̅**|**NC**|
|---|---|---|---|
|Active current 20 MHz(max,1.8V)|4.1 mA|4.1 mA|4.1 mA|
|OE disable current(max. 1.8V)|4 mA|N/A|N/A|
|Standbycurrent(typical 1.8V)|N/A|0.6µA|N/A|
|OE enable time at 77.76 MHz(max)|138 ns|N/A|N/A|
|Resume time from standby<br>(max, all frequency)|N/A|5 ms|N/A|
|Output driver in OE disable/standby<br>mode|High Z|weak<br>pull-down|N/A|



## **Output on Startup and Resume** 

The SiT1602 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. 

**Figure 17. Startup Waveform vs. Vdd (Zoomed-in View of Figure 17)** 

## **Instant Samples with Time Machine and Field Programmable Oscillators** 

SiTime supports a field programmable version of the SiT1602 low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT1602 package sizes and can be configured to one’s exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. 

## **Customizable Features of the SiT1602 FP Devices Include** 

- 52 standard frequencies between 3.75 MHz and 77.76 MHz (Refer to the frequency list on page 12) 

- Three frequency stability options, ±20 ppm, ±25 ppm, ±50 ppm 

- Two operating temperatures, -20 to 70°C or -40 to 85°C 

- Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V and 2.25 to 3.65V continuous 

- Output drive strength 

- OE, ST  ̅  ̅ ̅   or NC mode 

For more information regarding SiTime’s field programmable solutions, see Time Machine II and Field Programmable Oscillators. 

SiT1602 is typically factory-programmed per customer ordering codes for volume delivery. 

In addition, the SiT1602 features “no runt” pulses and “no glitch” output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18. 

**==> picture [151 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Startup Waveform vs. Vdd<br>Vdd<br>Clock Output<br>**----- End of picture text -----**<br>


**Figure 18. Startup Waveform vs. Vdd** 

Page 9 of 17 

> [Rev 1.04] 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Dimensions and Patterns** 

**==> picture [504 x 598] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Size – Dimensions (Unit: mm) [[10]] Recommended Land Pattern (Unit: mm) [[11]]<br>2.0 x 1.6 x 0.75 mm<br>2.5 x 2.0 x 0.75 mm<br>2.5  ± 0.05 1 .9<br>1. 00<br>#4 #3 #3 #4<br>YXXXX<br>#1 #2 #2 #1<br>0.75<br>1.1<br>0.75 ± 0.05<br>3.2 x 2.5 x 0.75 mm<br>3.2  ± 0.05 2.1 2 .2<br>#4 #3 #3 #4<br>YXXXX<br>#1 #2 #2 #1<br>0.9<br>1 .4<br>0.75 ± 0.05<br>5.0 x 3.2 x 0.75 mm<br>2 . 54<br>5.0  ± 0.05 2. 39<br>#4 #3 #3 #4<br>YXXXX<br>#1 #2 #2 #1<br>1.15<br>0.75 ± 0.05 1 . 5<br>0.05 1<br>1.<br>5<br>2.0 ±  0.5 1.<br>1.0<br>0.05<br>0.9 .9<br>1<br>2.5 ±<br>0.7<br>1.2<br>0.8<br>0.05 2<br>3.2 ±  1.1 2.<br>1.6<br>**----- End of picture text -----**<br>


Page 10 of 17 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Dimensions and Patterns** 

**==> picture [505 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Size – Dimensions (Unit: mm) [[10]] Recommended Land Pattern (Unit: mm) [[11]]<br>7.0 x 5.0 x 0.90 mm<br>7.0 ± 0.05 5.08 5. 08<br>YXXXX<br>1.4<br>2 .2<br>0.90 ± 0.10<br>2.6 1<br>5.0 ± 0.05    3.8<br>1.1<br>2.0<br>**----- End of picture text -----**<br>


## **Notes:** 

10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 

11. A capacitor of value 0.1 µF or higher between Vdd and GND is required. 

Page 11 of 17 

> [Rev 1.04] 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Ordering Information** 

