# Power MOSFET, P Channel, 30 V, 50 A, 5100 µohm, PowerPAK 1212, Surface Mount

![Product image](https://novapart.co/image/farnell:3772845/)

**URL**: https://novapart.co/products/SISS27ADN-T1-GE3/power-mosfet-p-channel-30-v-50-a-5100-ohm-powerpak
**SKU**: SISS27ADN-T1-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4090
**Stock**: 1000+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | TrenchFET Gen III |
| Qualification | - |
| Power Dissipation | 57W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerPAK 1212 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 5100µohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3772845/)

**SiSS27ADN** Vishay Siliconix 

www.vishay.com 

## **P-Channel 30 V (D-S) MOSFET** 

## **FEATURES** 

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FEATURES<br>PowerPAK [®]  1212-8S<br>D • TrenchFET [®]  Gen III p-channel power MOSFET<br>D 8<br>D D6 7 . • Low thermal resistance PowerPAK [®]  package s<br>5 with small size and low 0.75 mm profile<br>• 100 % Rg and UIS tested<br>• Material categorization:<br>1 for definitions of compliance please see<br>3 S2 S www.vishay.com/doc?99912<br>1 4 S<br>@ye G APPLICATIONS S<br>Top View Bottom View<br>• Battery management in mobile devices<br>PRODUCT SUMMARY • Adapter and charger switch<br>VDS (V) -30 • Battery switch G<br>RDS(on) max. (  ) at VGS = -10 V  0.0051 • Load switch<br>RDS(on) max. (  ) at VGS = -6 V  0.0068<br>RDS(on) max. (  ) at VGS = -4.5 V  0.0081<br>Qg typ. (nC) 36.6<br>ID (A) [a, g] -50 D<br>SS Configuration Single 3 P-Channel MOSFET<br>mm<br>3.3<br>3.3<br>mm<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION** Package PowerPAK 1212-8S ~~———~~ Lead (Pb)-free and halogen-free SiSS27ADN-T1-GE3 

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|||||||||
|---|---|---|---|---|---|---|---|
|ABSOLUTE MAXIMUM RATINGS|(TA = 25 °C, unless otherwise noted)|
|PARAMETER|SYMBOL|LIMIT|UNIT|
|Drain-source voltage|VDS|-30|
|V|
|———————|Gate-source voltage|VGS|± 20|
|TC = 25 °C|-50|[ a]|
|||PO|
|Continuous drain current (TJ = xx °C)|TC = 70 °C|ID|-50|[ a]|
|TA = 25 °C|-24.3|[b, c]|
|TA = 70 °C|-19.4|[b, c]|A|
|Pulsed drain current (t = 100 μs)|IDM|-200|
|Continuous source-drain diode current|TTCA = 25 °C = 25 °C|IS|-4 -47.5|[b, c]|
|aSS|Single pulse avalanche current|L = 0.1 mH|re|IAS|ee|-25|
|Single pulse avalanche energy|EAS|31|mJ|
|—|TC = 25 °C|——|57|
|Maximum power dissipation|TC = 70 °C|PD|36|W|
|TA = 25 °C|4.8|[b, c]|
|TA = 70 °C|3.1|[b, c]|
|a|Operating|junction and storage temperature range|TJ, Tstg|-55 to +150|°C|
|_———|Soldering recommendations (peak temperature)|[d, e]|260|
|THERMAL RESISTANCE RATINGS|
|PARAMETER|SYMBOL|TYPICAL|MAXIMUM|UNIT|
|Maximum junction-to-ambient|[b, f]|t||10 s|RthJA|21|26|
|°C/W|
|Maximum junction-to-case (drain)|Steady state|RthJC|1.7|2.2|

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**Notes** 

a. Package limited. 

b. Surface mounted on 1" x 1" FR4 board. 

c. t = 10 s. 

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. 

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 63 °C/W. g. TC = 25 °C. 

S16-1833-Rev. A, 12-Sep-16 

Document Number: 75459 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSS27ADN** 

