SI4483ADY-T1-GE3

Power MOSFET, P Channel, 30 V, 19.2 A, 8800 µohm, SOIC, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-19.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0127ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: -
Qualification: -
Power Dissipation: 5.9W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 4.5V
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 19.2A
Drain Source On State Resistance: 8800µohm
Gate Source Threshold Voltage Max: 2.1V

Delivery and price
Units per pack	1000
Price	0.398 €
Current stock	19405
Lead time	7 days

Datasheet

Updated at March 1, 2026