# TCXO, 32.768 kHz, 10 ppm, SMD, 1.5mm x 0.8mm, LVCMOS, SIT1552 Series
**URL**: https://novapart.co/products/SIT1552AI-JF-DCC-32.768D/tcxo-32768-khz-10-ppm-smd-15mm-x-08mm-lvcmos
**SKU**: SIT1552AI-JF-DCC-32.768D
**Manufacturer**: SITIME
**Category**: Crystals & Oscillators || Oscillators || Temperature Compensated - TCXO Oscillators
**Price**: €0.7140
**Stock**: 10+
**Lead Time**: 92 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Bis(a,a-dimethylbenzyl) peroxide (27-Jun-2024) |
| Frequency Nom | 32.768kHz |
| Product Range | SIT1552 Series |
| Supply Voltage Nom | - |
| Frequency Stability + / - | 10ppm |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -40°C |
| Oscillator Case / Package | SMD, 1.5mm x 0.8mm |
| Oscillator Output Compatibility | LVCMOS |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4127029/)
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Features**
- 32.768 kHz ±5, ±10, ±20 ppm frequency stability options over temp
- World’s smallest TCXO in a 1.5 x 0.8 mm CSP
- Operating temperature ranges: ▪ 0°C to +70°C
## **Applications**
- Smart Meters (AMR)
- Health and Wellness Monitors
- Pulse-per-Second (pps) Timekeeping
- RTC Reference Clock
- -40°C to +85°C
- Ultra-low power: <1 µA
- Vdd supply range: 1.5 V to 3.63 V
- Improved stability reduces system power with fewer network timekeeping updates
- Internal filtering eliminates external Vdd bypass cap and saves space
- Pb-free, RoHS and REACH compliant
## **Electrical Specifications**
## **Table 1. Electrical Characteristics**
|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
|**Frequency and Stability**|||||||
|**Output Frequency**|Fout|32.768|||kHz||
|**Frequency Stability Over**
**Temperature[1]**
**(without Initial Offset[2])**|F_stab|-5.0||5.0|ppm|Stability part number code = E|
|||-10||10||Stability part number code = F|
|||-20||20||Stability part number code = 1|
|**Frequency Stability Over**
**Temperature**
**(with Initial Offset [2])**|F_stab|-10||10|ppm|Stability part number code = E|
|||-13||13||Stability part number code = F|
|||-22||22||Stability part number code = 1|
|**Frequency Stability vs Voltage**|F_vdd|-0.75||0.75|ppm|1.8 V ±10%|
|||-1.5||1.5|ppm|1.5 V – 3.63 V|
|**First Year Frequency Aging**|F_aging|-1.0||1.0|ppm|TA= 25°C, Vdd = 3.3 V|
|**Jitter Performance (TA = over temp)**|||||||
|**Long Term Jitter**||||2.5|µspp|81920 cycles (2.5 sec), 100 samples|
|**Period Jitter**|||35||nsRMS|Cycles = 10,000, TA = 25°C, Vdd = 1.5 V – 3.63 V|
|**Supply Voltage and Current Consumption**|||||||
|**Operating Supply Voltage**|Vdd|1.5||3.63|V|TA= -40°C to +85°C|
|**Core Supply Current [3]**|Idd||0.99||μA|TA= 25°C, Vdd = 1.8 V, LVCMOS Output configuration, No Load|
|||||1.52||TA= -40°C to +85°C, Vdd = 1.5 V – 3.63 V, No Load|
|**Power-Supply Ramp**|t_Vdd_
Ramp|||100|ms|Vdd Ramp-Up 0 to 90% Vdd, TA= -40°C to +85°C|
|**Start-up Time at Power-up**|t_start||180|300|ms|TA= -40°C +60°C, valid output|
|||||350||TA= +60°C to +70°C, valid output|
|||||380||TA= +70°C to +85°C, valid output|
## **Notes:**
1. No board level underfill. Measured as peak-to-peak/2. Inclusive of 3x-reflow and ±20% load variation. Tested with Agilent 53132A frequency counter. Due to the low operating frequency, the gate time must be ≥100 ms to ensure an accurate frequency measurement.
