# Power MOSFET, N Channel, 30 V, 6 A, 0.057 ohm, PowerPAK SC-75, Surface Mount

![Product image](https://novapart.co/image/farnell:3927783/)

**URL**: https://novapart.co/products/SIB4316EDK-T1-GE3/power-mosfet-n-channel-30-v-6-a-0057-ohm-powerpak
**SKU**: SIB4316EDK-T1-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1190
**Stock**: 1000+
**Lead Time**: 344 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET Series |
| Qualification | - |
| Power Dissipation | 10W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerPAK SC-75 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.057ohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3927783/)

**SiB4316EDK** 

www.vishay.com 

Vishay Siliconix 

## **N-Channel 30 V (D-S) MOSFET** 

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PowerPAK [®]  SC-75-6L Single<br>D<br>D 6<br>S 5<br>4<br>S<br>1<br>7<br>2 D<br>3 D<br>1<br>G<br>Top View Bottom View<br>Marking Code:  AK<br>1.6 mm<br>1.6 mm<br>**----- End of picture text -----**<br>


## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|VDS (V)|30|
|RDS(on)max.(Ω)at VGS= 10 V|0.057|
|RDS(on)max.(Ω)at VGS= 4.5 V|0.062|
|RDS(on)max.(Ω)at VGS= 2.5 V|0.078|
|Qgtyp.(nC)|3.5|
|ID (A) a, c|6|
|Configuration|Single|



## **FEATURES** 

- TrenchFET[®] power MOSFET 

- Thermally enhanced PowerPAK[®] SC-70 package 

- Small footprint area 

- Low on-resistance 

- Typical ESD protection: 1500 V (HBM) 

- 100 % Rg tested 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

- D 

- • Portable devices such as smart phones, tablet PCs and mobile computing G - Load switch - DC/DC converter - Power management S 

- N-Channel MOSFET 

## **ORDERING INFORMATION** 

Package PowerPAK SC-75 

Lead (Pb)-free and halogen-free SiB4316EDK-T1-GE3 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Tn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Tn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Tn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Tn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Tn~~|
|---|---|---|---|---|
|**PARAMETER**<br>~~Ce~~||**SYMBOL**<br>|**LIMIT**<br>|**UNIT**|
|Drain-source voltage<br>~~Ce~~||VDS<br>|30<br>|V|
|Gate-source voltage<br>~~CeSS~~<br>~~Oo~~<br>~~**|**~~<br>~~|~~||VGS<br>~~SS~~<br>~~=——~~|± 12<br>~~SS~~<br>~~**PO**~~<br>~~=——~~||
|Continuous drain current (TJ= 150 °C)<br>~~SS~~<br>~~Oo~~<br>~~**|**~~<br>~~|~~<br>~~|~~|TC= 25 °C<br>~~SS~~<br>~~**|**~~<br>~~|~~|ID<br>~~SS~~<br>~~=——~~|6a<br>~~SS~~<br>~~**PO**~~<br>~~=——~~|A|
||TC= 70 °C<br>~~**|**~~<br>~~|~~<br>~~|~~||6a<br>~~**PO**~~<br>~~PO~~<br>~~=——~~||
||TA= 25 °C<br>~~**|**~~<br>~~|~~<br>~~|~~||4.5b, c<br>~~**PO**~~<br>~~PO~~<br>~~=——~~||
||TA= 70 °C<br>~~**|**~~<br>~~|~~<br>~~|~~||3.6b, c<br>~~**PO**~~<br>~~PO~~<br>~~=——~~||
|Pulsed drain current(t = 300μs)<br>~~Oo~~<br>~~**|**~~<br>~~|~~||IDM<br>~~=——~~|15<br>~~**PO**~~<br>~~=——~~||
|Continuous source-drain diode current<br>~~|~~<br>~~|~~|TC= 25 °C<br>~~|~~|IS<br>~~=——~~|6a<br>~~=——~~||
||TA= 25 °C<br>~~|~~<br>~~|~~||1.63b, c<br>~~=——~~<br>~~Pe~~||
|Maximum power dissipation<br>~~|~~<br>~~|~~<br>~~|~~|TC= 25 °C<br>~~|~~<br>~~|~~<br>~~|~~|PD<br>~~=——~~|10<br>~~=——~~<br>~~Pe~~<br>~~Po~~|W|
||TC= 70 °C<br>~~|~~<br>~~|~~||6.4<br>~~Pe~~<br>~~Po~~||
||TA= 25 °C<br>~~|~~||1.95 b, c<br>~~Po~~||
||TA= 70 °C||1.25b, c||
|Operating junction and storage temperature range<br>~~OG~~<br>~~a~~||TJ,Tstg<br>~~OG~~<br>~~a~~|-55 to +150<br>~~OG~~<br>~~a~~|°C<br>~~a~~|
|Solderingrecommendations(peak temperature)d,e<br>~~a~~||~~a~~|260<br>~~a~~||



