# Dual MOSFET, Dual N Channel, 12 V, 109 A, 0.0036 ohm

![Product image](https://novapart.co/image/farnell:4777222RL/)

**URL**: https://novapart.co/products/SISF12EDN-T1-GE3/dual-mosfet-n-channel-12-v-109-a-00036-ohm
**SKU**: SISF12EDN-T1-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2200
**Stock**: 10+
**Lead Time**: 84 days (indicative)

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4777222RL/)

**SiSF12EDN** 

www.vishay.com 

Vishay Siliconix 

## **Common Drain Dual N-Channel 12 V (S1-S2) MOSFET** 

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PowerPAK [®]  1212-8SCD<br>S1<br>S1 8<br>S2 7<br>S52 6 S1<br>S2<br>1<br>4 D32 D21 G1<br>G2<br>Top View Bottom View<br>3.3 mm 1 3.3 mm<br>**----- End of picture text -----**<br>


## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|VS1S2(V)|12|
|RS1S2(on)max. (Ω) at VGS= 4.5 V|0.0036|
|RS1S2(on)max. (Ω) at VGS= 3.8 V|0.0041|
|RS1S2(on)max. (Ω) at VGS= 2.5 V|0.0050|
|()<br>RS1S2(on)max. (Ω) at VGS= 1.8 V|0.0074|
|S1S2(on)max. () at VGS<br>Qgtyp. (nC) at VGS= 2.5 V|25|
|g<br>IS1S2(A)a|109|
|Configuration|Common drain|



## **FEATURES** 

- TrenchFET[®] Gen IV power MOSFET 

- Very low source-to-source on resistance 

- Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package 

- 100 % Rg and UIS tested 

- Optimizes circuit layout for bi-directional current flow 

- Typical ESD protection: 4500 V (HBM) 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

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S1<br>• Battery protection switch<br>• Bi-directional switch<br>G1<br>• Load switch N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