2. Initial offset is defined as the frequency deviation from the ideal 32.768 kHz at room temperature, post reflow.
3. Core operating current does not include output driver operating current or load current. To derive total operating current (no load), add core operating current + output driver operating current, which is a function of the output voltage swing. See the description titled Calculating Load Current.
Rev 1.41
November 23, 2020
www.sitime.com
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
**Table 1. Electrical Characteristics (continued)**
|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
||||**Operating Temperature Range**||||
|**Commercial Temperature**|Op_Temp|0||70|°C||
|**Industrial Temperature**||-40||85|°C||
||||**LVCMOS Output**||||
|**Output Rise/Fall Time**|tr, tf||100|200|ns|10-90% (Vdd), 15 pF Load|
|||||50||10-90% (Vdd), 5 pF Load, Vdd ≥ 1.62 V|
|**Output Clock Duty Cycle**|DC|48||52|%||
|**Output Voltage High**|VOH|90%|||V|Vdd: 1.5 V – 3.63 V. IOH= -1 μA, 15 pF Load|
|**Output Voltage Low**|VOL|||10%|V|Vdd: 1.5 V – 3.63 V. IOL= 1 μA, 15 pF Load|
|||**NanoDrive™ Programmable,**|||**Reduced Swing Output**||
|**Output Rise/Fall Time**|tf, tf|||200|ns|30-70% (VOL/VOH), 10 pF Load|
|**Output Clock Duty Cycle**|DC|48||52|%||
|**AC-coupled Programmable**
**Output Swing**|V_sw||0.20 to
0.80||V|SiT1552 does not internally AC-couple. This output description
is intended for a receiver that is AC-coupled. SeeTable 4for
acceptable NanoDrive swing options.
Vdd: 1.5 V – 3.63 V, 10 pF Load, IOH/ IOL= ±0.2 μA|
|**DC-Biased Programmable**
**Output Voltage High Range**|VOH||0.60 to
1.225||V|Vdd: 1.5 V – 3.63 V. IOH= -0.2 μA, 10 pF Load. SeeTable 4for
acceptable VOH/VOL setting levels.|
|**DC-Biased Programmable**
**Output Voltage Low Range**|VOL||0.35 to
0.80||V|Vdd: 1.5 V – 3.63 V. IOL= 0.2 μA, 10 pF Load. SeeTable 4for
acceptable VOH/VOLsetting levels.|
|**Programmable Output**
**Voltage Swing Tolerance**||-0.055||0.055|V|TA= -40°C to +85°C, Vdd = 1.5 V to 3.63 V|
## **Table 2. Pin Configuration**
|**CSP Pin**|**Symbol**|**I/O**|**Functionality**|**CSP Package (Top View)**
GND
Vdd
CLK Out
GND
1
4
2
3
**Figure 1. Pin Assignments**|
|---|---|---|---|---|
|1, 4|GND|Power
Supply
Ground|Connect to ground. All GND pins must be connected to power supply
ground. The GND pins can be connected together, as long as both GND
pins are connected ground.||
|2|CLK Out|OUT|Oscillator clock output. When interfacing to an MCU’s XTAL, the CLK Out
is typically connected to the receiving IC’s X IN pin. The SIT1552 oscillator
output includes an internal driver. As a result, the output swing and
operation is not dependent on capacitive loading. This makes the output
much more flexible, layout independent, and robust under changing
environmental and manufacturing conditions.||
|3|Vdd|Power
Supply|Connect to power supply 1.5 V ≤ Vdd ≤ 3.63 V. Under normal operating
conditions, Vdd does not require external bypass/decoupling capacitor(s).
For more information about the internal power-supply filtering,
seePower-Supply Noise Immunity section in the detailed description.
