SI4850EY-T1-GE3

Power MOSFET, N Channel, 60 V, 6 A, 0.022 ohm, SOIC, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 3.3W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: SOIC
Drain Source Voltage Vds: 60V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 6A
Drain Source On State Resistance: 0.022ohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	1000
Price	0.806 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026