**The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator.** 

## - - - SiT1602BC 12 18E 66.666660D 

**==> picture [343 x 269] intentionally omitted <==**

**----- Start of picture text -----**<br>
Packaging<br>“D”: 8 mm Tape & Reel, 3ku reel<br>Part Family  “T”: 12/16 mm Tape & Reel, 3ku reel<br>“SiT1602”  “Y”: 12/16 mm Tape & Reel, 1ku reel<br>“E”: 8 mm Tape & Reel, 1ku reel<br>Blank for Bulk<br>Revision Letter<br>“B” is the revision<br>Frequency<br>Refer to frequency list below<br>Temperature Range<br>“C” Commercial, -20 to 70ºC  Feature Pin<br>“I”  Industrial, -40 to 85ºC  “E” for Output Enable<br>“S” for Standby<br>Output Drive Strength  “N” for No Connect<br>“–” Default (datasheet limits)<br>See Tables 7 to 11 for  Supply Voltage<br>rise/fall times<br>“18” for 1.8V ±10%<br>“L”  “T”  “25” for 2.5V ±10%<br>“A”  “E”  “28” for 2.8V ±10%<br>“R”  “U”  “30” for 3.0V ±10%<br>“B”  “F”  “33” for 3.3V ±10%<br>“XX” for 2.5V -10% to 3.3V +10%<br>Package Size<br>“7”   2.0 x 1.6 mm  Frequency Stability<br>“1”   2.5 x 2.0 mm  “1” for ±20 ppm<br>“2”   3.2 x 2.5 mm  “2” for ±25 ppm<br>“3”   5.0 x 3.2 mm  “3” for ±50 ppm<br>“8”   7.0 x 5.0 mm<br>**----- End of picture text -----**<br>


## **Table 13. List of Supported Frequencies** 

|3.57 MHz|4 MHz|4.096 MHz|6 MHz|7.3728 MHz|8.192 MHz|10 MHz|12 MHz|14 MHz|
|---|---|---|---|---|---|---|---|---|
|18.432 MHz|19.2 MHz|20 MHz|24 MHz|24.576 MHz|25 MHz|25.000625 MHz 26 MHz|25.000625 MHz 26 MHz|27 MHz|
|28.6363 MHz|30 MHz|31.25 MHz|32.768 MHz|33 MHz|33.3 MHz|33.33 MHz|33.333 MHz|33.3333 MHz|
|33.33333 MHz|35.84 MHz|37.5 MHz|38 MHz|38.4 MHz|40 MHz|40.5 MHz|48 MHz|50 MHz|
|54 MHz|60 MHz|62.5 MHz|65 MHz|66 MHz|66.6 MHz|66.66 MHz|66.666 MHz|66.6666 MHz|
|66.66666 MHz|72 MHz|74.175824 MHz 74.176 MHz|74.175824 MHz 74.176 MHz|74.25 MHz|75 MHz|77.76 MHz|||



**Table 14. Ordering Codes for Supported Tape & Reel Packing Method** 

|**Device Size**<br>**(mm x mm)**|**16 mm T&R (3ku)**|**16 mm T&R (1ku)**|**12 mm T&R (3ku)**|**12 mm T&R (1ku)**|**8 mm T&R (3ku)**|**8 mm T&R (1ku)**|
|---|---|---|---|---|---|---|
|2.0 x 1.6|–|–|–|–|D|E|
|2.5 x 2.0|–|–|–|–|D|E|
|3.2 x 2.5|–|–|–|–|D|E|
|5.0 x 3.2|–|–|T|Y|–|–|
|7.0 x 5.0|T|Y|–|–|–|–|



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> [Rev 1.04] 

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**SiT1602B** Low Power, Standard Frequency Oscillator 

