# Power MOSFET, N Channel, 600 V, 40 A, 0.13 ohm, Super-247, Through Hole

![Product image](https://novapart.co/image/farnell:3650274/)

**URL**: https://novapart.co/products/SIHFPS40N60K-GE3/power-mosfet-n-channel-600-v-40-a-013-ohm-super
**SKU**: SIHFPS40N60K-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.5300
**Stock**: 25+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 570W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | Super-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3650274/)

**SiHFPS40N60K** 

~~—~~ www.vishay.com 

Vishay Siliconix 

## **Power MOSFET** 

**==> picture [159 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>Super-247<br>G<br>S<br>D<br>G S<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

## **FEATURES** 

- Low gate charge Qg results in simple drive requirement 

- Improved gate, avalanche and dynamic dV/dt ruggedness 

- Fully characterized capacitance and avalanche voltage and current 

- Enhanced body diode dV/dt capability 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|600||
|RDS(on)(Ω)|VGS= 10 V|0.110|
|Qg(Max.) (nC)|330||
|Qgs(nC)|84||
|Qgd(nC)|150||
|Configuration|Single||



## **APPLICATIONS** 

- Hard switching primary or PFC switch 

- Switch mode power supply (SMPS) 

- Uninterruptible power supply 

- High speed power switching 

- Motor drive 

## **ORDERING INFORMATION** 

Package Super-247 Lead (Pb)-free and halogen-free SiHFPS40N60K-GE3 

|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~pn~~<br>~~C~~<br>~~NS~~<br>~~SS~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~pn~~<br>~~C~~<br>~~NS~~<br>~~SS~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~pn~~<br>~~C~~<br>~~NS~~<br>~~SS~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~pn~~<br>~~C~~<br>~~NS~~<br>~~SS~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~pn~~<br>~~C~~<br>~~NS~~<br>~~SS~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~pn~~<br>~~C~~<br>~~NS~~<br>~~SS~~|
|---|---|---|---|---|---|
|**PARAMETER**<br>~~pn~~<br>~~a~~<br>~~NS~~|||**SYMBOL**<br>~~pn~~<br>~~a~~<br>~~C~~|**LIMIT**<br>~~pn~~<br>~~a~~<br>~~SS~~|**UNIT**<br>~~pn~~<br>~~a~~|
|Drain-source voltage<br>~~NS~~|||VDS<br>~~C~~|600<br>~~SS~~|V<br>~~eee~~|
|Gate-source voltage<br>~~NS~~<br>~~|~~<br>~~SS~~|||VGS<br>~~C~~<br>~~p~~<br>~~eee~~|± 30<br>~~SS~~<br>~~p~~<br>~~eee~~||
|Continuous drain current<br>~~NS~~<br>~~SS~~|VGSat 10 V<br>~~NS~~<br>~~|~~|TC= 25 °C<br>~~NS~~<br>~~|~~|ID<br>~~C~~<br>~~p~~<br>~~eee~~|40<br>~~SS~~<br>~~p~~<br>~~eee~~|A<br>~~eee~~|
|||TC= 100 °C<br>~~|~~||24<br>~~p~~<br>~~eee~~||
|Pulsed drain currenta<br>~~|~~<br>~~SS~~<br>~~DO~~|||IDM<br>~~p~~<br>~~eee~~<br>~~DO~~|160<br>~~p~~<br>~~eee~~<br>~~DO~~||
|Linear derating factor<br>~~|~~<br>~~SS~~<br>~~eG~~|||~~p~~<br>~~eee~~<br>~~eG~~|4.5<br>~~p~~<br>~~eee~~<br>~~eG~~|W/°C<br>~~eee~~<br>~~eG~~|
|Single pulse avalanche energyb<br>~~|~~<br>~~SS~~<br>~~GO~~|||EAS<br>~~p~~<br>~~eee~~<br>~~GO~~|600<br>~~p~~<br>~~eee~~<br>~~GO~~|mJ<br>~~eee~~<br>~~GO~~|
|Repetitive avalanche currenta<br>~~eG~~|||IAR<br>~~eG~~|40<br>~~eG~~|A<br>~~eG~~|
|Repetitive avalanche energya<br>~~GO~~|||EAR<br>~~GO~~|57<br>~~GO~~|mJ<br>~~GO~~|
|Maximum power dissipation<br>~~GO~~|TC= 25 °C<br>~~GO~~||PD<br>~~GO~~|570<br>~~GO~~|W<br>~~GO~~|
|Peak diode recovery dV/dtc<br>~~GO~~|||dV/dt<br>~~GO~~|7.5<br>~~GO~~|V/ns<br>~~GO~~|
|Operating junction and storage temperature range<br>~~DO~~|||TJ, Tstg<br>~~DO~~|- 55 to + 150<br>~~DO~~|°C|
|Soldering recommendations (peak temperature)<br>~~a~~|for 10 s<br>~~a~~|||300d||



