# Power MOSFET, P Channel, 30 V, 8 A, 0.02 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2577192/)

**URL**: https://novapart.co/products/SI4435DYTRPBF/power-mosfet-p-channel-30-v-8-a-002-ohm-soic
**SKU**: SI4435DYTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2760
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; ; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577192/)

## Si4435DYPbF 

## HEXFET . Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free 

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A<br>S 1 8 D<br>S 2 7 D VDSS = -30V<br>S 3 6 D<br>G 4 5 D R  = 0.020Ω<br>DS(on)<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>


## **Description** 

These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering technique 

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Parameter Max. Units<br>eees<br>rs VDS  ee Drain- Source Voltage QO -30 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0<br>es ee<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -6.4 A<br>oees IDM  ee Pulsed Drain Current  © Qe -50<br>PD @TA = 25°C Power Dissipation 2.5<br>SSes PD @TA = 70°C ee Power Dissipation 1.6<br>Linear Derating Factor 0.02 W/°C<br>esQO<br>VGS Gate-to-Source Voltage  ± 20 V<br>esQO<br>TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>es<br>**----- End of picture text -----**<br>


## **Thermal Resistance** 

**Parameter Max. Units** ~~eyns~~ RθJA Maximum Junction-to-Ambient 50 °C/W ~~ee ©~~ 

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|~~Bs~~<br>~~es~~|**Parameter**<br>~~a~~|**Min. **<br>~~Gs~~|**Typ. **<br>~~rs~~|**Max.**<br>~~ss~~|**Units**<br>~~ss~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Bs~~<br>~~a~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~se~~|-30<br>~~Gs ~~<br>~~se~~|–––<br> ~~rs~~<br>~~se~~|–––<br>~~se~~<br>~~ss~~|V<br>~~se~~<br>~~ss~~|VGS= 0V, ID= -250µA<br>~~se~~|
|∆V(BR)DSS/∆TJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~|––– <br>~~ee~~|-0.019 <br>~~ee~~|–––<br>~~ss~~|V/°C<br>~~ss~~|Reference to 25°C, ID= -1mA|
|RDS(on)<br>~~es~~<br>~~a~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~a~~<br>**|**<br>|––– <br>~~a~~<br>**|**|0.015 0.020<br>~~a~~|0.015 0.020<br>~~ss~~<br>~~a~~|Ω<br>~~ss~~<br>~~a~~<br>|VGS= -10V, ID= -8.0A<br>~~a~~|
|||––– <br>~~a~~<br>**|**<br>~~fs~~<br>|0.026 0.035<br>~~a~~<br>~~fs~~<br>|0.026 0.035<br>~~a~~<br>||VGS= -4.5V, ID= -5.0A<br>~~a~~<br>|
|VGS(th)<br>~~ss~~<br>~~a~~|Gate Threshold Voltage<br>**|**<br>~~ss~~<br>|-1.0<br>**|**<br>~~ss~~<br>~~fs~~<br>|–––<br>~~ss~~<br>~~fs~~<br>|–––<br>~~ss~~<br><br>~~ss~~|V<br>~~ss~~<br><br>~~ss~~|VDS= VGS, ID= -250µA<br>~~ss~~<br>|
