# Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-220AB, Through Hole ![Product image](https://novapart.co/image/farnell:2364088/) **URL**: https://novapart.co/products/SIHP33N60E-GE3/power-mosfet-n-channel-600-v-33-a-0099-ohm-to **SKU**: SIHP33N60E-GE3 **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €2.3200 **Stock**: 10+ **Lead Time**: 155 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (21-Jan-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 278W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220AB | | Drain Source Voltage Vds | 600V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 33A | | Drain Source On State Resistance | 0.099ohm | | Gate Source Threshold Voltage Max | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2364088/) **SiHP33N60E** Vishay Siliconix www.vishay.com ## **E Series Power MOSFET** **==> picture [179 x 111] intentionally omitted <==** **----- Start of picture text -----**
D
TO-220AB
G
S
D
G S
N-Channel MOSFET
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## **FEATURES** - Low figure-of-merit (FOM): Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Ultra low gate charge (Qg) **==> picture [20 x 5] intentionally omitted <==** **----- Start of picture text -----**
Available
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- Avalanche energy rated (UIS) - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - Server and telecom power supplies |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---| |VDS(V) at TJmax.|650|| |RDS(on)max. () at 25 °C|VGS= 10 V|0.099| |Qgmax. (nC)|150|| |Qgs(nC)|24|| |Qgd(nC)|42|| |Configuration|Single|| - Switch mode power supplies (SMPS) - Power factor correction power supplies (PFC) - Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting - Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ## **ORDERING INFORMATION** |Package|TO-220AB| |---|---| |Lead (Pb)-free|SiHP33N60E-E3| |Lead (Pb)-free and Halogen-free|SiHP33N60E-GE3| ~~|~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~a~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-Source Voltage VDS 600 V ~~ee~~ Gate-Source Voltage VGS ± 30 TC = 25 °C 33 Continuous Drain Current (TJ = 150 °C) VGS at 10 V ID TC = 100 °C 21 A ~~**a**~~ Pulsed Drain Current[ a] IDM 88 ~~a~~ Linear Derating Factor 2.2 W/°C ~~a~~ Single Pulse Avalanche Energy[ b] EAS 793 mJ ~~a~~ Maximum Power Dissipation PD 278 W ~~a~~ Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Voltage Slope VDS = 0 V to 80 % VDS 70 dV/dt V/ns Reverse Diode dV/dt[ d] 12 ~~i ee~~ Soldering Recommendations (Peak temperature)[ c] for 10 s 300 °C **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature. - b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25  , IAS = 7.5 A. c. 1.6 mm from case. d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S24-0062-Rev. H, 22-Jan-2024 Document Number: 91523 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiHP33N60E** www.vishay.com Vishay Siliconix |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Maximum Junction-to-Ambient|RthJA|-|62|°C/W| |Maximum Junction-to-Case (Drain)|RthJC|-|0.45|| |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||600|-|-|V| |VDSTemperature Coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.71|-|V/°C| |Gate-Source Threshold Voltage (N)|VGS(th)|VDS= VGS, ID= 250 μA||2.0|-|4.0|V| |Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA| |||VGS= ± 30 V||-|-|± 1|μA| |Zero Gate Voltage Drain Current|IDSS|VDS= 600 V, VGS= 0 V||-|-|1|μA| |||VDS= 480 V, VGS= 0 V, TJ= 125 °C||-|-|10|| |Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 16.5 A|-|0.083|0.099|| |Forward Transconductancea|gfs|VDS= 30 V, ID= 16.5 A||-|11|-|S| |**Dynamic**|||||||| |Input Capacitance|Ciss|VGS= 0 V,
VDS= 100 V,
f = 1 MHz||-|3508|-|pF| |Output Capacitance|Coss|||-|156|-|| |Reverse Transfer Capacitance|Crss|||-|6|-|| |Effective Output Capacitance, Energy
Relatedb|Co(er)|VGS= 0 V, VDS= 0 V to 480 V||-|136|-|| |Effective Output Capacitance, Time
Relatedc|Co(tr)|||-|468|-|| |Total Gate Charge|Qg|VGS= 10 V|ID= 16.5 A, VDS= 480 V|-|100|150|nC| |Gate-Source Charge|Qgs|||-|24|-|| |Gate-Drain Charge|Qgd|||-|42|-|| |Turn-On Delay Time|td(on)|VDD= 480 V, ID= 16.5 A
Rg= 9.1, VGS= 10 V||-|28|56|ns| |Rise Time|tr|||-|60|90|| |Turn-Off Delay Time|td(off)|||-|99|150|| |Fall Time|tf|||-|54|80|| |Gate Input Resistance|Rg|f = 1 MHz, open drain||0.2|0.7|1.0|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode Current|IS|MOSFET symbol
showing the
integral reverse
p - n junction diode
S
D
G||-|-|33|A| |Pulsed Diode Forward Current|ISM|||-|-|88|| |Diode Forward Voltage|VSD|TJ= 25 °C, IS= 16.5 A, VGS= 0 V||-|0.9|1.2|V| |Reverse Recovery Time|trr|TJ= 25 °C, IF= IS,
dI/dt = 100 A/μs, VR= 20 V||-|503|1006|ns| |Reverse Recovery Charge|Qrr|||-|8.5|17|μC| |Reverse Recovery Current|IRRM|||-|26|-|A| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. c. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S24-0062-Rev. H, 22-Jan-2024 Document Number: 91523 **2** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiHP33N60E** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
www.vishay.com
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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [210 x 600] intentionally omitted <==** **----- Start of picture text -----**
120 TOP 15 V
14 V13 V TJ = 25 °C
12 V
