SISF02DN-T1-GE3

Dual MOSFET, N Channel, 25 V, 25 V, 60 A, 60 A, 2700 µohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Series
Qualification: -
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 25V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 60A
Power Dissipation N Channel: 69.4W
Power Dissipation P Channel: 69.4W
Drain Source Voltage Vds N Channel: 25V
Drain Source Voltage Vds P Channel: 25V
Continuous Drain Current Id N Channel: 60A
Continuous Drain Current Id P Channel: 60A
Drain Source On State Resistance N Channel: 2700µohm
Drain Source On State Resistance P Channel: 2700µohm

Delivery and price
Units per pack	5000
Price	0.657 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 23, 2026