|gfs<br>~~a~~|Forward Transconductance<br>~~ses~~|–––<br>~~fs~~<br>~~ses~~|11<br>~~fs~~<br>~~ses~~|–––<br>~~ses~~<br>~~ss~~|S<br>~~ses~~<br>~~ss~~|VDS= -15V, ID= -8.0A<br>~~ses~~|
|IDSS<br>~~a~~|Drain-to-Source Leakage Current<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|-10<br>~~ss~~<br>~~a~~|~~ss~~<br>8~~Pe~~|VDS= -24V, VGS= 0V<br>~~Pe~~|
|||–––<br>~~a~~|–––<br>~~a~~|-10<br>~~a~~||VDS= -15V, VGS= 0V, TJ= 70°C<br>~~Pe~~|
|~~ee~~<br>~~pf~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~|~~ee~~|VGS= -20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~pf~~_____________}|–––<br>~~ee~~<br>_____________}<br>{|–––<br>~~ee~~<br>}|100<br>~~ee~~||VGS= 20V<br>~~ee~~|
|Qg<br>~~pf~~|Total Gate Charge<br>~~pf~~_____________}|–––<br>_____________}<br>{|40<br>}|60|nC|ID= -4.6A<br>VDS= -15V<br>VGS= -10V<br>~~@~~<br>@|
|Qgs<br>~~pf~~<br>a<br>~~Pe ee~~|Gate-to-Source Charge<br>~~pf~~_____________}<br>~~ee~~|–––<br>_____________}<br>{|7.1<br>}|–––|||
|Qgd<br>~~pf~~<br>~~Pe ee~~<br>~~ee ee~~|Gate-to-Drain("Miller")Charge<br>~~pf~~ _____________}<br>~~ee~~<br>~~ee~~|–––<br>_____________}<br>{|8.0<br>}|–––|||
|td(on)<br>~~Pe ee~~<br>~~ee ee~~<br>ee|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––|16|24||VDD= -15V, VGS= -10V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 15Ω<br>~~@~~<br>@|
|tr<br>~~ee ee~~<br>ee<br>ee|Rise Time<br>~~ee~~|–––|76|110|||
|td(off)<br>ee<br>ee<br>~~ee~~|Turn-Off Delay Time|–––|130|200|||
|tf<br>ee<br>~~ee~~<br>~~ee~~|Fall Time|–––|90|140|||
|Ciss<br>~~ee~~<br>~~ee~~<br>es|Input Capacitance|–––|2320|–––|pF|VGS= 0V<br>VDS= -15V<br>ƒ = 1.0kHz|
|Coss<br>~~ee~~<br>es<br>ee|Output Capacitance|–––|390|–––|||
|Crss<br>es<br>ee|Reverse Transfer Capacitance|–––|270|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~Re~~|**Parameter**<br>~~as~~|**Min. **<br>~~as~~<br>~~ss~~|**Typ. **<br>~~as~~<br>~~ss~~|**Max.**<br>~~as~~|**Units**<br>~~as~~|**Conditions**<br>~~as~~|
|---|---|---|---|---|---|---|
|IS<br>~~Re~~|Continuous Source Current<br>(Body Diode)<br>~~as~~|~~as~~<br>~~ss~~|~~as~~<br>~~ss~~|2.5<br>~~as~~|~~as~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~as~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~rs~~|~~de~~|~~de~~|50|||
|VSD<br>~~a~~<br>~~p++~~|Diode Forward Voltage<br>~~rs~~<br>~~p++~~|–––<br>~~de~~<br>~~p++~~|–––<br>~~de~~<br>~~p++~~++j,|-1.2<br>++j,|V<br>++j,|TJ= 25°C, IS= -2.5A, VGS= 0V<br>++j,<br>~~.|~~|
|trr<br>~~a~~<br>~~p++~~<br>es|Reverse Recovery Time<br>~~rs ~~<br>~~p++~~<br>~~se~~|–––<br> ~~de~~<br>~~p++~~<br>~~se~~|34<br>~~de~~<br>~~p++~~++j,<br>~~se~~|51<br>++j,|ns<br>++j,|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/µs<br>++j,<br>~~.|~~<br>@|
|Qrr<br>~~p++~~<br>es|Reverse Recovery Charge<br>~~p++~~<br>~~se~~|–––<br>~~p++~~<br>~~se~~|33<br>~~p++~~++j,<br>~~se~~|50<br>++j,|nC<br>++j,||



@ Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on FR-4 board,  t ≤ 

Pulse width ≤ 300µs; duty cycle ≤ 

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 1000 VGS  1000 VGS<br>TOP -15V TOP -15V<br>-10V -10V<br>-7.0V -7.0V<br>-5.5V-4.5V ct eet een -5.5V-4.5V i ee eee<br>-4.0V -4.0V<br> 100 -3.5V ina oma  100 -3.5V oh<br>BOTTOM -2.7V BOTTOM -2.7V<br>aD” 20 een | | e e<br> 10  10<br>Faticeauest| eerie Za g -2.70V at<br> 1 -2.70V  1 TA<br>n t h eesti maa<br>0.1 Co EEE 20µs PULSE WIDTHT  = 25J °C 0.1 T rl th 20µs PULSE WIDTHT  = 150J °C<br>0.1  1  10  100 0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0<br>ID = -8.0A<br>es<br>SSEs [ee] SS T  = 25  CJ SSS ° Pec LEEEEEELLLLEEE<br>= a PEELE EEE<br>a a T  = 150  CJ ° 1.5<br>y<br>| | | TY PELLET<br>“che<br>PEL AL EL PLEA TLL peaat<br> 10 1.0<br>Ee ee ee / A ee es ee es<br>aee 7 A ——— LEERLTT |<br>a ee 27 2 ee ee ee<br>a EEE EEE<br>| | A | [ [| [| | | 0.5<br>V      = -15VDS<br>a 20µs PULSE WIDTH PEELE E EE VGS = -10V<br> 1 0.0<br>2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3500<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>3000 Crss = Cgd<br>—+ Coss = Cds + Cgd<br>ee<br>2500 Ciss<br>EO a o<br>a eel<br>2000<br>T_T oie Co<br>1500 es<br>a eel<br>1000<br>TT TT CT |<br>500 esa Coss<br>el<br>P——| Crss el<br>0 P i<br> 1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>a<br> 10<br>T  = 150  CJ °<br>a T  = 25  CJ °<br> 1 PIZAITA TT<br>ee V      = 0 V GS<br>0.1 JE tf ttt}<br>0.4 0.6 0.8 1.0 1.2 1.4<br>-V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
20<br>ID = -4.6A<br>VDS =-15V<br>HHH REA<br>16<br>See eee<br>12 a<br>PT TTT Pe<br>8 PTTrT PTT TP ArTAP<br>F Z|<br>4 PELL<br>KEL TEL LL<br>rrrTT TT<br>0 Vi lili ttt tt ft tl<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>TT<br> 100<br>100us<br>1ms<br>ead ence all<br> 10<br>AN<br>10ms<br> T TAJ = 25  C= 150  C° °<br> 1 f  Single Pulse e| inane ania<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
8.0 SO 0.20 = o<br>0.10<br>6.0<br>0.00<br>Id = -250µA<br>4.0 -0.10<br>FENCE] E E SCE<br>PL te tT INAL -0.20 P t ft } YNN Ly<br>2.0<br>see -0.30 L EEEENEN<br>Perey -0.40 LLL IN<br>0.0<br>25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T   , Case TemperatureC (  C)° TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs.<br>Fig 10.   Typical Vgs(th) Variance Vs.<br>Case Temperature<br> Juction Temperature<br> 100<br>D = 0.50<br> 10 0.20<br>0.10<br>0.05<br> 1 0.02<br>0.01<br>PDM<br>t1<br>0.1 aii ot t2<br>SINGLE PULSE<br>| (THERMAL RESPONSE) 1. Duty factor D =Notes: t   / t1 2<br>ee ee| 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>-VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.10 0.10<br>P LE<br>0.08 0.08<br>0.06 0.06<br>t i Tt TT} L EE Ty<br>VGS= - 4.5V<br>Id = -8.0A<br>0.04 0.04<br>P LT P TETET }? yy? E p Ey t<br>0.02 0.02<br>P NP EL) perry<br>VGS = -10V<br>0.00 0.00<br>2 PTET 4 6 8 10 TTT) 12 14 16 0 L ib 10 20 i 30 tat 40<br>-VGS, Gate -to -Source Voltage  ( V ) -ID , Drain Current ( A )<br>)<br>Ω<br> ) RDS ( on) , Drain-to-Source On Resistance (<br>Ω<br>RDS(on) ,  Drain-to -Source Voltage (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [355 x 338] intentionally omitted <==**

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DIM es INCHES MILLIMETERS<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>ar 6 - H = D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>S 1 ls 2 3 4 oe e .050  BASIC 1.27  BASIC<br>i are ————<br>e1 .025  BASIC 0.635  BASIC<br>Tro a<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>ob ———— L .016 .050 0.40 1.27<br>a y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>ae C nine<br>y<br>ma i fo<br>0.10 [.004]<br>Jk 8X b v A1 o M L 8X L 8X c mi<br>fe} 0.25 [.010]  C TTI A B 7<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255] | [Good] aan<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| UU<br>3X 1.27 [.050] ee<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

**==> picture [204 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
XXXX<br>INTERNATIONAL F7101<br>RECTIFIER<br>LOGO<br>m e<br>**----- End of picture text -----**<br>


## DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR 

WW =  WEEK LOT CODE 

- A =  ASSEMBLY SITE CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [174 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>eos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION ss<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

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 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

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