# Power MOSFET, TrenchFET, N Channel, 200 V, 2.6 A, 1.38 ohm, SC-70, Surface Mount

![Product image](https://novapart.co/image/farnell:2547295RL/)

**URL**: https://novapart.co/products/SIA456DJ-T1-GE3/power-mosfet-trenchfet-n-channel-200-v-26-a-138
**SKU**: SIA456DJ-T1-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3470
**Stock**: 1000+
**Lead Time**: 344 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 19W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SC-70 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.6A |
| Drain Source On State Resistance | 1.38ohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2547295RL/)

**SiA456DJ** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **N-Channel 200 V (D-S) MOSFET** 

## **FEATURES** 

**PowerPAK[®] SC-70-6L Single** D • TrenchFET[®] power MOSFET D 6 S 5 | • Thermally enhanced PowerPAK[®] SC-70 package 4 - Small footprint area - Low on-resistance S • Material categorization: for definitions of 1 7 2 D compliance please see www.vishay.com/doc?99912 3 D N 1 >. G ~~o~~ a Ln **APPLICATIONS** Top View Bottom View D **Marking code:** AG • Boost converter for portable devices **PRODUCT SUMMARY** VDS (V) 200 RDS(on) max. (  ) at VGS = 4.5 V 1.38 G RDS(on) max. (  ) at VGS = 2.5 V 1.50 RDS(on) max. (  ) at VGS = 1.8 V 3.50 Qg typ. (nC) 5 S ID (A)[a] 2.6 ~~a~~ Configuration Single ~~4~~ N-Channel MOSFET 

## **ORDERING INFORMATION** 

|Package|PowerPAK SC-70|
|---|---|
|Lead(Pb)-free and halogen-free|SiA456DJ-T1-GE3|



[_rrtst—“‘CSTCOC™~™OOTTCSC“‘t;‘“S*S*S*s*s~s~S~S~C‘“SsSSSCSCSCédC **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) ~~GD~~ **PARAMETER SYMBOL** ~~QO~~ **LIMIT UNIT** Drain-source voltage VDS 200 V Gate-source voltage VGS ±16 ~~Oop~~ TC = 25 °C 2.6 TC = 70 °C 2.1 Continuous drain current (TJ = 150 °C) ~~|~~ ID ~~Pe~~ TA = 25 °C 1.1[ b, c] ~~| Pe a_i|~~ TA = 70 °C ~~ee~~ 0.9[ b, c] A Pulsed drain current IDM 2 Continuous source-drain diode current TC = 25 °C IS 3.6 ~~**e** e~~ T ~~es~~ A = 25 °C ~~e~~ 2.9[ b, c] TC = 25 °C 19 TC = 70 °C 12 Maximum power dissipation ~~|~~ PD W TA = 25 °C 3.5[ b, c] ~~| | i~~ TA = 70 °C 2.2[ b, c] ~~_ oe~~ Operating junction and storage temperature range TJ, Tstg -55 to +150 °C ~~a~~ Soldering recommendations (peak temperature)[ d, e] 260 **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT** Maximum junction-to-ambient[ b, f] t  5 s RthJA 28 36 °C/W Maximum junction-to-case (drain) Steady state RthJC 5.3 6.5 

## **Notes** 

a. TC = 25 °C 

- b. Surface mounted on 1" x 1" FR4 board 

c. t = 5 s 

- d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection 

- e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W 

S-81952-Rev. B, 25-Aug-08 

Document Number: 68642 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiA456DJ** 

