# Power MOSFET, N Channel, 650 V, 15 A, 0.28 ohm, TO-263 (D2PAK), Surface Mount
**URL**: https://novapart.co/products/SIHB15N65E-GE3/power-mosfet-n-channel-650-v-15-a-028-ohm-to-263
**SKU**: SIHB15N65E-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4000
**Stock**: 10+
**Lead Time**: 36 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | E Series |
| Qualification | - |
| Power Dissipation | 34W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.28ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3929214/)
**SiHB15N65E**
~~—~~ www.vishay.com
Vishay Siliconix
## **E Series Power MOSFET**
|**PRODUCT SUMMARY**
VDS(V) at TJmax.
RDS(on)max. at 25 °C (Ω)
Qgmax. (nC)
Qgs(nC)|**PRODUCT SUMMARY**
VDS(V) at TJmax.
RDS(on)max. at 25 °C (Ω)
Qgmax. (nC)
Qgs(nC)|VGS= 10 V|= 10 V|700
= 10 V
96
11|700
= 10 V
96
11|700
= 10 V
96
11|700
= 10 V
96
11||0.28|
|---|---|---|---|---|---|---|---|---|---|
|Qgd(nC)||||21||||||
|Configuration||||Single||||||
|**D2PAK (TO-263)**|||||||D|||
|||||||||||
||||G|||||||
|G
D||||||||||
|S|||||||S|||
|||||N-Channel MOSFET||||||
## **FEATURES**
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
## **APPLICATIONS**
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
## **ORDERING INFORMATION**
Package D[2] PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB15N65E-GE3
~~eee~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~GG~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-Source Voltage VDS 650 V ~~e~~ Gate-Source Voltage ~~n~~ VGS ± 30 TC = 25 °C 15 Continuous Drain Current (TJ = 150 °C) VGS at 10 V ID TC = 100 °C 10 A ~~eea~~ Pulsed Drain Current[ a] ~~ee~~ IDM 38 ~~ee GO~~ Linear Derating Factor 1.4 W/°C ~~GO~~ Single Pulse Avalanche Energy[ b] EAS 286 mJ ~~GO~~ Maximum Power Dissipation PD 34 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Voltage Slope TJ = 125 °C 37 ~~a~~ dV/dt ~~P~~ V/ns Reverse Diode dV/dt[d] 23 ~~GG~~ Soldering Recommendations (Peak Temperature)[ c] for 10 s 300 °C **Notes**
- a. Repetitive rating; pulse width limited by maximum junction temperature.
- b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A.
- c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
## **THERMAL RESISTANCE RATINGS**
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|
|Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)|RthJA
RthJC|-
-|62
0.7|°C/W|
S15-0399-Rev. B, 16-Mar-15
Document Number: 91536
**1**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHB15N65E**
Vishay Siliconix
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||650|-|-|V|
|VDSTemperature Coefficient|ΔVDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.75|-|V/°C|
|Gate-Source Threshold Voltage (N)|VGS(th)|VDS= VGS, ID= 250 μA||2|-|4|V|
|Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|||VGS= ± 30 V||-|-|± 1|μA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 650 V, VGS= 0 V||-|-|1|μA|
|||VDS= 520 V, VGS= 0 V, TJ= 125 °C||-|-|10||
|Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 8 A|-|0.23|0.28|Ω|
|Forward Transconductance|gfs|VDS= 30 V, ID= 8 A||-|5.6|-|S|
|**Dynamic**||||||||
|Input Capacitance|Ciss|VGS= 0 V,
VDS= 100 V,
f = 1 MHz||-|1640|-|pF|
|Output Capacitance|Coss|||-|80|-||
|Reverse Transfer Capacitance|Crss|||-|4|-||
|Effective Output Capacitance, Energy
Relateda|Co(er)|VDS= 0 V to 520 V, VGS= 0 V||-|63|-||
|Effective Output Capacitance, Time
Relatedb|Co(tr)|||-|213|-||
|Total Gate Charge|Qg|VGS= 10 V|ID= 8 A, VDS= 520 V|-|48|96|nC|
|Gate-Source Charge|Qgs|||-|11|-||
|Gate-Drain Charge|Qgd|||-|21|-||
|Turn-On Delay Time|td(on)|VDD= 520 V, ID= 8 A,
VGS= 10 V, Rg= 9.1Ω||-|18|36|ns|
|Rise Time|tr|||-|24|48||
|Turn-Off Delay Time|td(off)|||-|48|96||
|Fall Time|tf|||-|25|50||
|Gate Input Resistance|Rg|f = 1 MHz, open drain||-|0.8|-|Ω|
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous Source-Drain Diode Current|IS|MOSFET symbol
showing the
integral reverse
p - n junction diode
S
D
G||-|-|15|A|
|Pulsed Diode Forward Current|ISM|||-|-|38||
|Diode Forward Voltage|VSD|TJ= 25 °C, IS= 8 A, VGS= 0 V||-|-|1.2|V|
|Reverse Recovery Time|trr|TJ= 25 °C, IF= IS= 8 A,
dI/dt = 100 A/μs, VR= 400 V||-|325|-|ns|
|Reverse Recovery Charge|Qrr|||-|4.6|-|μC|
|Reverse Recovery Current|IRRM|||-|20|-|A|
