# Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount
**URL**: https://novapart.co/products/SI4435DY/power-mosfet-p-channel-30-v-88-a-002-ohm-soic
**SKU**: SI4435DY
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3230
**Stock**: 1000+
**Lead Time**: 373 days (indicative)
## Description
Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 8.8A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3616832/)
**DATA SHEET** ~~ee~~ **www.onsemi.com**
## MOSFET – P-Channel, POWERTRENCH -30 V, -8.8 A, 20 m SI4435DY :
## SI4435DY
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D
D
D
D
G
S
m Pin 1 S
S
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## **General Description**
This P−Channel MOSFET is a rugged gate version of **onsemi** ’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 25 V).
**SOIC8 CASE 751EB**
## **MARKING DIAGRAM**
## **Features**
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4435
ALYW
4435 = Specific Device Code
A = Assembly Site
L = Wafer Lot Number
YW = Assembly Start Week
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- @ VGS = −10 VGS = −10 V = −10 V
- ~~|~~ @ VGS = −4.5 V = −4.5 V
- RDS(ON) = 20 m @ VGS = −10 VGS = −10 V = −10 V
- RDS(ON) = 35 m @ VGS = −4.5 V
- Low Gate Charge (17 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb−Free and Halide Free
**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted)
|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|
|---|---|
|**Symbol**
**Rating**
**Value**
**Unit**
VDSS
Drain−Source Voltage
−30
V
VGSS
Gate−Source Voltage
±20
V
ID
Drain Current – Continuous (Note 1a)
−8.8
A
Drain Current – Pulsed
−50
PD
Power Dissipation for Single
Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, TSTG
Operating and Storage Junction
Temperature Range
−55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
~~a~~||
|device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
**THERMAL CHARACTERISTICS**
**Symbol**
**Characteristics**
**Value**
**Unit**
R JA
Thermal Resistance,
Junction−to−Ambient
(Note 1a)
50
°C/W
R JA
Thermal Resistance,
125
°C/W
~~a~~
~~ee ee ~~
~~re~~||
|Junction−to−Ambient
(Note 1c)||
|R JC
Thermal Resistance,
25
°C/W||
|Junction−to−Case
(Note 1)||
## **PIN CONNECTION**
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5 4
6 3
7 2
8 1
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**ORDERING INFORMATION**
**Device Package Shipping**[†] SI4435DY SOIC8 2500 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, ~~T~~ including part orientation and tape sizes, please ~~T~~ refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ~~a~~
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2018 **April, 2025 − Rev. 6**
**SI4435DY/D**
**SI4435DY**
**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRI**|**ELECTRI**|**CAL CHARACTERISTICS**(TA= 25°C unles|s otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
||BVDSS|Drain−Source Breakdown Voltage
|VGS= 0 V, ID= −250�A|−30|−|−|V|
||�BVDSS
�TJ|Breakdown Voltage Temperature
Coefficient
|ID= −250�A,
Referenced to 25°C||−21|−|mV/°C|
||IDSS|Zero Gate Voltage Drain Current
|VDS= −24 V, VGS= 0 V|−|−|−1|�A|
||IGSSF|Gate−Body Leakage, Forward
|VGS= −20 V, VDS= 0 V|−|−|−100|nA|
||IGSSR|Gate−Body Leakage, Reverse
|VGS= 20 V, VDS= 0 V|−|−|100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
||VGS(th)|Gate Threshold Voltage
|VDS= VGS, ID= −250�A|−1|−1.7|−3|V|
||�VGS(th)
�TJ|Gate Threshold Voltage Temperature
Coefficient
|ID= −250�A,
Referenced to 25°C|−|5|−|mV/°C|
||RDS(on)|Static Drain−Source On Resistance
|VGS= −10 V, ID= −8.8 A|−|15|20|m�|
||||VGS= −4.5 V, ID= −6.7 A|−|22|35||
||||VGS= −10 V, ID= −8.8 A, TJ= 125°C|−|19|32||
||gFS|Forward Transconductance
|VDS= −5 V, ID= −8.8 A|−|24|−|S|
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss||Input Capacitance
Output Capacitance
Reverse Transfer Capacitance|VDS= −15 V, VGS= 0 V, f = 1.0 MHz|−|1604|−|pF|
|Coss||||−|408|−|pF|
|Crss||||−|202|−|pF|
|**SWITCHING CHARACTERISTICS**(Note 2)||||||||
|td(on)||Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time|VDD= −15 V, ID= −1 A, VGS= −10 V,
RGEN= 6�|−|13|23|ns|
|tr||||−|13.5|24|ns|
|td(off)||||−|42|68|ns|
|tf||||−|25|40|ns|
|Qg||Total Gate Charge
Gate−Source Charge
Gate−Drain Charge|VDS= −15 V, ID= −8.8 A, VGS= −5 V|−|17|24|nC|
|Qgs||||−|5|−|nC|
|Qgd||||−|6|−|nC|
|**DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS**||||||||
|IS||Maximum Continuous Drain−Source Diode Forward Current||−|−|−2.1|A|
|VSD||Drain−Source Diode Forward Voltage
|VGS= 0 V, IS= −2.1 A (Note 2)|−|−0.73|−1.2|V|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES:
1. R � JA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R � JC is guaranteed by design while R � CA is determined by the user’s board design.
