Illustrative purposes only
SI4511DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 7.2 A, 0.0115 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 2W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0115ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 7.2A
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 1.1W
- Gate Source Threshold Voltage Max: 600mV
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 7.2A
- Continuous Drain Current Id P Channel: 7.2A
- Drain Source On State Resistance N Channel: 0.0115ohm
- Drain Source On State Resistance P Channel: 0.0115ohm
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.569 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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