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SI6913DQ-T1-GE3
Dual MOSFET, P Channel, 12 V, 12 V, 4.9 A, 4.9 A, 0.016 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Vo
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 830mW
- Power Dissipation P Channel: 830mW
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 4.9A
- Continuous Drain Current Id P Channel: 4.9A
- Drain Source On State Resistance N Channel: 0.016ohm
- Drain Source On State Resistance P Channel: 0.016ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.83 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 23, 2026