a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) 

b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 Ω, IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a) 

c. ISD ≤ 38 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C 

d. 1.6 mm from case 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient|RthJA|-|40|°C/W|
|Case-to-sink, flat, greased surface|RthCS|0.24|-||
|Maximum junction-to-case (drain)|RthJC|-|0.22||



S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

**1** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiHFPS40N60K** 

Vishay Siliconix 

www.vishay.com 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||600|-|-|V|
|VDStemperature coefficient|ΔVDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.63|-|V/°C|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||3.0|-|5.0|V|
|Gate-source leakage|IGSS|VGS= ± 30 V||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VDS= 600 V, VGS= 0 V||-|-|50|μA|
|||VDS= 480 V, VGS= 0 V, TJ= 125 °C||-|-|250||
|Drain-source on-state resistance|RDS(on)|VGS= 10 V|ID= 24 Ab|-|0.110|0.130|Ω|
|Forward transconductance|gfs|VDS= 50 V, ID= 24 Ab||21|-|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, see fig. 5||-|7970|-|pF|
|Output capacitance|Coss|||-|750|-||
|Reverse transfer capacitance|Crss|||-|75|-||
|Output capacitance|Coss|VGS= 0 V|VDS= 1.0 V, f = 1.0 MHz|-|9440|-||
||||VDS= 480 V, f = 1.0 MHz|-|200|-||
|Effective output capacitance|Cosseff.||VDS= 0 V to 480 Vc|-|260|-||
|Total gate charge|Qg|VGS= 10 V|ID= 38 A, VDS= 480 V,<br>see fig. 6 and 13b|-|-|330|nC|
|Gate-source charge|Qgs|||-|-|84||
|Gate-drain charge|Qgd|||-|-|150||
|Turn-on delay time|td(on)||VDD= 300 V, ID= 38 A,<br>RG= 4.3Ω, see fig. 10b|-|47|-|ns|
|Rise time|tr|||-|110|-||
|Turn-off delay time|td(off)|||-|97|-||
|Fall time|tf|||-|60|-||
|**Drain-source body diode characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|40|A|
|Pulsed diode forward currenta|ISM|||-|-|160||
|Body diode voltage|VSD|TJ= 25 °C, IS= 38 A, VGS= 0 Vb||-|-|1.5|V|
|Body diode reverse recovery time|trr|TJ= 25 °C|IF= 38 A, dI/dt = 100<br>A/μs|-|630|950|ns|
|||TJ= 125 °C||-|730|1090||
|Body diode reverse recovery charge|Qrr|TJ= 25 °C||-|14|20|μC|
|||TJ= 125 °C||-|17|25||
|Body diode recovery current|IRRM|TJ= 25 °C||-|39|58|A|
|Forward turn-on time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) 

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % 

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS 

S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiHFPS40N60K** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1000<br>VGS<br>TOP           15V<br>                   10V<br>100                    8.0V<br>                   7.0V<br>                   6.0V<br>                   5.5V<br>10                    5.0V<br>BOTTOM   4.5V<br>1<br>0.1<br>4.5V<br>0.01<br>20μs PULSE WIDTH<br>Tj = 25°C<br>0.001<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig. 1 - Typical Output Characteristics** 

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**----- Start of picture text -----**<br>
3.5<br>I D = 38A<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>V GS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (    C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


## **Fig. 4 - Normalized On-Resistance vs. Temperature** 

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**----- Start of picture text -----**<br>
100 TOP           15VVGS 100000 VGS  = 0V,       f = 1 MHZ<br>                   10V                   8.0V                    7.0V CCC iss rss  oss      = C  = C = C gs ds gd + C+ C gdgd ,   C ds     SHORTED<br>                   6.0V<br>                   5.5V 10000 Ciss<br>10                    5.0V<br>BOTTOM   4.5V<br>4.5V 1000<br>Coss<br>1<br>100<br>20μs PULSE WIDTH Crss<br>Tj = 150°C<br>0.1<br>0.1 1 10 100 10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2 - Typical Output Characteristics** 