## **Table 15. Additional Information** 

|**Document**|**Description**|**Download Link**|
|---|---|---|
|**Time Machine II**|MEMS oscillator programmer|http://www.sitime.com/support/time-machine-oscillator-programmer|
|**Field Programmable**<br>**Oscillators**|Devices that can be programmable in the field by<br>Time Machine II|http://www.sitime.com/products/field-programmable-oscillators|
|**Manufacturing Notes**|Tape & Reel dimension, reflow profile and other<br>manufacturing related info|http://www.sitime.com/manufacturing-notes|
|**Qualification Reports**|RoHS report, reliability reports, composition reports|http://www.sitime.com/support/quality-and-reliability|
|**Performance Reports**|Additional performance data such as phase noise,<br>current consumption and jitter for selected frequencies|http://www.sitime.com/support/performance-measurement-report|
|**Termination Techniques**|Termination design recommendations|http://www.sitime.com/support/application-notes|
|**Layout Techniques**|Layout recommendations|http://www.sitime.com/support/application-notes|



## **Table 16. Revision History** 

|**Revision**|**Release Date**|**Change Summary**|
|---|---|---|
|0.9|04/01/2014|Preliminary|
|1.0|05/14/2014|Removed preliminary<br>Updated max spec for current consumption and OE disable current<br>Updated the maximum operating junction temperature<br>Updated the current consumption and OE disable current in Table 12<br>Updated performance plots 8 and 10<br>Revised the formula for calculatingthe max frequencywith different rise/fall time options|
|1.01|05/07/2015|Added 20 MHz to the frequency selection<br>Revised the Electrical Characteristics, Timing Diagrams and Performance Plots<br>Revised 2016 PKG diagram|
|1.02|06/18/2015|Added 16 mm T&R information to Table 14<br>Revised 12 mm T&R information to Table 14|
|1.03|08/30/2016|Revised part number example in the ordering information|
|1.04|01/30/2018|Updated logo and company address, other page layout changes<br>Revised2520 packageland pattern|



**SiTime Corporation** , 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | **Phone:** +1-408-328-4400 | **Fax:** +1-408-328-4439 

> © SiTime Corporation 2014-2018. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 

> **Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. 

## CRITICAL USE EXCLUSION POLICY 

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. 

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. 

Page 13 of 17 

> [Rev 1.04] 

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**Silicon MEMS Outperforms Quartz** 

## **Supplemental Information** 

The Supplemental Information section is not part of the datasheet and is for informational purposes only. 

Rev 1.04 

Page 14 of 17 

www.sitime.com 

**Silicon MEMS Outperforms Quartz** 

## **Best Reliability** 

Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. 

## **Why is SiTime MEMS Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability 

## **Best Electro Magnetic Susceptibility (EMS)** 

SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. 

## **Why is SiTime Best in Class:** 

   - Internal differential architecture for best common mode noise rejection 

   - Electrostatically driven MEMS resonator is more immune to EMS 

- World-class MEMS and CMOS design expertise 

**==> picture [215 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
Reliability (Million Hours)<br>SiTime 1,140<br>IDT 38<br>EPSN 28<br>**----- End of picture text -----**<br>


**==> picture [197 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
KYCA EPSN TXC CW SLAB SiTime<br>**----- End of picture text -----**<br>


**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]** 

**Figure 1. Reliability Comparison[[1]]** 

## **Best Aging** 

Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. 

## **Why is SiTime Best in Class:** 

- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability 

## **Best Power Supply Noise Rejection** 

SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. 

## **Why is SiTime Best in Class:** 

- On-chip regulators and internal differential architecture for common mode noise rejection 

- MEMS resonator is paired with advanced analog CMOS IC 

**==> picture [111 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SiTime o- EPSN a KYCA<br>**----- End of picture text -----**<br>


- Inherently better immunity of electrostatically driven MEMS resonator 

**==> picture [353 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
MEMS vs. Quartz Aging i)<br>o<br>. EpiSeal MEMS OscillatorSiTime Oscillator . Quartz OscillatorQuartz Oscillator<br>10<br>8 0 25a.ee<br>8 10<br>6<br>4 3.5<br>3<br>2 1.5<br>0 ae<br>1-Year 10-Year<br>**----- End of picture text -----**<br>