## **Notes**
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
- b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S15-0399-Rev. B, 16-Mar-15
Document Number: 91536
**2**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHB15N65E**
Vishay Siliconix
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www.vishay.com
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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
**==> picture [190 x 165] intentionally omitted <==**
**----- Start of picture text -----**
50 TOP 15 V
14 V13 V TJ = 25 °C
12 V
40 11 V
10 V
9 V
8 V
7 V
30 6 V
BOTTOM 5 V
20
10
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
, Drain-to-Source Current (A)
ID
**----- End of picture text -----**
**Fig. 1 - Typical Output Characteristics**
**==> picture [190 x 163] intentionally omitted <==**
**----- Start of picture text -----**
30
TOP 15 V
14 V TJ = 150 °C
13 V
25 12 V
11 V
10 V
9 V
20 8 V
7 V
BOTTOM 6 V
15
10
5
5 V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
, Drain-to-Source Current (A)
ID
**----- End of picture text -----**
**Fig. 2 - Typical Output Characteristics**
**==> picture [193 x 165] intentionally omitted <==**
**----- Start of picture text -----**
50
TJ = 25 °C
40
30
TJ = 150 °C
20
10
VDS = 30.8 V
0
0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
, Drain-to-Source Current (A)
ID
**----- End of picture text -----**
**Fig. 3 - Typical Transfer Characteristics**
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**----- Start of picture text -----**
3
I D = 8 A
2.5
2
1.5
1
V GS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
10 000
C iss
1000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
100 C oss CC rss oss = C= C gd ds + Cgd
10 Crss
1
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
24
VDS = 520 V
20 VDS = 325 V
VDS = 130 V
16
12
8
4
0
0 20 40 60 80 100
Qg, Total Gate Charge (nC)
, Drain-to-Source
DS(on)
R
On Resistance (Normalized)
Capacitance (pF)
, Gate-to-Source Voltage (V)
GS
V
**----- End of picture text -----**
**Fig. 4 - Normalized On-Resistance vs. Temperature**
**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage**
**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage**
S15-0399-Rev. B, 16-Mar-15
Document Number: 91536
**3**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHB15N65E**
Vishay Siliconix
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
**==> picture [206 x 368] intentionally omitted <==**
**----- Start of picture text -----**
100
TJ = 150 °C
10 TJ = 25 °C
1
V GS = 0 V
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD, Source-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
Operation in this Area
100 Limited by R DS(on) I DM = Limited
10
10 0 μs
1 Limited by RDS(on)*
1 m s
0.1 TC = 25 °C BVDSS Limited 10 ms
TJ = 150 °C
Single Pulse
0.01
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
, Reverse Drain Current (A)
ISD
, Drain Current (A)
ID
**----- End of picture text -----**
**Fig. 7 - Typical Source-Drain Diode Forward Voltage**
**==> picture [193 x 166] intentionally omitted <==**
**----- Start of picture text -----**
20
15
10
5
0
25 50 75 100 125 150
TJ, Case Temperature (°C)
, Drain Current (A)
ID
**----- End of picture text -----**
**Fig. 9 - Maximum Drain Current vs. Case Temperature**
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**----- Start of picture text -----**
800
775
750
725
700
675
650
625
600
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
, Drain-to-Source
DS
V Breakdown Voltage (V)
**----- End of picture text -----**
**Fig. 8 - Maximum Safe Operating Area**
**Fig. 10 - Temperature vs. Drain-to-Source Voltage**
**==> picture [404 x 162] intentionally omitted <==**
**----- Start of picture text -----**
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1
Pulse Time (s)
Thermal Impedance
Normalized Effective Transient
**----- End of picture text -----**
**Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case**
S15-0399-Rev. B, 16-Mar-15
Document Number: 91536
**4**
For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHB15N65E**
Vishay Siliconix
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
**==> picture [415 x 284] intentionally omitted <==**
**----- Start of picture text -----**
RD
VDS QG
10 V
VGS
D.U.T.