a) 50 ° C/W when mounted on a 1 in[2] pad of 2 oz copper.
b) 105 ° C/W when mounted on a 0.04 in[2] pad of 2 oz copper.
c) 125 ° C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300 � s, Duty Cycle < 2.0%
**www.onsemi.com**
**2**
**SI4435DY**
## **TYPICAL CHARACTERISTICS**
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50 2
VGS = −10 V −6.0 V
−4.5 V −4.0 V VGS = −4.5 V
1.8
40
1.6 −4.5 V
30
−3.5 V −5.0 V
1.4
20 −6.0 V
1.2 −7.0 V
−8.0 V
−3.0 V
10 −10 V
1
0 0.8
0 1 2 3 0 10 20 30 40 50
−VDS, Drain−Source Voltage (V) −ID, Drain Current (A)
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
1.6 0.07
ID = −8.8 A ID = −4.4 A
VGS = −10 V
0.06
1.4
0.05
1.2
0.04
1 TA = 125 ° C
0.03
0.8
0.02
TA = 25 ° C
0.6 0.01
−50 −25 0 25 50 75 100 125 150 175 2 4 6 8 10
TJ, Junction Temperature ( � C) −VGS, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation Figure 4. On−Resistance Variation
with Temperature with Gate−to−Source Voltage
40 100
VDS = −5 V VGS = 0 V
TA = −55 ° C 25 ° C 10
30 T A = 125 ° C 25 ° C
1
−55 ° C
20 0.1
125 ° C 0.01
10
0.001
0 0.0001
1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1.0 1.2
−VGS, Gate to Source Voltage (V) −VSD, Body Diode Forward Voltage (V)
, Drain Current (A) , Normalized
D DS(On)
−I R
Drain−Source On−Resistance
) �
, Normalized , On−Resistance (
DS(On)
R
DS(on)
Drain−Source On−Resistance R
, Drain Current (A)
D
−I
, Reverse Drain Current (A)
S
−I
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**Figure 5. Transfer Characteristics**
**Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature**
**www.onsemi.com**
**3**
**SI4435DY**
## **TYPICAL CHARACTERISTICS** (continued)
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10 2500
ID = −8.8 A f = 1 MHz
VDS = −5 V VGS = 0 V
8
2000
−10 V
Ciss
6 1500
−15 V
4 1000
Coss
2 500
Crss
0 0
0 6 12 18 24 30 0 5 10 15 20 25 30
Qg, Gate Charge (nC) −VDS, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
100 50
SINGLE PULSE
RDS(on) LIMIT 100 � s R � JA = 125 ° C/W
1 ms 40 TA = 25 ° C
10
10 ms
100 ms
30
1 s
1
10 s
DC 20
0.1 V GS = −10 V
SINGLE PULSE 10
R � JA = 125 ° C/W
T A = 25 ° C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
−VDS, Drain−Source Voltage (V) t1, Time (s)
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.20.1 R � R JA � JA(t) = 125= r(t) + R ° C/W � JA
0.1
0.05
0.02 P(pk)
0.01
0.01 t1
t2
SINGLE PULSE TJ − TA = P(pk) × R � JA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, Time (s)
Capacitance (pF)
, Gate−Source Voltage (V)
GS
−V
, Drain Current (A)
D
−I
, Peak Transient Power (W)
(PK)
P
Thermal Resistance
r(t), Normalized Effective Transient
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**Figure 11. Transient Thermal Response Curve** Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries.
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOIC8** CASE 751EB ISSUE A
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DATE 24 AUG 2017
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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13735G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOIC8 PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
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---
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