Vishay Siliconix 

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www.vishay.com 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= -250 μA|-30|-|-|V|
|VDStemperature coefficient|VDS/TJ|ID= -250 μA|-|-20.6|-|mV/°C|
|VGS(th) temperature coefficient|VGS(th)/TJ||-|5|-||
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= -250 μA|-1|-|-2.2|V|
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VDS= -30 V, VGS= 0 V|-|-|-1|μA|
|||VDS= -30 V, VGS= 0 V, TJ= 70 °C|-|-|-10||
|On-state drain currenta|ID(on)|VDS -10 V, VGS= -10 V|-30|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= -10 V, ID= -15 A|-|0.0042|0.0051||
|||VGS= -6 V, ID= -10 A|-|0.0056|0.0068||
|||VGS= -4.5 V, ID= -5 A|-|0.0067|0.0081||
|Forward transconductancea|gfs|VDS= -16 V, ID= -15 A|-|57|-|S|
|**Dynamicb**|||||||
|Input capacitance|Ciss|VDS= -15 V, VGS= 0 V, f = 1 MHz|-|4660|-|pF|
|Output capacitance|Coss||-|502|-||
|Reverse transfer capacitance|Crss||-|440|-||
|Total gate charge|Qg|VDS= -15 V, VGS= -10 V, ID= -24.3 A|-|77.5|117|nC|
|||VDS= -15 V, VGS= -4.5 V, ID= -24.3 A|-|36.6|55||
|Gate-source charge|Qgs||-|11.8|-||
|Gate-drain charge|Qgd||-|11.4|-||
|Gate resistance|Rg|f = 1 MHz|0.6|3|6||
|Turn-on delay time|td(on)|VDD= -15 V, RL= 0.77, ID -19.4 A,<br>VGEN= -4.5 V, Rg= 1|-|48|72|ns|
|Rise time|tr||-|35|42||
|Turn-off delay time|td(off)||-|38|46||
|Fall time|tf||-|22|33||
|Turn-on delay time|td(on)|VDD= -15 V, RL= 0.77, ID -19.4 A,<br>VGEN= -10 V, Rg= 1|-|12|18||
|Rise time|tr||-|18|27||
|Turn-off delay time|td(off)||-|60|75||
|Fall time|tf||-|18|27||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous source-drain diode current|IS|TC= 25 °C|-|-|-50|A|
|Pulse diode forward current|ISM||-|-|-200||
|Body diode voltage|VSD|IS= -19.4 A, VGS= 0 V|-|-0.8|-1.2|V|
|Body diode reverse recovery time|trr|IF= -19.4 A, dI/dt = 100 A/μs, TJ= 25 °C|-|40|60|ns|
|Body diode reverse recovery charge|Qrr||-|22|33|nC|
|Reverse recovery fall time|ta||-|18|-|ns|
|Reverse recovery rise time|tb||-|18|-||



## **Notes** 

a. Pulse test; pulse width  300 μs, duty cycle  2 %. 

b. Guaranteed by design, not subject to production testing. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S16-1833-Rev. A, 12-Sep-16 

Document Number: 75459 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSS27ADN** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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Axis Title Axis Title<br>100 10000 80 10000<br>VGS = 10 V thru 5 V<br>80<br>60<br>VGS = 4 V 1000 1000<br>60<br>40<br>40<br>100 TC = 25 °C 100<br>20<br>20<br>VGS = 3 V TC = 125 °C TC = -55 °C<br>0 10 0 10<br>0 0.5 1 1.5 0 1 2 3 4 5<br>VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)<br>2nd line 2nd line<br>Output Characteristics Transfer Characteristics<br>Axis Title Axis Title<br>0.010 10000 6000 10000<br>5000 Ciss<br>0.008<br>VGS = 4.5 V 1000 4000 1000<br>VGS = 6 V<br>0.006 3000<br>VGS = 10 V 100 2000 100<br>0.004 Coss<br>1000<br>Crss<br>0.002 10 0 10<br>0 20 40 60 80 100 0 5 10 15 20<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>2nd line 2nd line<br>2nd line 1st line 2nd line 2nd line 1st line 2nd line<br> - Drain Current (A)ID  - Drain Current (A)ID<br>2nd line 1st line 2nd line 2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>C - Capacitance (pF)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Drain Current and Gate Voltage** 

## **Capacitance** 

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Axis Title<br>10 10000<br>ID = -24.3 A VDS = 15 V<br>8<br>1000<br>6 VDS = 8 V<br>VDS = 24 V<br>4<br>100<br>2<br>0 10<br>0 20 40 60 80<br>Qg - Total Gate Charge (nC)<br>2nd line<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Gate Charge** 

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Axis Title<br>1.5 10000<br>VGS = 10 V, ID = 15 A<br>1.3<br>1000<br>VGS = 4.5 V, 5 A<br>1.1<br>100<br>0.9<br>VGS = 6 V, 10 A<br>0.7 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Junction Temperature** 

S16-1833-Rev. A, 12-Sep-16 

Document Number: 75459 

**3** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSS27ADN** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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Axis Title<br>100 10000<br>10<br>T J = 150 °C 1000<br>1<br>TJ = 25  ° C<br>0.1<br>100<br>0.01<br>0.001 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward Voltage** 

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Axis Title<br>0.015 10000<br>ID = 15 A<br>0.012<br>1000<br>0.009<br>TJ = 150 °C<br>0.006<br>100<br>TJ = 25 °C<br>0.003<br>0 10<br>2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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Axis Title<br>2.2 10000<br>2.0 I D = 250 μA<br>1.8 1000<br>1.6<br>1.4 100<br>1.2<br>1.0 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>2nd line<br> (V)<br>2nd line VGS(th)<br>1st line 2nd line<br>**----- End of picture text -----**<br>