RG +- VDD QGS QGD
10 V VG
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
VDS
90 %
50 kΩ
12 V 0.2 µF
0.3 µF
+
10 % D.U.T. - VDS
VGS
td(on) tr td(off) tf VGS
3 mA
Fig. 13 - Switching Time Waveforms
IG ID
Current sampling resistors
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**Fig. 16 - Basic Gate Charge Waveform**
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**----- Start of picture text -----**
L
VDS
Vary tp to obtain
required IAS
RG D.U.T +
- [V][DD]
IAS
10 V
tp 0.01 Ω
**----- End of picture text -----**
**Fig. 17 - Gate Charge Test Circuit**
**Fig. 14 - Unclamped Inductive Test Circuit**
**==> picture [149 x 100] intentionally omitted <==**
**----- Start of picture text -----**
VDS
t
p
VDD
VDS
IAS
**----- End of picture text -----**
**Fig. 15 - Unclamped Inductive Waveforms**
S15-0399-Rev. B, 16-Mar-15
Document Number: 91536
**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**SiHB15N65E**
Vishay Siliconix
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**==> picture [77 x 10] intentionally omitted <==**
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www.vishay.com
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Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
- - +
Rg • dV/dt controlled by Rg +
•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD
• D.U.T. - device under test
Driver gate drive
Period D = P.W.
P.W. Period
VGS = 10 V [a]
D.U.T. lSD waveform
Reverse
recovery Body diode forward
current current dI/dt
D.U.T. VDS waveform Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
**----- End of picture text -----**
**Fig. 18 - For N-Channel**
_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91536._
S15-0399-Rev. B, 16-Mar-15
Document Number: 91536
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**Package Information**
**==> picture [60 x 50] intentionally omitted <==**
## Vishay Siliconix
## **TO-263AB (HIGH VOLTAGE)**
|L1
L2
D
4
(Datum A|L1
L2
D
4
(Datum A|L1
L2
D
(Datum A|L1
L2
D
(Datum A|)|3
|4|4|4|4|4|4|4|4|4|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||E
||||||||||
||||1||4||||||||||
||||D||1
2
C|3
C|||||||||
||||2||**B**
e||||||||||
|||||**B**|||||||||||
|||||2 x|||||||||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
|||||Lead tip||||Section B - B and C - C
Scale: none|||||||
||||||||||||||||
||||**MILLIMETERS**||||**INCHES**
**MIN.**
**MAX.**
0.160
0.190
0.000
0.010
0.020
0.039
0.020
0.035
0.045
0.070
0.045
0.068
0.015
0.029
0.015
0.023
0.045
0.065
0.330
0.380||||**MILLIMETERS**||**INCHES**||
|**DIM.**|**MIN.**||||**MA**|**X.**|**MIN.**|||**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.06||||4.8|3|0.160|||D1|6.86|-|0.270|-|
|A1|0.00||||0.2|5|0.000|||E|9.65|10.67|0.380|0.420|
|b|0.51||||0.9|9|0.020|||E1|6.22|-|0.245|-|
|b1|0.51||||0.8|9|0.020|||e|2.54 BSC||0.100 BSC||
|b2|1.14||||1.7|8|0.045|||H|14.61|15.88|0.575|0.625|
|b3|1.14||||1.7|3|0.045|||L|1.78|2.79|0.070|0.110|
|c|0.38||||0.7|4|0.015|||L1|-|1.65|-|0.066|
|c1|0.38||||0.5|8|0.015|||L2|-|1.78|-|0.070|
|c2|1.14||||1.6|5|0.045|||L3|0.25 BSC||0.010 BSC||
|D|8.38||||9.6|5|0.330|||L4|4.78|5.28|0.188|0.208|
|ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970|||||||||||||||
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970
## **Notes**
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364 Revision: 15-Sep-08
www.vishay.com
1
**AN826**
## **Vishay Siliconix**
## RECOMMENDED MINIMUM PADS FOR D[2] PAK: 3-Lead
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**----- Start of picture text -----**
0.420
(10.668)
mil
0.145
(3.683)
0.135
(3.429)
0.200 0.050
| rt
— (5.080) (1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.355 (9.017)
0.635
(16.129)
**----- End of picture text -----**
Return to Index
Document Number: 73397 11-Apr-05
www.vishay.com
**1**
**Legal Disclaimer Notice** Vishay
www.vishay.com
**==> picture [59 x 48] intentionally omitted <==**
## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
## **Material Category Policy**
**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.**
**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.**
**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.**
Revision: 02-Oct-12
Document Number: 91000
**1**
## Links
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