**Figure 4. Power Supply Noise Rejection[[4]]** 

**Figure 2. Aging Comparison[[2]]** 

Rev 1.04 

Page 15 of 17 

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**Silicon MEMS Outperforms Quartz** 

## **Best Vibration Robustness** 

High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

**==> picture [205 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
a TXC -_ EPS ae CW o- KYCAKYCA +o SLAB o EpiSeal MEMSSiTime<br>100.0<br>10.0 s<br>1.0<br>0.1<br>0.0<br>10 100 1000<br>Vibration Frequency (Hz)<br>Vibration Sensitivity (ppb/g)<br>**----- End of picture text -----**<br>


**Figure 5. Vibration Robustness[[5]]** 

## **Best Shock Robustness** 

SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. 

## **Why is SiTime Best in Class:** 

- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz 

- Center-anchored MEMS resonator is the most robust design 

**==> picture [191 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
KYCA EPSN TXC CW SLAB SiTime<br>**----- End of picture text -----**<br>


**Figure 6. Shock Robustness[[6]]** 

## **Figure labels:** 

- TXC = TXC 

- Epson = EPSN 

- Connor Winfield = CW 

- Kyocera = KYCA 

- SiLabs = SLAB 

- SiTime = EpiSeal MEMS 

Rev 1.04 

Page 16 of 17 

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## **Silicon MEMS Outperforms Quartz** 

## **Notes:** 

1. Data source: Reliability documents of named companies. 

2. Data source: SiTime and quartz oscillator devices datasheets. 

3. Test conditions for Electro Magnetic Susceptibility (EMS): 

   - According to IEC EN61000-4.3 (Electromagnetic compatibility standard) 

   - Field strength: 3V/m 

   - Radiated signal modulation: AM 1 kHz at 80% depth 

   - Carrier frequency scan: 80 MHz – 1 GHz in 1% steps 

   - Antenna polarization: Vertical 

   - DUT position: Center aligned to antenna 

## **Devices used in this test:** 

|**Devices used in this test:**||||
|---|---|---|---|
|**Label**|**Manufacturer**|**Part Number**|**Technology**|
|EpiSeal MEMS|SiTime|SiT9120AC-1D2-33E156.250000|MEMS + PLL|
|EPSN|Epson|EG-2102CA156.2500M-PHPAL3|Quartz, SAW|
|TXC|TXC|BB-156.250MBE-T|Quartz, 3rdOvertone|
|CW|Conner Winfield|P123-156.25M|Quartz, 3rdOvertone|
|KYCA|AVX Kyocera|KC7050T156.250P30E00|Quartz, SAW|
|SLAB|SiLab|590AB-BDG|Quartz, 3rdOvertone + PLL|
|0 mV pk-pk Sinusoidal voltage.<br>**Devices used in this test:**||||
|**Label**|**Manufacturer**|**Part Number**|**Technology**|
|EpiSeal MEMS|SiTime|SiT8208AI-33-33E-25.000000|MEMS + PLL|
|NDK|NDK|NZ2523SB-25.6M|Quartz|
|KYCA|AVX Kyocera|KC2016B25M0C1GE00|Quartz|
|EPSN|Epson|SG-310SCF-25M0-MB3|Quartz|



4. 50 mV pk-pk Sinusoidal voltage. 

5. Devices used in this test: 

   - same as EMS test stated in Note 3. 

6. Test conditions for shock test: 

   - MIL-STD-883F Method 2002 

   - Condition A: half sine wave shock pulse, 500-g, 1ms 

   - Continuous frequency measurement in 100 μs gate time for 10 seconds 

   - **Devices used in this test:** 

same as EMS test stated in Note 3. 

7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com. 

Rev 1.04 

Page 17 of 17 

www.sitime.com 



## Links

- [View this product on Novapart](https://novapart.co/products/SIT1602AI-22-33E-25.000000G/mems-oscillator-25-mhz-smd-32mm-x-25mm-ppm-33-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/sitime/sit1602ai-22-33e-25-000000g/mems-oscillator-25mhz-smd-3-2mmx2/dp/2850386RL)
---

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