ContactSiTimefor applications that require a wider operating supply
voltage range.||
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Rev 1.41
www.sitime.com
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **System Block Diagram**
**==> picture [314 x 144] intentionally omitted <==**
**----- Start of picture text -----**
MEMS Resonator
GND Control Regulators Vdd
Temp Temp-to-Digital NVM
Control
Prog
Ultra-low
GND Sustaining Power Divider Driver CLK Out
Amp Frac-n
PLL
**----- End of picture text -----**
**Figure 2. SiT1552 Block Diagram**
## **Table 3. Absolute Maximum Limits**
Attempted operation outside the absolute maximum ratings cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
|**Parameter**|**Test Condition**|**Value**|**Unit**|
|---|---|---|---|
|**Continuous Power Supply Voltage Range (Vdd)**||-0.5 to 3.63|V|
|**Short Duration Maximum Power Supply Voltage (Vdd)**|≤30 minutes|4.0|V|
|**Continuous Maximum Operating Temperature Range**|Vdd = 1.5V - 3.63V|105|°C|
|**Short Duration Maximum Operating Temperature Range**|Vdd = 1.5V - 3.63V, ≤30 mins|125|°C|
|**Human Body Model(HBM) ESD Protection**|JESD22-A114|3000|V|
|**Charge-Device Model(CDM) ESD Protection**|JESD22- C101|750|V|
|**Machine Model(MM) ESD Protection**|JESD22- A115|300|V|
|**Latch-up Tolerance**|JESD78|Compliant||
|**Mechanical Shock Resistance**|Mil 883,Method 2002|10,000|_g_|
|**Mechanical Vibration Resistance**|Mil 883,Method 2007|70|_g_|
|**1508 CSP Junction Temperature**||150|°C|
|**Storage Temperature**||-65°C to 150°C||
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Rev 1.41
www.sitime.com
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Description**
The SiT1552 is an ultra-small and ultra-low power 32.768 kHz TCXO optimized for battery-powered applications. SiTime’s silicon MEMS technology enables the first 32 kHz TCXO in the world’s smallest footprint and chip-scale packaging (CSP). Typical core supply current is only 1 µA.
SiTime’s MEMS oscillators consist of MEMS resonators and a programmable analog circuit. Our MEMS resonators are built with SiTime’s unique MEMS First[®] process. A key manufacturing step is EpiSeal[®] during which the MEMS resonator is annealed with temperatures over 1000°C. EpiSeal creates an extremely strong, clean, vacuum chamber that encapsulates the MEMS resonator and ensures the best performance and reliability. During EpiSeal, a poly silicon cap is grown on top of the resonator cavity, which eliminates the need for additional cap wafers or other exotic packaging. As a result, SiTime’s MEMS resonator die can be used like any other semiconductor die. One unique result of SiTime’s MEMS First and EpiSeal manufacturing processes is the capability to integrate SiTime’s MEMS die with a SOC, ASIC, microprocessor or analog die within a package to eliminate external timing components and provide a highly integrated, smaller, cheaper solution to the customer.
## **TCXO Frequency Stability**
The SiT1552 is factory calibrated (trimmed) over multiple temperature points to guarantee extremely tight stability over temperature. Unlike quartz crystals that have a classic tuning fork parabola temperature curve with a 25°C turnover point with a 0.04 ppm/C2 temperature coefficient, the SiT1552 temperature coefficient is calibrated and corrected over temperature with an active temperature correction circuit. The result is 32 kHz TCXO with extremely tight frequency variation over the -40°C to +85°C temperature range. Contact SiTime for applications that require a wider supply voltage range >3.63 V, or lower operating frequency below 32 kHz.
When measuring the SiT1552 output frequency with a frequency counter, it is important to make sure the counter's gate time is >100 ms. The slow frequency of a 32 kHz clock will give false readings with faster gate times.
## **Power Supply Noise Immunity**
In addition to eliminating external output load capacitors common with standard XTALs, this device includes special power supply filtering and thus, eliminates the need for an external Vdd bypass-decoupling capacitor to keep the footprint as small as possible. Internal power supply filtering is designed to reject more than ±150 mV noise and frequency components from low frequency to more than 10 MHz.