## **Notes** 

a. Package limited 

- b. Surface mounted on 1" x 1" FR4 board 

c. t = 5 s 

- d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection 

- e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state condition is 100 °C/W 

S21-1168-Rev. A, 29-Nov-2021 

Document Number: 63165 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiB4316EDK** 

www.vishay.com 

Vishay Siliconix 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|30|-|-|V|
|VDStemperature coefficient|ΔVDS/TJ|ID= 250 μA|-|34|-|mV/°C|
|VGS(th)temperature coefficient|ΔVGS(th)/TJ||-|-3.3|-||
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|0.6|-|1.4|V|
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 4.5 V|-|-|± 0.5|μA|
|||VDS= 0 V, VGS= ± 12 V|-|-|± 20||
|Zero gate voltage drain current|IDSS|VDS= 30 V, VGS= 0 V|-|-|1||
|||VDS= 30 V, VGS= 0 V, TJ= 55 °C|-|-|10||
|Drain-source on-state resistancea|RDS(on)|VGS= 10 V, ID= 4 A|-|0.047|0.057|Ω|
|||VGS= 4.5 V, ID= 3 A|-|0.051|0.062||
|||VGS= 2.5 V, ID= 1 A|-|0.062|0.078||
|Forward transconductancea|gfs|VDS= 15 V, ID= 3 A|-|13|-|S|
|**Dynamic b**|||||||
|Total gate charge|Qg|VDS= 15 V, VGS= 10 V, ID= 4 A|-|7.5|12|nC|
|||VDS= 15 V, VGS= 4.5 V, ID= 4 A|-|3.5|5.5||
|Gate-source charge|Qgs||-|1.8|-||
|Gate-drain charge|Qgd||-|0.7|-||
|Gate resistance|Rg|f = 1 MHz|0.6|3.3|6.6|Ω|
|Turn-on delay time|td(on)|VDD= 15 V, RL= 4.7Ω<br>ID ≅3.2 A, VGEN= 4.5 V, Rg= 1Ω|-|20|40|ns|
|Rise time|tr||-|60|120||
|Turn-off delay time|td(off)||-|25|50||
|Fall time|tf||-|45|90||
|Turn-on delay time|td(on)|VDD= 15 V, RL= 4.7Ω<br>ID ≅3.2 A, VGEN= 10 V, Rg= 1Ω|-|1.5|5||
|Rise time|tr||-|30|60||
|Turn-off delay time|td(off)||-|15|30||
|Fall time|tf||-|50|100||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous source-drain diode current|IS|TC= 25 °C|-|-|3.9|A|
|Pulse diode forward current|ISM||-|-|15||
|Body diode voltage|VSD|IS= 3.2 A, VGS= 0 V|-|0.87|1.2|V|
|Body diode reverse recovery time|trr|IF= 3.2 A, dI/dt = 100 A/μs,<br>TJ= 25 °C|-|10|20|ns|
|Body diode reverse recovery charge|Qrr||-|4|10|nC|
|Reverse recovery fall time|ta||-|5.3|-|ns|
|Reverse recovery rise time|tb||-|4.6|-||



## **Notes** 

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 

b. Guaranteed by design, not subject to production testing 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S21-1168-Rev. A, 29-Nov-2021 

Document Number: 63165 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiB4316EDK** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1.500<br>1.200<br>0.900<br>0.600 TJ = 25 °C<br>0.300<br>0.000<br>0  3  6  9  12  15<br>VGS - Gate-Source Voltage (V)<br> - Gate Current (mA)<br>IGSS<br>**----- End of picture text -----**<br>


**Gate Current vs. Gate-Source Voltage** 

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10 [-2]<br>10 [-3]<br>10 [-4]<br>10 [-5] TJ = 150 °C<br>10 [-6]<br>10 [-7] TJ = 25  ° C<br>10 [-8]<br>10 [-9]<br>10 [-10]<br>0  3  6  9  12  15<br>VGS - Gate-to-Source Voltage (V)<br> - Gate Current (A)<br>IGSS<br>**----- End of picture text -----**<br>