Vishay Siliconix 

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www.vishay.com 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|200|-|-|V|
|VDStemperature coefficient|VDS/TJ|ID= 250 μA|-|265|-|mV/°C|
|VGS(th)temperature coefficient|VGS(th)/TJ||-|-3.5|-||
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|0.6|-|1.4|V|
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ±16 V|-|-|±100|nA|
|Zero gate voltage drain current|IDSS|VDS= 200 V, VGS= 0 V|-|-|1|μA|
|||VDS= 200 V, VGS= 0 V, TJ= 55 °C|-|-|10||
|On-state drain currenta|ID(on)|VDS5 V, VGS= 4.5 V|2|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= 4.5 V, ID= 0.75 A|-|1.08|1.38||
|||VGS= 2.5 V, ID= 0.5 A|-|1.12|1.5||
|||VGS= 1.8 V, ID= 0.1 A|-|1.2|3.5||
|Forward transconductancea|gfs|VDS= 4 V, ID= 0.75 A|-|5|-|S|
|**Dynamicb**|||||||
|Input capacitance|Ciss|VDS= 100 V, VGS= 0 V, f = 1 MHz|-|350|-|pF|
|Output capacitance|Coss||-|12|-||
|Reverse transfer capacitance|Crss||-|6|-||
|Total gate charge|Qg|VDS= 100 V, VGS= 10 V, ID= 1.1 A|-|9.5|14.5|nC|
|||VDS= 100 V, VGS= 4.5 V, ID= 1.1 A|-|5|7.5||
|Gate-source charge|Qgs||-|0.7|-||
|Gate-drain charge|Qgd||-|1.7|-||
|Gate resistance|Rg|f = 1 MHz|-|2|-||
|Turn-on delay time|td(on)|VDD= 100 V, RL= 111,<br>ID 0.9 A, VGEN= 4.5 V, Rg= 1|-|10|15|ns|
|Rise time|tr||-|25|40||
|Turn-off delay time|td(off)||-|30|45||
|Fall time|tf||-|20|30||
|Turn-on delay time|td(on)|VDD= 100 V, RL= 111,<br>ID 0.9 A, VGEN= 10 V, Rg= 1|-|5|10||
|Rise time|tr||-|20|30||
|Turn-off delay time|td(off)||-|16|25||
|Fall time|tf||-|12|20||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous source-drain diode current|IS|TC= 25 °C|-|-|3.6|A|
|Pulse diode forward current|ISM||-|-|2||
|Body diode voltage|VSD|IS= 0.9 A, VGS= 0 V|-|0.8|1.2|V|
|Body diode reverse recovery time|trr|IF= 0.9 A, di/dt = 100 A/μs,<br>TJ= 25 °C|-|40|80|ns|
|Body diode reverse recovery charge|Qrr||-|40|80|nC|
|Reverse recovery fall time|ta||-|21|-|ns|
|Reverse recovery rise time|tb||-|19|-||



## **Notes** 

a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S-81952-Rev. B, 25-Aug-08 

Document Number: 68642 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiA456DJ** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
2.0<br>VGS = 5 thru 2 V<br>1.6<br>1.2<br>0.8<br>0.4<br>VGS = 1 V<br>0.0<br>0 1 2 3<br>VDS - Drain-to-Source Voltage (V)<br>- Drain Current (A)<br>I D<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

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1.6<br>1.5<br>1.4<br>1.3 V GS = 1.8 V<br>1.2<br>VGS = 2.5 V<br>1.1<br>VGS = 4.5 V<br>1.0<br>0.9<br>0.8<br>0.0 0.4 0.8 1.2 1.6 2.0<br>ID - Drain Current (A)<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Drain Current and Gate Voltage** 

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1.0<br>TC = - 55 °C<br>0.8<br>TC = 25 °C<br>0.6<br>TC = 125 °C<br>0.4<br>0.2<br>0.0<br>0.0 0.5 1.0 1.5 2.0<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>600<br>500<br>400 C iss<br>300<br>200<br>100 C rss<br>Coss<br>0<br>0 10 20 30 40 50<br>VDS - Drain-to-Source Voltage (V)<br>- Drain Current (A)<br>I D<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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Capacitance<br>**----- End of picture text -----**<br>


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10<br>ID = 1.1 A<br>VDS = 100 V<br>8<br>VDS = 160 V<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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2.0<br>1.8<br>VGS = 4.5 V, 2.5 V, ID = 0.75 A<br>VGS = 1.8 V, ID = 0.1 A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>- On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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On-Resistance vs. Junction Temperature<br>**----- End of picture text -----**<br>


S-81952-Rev. B, 25-Aug-08 

Document Number: 68642 

**3** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiA456DJ** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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10<br>1<br>TJ = 150  ° C TJ = 25 °C<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0<br>VSD - Source-to-Drain Voltage (V)<br>- Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward Voltage** 

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**----- Start of picture text -----**<br>
3.0<br>ID = 0.75 A<br>2.5<br>TJ = 125 °C<br>2.0<br>1.5<br>TJ = 25 °C<br>1.0<br>0.5<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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1.4<br>1.3<br>1.2<br>1.1<br>ID = 250 µA<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>(V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


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Threshold Voltage<br>**----- End of picture text -----**<br>


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30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>Time (s)<br>Power  (W)<br>**----- End of picture text -----**<br>


**Single Pulse Power (Junction-to-Ambient)** 

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10<br>Limited by R DS(on) *<br>1 100 µs<br>1 ms<br>0.1 10 ms<br>100 ms<br>1 s<br>10 s<br>0.01<br>DC<br>Single PulseTA = 25 °C BVDSS<br>Limited<br>0.001<br>0.1 1 10 100 1000<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br>Drain Current (A)<br>-<br>I D<br>**----- End of picture text -----**<br>


S-81952-Rev. B, 25-Aug-08 

Document Number: 68642 

**4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiA456DJ** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
3.0 20<br>2.5<br>15<br>2.0<br>1.5 10<br>1.0<br>5<br>0.5<br>0.0 0<br>0 25 50 75 100 125 150 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating [ a] Power Derating<br>Drain Current (A)<br>-<br>I D<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Note** 