**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** 

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**----- Start of picture text -----**<br>
 1000<br> 100 T  = 150    CJ °<br> 10<br>T  = 25   CJ °<br> 1<br>0.1<br>V      DS= 50V<br>20μs PULSE WIDTH<br>0.01<br>4 6 8 10 11 13 15<br>V     , Gate-to-Source Voltage (V)GS<br>I   ,  Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig. 3 - Typical Transfer Characteristics** 

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12<br>ID = 38A VDS =  480V<br>V DS =  300V<br>VDS =  120V<br>10<br>7<br>5<br>2<br>0<br>0 50 100 150 200 250<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** 

S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiHFPS40N60K** 

www.vishay.com 

Vishay Siliconix 

**==> picture [169 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br> 100<br>T  = 150    CJ °<br> 10<br>T  = 25   CJ °<br> 1<br>V      = 0 V GS<br>0.1<br>0.2 0.6 0.9 1.3 1.6<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig. 7 - Typical Source-Drain Diode Forward Voltage** 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>100μsec<br>10<br>1msec<br>1<br>10msec<br>Tc = 25 ° C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>1 10 100 1000 10000<br>VDS , Drain-toSource Voltage (V)<br>Drain-to-Source Current (A)<br>ID,<br>**----- End of picture text -----**<br>


**Fig. 8 - Maximum Safe Operating Area** 

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**----- Start of picture text -----**<br>
40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>T   , Case TemperatureC (    C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig. 9 - Maximum Drain Current vs. Case Temperature** 

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RD<br>VDS<br>VGS<br>D.U.T.<br>RG +- VDD<br>10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>Fig. 10a - Switching Time Test Circuit<br>VDS<br>90 %<br>10 %<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig. 10b - Switching Time Waveforms** 

S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiHFPS40N60K** 

Vishay Siliconix 

## www.vishay.com 

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**----- Start of picture text -----**<br>
 1<br>D = 0.50<br>0.1<br>0.20<br>0.10<br>0.05 P DM<br>0.01 0.020.01 (THERMAL RESPONSE) SINGLE PULSE t 1<br>t 2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1200<br>TOP<br>15 V 960 BOTTOM<br>720<br>L Driver<br>VDS<br>480<br>RG D.U.T. +<br>- [V][DD] A<br>IAS 240<br>20 V<br>tp 0.01 Ω<br>thJC<br>(Z          )<br>Thermal Response<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1200<br>I D<br>TOP 17A<br>24A<br>960 BOTTOM 38A<br>720<br>480<br>240<br>0<br>25 50 75 100 125 150<br>Starting Tj, Junction Temperature (   C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig. 12a - Unclamped Inductive Test Circuit** 

**Fig. 12c - Maximum Avalanche Energy vs. Drain Current** 

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**----- Start of picture text -----**<br>
VDS<br>t<br>p<br>IAS<br>**----- End of picture text -----**<br>


**Fig. 12b - Unclamped Inductive Waveforms** 

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5.0<br>4.5<br>4.0<br>ID = 250μA<br>3.5<br>3.0<br>2.5<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Gate threshold Voltage (V)<br>VGS(th)<br>**----- End of picture text -----**<br>


**Fig. 12d - Threshold Voltage vs. Temperature** 

S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiHFPS40N60K** 

www.vishay.com 

**==> picture [128 x 94] intentionally omitted <==**

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QG<br>VGS V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig. 13a - Basic Gate Charge Waveform** 

Vishay Siliconix 

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**----- Start of picture text -----**<br>
Current regulator<br>Same type as D.U.T.<br>50 kΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>D.U.T. - VDS<br>VGS<br>3 mA<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


**Fig. 13b - Gate Charge Test Circuit** 

S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

**6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiHFPS40N60K** 

Vishay Siliconix 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


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Peak Diode Recovery dV/dt Test Circuit<br>+ Circuit layout considerations<br>D.U.T.<br>•  Low stray inductance<br>•  Ground plane<br>•  Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg •  dV/dt controlled by Rg +<br>••   Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>•  D.U.T. - device under test<br>Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br>


