# Power MOSFET, N Channel, 600 V, 40 A, 0.058 ohm, PowerPAK, Surface Mount
**URL**: https://novapart.co/products/SIHK055N60EF-T1GE3/power-mosfet-n-channel-600-v-40-a-0058-ohm
**SKU**: SIHK055N60EF-T1GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.9000
**Stock**: 50+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (07-Nov-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | EF Gen IV Series |
| Qualification | - |
| Power Dissipation | 236W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerPAK |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.058ohm |
| Gate Source Threshold Voltage Max | 5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4014709RL/)
**SiHK055N60EF**
www.vishay.com
Vishay Siliconix
## **EF Series Power MOSFET With Fast Body Diode**
## **FEATURES**
**==> picture [230 x 119] intentionally omitted <==**
**----- Start of picture text -----**
PowerPAK [®] 10 x 12
Drain
tab
TAB
Gate
pin 1
Driver
source
pin 2 Source
pin 3 to 8
N-Channel MOSFET
2
8
7
6
5
4
3
1
**----- End of picture text -----**
- 4[th] generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
## **APPLICATIONS**
- Server and telecom power supplies
## **PRODUCT SUMMARY**
|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V) at TJmax.|650||
|RDS(on)typ. () at 25 °C|VGS= 10 V|0.050|
|Qgmax. (nC)|90||
|Qgs(nC)|26||
|Qgd(nC)|14||
|Configuration|Single||
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
## **ORDERING INFORMATION**
Package PowerPAK 10 x 12 Lead (Pb)-free and halogen-free SiHK055N60EF-T1GE3
|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)
~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)
~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)
~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)
~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)
~~|~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)
~~|~~|
|---|---|---|---|---|---|
|**PARAMETER**
~~SS~~
~~|~~|||**SYMBOL**|**LIMIT**
~~Pr~~|**UNIT**|
|Drain-source voltage
~~SS~~
~~|~~|||VDS|600
~~Pr~~|V|
|Gate-source voltage
~~SS~~
~~|~~|||VGS|± 30
~~Pr~~||
|Continuous drain current (TJ= 150 °C)
~~SS~~
~~jp~~|VGSat 10 V
~~|~~
~~jp~~|TC= 25 °C
~~|~~
~~jp~~|ID
~~jp~~|40
~~Pr~~
~~jp~~|A
~~jp~~
~~a~~|
|||TC= 100 °C
~~|~~
~~jp~~||26
~~Pr~~
~~jp~~||
|Pulsed drain currenta
~~jp~~
~~a~~|||IDM
~~jp~~
~~a~~|110
~~jp~~
~~a~~||
|Linear deratingfactor
~~a~~|||~~a~~|1.89
~~a~~|W/°C
~~a~~|
|Single pulse avalanche energyb
~~a~~|||EAS
~~a~~|226
~~a~~|mJ
~~a~~|
|Maximum power dissipation
~~a~~|||PD
~~a~~|236
~~a~~|W
~~a~~|
|Operatingjunction and storage temperature range
~~ee~~|||TJ, Tstg
~~ee~~|-55 to +150
~~PT~~|°C|
|Drain-source voltage slope
~~ee~~||TJ= 125 °C
~~ee~~|dv/dt
~~ee~~|100
~~PT~~|V/ns|
|Reverse diode dv/dtd
~~ee~~||||50
~~PT~~||
## **Notes**
a. Repetitive rating; pulse width limited by maximum junction temperature
- b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.0 A
- c. 1.6 mm from case
- d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
S22-0747-Rev. C, 29-Aug-2022
Document Number: 92429
**1**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHK055N60EF**
Vishay Siliconix
www.vishay.com
## **THERMAL RESISTANCE RATINGS**
|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient|RthJA|-|50c|°C/W|
|Maximum junction-to-case (drain)|RthJC|-|0.53||
|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||600|-|-|V|
|VDStemperature coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.55|-|V/°C|
|Gate-source threshold voltage (N)|VGS(th)|VDS= VGS, ID= 250 μA||3.0|-|5.0|V|
|Gate-source leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|||VGS= ± 30 V||-|-|± 1|μA|
|Zero gate voltage drain current|IDSS|VDS= 480 V, VGS= 0 V||-|-|1|μA|
|||VDS= 480 V, VGS= 0 V, TJ= 125 °C||-|-|2|mA|