## **Start-up and Steady-State Supply Current**
The SiT1552 TCXO starts-up to a valid output frequency within 300 ms (180 mstyp). To ensure the device starts-up within the specified limit, make sure the power-supply ramps-up in approximately 10 – 20 ms (to within 90% of Vdd).
During initial power-up, the SiT1552 power-cycles internal blocks, as shown in the power-supply start-up and steady state plot in the Typical Operating Curves section. Power-up and initialization is typically 200 ms, and during that time, the peak supply current reaches 28 µA as the internal capacitors are charged, then sequentially drops to its 990 nA steady-state current. During steady-state operation, the internal temperature compensation circuit turns on every 350 ms for a duration of approximately 10 ms.
## **Output Voltage**
The SiT1552 has two output voltage options. One option is a standard LVCMOS output swing. The second option is the NanoDrive reduced swing output. Output swing is customer specific and programmed between 200 mV and 800 mV. For DC-coupled applications, output VOH and VOL are individually factory programmed to the customers’ requirement. VOH programming range is between 600 mV and 1.225 V in 100 mV increments. Similarly, VOL programming range is between 350 mV and 800 mV. For example; a PMIC or MCU is internally 1.8V logic compatible, and requires a 1.2 V VIH and a 0.6 V VIL. Simply select SiT1552 NanoDrive factory programming code to be “D14” and the correct output thresholds will match the downstream PMIC or MCU input requirements. Interface logic will vary by manufacturer and we recommend that you review the input voltage requirements for the input interface.
For DC-biased NanoDrive output configuration, the minimum VOL is limited to 350 mV and the maximum allowable swing (VOH - VOL) is 750 mV. For example, 1.1V VOH and 400 mV VOL is acceptable, but 1.2 V VOH and 400 mV VOL is not acceptable.
When the output is interfacing to an XTAL input that is internally AC-coupled, the SiT1552 output can be factory programmed to match the input swing requirements. For example, if a PMIC or MCU input is internally AC-coupled and requires an 800 mV swing, then simply choose the SiT1552 NanoDrive programming code “AA8” in the part number. It is important to note that the SiT1552 does not include internal AC-coupling capacitors. Please see the Part Number Ordering section at the end of the datasheet for more information about the part number ordering scheme.
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Rev 1.41
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**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **SiT1552 NanoDrive[™]**
Figure 3 shows a typical output waveform of the SiT1552 (into a 10 pF load) when factory programmed for a 0.70 V swing and DC bias (VOH/VOL) for 1.8 V logic:
## **Example:**
**==> picture [188 x 194] intentionally omitted <==**
**----- Start of picture text -----**
◼ NanoDrive [™] part number coding: D14 .
VOH = 1.1 V, VOL = 0.4 V (V_sw = 0.70 V)
[2] ew |
VOH = 1.1 V
|
VSW = 0.7 V
Tt
VOL = 0.4 V
Figure 3. SiT1552AI-JE-D14-32.768
Output Waveform (10 pF load)
**----- End of picture text -----**
## **SiT1552 Full Swing LVCMOS Output**
The SiT1552 can be factory programmed to generate fullswing LVCMOS levels. Figure 4 shows the typical waveform (Vdd = 1.8V) at room temperature into a 15 pF load.
## **Example:**
- LVCMOS output part number coding is always **DCC**
- ◼ Example part number: SiT1552AI-JE- **DCC** -32.768 a a oe —_
**Figure 4. LVCMOS Waveform** (Vdd = 1.8 V) into 15 pF Load
Table 4 shows the supported NanoDrive[™] VOH, VOL factory programming options.
**Table 4. Acceptable VOH/VOL NanoDrive[™] Levels**
|**NanoDrive**|**VOH(V)**|**VOL(V)**|**Swing (mV)**|**Comments**|
|---|---|---|---|---|
|D26|1.2|0.6|600 ±55|1.8V logic compatible|
|D14|1.1|0.4|700 ±55|1.8V logic compatible|
|D74|0.7|0.4|300 ±55|XTAL compatible|
|AA3|n/a|n/a|300 ±55|XTAL compatible|
The values listed in Table 4 are nominal values at 25°C and will exhibit a tolerance of ±55 mV across Vdd and -40°C to 85°C operating temperature range.