**Threshold Voltage** 

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100<br>80<br>60<br>40<br>20<br>0<br>0.001  0.01  0.1  1  10  100  1000<br>Time (s)<br>Power (W)<br>**----- End of picture text -----**<br>


**Single Pulse Power, Junction-to-Ambient** 

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Axis Title<br>1000 10000<br>I DM limited<br>Limited b100 y RDS(on) (1)<br>100 μs 1000<br>10<br>1 ms<br>I D  limited 10 ms<br>1<br>100 ms 100<br>10 s, 1 s<br>0.1<br>TA = 25 °C BVDSS limited DC<br>Single pulse<br>0.01 10<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>(1) VGS > minimum VGS at which RDS(on) is specified<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operating Area, Junction-to-Ambient** 

S16-1833-Rev. A, 12-Sep-16 

Document Number: 75459 

**4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSS27ADN** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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Axis Title<br>100 10000<br>80<br>1000<br>60<br>Package limited<br>40<br>100<br>20<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Current Derating[a]** 

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Axis Title Axis Title<br>70 10000 2.4 10000<br>56<br>1.8<br>1000 1000<br>42<br>1.2<br>28<br>100 100<br>0.6<br>14<br>0 10  0 10<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>2nd line 2nd line<br>2nd line 1st line 2nd line 2nd line 1st line 2nd line<br>Power (W) Power (W)<br>**----- End of picture text -----**<br>


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Power, Junction-to-Case Power, Junction-to-Ambient<br>**----- End of picture text -----**<br>


## **Note** 

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 

S16-1833-Rev. A, 12-Sep-16 

Document Number: 75459 

**5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSS27ADN** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1<br>Duty Cycle = 0.5<br>0.2  Notes:<br>0.1  PDM<br>0.1<br>0.05  t 1<br>0.02  1. Duty Cycle, D =2. Per Unit Base = R t 2 thJA t t12 = 63 °C/W<br>3. T JM - T A  = P DM Z thJA [(t)]<br>Single Pulse  4. Surface Mounted<br>0.01<br>0.0001  0.001  0.01  0.1  1  10  100  1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.1<br>0.0001  0.001  0.01  0.1<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Normalized Thermal Transient Impedance, Junction-to-Case** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75459._ 

S16-1833-Rev. A, 12-Sep-16 

Document Number: 75459 

**6** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** Vishay Siliconix 

www.vishay.com 

## **Case Outline for PowerPAK[®] 1212-8S** 

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A<br>D Z D1<br>0.10 C<br>2 x 8 7 6 5 5 6 7 8<br>K1<br>E1<br>E<br>K<br>B<br>L<br>0.10 C b e<br>2 x 1 2 3 4 4 3 2 1<br>Pin 1 dot 0.10 M C A B<br>0.05 M C<br>0.10 C<br>A C<br>A3<br>0.08 C<br>A1<br>**----- End of picture text -----**<br>


|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**|
|A|0.67|0.75|0.83|0.026|0.030|0.033|
|A1|0.00|-|0.05|0.000|-|0.002|
|A3|0.20 ref.|||0.008 ref|||
|b|0.25|0.30|0.35|0.010|0.012|0.014|
|D|3.20|3.30|3.40|0.126|0.130|0.134|
|D1|2.15|2.25|2.35|0.085|0.089|0.093|
|E|3.20|3.30|3.40|0.126|0.130|0.134|
|E1|1.60|1.70|1.80|0.063|0.067|0.071|
|e|0.65 bsc.|||0.026 bsc.|||
|K|0.76 ref.|||0.030 ref.|||
|K1|0.41 ref.|||0.016 ref.|||
|L|0.33|0.43|0.53|0.013|0.017|0.021|
|Z|0.525 ref.|||0.021 ref.|||
|ECN: C20-0862-Rev. B, 20-Jul-2020<br>DWG: 6008|||||||



Revision: 20-Jul-2020 

Document Number: 63919 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR PowerPAK[®] 1212-8 Single** 

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0.152<br>(3.860)<br>0.039 0.068 0.010<br>(0.990) (1.725) (0.255)<br>0.016<br>(0.405)<br>0.026<br>(0.660)<br>0.025 0.030<br>(0.635) (0.760)<br>0.088 (2.235) 0.094 (2.390)<br>**----- End of picture text -----**<br>


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Return to Index<br>**----- End of picture text -----**<br>


Return to Index 

Recommended Minimum Pads Dimensions in Inches/(mm) 

Document Number: 72597 Revision: 21-Jan-08 

www.vishay.com 

7 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/SISS27ADN-T1-GE3/power-mosfet-p-channel-30-v-50-a-5100-ohm-powerpak)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/siss27adn-t1-ge3/mosfet-p-ch-30v-50a-powerpak-1212/dp/3772845)
---

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