|Drain-source on-state resistance|RDS(on)|VGS= 10 V|ID= 16 A|-|0.050|0.058||
|Forward transconductancea|gfs|VDS= 10 V, ID= 16 A||-|22|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,
VDS= 100 V,
f = 1 MHz||-|3667|-|pF|
|Output capacitance|Coss|||-|143|-||
|Reverse transfer capacitance|Crss|||-|5|-||
|Effective output capacitance, energy
relateda|Co(er)|VDS= 0 V to 400 V, VGS= 0 V||-|146|-||
|Effective output capacitance, time
relatedb|Co(tr)|||-|749|-||
|Totalgate charge|Qg|VGS= 10 V|ID= 16 A, VDS= 480 V|-|60|90|nC|
|Gate-source charge|Qgs|||-|26|-||
|Gate-drain charge|Qgd|||-|14|-||
|Turn-on delay time|td(on)|VDD= 480 V, ID= 16 A,
VGS= 10 V, Rg= 9.1||-|35|70|ns|
|Rise time|tr|||-|40|80||
|Turn-off delay time|td(off)|||-|56|84||
|Fall time|tf|||-|29|58||
|Gate input resistance|Rg|f = 1 MHz||0.3|0.7|1.4||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol
showing the
integral reverse
p - n junction diode
S
D
G||-|-|40|A|
|Pulsed diode forward current|ISM|||-|-|110||
|Diode forward voltage|VSD|TJ= 25 °C, IS= 16 A, VGS= 0 V||-|-|1.2|V|
|Reverse recovery time|trr|TJ= 25 °C, IF= IS= 16 A,
di/dt = 100 A/μs, VR= 400 V||-|126|252|ns|
|Reverse recovery charge|Qrr|||-|0.8|1.6|μC|
|Reverse recovery current|IRRM|||-|14|-|A|
|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||600|-|-|V|
|VDStemperature coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.55|-|V/°C|
|Gate-source threshold voltage (N)|VGS(th)|VDS= VGS, ID= 250 μA||3.0|-|5.0|V|
|Gate-source leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|||VGS= ± 30 V||-|-|± 1|μA|
|Zero gate voltage drain current|IDSS|VDS= 480 V, VGS= 0 V||-|-|1|μA|
|||VDS= 480 V, VGS= 0 V, TJ= 125 °C||-|-|2|mA|
|Drain-source on-state resistance|RDS(on)|VGS= 10 V|ID= 16 A|-|0.050|0.058||
|Forward transconductancea|gfs|VDS= 10 V, ID= 16 A||-|22|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,
VDS= 100 V,
f = 1 MHz||-|3667|-|pF|
|Output capacitance|Coss|||-|143|-||
|Reverse transfer capacitance|Crss|||-|5|-||
|Effective output capacitance, energy
relateda|Co(er)|VDS= 0 V to 400 V, VGS= 0 V||-|146|-||
|Effective output capacitance, time
relatedb|Co(tr)|||-|749|-||
|Totalgate charge|Qg|VGS= 10 V|ID= 16 A, VDS= 480 V|-|60|90|nC|
|Gate-source charge|Qgs|||-|26|-||
|Gate-drain charge|Qgd|||-|14|-||
|Turn-on delay time|td(on)|VDD= 480 V, ID= 16 A,
VGS= 10 V, Rg= 9.1||-|35|70|ns|
|Rise time|tr|||-|40|80||
|Turn-off delay time|td(off)|||-|56|84||
|Fall time|tf|||-|29|58||
|Gate input resistance|Rg|f = 1 MHz||0.3|0.7|1.4||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol
showing the
integral reverse
p - n junction diode
S
D
G||-|-|40|A|
|Pulsed diode forward current|ISM|||-|-|110||
|Diode forward voltage|VSD|TJ= 25 °C, IS= 16 A, VGS= 0 V||-|-|1.2|V|
|Reverse recovery time|trr|TJ= 25 °C, IF= IS= 16 A,
di/dt = 100 A/μs, VR= 400 V||-|126|252|ns|
|Reverse recovery charge|Qrr|||-|0.8|1.6|μC|
|Reverse recovery current|IRRM|||-|14|-|A|
## **Notes**
e. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 V to 400 V
f. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 V to 400 V
g. When mounted on 1” x 1” FR4 board
S22-0747-Rev. C, 29-Aug-2022
Document Number: 92429
**2**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHK055N60EF**
Vishay Siliconix
**==> picture [77 x 10] intentionally omitted <==**
**----- Start of picture text -----**
www.vishay.com
**----- End of picture text -----**
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
**==> picture [187 x 365] intentionally omitted <==**
**----- Start of picture text -----**
120
15 V TJ = 25 °C
14 V
13 V
8 V
90 12 V
11 V
10 V
9 V
7 V
60
30
6 V
5 V
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Axis Title
80
15 V
14 V TJ = 150 °C
13 V
60 12 V 7 V
11 V
10 V
9 V
40 6 V
20
5 V