Package PowerPAK 1212-8SCD Lead (Pb)-free and halogen-free SiSF12EDN-GE3 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~CC~~<br>~~——O—“C‘“(‘#NYYYNLT~~<br>~~I~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~CC~~<br>~~——O—“C‘“(‘#NYYYNLT~~<br>~~I~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~CC~~<br>~~——O—“C‘“(‘#NYYYNLT~~<br>~~I~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~CC~~<br>~~——O—“C‘“(‘#NYYYNLT~~<br>~~I~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~CC~~<br>~~——O—“C‘“(‘#NYYYNLT~~<br>~~I~~|
|---|---|---|---|---|
|**PARAMETER**<br>~~CC~~<br><br>~~I~~||**SYMBOL**<br><br>~~I~~<br>~~I~~<br>~~I~~|**LIMIT**<br><br>~~I~~|**UNIT**<br>~~LT~~<br>~~I~~|
|Drain-source voltage<br>~~a~~<br>~~Oe~~||VS1S2<br>~~I~~<br>~~a~~<br>~~I~~<br>~~Oe~~|12<br>~~a~~<br>~~Oe~~|V<br>~~a~~<br>~~Oe~~<br>~~PO~~<br>~~——Ps~~|
|Gate-source voltage<br>~~Oe~~<br>~~|~~<br>~~as~~||VGS<br>~~I~~<br>~~Oe~~<br>~~as ——Ps~~|± 8<br>~~Oe~~<br>~~PO~~<br>~~——Ps~~||
|Continuous drain current<br>(VGS= 5 V, TJ= 150 °C)<br>~~|~~<br>~~|~~<br>~~as~~<br>~~|~~|TC= 25 °C<br>~~|~~<br>~~|~~<br>~~as~~|IS1S2<br>~~as ——Ps~~<br>~~I~~|109<br>~~PO~~<br>~~ee~~<br>~~——Ps~~|A<br>~~PO~~<br>~~ee~~<br>~~——Ps~~<br>~~PO~~<br>~~I~~<br>~~I~~|
||TC= 70 °C<br>~~|~~<br>~~|~~<br>~~as~~||87<br>~~PO~~<br>~~ee~~<br>~~——Ps~~||
||TA= 25 °C<br>~~|~~<br>~~as~~<br>~~|~~||30b, c<br>~~ee~~<br>~~——Ps~~<br>~~PO~~||
||TA= 70 °C<br>~~as~~<br>~~|~~||24b, c<br>~~——Ps~~<br>~~PO~~||
|Pulsed drain current (t = 100 μs, VGS= 5 V)<br>~~as~~<br>~~|~~<br>~~I~~||IS1S2M<br>~~as ——Ps~~<br>~~I~~<br>~~I~~<br>~~I~~|200<br>~~——Ps~~<br>~~PO~~<br>~~I~~||
|Single pulse avalanche current, L = 0.1 mH<br>~~as~~<br>~~I~~<br>~~I~~<br>~~|~~||~~as ——Ps~~<br>~~I~~<br>~~I~~<br>~~I~~<br>~~I~~<br>~~(UI~~|15<br>~~——Ps~~<br>~~I~~<br>~~I~~<br>~~UI~~||
|Single pulse avalanche energy, L = 0.1 mH<br>~~as~~<br>~~I~~<br>~~|~~||~~as ——Ps~~<br>~~I~~<br>~~I~~<br>~~(UI~~|11.25<br>~~——Ps~~<br>~~I~~<br>~~UI~~|mJ<br>~~——Ps~~<br>~~I~~|
|Maximum power dissipation<br>~~I~~<br>~~|~~<br>~~|~~<br>~~Ps~~|TC= 25 °C<br>~~I~~<br>~~|~~|PD<br>~~I~~<br>~~(UI~~<br>~~|~~|69.4<br>~~I~~<br>~~UI~~<br>~~Po~~|W<br>~~I~~<br>~~Po~~<br>~~PO~~<br>~~Pe~~|
||TC= 70 °C<br>~~|~~<br>~~|~~||44.4<br>~~UI~~<br>~~PO~~||
||TA= 25 °C<br>~~|~~||5.2b, c<br>~~PO~~||
||TA= 70 °C<br>~~|~~<br>~~|~~<br>~~Ps~~||3.3b, c<br>~~PO~~<br>~~Pe~~||
|Operatingjunction and storage temperature range<br>~~|~~<br>~~Ps~~<br>~~Oe~~||TJ, Tstg<br>~~|~~<br>~~Oe~~|-55 to +150<br>~~Pe~~<br>~~Oe~~|°C<br>~~Pe~~<br>~~Oe~~|
|Solderingrecommendations (peak temperature)c<br>~~|~~<br>~~Ps~~<br>~~Oe~~||~~|~~<br>~~Oe~~|260<br>~~Pe~~<br>~~Oe~~||



**Notes** 

a. TC = 25 °C 

b. Surface mounted on 1" x 1" FR4 board 

c. t = 10 s 

S25-0338-Rev. A, 07-Apr-2025 

Document Number: 61700 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSF12EDN** 

www.vishay.com 

Vishay Siliconix 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TYPICAL**|**MAXIMUM**|**UNIT**|
|Maximum junction-to-ambienta|t≤10 s|RthJA|19|24|°C/W|
|Maximum junction-to-case (drain)|Steady state|RthJC|1.4|1.8||