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Rev 1.41
www.sitime.com
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Calculating Load Current**
## **No Load Supply Current**
When calculating no-load power for the SiT1552, the core and output driver components need to be added. Since the output voltage swing can be programmed to minimize load current, the output driver current is variable. Therefore, no-load operating supply current is broken into two sections; core and output driver. The equation is as follows:
Total Supply Current (no load) = Idd Core + Idd Output Driver
## **Example 1: Full-swing LVCMOS**
- Vdd = 1.8 V
- Idd Core = 990 nA (typ)
- Voutpp = 1.8 V
- Idd Output Driver: (Cdriver)(Vout)(Fout) = (3.5 pF)(1.8 V)(32768 Hz) = 206 nA
- Supply Current = 990 nA + 206 nA = 1.2 µA
## **Example 2: NanoDrive[™] Reduced Swing**
- Vdd = 1.8 V
- Idd Core = 990 nA (typ)
- Voutpp (D14) = VOH – VOL = 1.1 V - 0.4 V = 700 mV
- Idd Output Driver: (Cdriver)(Vout)(Fout) = (3.5 pF)(0.7 V)(32768 Hz) = 80 nA
## **Total Supply Current with Load**
To calculate the total supply current, including the load, follow the equation listed below.
Total Current = Idd Core + Idd Output Driver + Load Current
## **Example 1: Full-swing LVCMOS**
- Vdd = 1.8 V
- Idd Core = 990 nA
- Load Capacitance = 10 pF
- Idd Output Driver: (Cdriver)(Vout)(Fout) = (3.5 pF)(1.8 V)(32768 Hz) = 206 nA
Load Current: (10 pF)(1.8 V)(32768 Hz) = 590 nA
Total Current = 990 nA + 206 nA + 590 nA = 1.79 µA
## **Example 2: NanoDrive[™] Reduced Swing**
- Vdd = 1.8 V
- Idd Core = 990 nA
- Load Capacitance = 10 pF
- Voutpp (D14): VOH – VOL = 1.1 V - 0.4 V = 700 mV
- Idd Output Driver: (Cdriver)(Vout)(Fout) = (3.5 pF)(0.7 V)(32768 Hz) = 80 nA
Load Current: (10 pF)(0.7 V)(32.768 kHz) = 229 nA
Total Current = 990 nA + 80 nA + 229 nA = 1.299 µA
Supply Current = 990 nA + 80 nA = 1.07 µA
Page 6 of 12
Rev 1.41
www.sitime.com
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Typical Operating Curves**
## **(TA = 25°C, Vdd = 1.8 V, unless otherwise stated)**
**==> picture [137 x 321] intentionally omitted <==**
**----- Start of picture text -----**
78 Post 3x-reflow5 ppm Option (E)
200 units
wenn e enn n eee n enn e ene n eee e eee e eee
5
2.5
<= __
es ee
o—————
6
75
19
0 -20 0 25 50
Temperature (°C)
Temperature (Post-Reflow)
100
80 Vdd = 3.63 V
bS———
Vdd = 1.5 – 1.8 V
40
20
0
40 -20 0 20 40
Temperature (°C)
Frequency Stability (PPM)
Output Stage Current (nA/Vpp)
**----- End of picture text -----**
**==> picture [42 x 19] intentionally omitted <==**
**----- Start of picture text -----**
Pre-reflow
5 ppm Option (E)
200 units
**----- End of picture text -----**
**==> picture [232 x 22] intentionally omitted <==**
**----- Start of picture text -----**
Figure 5. Frequency Stability Over Temperature
(Pre-Reflow)
**----- End of picture text -----**
**Figure 6. Frequency Stability Over Temperature (Post-Reflow)**
**==> picture [349 x 295] intentionally omitted <==**
**----- Start of picture text -----**
Vdd = 3.63 V
~i= bS———
£1
rsoi === Vdd = 1.5 – 1.8 V 40
20
0.5 0
40 -20 0 20 40 60 80 40 -20 0 20
Temperature(°C)
Figure 7. Core Current Over Temperature
1.5 r 30