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
- Drain-to-Source Current (A)
ID
- Drain-to-Source Current (A)
ID
**----- End of picture text -----**
**Fig. 2 - Typical Output Characteristics**
**==> picture [217 x 366] intentionally omitted <==**
**----- Start of picture text -----**
3.0 10000
I D = 16 A
2.5
2.0 1000
1.5
V GS = 10 V
1.0 100
0.5
0 10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Axis Title
100 000 10000
10 000
C iss
1000 1000
100
Coss
10 100
Crss
VGS = 0 V, f = 1 MHz
1 Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
0.1 10
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
(Normalized)
- Drain-to-Source On-Resistance
DS(on)
R
2nd line
C - Capacitance (pF)
**----- End of picture text -----**
**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage**
**==> picture [187 x 160] intentionally omitted <==**
**----- Start of picture text -----**
160
120
TJ = 25 °C
80
TJ = 150 °C
40
VDS = 20 V
0
0 5 10 15 20
VGS - Gate-to-Source Voltage (V)
- Drain-to-Source Current (A)
ID
**----- End of picture text -----**
**Fig. 3 - Typical Transfer Characteristics**
**==> picture [221 x 160] intentionally omitted <==**
**----- Start of picture text -----**
20
50 000
15
5000
C oss Eoss 10
500
5
50 0
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
- Output Capacitance (pF)
oss
C
- Output Capacitance Stored Energy (µJ)
oss
E
**----- End of picture text -----**
**Fig. 6 - Coss and Eoss vs. VDS**
S22-0747-Rev. C, 29-Aug-2022
Document Number: 92429
**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHK055N60EF**
Vishay Siliconix
## www.vishay.com
**==> picture [187 x 161] intentionally omitted <==**
**----- Start of picture text -----**
12
VDS = 480 V
VDS = 300 V
9 VDS = 120 V
6
3
0
0 20 40 60 80
Qg - Total Gate Charge (nC)
- Gate-to-Source Voltage (V)
GS
V
**----- End of picture text -----**
**Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage**
**==> picture [209 x 365] intentionally omitted <==**
**----- Start of picture text -----**
10000
100
1000
T J = 150 ° C
10
TJ = 25 °C
100
VGS = 0 V
1 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Axis Title
1000 10000
Operation in this area
limited by R DS(on)
100 IDM limited
BVDSS lim ited1000
10 Limited by RDS(on) a
10 0 µs
1
100
1 ms
0.1 TC = 25 °C,
T J = 150 °C, 10 ms
single pulse
0.01 10
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
- Reverse Drain Current (A)
ISD
- Drain Current (A)
ID
**----- End of picture text -----**
**Fig. 8 - Typical Source-Drain Diode Forward Voltage**
**==> picture [217 x 364] intentionally omitted <==**
**----- Start of picture text -----**
50 10000
40
1000
30
20
100
10
0 10
25 50 75 100 125 150
TC - Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title
1.2 10000
1.1
1000
1.0
100
0.9
I D = 20 mA
0.8 10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
2nd line
- Drain Current (A)
ID
(Normalized)
- Drain to Source Breakdown Voltage
DS
V
**----- End of picture text -----**
**Fig. 10 - Maximum Drain Current vs. Case Temperature**
**Fig. 11 - Temperature vs. Drain-to-Source Voltage**
**Fig. 9 - Maximum Safe Operating Area**
**Note**
h. VGS > minimum VGS at which RDS(on) is specified
S22-0747-Rev. C, 29-Aug-2022
Document Number: 92429
**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHK055N60EF**
Vishay Siliconix
www.vishay.com
**==> picture [460 x 160] intentionally omitted <==**
**----- Start of picture text -----**
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001 0.001 0.01 0.1 1
Pulse Time (s)
Thermal Impedance
Normalized Effective Transient
**----- End of picture text -----**
**Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case**
**==> picture [201 x 384] intentionally omitted <==**
**----- Start of picture text -----**
RD
VDS
VGS
D.U.T.