## **Note** 

a. Surface mounted on 1" x 1" FR4 board 

|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 1 mA|12|-|-|V|
|Gate-source threshold voltage|VGS(th)|VS1S2= VGS, ID= 250 μA|0.4|-|1.0||
|Gate-source leakage|IGSS|VS1S2= 0 V, VGS= ± 5 V|-|-|± 1|μA|
|||VS1S2= 0 V, VGS= ± 8 V|-|-|± 30||
|Zero gate voltage drain current|IDSS|VS1S2= 12 V, VGS= 0 V|-|-|1||
|||VS1S2= 12 V, VGS= 0 V, TJ= 70 °C|-|-|15||
|Drain-source on-state resistancea|RS1S2(on)|VGS= 4.5 V, IS1S2= 10 A|-|0.0030|0.0036|Ω|
|||VGS= 3.8 V, IS1S2= 10 A|-|0.0033|0.0041||
|||VGS= 2.5 V, IS1S2= 10 A|-|0.0039|0.0050|Ω|
|||VGS= 1.8 V, IS1S2= 10 A|-|0.0058|0.0074||
|Forward transconductancea|gfs|VS1S2= 6 V, IS1S2= 10 A|-|75|-|S|
|**Dynamicb, c**|||||||
|Input capacitance|Ciss|VDS= 6 V, VGS= 0 V, f = 1 MHz|-|5950|-|pF|
|Output capacitance|Coss||-|940|-||
|Reverse transfer capacitance|Crss||-|895|-||
|Total gate charge|Qg|VDS= 6 V, VGS= 4.5 V, ID= 10 A|-|45.5|70|nC|
|||VDS= 6 V, VGS= 2.5 V, ID= 10 A|-|25|38||
|Gate-source charge|Qgs||-|7.8|-||
|Gate-drain charge|Qgd||-|8.2|-||
|Gate resistance|Rg|f = 1 MHz|0.4|1.0|1.7|Ω|
|Turn-on delay time|td(on)|VDD= 6 V, RL= 0.6Ω, IS1S2 ≅10 A,<br>VGEN= 4.5 V, Rg= 1Ω|-|22|45|ns|
|Rise time|tr||-|197|395||
|Turn-off delay time|td(off)||-|50|100||
|Fall time|tf||-|45|90||
|**Drain-Source Body Diode Characteristicsc**|||||||
|Continuous source-drain diode current|IS1S2|TC= 25 °C|-|-|63|A|
|Pulse diode forward current|IS1S2M||-|-|200||
|Body diode reverse recovery time|trr|IF= 10 A, di/dt = 100 A/μs,<br>TJ= 25 °C|-|23|46|ns|
|Body diode reverse recovery charge|Qrr||-|12|25|nC|
|Reverse recovery fall time|ta||-|12|-|ns|
|Reverse recovery rise time|tb||-|11|-||



## **Notes** 

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 

c. Guaranteed by design, not subject to production testing 

d. On single MOSFET 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S25-0338-Rev. A, 07-Apr-2025 

Document Number: 61700 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSF12EDN** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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80<br>VGS = 4.5 V thru 3 V<br>VGS = 2.5 V<br>64<br>VGS = 2.0 V<br>48<br>32 V GS = 1.5 V<br>16<br>VGS = 1 V to 0 V<br>0<br>0 0.1 0.2 0.3 0.4 0.5<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>Axis Title<br>0.007<br>0.006 V GS = 1.8 V<br>0.005<br>VGS = 2.5 V<br>0.004<br>VGS = 3.8V<br>0.003<br>VGS = 4.5 V<br>0.002<br>0 10 20 30 40 50<br>ID - Drain Current (A)<br>On-Resistance vs. Source Current and Gate Voltage<br>Axis Title<br>4.5<br>ID = 10 A<br>3.6<br>2.7<br>1.8 V DS = 4 V, 6 V, 8 V<br>0.9<br>0<br>0 10 20 30 40 50<br>Qg - Total Gate Charge (nC)<br>Gate Charge  [a]<br> - Drain Current (A)<br>ID<br>)<br> - On-Resistance (<br>S1S2(on)<br>R<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**On-Resistance vs. Source Current and Gate Voltage** 

