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SIA456DJ-T1-GE3
Power MOSFET, TrenchFET, N Channel, 200 V, 2.6 A, 1.38 ohm, SC-70, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 19W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: SC-70
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.6A
- Drain Source On State Resistance: 1.38ohm
- Gate Source Threshold Voltage Max: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.365 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 1, 2026