**Gate Current vs. Gate-Source Voltage** 

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15<br>VGS = 5 V thru 3 V<br>VGS = 2.5 V<br>12<br>9<br>VGS = 2 V<br>6<br>3<br>VGS = 1.5 V<br>0<br>0.0   0.5   1.0   1.5   2.0   2.5   3.0<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Output Characteristics** 

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0.160<br>0.120<br>0.080<br>VGS = 2.5 V  VGS = 4.5 V<br>0.040   [V] [GS] [= 10 V]<br>0.000<br>0   3   6   9   12   15<br>ID - Drain Current (A)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Drain Current and Gate Voltage** 

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5<br>4<br>3<br>2   TC = 25 °C<br>1   TC = 125 °C<br>TC = - 55 °C<br>0<br>0.0   0.5   1.0   1.5   2.0<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>450<br>400<br>350<br>300  Ciss<br>250<br>200<br>150<br>100  C rss<br>50  Coss<br>0<br>0  5  10  15  20  25  30<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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Capacitance<br>**----- End of picture text -----**<br>


S21-1168-Rev. A, 29-Nov-2021 

Document Number: 63165 

**3** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiB4316EDK** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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10<br>ID = 4 A<br>VDS = 7.5 V<br>8<br>6<br>VDS = 15 V<br>4  VDS = 24 V<br>2<br>0<br>0  2  4  6  8<br>Qg - Total Gate Charge (nC)<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Gate Charge** 

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100<br>10<br>TJ = 150 °C<br>TJ = 25 °C<br>1<br>0.1<br>0.0  0.2  0.4  0.6  0.8  1.0  1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)IS<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward Voltage** 

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1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>ID = 250 μA<br>0.7<br>0.6<br>0.5<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


**Threshold Voltage** 

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1.8<br>1.6<br>VGS = 10 V, 4.5 V, ID = 3.2 A<br>1.4<br>1.2<br>VGS = 2.5 V, ID = 1 A<br>1.0<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br>0.160<br>0.140<br>ID = 3 A D = 3 A  = 3 A<br>0.120<br>0.100<br>TJ = 125 °C J = 125 °C  = 125 °C °C C<br>0.080<br>0.060<br>0.040   T J  = 25 °C °C C<br>0.020<br>0.000<br>0  1  2  3  4  5<br>VGS - Gate-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)  - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>Pulse (s)<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br>


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0.160<br>0.140<br>ID = 3 A D = 3 A  = 3 A<br>0.120<br>0.100<br>TJ = 125 °C J = 125 °C  = 125 °C °C C<br>0.080<br>0.060<br>0.040   T J  = 25 °C °C C<br>0.020<br>0.000<br>0  1  2  3  4  5<br>VGS - Gate-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)  - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Single Pulse Power (Junction-to-Ambient)<br>**----- End of picture text -----**<br>


Document Number: 63165 

S21-1168-Rev. A, 29-Nov-2021 

**4** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiB4316EDK** 

Vishay Siliconix 

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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100<br>IDM limited<br>10<br>100 µ s<br>Limited by R DS(on) a<br>1 1 ms<br>10 ms<br>100 m s<br>0.1 10s, 1s<br>DC<br>T A  = 25  ° C,<br>single pulse BVDSS limited<br>0.01<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operating Area, Junction-to-Ambient** 

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12 10000<br>9<br>1000<br>6<br>100<br>3<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating  [a]<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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12 10000<br>9<br>1000<br>6<br>100<br>3<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Power Derating<br>P - Power (W)<br>**----- End of picture text -----**<br>


## **Note** 

a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 

S21-1168-Rev. A, 29-Nov-2021 

Document Number: 63165 

**5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiB4316EDK** 

Vishay Siliconix 

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1<br>Duty cycle = 0.5<br>0.2<br>0.1 Notes:<br>0.1<br>0.05 PDM<br>0.02 1. Duty cycle, D = t1 t2 tt12<br>2. Per unit base = RthJA = 100 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single pulse 4. Surface mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty cycle = 0.5<br>0.2<br>0.1<br>0.1 0.02 0.05<br>Single pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Normalized Thermal Transient Impedance, Junction-to-Case** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63165._ 

S21-1168-Rev. A, 29-Nov-2021 

Document Number: 63165 

**6** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 09-Jul-2021 

Document Number: 91000 

**1** 



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