28 -4+------“ Internal Caps Charging
25
Vdd = 3.63 V 20 Va Logie Start-up
1 35
eae 2 NVM Read Read
—
10
Vdd = 1.5 – 1.8 V wos Start-up Start-up
5
Steady State
0.99
05 0 200
‘40 -20 0 20 40 60 80
Temperature (°C)
A)
µ
No Load Current (
**----- End of picture text -----**
**Figure 7. Core Current Over Temperature**
**Figure 8. Output Stage Current Over Temperature**
**==> picture [167 x 80] intentionally omitted <==**
**----- Start of picture text -----**
2 NVM Read Read Temperature
Compensation (6 µA)
10 v
wos Start-up Start-up
5 350 ms
Steady State
0.99
0 200 400 600
Time from Power ON [ms]
**----- End of picture text -----**
**Figure 10. Start-up and Steady-State Current Profile**
**Figure 9. Total Supply Current Over Temperature, LVCMOS (Core + LVCMOS Output Driver, No Load)**
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**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
**==> picture [309 x 149] intentionally omitted <==**
**----- Start of picture text -----**
10
Vdd 1.8 V
oS
0mp ie DACDL KYO
Lo Vdd 3.3 V |
5
“4K 10k 100k 1M
Noise Injection Frequency (Hz)
Frequency Error (ppm)
**----- End of picture text -----**
**Figure 11. Power Supply Noise Rejection (±150 mV Noise)**
**Figure 12. Temperature Ramp Response**
**==> picture [125 x 93] intentionally omitted <==**
**----- Start of picture text -----**
VOH = 1.1 V
VSW = 0.7 V
VOL = 0.4 V
**----- End of picture text -----**
**Figure 13. NanoDrive[™] Output Waveform** (VOH = 1.1 V, VOL = 0.4 V; SiT1552AI-JE-D14-32.768)
**Figure 14. LVCMOS Output Waveform** (Vswing = 1.8 V, SiT1552AI-JE-DCC-32.768, 10 pF Load)
Page 8 of 12
Rev 1.41
www.sitime.com
**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Dimensions and Patterns**
**==> picture [158 x 488] intentionally omitted <==**
**----- Start of picture text -----**
Package Size – Dimensions (Unit: mm)
|
fl
|=
Pin 4 1!Cc CT) Pin 1 |
Bal| Body
EA
cp Boss
he dy
MEMS
Pin 3 . Pin 2Die
i)
Bottom View
Recommended Land Pattern (Unit: mm)
90.25 (4x)
NSMD pads
#4
#3
#2
#1
0.41 \C 90.35 (4x)
1.00 Soldermask
openings
(soldermask openings shown with
dashed line around NSMD pad)
Recommended 4-mil (0.1mm) stencil thickness
**----- End of picture text -----**
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Rev 1.41
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**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Manufacturing Guidelines**
- 1) No Ultrasonic Cleaning: Do not subject the SiT1552 to an ultrasonic cleaning environment. Permanent damage or long term reliability issues to the MEMS structure may occur.
- 2) Do not apply underfill to the SiT1552. The device will not meet the frequency stability specification if underfill is applied.
- 3) Reflow profile, per JESD22-A113D.
- 4) For additional manufacturing guidelines and marking /tape-reel instructions, refer to: SiTime Manufacturing Notes.
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Rev 1.41
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**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
## **Ordering Information**
Part number characters in blue represent the customer specific options. The other characters in the part number are fixed.
