SISH112DN-T1-GE3

Power MOSFET, N Channel, 30 V, 11.3 A, 7500 µohm, PowerPAK 1212, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 1.5W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 11.3A
Drain Source On State Resistance: 7500µohm
Gate Source Threshold Voltage Max: 1.5V

Delivery and price
Units per pack	6000
Price	0.588 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026