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 

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1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>P DM<br>0.05 t1<br>1. Duty Cycle, D = t2 tt12<br>0.02 2. Per Unit Base = RthJA = 65  C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambie<br>0.1<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68642._ 

S-81952-Rev. B, 25-Aug-08 

Document Number: 68642 

**5** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 49] intentionally omitted <==**

## **PowerPAK**[®] **SC70-6L** 

## **Package Information** 

## Vishay Siliconix 

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**----- Start of picture text -----**<br>
e  b  e  b<br>PIN1  PIN2  PIN3  PIN1  PIN2  PIN3<br>D2  D1  D1<br>D1<br>PIN6  PIN5  PIN4 PIN6  PIN5  PIN4<br>K3 K1 K2  K2  K1  K2<br>BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL<br>D A<br>Notes:<br>1. All dimensions are in millimeters<br>2. Package outline exclusive of mold flash and metal burr<br>3. Package outline inclusive of plating<br>Z<br>z<br>DETAIL Z<br>L  L<br>K4 K<br>E2<br>E1  E1  E1<br>E3<br>K  K<br>E<br>C A1<br>**----- End of picture text -----**<br>


|**DIM**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MILLIMETERS**|||**INCHES**|||**MILLIMETERS**|||**INCHES**|||
||**Min**|**Nom**|**Max**|**Min**<br>|**Nom**|**Max**|**Min**|**Nom**|**Max**|**Min**|**Nom**|**Max**|
|**A**|0.675|0.75|0.80|0.027<br>|0.030|0.032|0.675|0.75|0.80|0.027|0.030|0.032|
|**A1**|0|-|0.05|0|-|0.002|0|-|0.05|0|-|0.002|
|**b**|0.23|0.30|0.38|0.009<br>|0.012|0.015|0.23|0.30|0.38|0.009|0.012|0.015|
|**C**|0.15|0.20|0.25|0.006<br>|0.008|0.010|0.15|0.20|0.25|0.006|0.008|0.010|
|**D**|1.98|2.05|2.15|0.078<br>|0.081|0.085|1.98|2.05|2.15|0.078|0.081|0.085|
|**D1**|0.85|0.95|1.05|0.033<br>|0.037|0.041|0.513|0.613|0.713|0.020|0.024|0.028|
|**D2**|0.135|0.235|0.335|0.005<br>|0.009|0.013|||||||
|**E**|1.98|2.05|2.15|0.078<br>|0.081|0.085|1.98|2.05|2.15|0.078|0.081|0.085|
|**E1**|1.40|1.50|1.60|0.055<br>|0.059|0.063|0.85|0.95|1.05|0.033|0.037|0.041|
|**E2**|0.345|0.395|0.445|0.014<br>|0.016|0.018|||||||
|**E3**|0.425|0.475|0.525|0.017<br>|0.019|0.021|||||||
|**e**|0.65 BSC|||0.026 BSC|||0.65 BSC|||0.026 BSC|||
|**K**|0.275 TYP|||0.011 TYP|||0.275 TYP|||0.011 TYP|||
|**K1**|0.400 TYP|||0.016 TYP|||0.320 TYP|||0.013 TYP|||
|**K2**|0.240 TYP|||0.009 TYP|||0.252 TYP|||0.010 TYP|||
|**K3**|0.225 TYP|||0.009 TYP|||||||||
|**K4**|0.355 TYP|||0.014 TYP|||||||||
|**L**|0.175|0.275|0.375|0.007<br>|0.011|0.015|0.175|0.275|0.375|0.007|0.011|0.015|
|**T**|||||||0.05|0.10|0.15|0.002|0.004|0.006|
|ECN: C-07431−Rev. C, 06-Aug-07<br>DWG: 5934|||||||||||||



ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 

Document Number: 73001 06-Aug-07 

www.vishay.com 

1 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED PAD LAYOUT FOR PowerPAK[®] SC70-6L Single** 

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0.300 (0.012) 0.650 (0.026)<br>0.350 (0.014)<br>0.275 (0.011)<br>0.550 (0.022)<br>0.475 (0.019)<br>2.200 (0.087) 1.500  [(0.059)] 0.870 (0.034)<br>0.235 (0.009)<br>0.355 (0.014)<br>0.350 (0.014)<br>1 0.650 (0.026) 0.300 (0.012)<br>0.950 (0.037)<br>Dimensions in mm/(Inches)<br>**----- End of picture text -----**<br>


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Return to Index<br>**----- End of picture text -----**<br>


Document Number: 70486 Revision: 21-Jan-08 

www.vishay.com 

11 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/SIA456DJ-T1-GE3/power-mosfet-trenchfet-n-channel-200-v-26-a-138)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/sia456dj-t1-ge3/mosfet-n-ch-200v-2-6a-sc-70-6/dp/2547295RL)
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