SISH892BDN-T1-GE3

Power MOSFET, N Channel, 100 V, 20 A, 0.0304 ohm, PowerPAK 1212, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
SVHC: Lead (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Gen IV
Qualification: -
Power Dissipation: 29W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 100V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 20A
Drain Source On State Resistance: 0.0304ohm
Gate Source Threshold Voltage Max: 2.4V

Delivery and price
Units per pack	5000
Price	0.239 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026