**==> picture [373 x 236] intentionally omitted <==**
**----- Start of picture text -----**
- - -
SiT1552AI JE DCC 32.768Q
Part Family Packaging
“SiT1552”
“S”: 8 mm Tape & Reel, 10 ku reel
“Q”: 8 mm Tape & Reel, 5 ku reel
Revision Letter “D”: 8 mm Tape & Reel, 3 ku reel
“A”: is the revision “E”: 8 mm Tape & Reel, 1 ku reel
Blank for Bulk
Samples in cut Tape & Reel strips
Temperature Range
“C”: Commercial, 0 to 70˚C
“I”: Industrial, -40 to 85˚C Output Clock Frequency (kHz)
32.768 kHz
Package Size
“J”: 1.5 mm x 0.8 mm CSP Output Voltage Setting
DCC: LVCMOS Output
Over Temperature Stability Options NanoDrive™ Reduced Swing Output
“E”: ±5 ppm Refer to Table 5 for output setting options
“F”: ±10 ppm “A”: AC-coupled signal path
“1”: ±20 ppm “D”: DC-coupled signal path
**----- End of picture text -----**
The following examples illustrate how to select the appropriate temp range and output voltage requirements:
## **Example 1: SiT1552AI-JE-DCC-32.768**
- Industrial temperature range
- CSP package
- 5 ppm frequency stability over temp
- Output swing requirements:
- a) Output frequency = 32.769 kHz
- b) “D” = DC-coupled receiver
- c) “C” = LVCMOS output swing
- d) “C” = LVCMOS output swing
## **Example 2: SiT1552AC-JF-D14-32.768**
- Commercial temperature range
- CSP package
- 10 ppm frequency stability over temp
- Output swing requirements:
- a) Output frequency = 32.769 kHz
- b) “D” = DC-coupled receiver
- c) “1” = VOH = 1.1 V
- d) “4” = VOL = 400 mV
**Table 5. Acceptable VOH/VOL NanoDrive[™] Levels[[4]]**
|**NanoDrive**|**VOH(V)**|**VOL(V)**|**Swing (mV)**|**Comments**|
|---|---|---|---|---|
|D26|1.2|0.6|600 ±55|1.8 V logic compatible|
|D14|1.1|0.4|700 ±55|1.8 V logic compatible|
|D74|0.7|0.4|300 ±55|XTAL compatible|
|AA3|n/a|n/a|300 ±55|XTAL compatible|
## **Note:**
4. If these available options do not accommodate your application, contact SiTime for other NanoDrive options.
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Rev 1.41
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**SiT1552** Smallest (1.2 mm[2] ), Ultra-Low Power, 32.768 kHz MEMS TCXO
**Table 6. Revision History**
|**Version**|**Release Date**|**Change Summary**|
|---|---|---|
|1.0|Sep 17, 2014|Rev 0.9 Preliminary to Rev 1.0 Production Release
Updated start-up time specification
Added typical operating plots
Removed SOT23 and 2012 SMD package options
Added “no underfill” in frequency stability specification condition
Added ManufacturingGuidelines section|
|1.1|Oct 14, 2014|Improved Start-up Time at Power-up spec
Added 5pF LVCMOS rise/fall time spec|
|1.2|Nov 10, 2014|Updated 5pF LVCMOS rise/fall time spec|
|1.3|Nov 12, 2015|Removed NanoDrive from EC Table and OrderingInfo|
|1.31|Jan 18, 2018|Updated SPL,page layout changes|
|1.32|Mar 15, 2018|Updated POD (Package Outline Drawing)
Updated logo and companyaddress, otherpage layout changes|
|1.4|Apr 12, 2018|Added the NanoDrive sections|
|1.41|Nov 23, 2020|Formatting, rev table date format, TempFlat MEMS logo and trademarks update
Added Q-suffix to the Orderingtable options|
## **SiTime Corporation** , 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | **Phone:** +1-408-328-4400 | **Fax:** +1-408-328-4439
> © SiTime Corporation 2014-2020. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
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## CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
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www.sitime.com
## Links
- [View this product on Novapart](https://novapart.co/products/SIT1552AI-JF-DCC-32.768D/tcxo-32768-khz-10-ppm-smd-15mm-x-08mm-lvcmos)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/sitime/sit1552ai-jf-dcc-32-768d/tcxo-32-768khz-lvcmos-1-5mm-x/dp/4127029)
---
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