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125 10000<br>100<br>1000<br>75<br>50 T C  = 25 °C<br>100<br>25<br>TC = 125 °C TC = -55 °C<br>0 10<br>0 0.5 1 1.5 2 2.5<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>Axis Title<br>10 000 10000<br>Ciss<br>1000<br>1000 C oss<br>Crss 100<br>100 10<br>0 2 4 6 8 10 12<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance  [a]<br>Axis Title<br>1.6 10000<br>1.4<br>VGS = 4.5 V, 10 A<br>1000<br>1.2<br>1.0 VGS = 1.8 V, 10 A<br>100<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br> - Drain Current (A)<br>ID<br>C - Capacitance (pF)<br> - On-Resistance (Normalized)<br>S1S2(on)<br>R<br>**----- End of picture text -----**<br>


**Note** 

a. For one channel only 

S25-0338-Rev. A, 07-Apr-2025 

Document Number: 61700 

**3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSF12EDN** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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100 10000<br>10<br>1000<br>1 TJ = 150 °C TJ = -55 °C<br>T J  = 25 °C 100<br>0.1<br>0.01 10<br>0 0.2 0.4 0.6 0.8 1.0<br>VSD - Source-to-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>Axis Title<br>0.015 10000<br>ID = 10 A<br>0.012<br>1000<br>0.009<br>0.006<br>TJ = 125 °C 100<br>0.003<br>TJ = 25 °C<br>0 10<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br> - Source Current (A)<br>IS<br>)<br>2nd line<br> - On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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0.3 10000<br>0.1<br>1000<br>-0.1<br>ID = 5 mA<br>-0.3<br>100<br>-0.5<br>ID = 250 µA<br>-0.7 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>Threshold Voltage<br>Axis Title<br>500 10000<br>400<br>1000<br>300<br>200<br>100<br>100<br>0 10<br>0.0001 0.001 0.01 0.1 1<br>t - Time (s)<br> - Variance (V)<br>GS(th)<br>V<br>P - Power (W)<br>**----- End of picture text -----**<br>


**Single Pulse Power, Junction-to-Ambient** 

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1000 10000<br>IDM limited<br>100<br>100 µs<br>ID limited<br>1000<br>1 ms<br>10<br>10 ms<br>1 Limited by R DS(on) a 100 ms<br>1Sec 100<br>10Sec<br>0.1 DC<br>T A  = 25 °C, BVDSS limited<br>single pulse<br>0.01 10<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Note** 

a. VGS > minimum VGS at which RDS(on) is specified 

S25-0338-Rev. A, 07-Apr-2025 

Document Number: 61700 

**4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSF12EDN** 

Vishay Siliconix 

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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125<br>100<br>75<br>50<br>25<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating  [a]<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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85 10000<br>68<br>1000<br>51<br>34<br>100<br>17<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Power, Junction-to-Case<br>P - Power (W)<br>**----- End of picture text -----**<br>


## **Notes** 

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 

S25-0338-Rev. A, 07-Apr-2025 

Document Number: 61700 

**5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiSF12EDN** 

Vishay Siliconix 

**==> picture [77 x 10] intentionally omitted <==**

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1 10000<br>Duty cycle = 0.5<br>Notes<br>0.2 1000<br>PDM<br>0.1<br>0.1 t 1<br>0.05 1. Duty cycle, D =  t 2 t t1 2 100<br>0.02 2. Per unit base = R thJA = 63 °C/W<br>3. TJM - TA = PDMZthJA (t)<br>4. Surface mounted<br>Single pulse<br>0.01 10<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>1 10000<br>Duty cycle = 0.5<br>1000<br>0.2<br>0.1<br>0.05<br>100<br>0.02<br>Single pulse<br>0.1 10<br>0.0001 0.001 0.01 0.1<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


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Normalized Thermal Transient Impedance, Junction-to-Case<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?61700._ 

S25-0338-Rev. A, 07-Apr-2025 

Document Number: 61700 

**6** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

Document Number: 91000 

_**© 2025 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2025 

**1** 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 



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