R
g +
- VDD
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
Fig. 13 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
Fig. 14 - Switching Time Waveforms
L
VDS
Vary tp to obtain
required IAS
Rg D.U.T. +
- [V][DD]
IAS
10 V
tp 0.01 Ω
**----- End of picture text -----**
**Fig. 15 - Unclamped Inductive Test Circuit**
**==> picture [149 x 238] intentionally omitted <==**
**----- Start of picture text -----**
VDS
tp
VDD
VDS
IAS
Fig. 16 - Unclamped Inductive Waveforms
Qg
10 V
Qgs Qgd
VG
Charge
**----- End of picture text -----**
**Fig. 16 - Unclamped Inductive Waveforms**
**==> picture [151 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 17 - Basic Gate Charge Waveform
**----- End of picture text -----**
**==> picture [145 x 146] intentionally omitted <==**
**----- Start of picture text -----**
Current regulator
Same type as D.U.T.
50 kΩ
12 V 0.2 μF
0.3 μF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
**----- End of picture text -----**
**Fig. 18 - Gate Charge Test Circuit**
S22-0747-Rev. C, 29-Aug-2022
Document Number: 92429
**5**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHK055N60EF**
Vishay Siliconix
**==> picture [77 x 10] intentionally omitted <==**
**----- Start of picture text -----**
www.vishay.com
**----- End of picture text -----**
**==> picture [286 x 487] intentionally omitted <==**
**----- Start of picture text -----**
Peak Diode Recovery dv/dt Test Circuit
+ Circuit layout considerations
D.U.T.
• Low stray inductance
3 • Ground plane
• Low leakage inductance
current transformer
-
+
2
- - 4 +
1
Rg • dv/dt controlled by Rg +
• Driver same type as D.U.T.• ISD controlled by duty factor “D” - VDD
• D.U.T. - device under test
1 Driver gate drive
P.W.
Period D =
P.W. Period
VGS = 10 V [a]
2 D.U.T. ISD waveform
Reverse
recovery Body diode forward
current current
di/dt
3 D.U.T. VDS waveform Diode recovery
dv/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
4
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
**----- End of picture text -----**
**Fig. 19 - For N-Channel**
_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92429._
Document Number: 92429
S22-0747-Rev. C, 29-Aug-2022
**6**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**PAD Pattern** Vishay Siliconix
www.vishay.com
## **Recommended Land Pattern PowerPAK[®] 10 x 12 (TOLL) (High Voltage)**
**==> picture [160 x 208] intentionally omitted <==**
**==> picture [262 x 286] intentionally omitted <==**
**----- Start of picture text -----**
9.90
4.30 1.30
2x 3x
0.85
1.40
6.18
12.88
8.20
3.05
0.55
2.25
1
2 [ pitch]
1.20 0.90
7x 8x
**----- End of picture text -----**
## **Note**
- Dimensions in mm
ECN: S22-1061-Rev. C, 26-Dec-2022 DWG: 3013
Revision: 26-Dec-2022
Document Number: 92489
**1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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_**© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_
Revision: 01-Jan-2023
Document Number: 91000
**1**
## Links
- [View this product on Novapart](https://novapart.co/products/SIHK055N60EF-T1GE3/power-mosfet-n-channel-600-v-40-a-0058-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/sihk055n60ef-t1ge3/mosfet-n-ch-600v-40a-powerpak/dp/4014709RL)
---
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