**Fig. 14 - For N-Channel** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.  Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91261._ 

S21-0019-Rev. C, 18-Jan-2021 

Document Number: 91261 

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For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

www.vishay.com 

## **TO-274AA (High Voltage)** 

## **VERSION 1: FACILITY CODE = Y** 

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A<br>B E A<br>D2<br>E4 A1 E1<br>R<br>D1<br>D<br>L1<br>L Detail “A”<br>C<br>e b<br>A2<br>0.10 (0.25) M B A M<br>b2 b4<br>Lead Tip<br>Detail “A”<br>10°<br>5°<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
b2 b4<br>Detail “A”<br>Scale: 2:1<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
|**DIM.**<br>**M**|**IN.**|**MAX.**|**MIN.**|**MAX.**|
|A<br>4|.70|5.30|0.185|0.209|
|A1<br>1|.50|2.50|0.059|0.098|
|A2<br>2|.25|2.65|0.089|0.104|
|b<br>1|.30|1.60|0.051|0.063|
|b2<br>1|.80|2.20|0.071|0.087|
|b4<br>3|.00|3.25|0.118|0.128|
|c(1)<br>0|.38|0.89|0.015|0.035|
|D<br>1|9.80|20.80|0.780|0.819|



||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|D1|15.50|16.10|0.610|0.634|
|D2|0.70|1.30|0.028|0.051|
|E|15.10|16.10|0.594|0.634|
|E1|13.30|13.90|0.524|0.547|
|e|5.45 BSC||0.215 BSC||
|L|13.70|14.70|0.539|0.579|
|L1|1.00|1.60|0.039|0.063|
|R|2.00|3.00|0.079|0.118|



## **Notes** 

- Dimensioning and tolerancing per ASME Y14.5M-1994 

- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body 

- Outline conforms to JEDEC[®] outline to TO-274AA 

- (1) Dimension measured at tip of lead 

Revision: 19-Oct-2020 

Document Number: 91365 

**1** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

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## Vishay Siliconix 

## **VERSION 2: FACILITY CODE = N** 

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H H<br>b3<br>b1<br>0.25 M B A M<br>b’, b2, b4<br>Base metal<br>b, b1, b3<br>Plating<br>A A B<br>E<br>E3 A2<br>F F<br>C<br>G G<br>A1<br>e<br>3 x b<br>C E4<br>E1<br>D2<br>D1<br>D<br>L1<br>L<br>C C’<br>Q<br>E2<br>**----- End of picture text -----**<br>


SECTION "F-F", "G-G" AND "H-H" SCALE: NONE 

|||||SCALE: NON|E|E|
|---|---|---|---|---|---|---|
||**MILLIMETERS**||||**MILLIMETERS**||
|**DIM.**|**MIN.**|**MAX.**||**DIM.**|**MIN.**|**MAX.**|
|A|4.83|5.21||D1|16.25|17.65|
|A1|2.29|2.54||D2|0.50|0.80|
|A2|1.91|2.16||E|15.75|16.13|
|b’|1.07|1.28||E1|13.10|14.15|
|b|1.07|1.33||E2|3.68|5.10|
|b1|1.91|2.41||E3|1.00|1.90|
|b2|1.91|2.16||E4|12.38|13.43|
|b3|2.87|3.38||e|5.44 BSC||
|b4|2.87|3.13||N|3||
|c’|0.55|0.65||L|19.81|20.32|
|c|0.55|0.68||L1|3.70|4.00|
|D|20.80|21.10||Q|5.49|6.00|
|ECN: E20-0538-Rev. C, 19-Oct-2020<br>DWG: 5975|||||||



ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975 

## **Notes** 

- Dimensioning and tolerancing per ASME Y14.5M-1994 

- Outline conforms to JEDEC[®] outline to TO-274AD 

- Dimensions are measured in mm, angles are in degree 

- Metal surfaces are tin plated, except area of cut 

Revision: 19-Oct-2020 

Document Number: 91365 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

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_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2021 

Document Number: 91000 

**1** 



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- [View this product on Novapart](https://novapart.co/products/SIHFPS40N60K-GE3/power-mosfet-n-channel-600-v-40-a-013-ohm-super)
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---

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