100 11 V
10 V
9.0 V
8.0 V
80 7.0 V6.0 V
BOTTOM 5.0 V
60
40
20
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
70 TOP 15 V
14 V
13 V TJ = 150 °C
60 12 V
11 V
10 V
9.0 V
50 8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
40
30
20
10
5.0 V
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
120
100
80
60
40
TJ = 150 °C
20
TJ = 25 °C
0
0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
- Drain Current (A)
ID
- Drain Current (A)
ID
, Drain-to-Source Current (A)ID
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**Fig. 3 - Typical Transfer Characteristics** **==> picture [238 x 598] intentionally omitted <==** **----- Start of picture text -----**
3.0
ID = 16.5 A
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd x Cds shorted
Crss = Cgd
10 000 Ciss Coss = Cds + Cgd
1000
100 C oss
10
Crss
1
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
5000
20
15
Coss Eoss
500
10
5
50 0
0 100 200 300 400 500 600
VDS
- On-Resistance (Normalized)
DS(on)
R
C - Capacitance (pF)
(pF) (µJ)
oss oss
C E
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**==> picture [115 x 8] intentionally omitted <==** **----- Start of picture text -----**
Fig. 6 - COSS and EOSS vs. VDS
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S24-0062-Rev. H, 22-Jan-2024 Document Number: 91523 **3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiHP33N60E** www.vishay.com Vishay Siliconix **==> picture [212 x 179] intentionally omitted <==** **----- Start of picture text -----**
24
VDS = 300 V
20
VDS = 120 V
16
VDS = 480 V
12
8
4
0
0 40 80 120 160 200
Qg - Total Gate Charge (nC)
- Gate-to-Source Voltage (V)
GS
V
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**Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage** **==> picture [217 x 179] intentionally omitted <==** **----- Start of picture text -----**
1000
100 TJ = 150 °C
10
TJ = 25 °C
1
0.1
V GS = 0 V
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
- Source Current (A)
IS
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**Fig. 8 - Typical Source-Drain Diode Forward Voltage** **==> picture [225 x 391] intentionally omitted <==** **----- Start of picture text -----**
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TC - Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
750
725
700
675
650
625
600
575
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ,Temperature (°C)
, Drain Current (A)
ID
Voltage (V)
, Drain-to -Source Breakdown
DS
V
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**Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature** **==> picture [209 x 161] intentionally omitted <==** **----- Start of picture text -----**
1000 IDM limited 10000
Operation in this area
limited by R DS(on)
100
10 0 μs
1000
Limited by R DS(on) a
10
1 ms
100
1 10 ms
TTC J = 150 = 25 °C ° C,, BVDSS limited
single pulse
0.1 10
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)
ID
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**Fig. 9 - Maximum Safe Operating Area** S24-0062-Rev. H, 22-Jan-2024 Document Number: 91523 **4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiHP33N60E** www.vishay.com Vishay Siliconix **==> picture [462 x 184] intentionally omitted <==** **----- Start of picture text -----**
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Thermal Impedance
Normalized Effective Transient
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**Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case** **==> picture [424 x 422] intentionally omitted <==** **----- Start of picture text -----**
RD VDS
VDS
t
p
VGS D.U.T. VDD
RG +- VDD VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms
VDS QG
90 % 10 V
QGS QGD
10 % VG
VGS
td(on) tr td(off) tf
Charge
Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
to obtain VDSDS 50 kΩ
12 V 0.2 µF
AS 0.3 µF
RGG D.U.T + +
- [[V][DD]][[DD]] D.U.T. - VDS
IASAS
10 V0 V VGS
tpp 0.01 ΩΩ 3 mA
IG ID
Current sampling resistors
Fig. 15 - Unclamped Inductive Test Circuit Fig. 18 - Gate Charge Test Circuit
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**==> picture [212 x 101] intentionally omitted <==** **----- Start of picture text -----**
L
VDSDS
Vary tp to obtain
required IAS
RGG D.U.T +
- [[V][DD]][[DD]]
IASAS
10 V0 V
tpp 0.01 ΩΩ
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**Fig. 15 - Unclamped Inductive Test Circuit** S24-0062-Rev. H, 22-Jan-2024 Document Number: 91523 **5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiHP33N60E** Vishay Siliconix www.vishay.com ## **Peak Diode Recovery dV/dt Test Circuit** **==> picture [284 x 463] intentionally omitted <==** **----- Start of picture text -----**
+ Circuit layout considerations
D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
- - +
Rg • dV/dt controlled by Rg +
•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD
• D.U.T. - device under test
Driver gate drive
Period D = P.W.
P.W. Period
VGS = 10 V [a]
D.U.T. lSD waveform
Reverse
recovery Body diode forward
current current dI/dt
D.U.T. VDS waveform Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
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**Fig. 19 - For N-Channel** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91523._ Document Number: 91523 S24-0062-Rev. H, 22-Jan-2024 **6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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