# Power MOSFET, N Channel, 30 V, 12.5 A, 0.009 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2781158/)

**URL**: https://novapart.co/products/SI4420DYTRPBF/power-mosfet-n-channel-30-v-125-a-0009-ohm-soic
**SKU**: SI4420DYTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6410
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.009ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12.5A |
| Drain Source On State Resistance | 0.009ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781158/)

PD - 95729 

## Si4420DYPbF 

HEXFET Power MOSFET 

N-Channel  MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 

## **Description** 

This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.  The low on-resistance and low gate charge inherent to this technology make this  device ideal for low voltage or battery driven power conversion applications 

The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. 

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A<br>A<br>S 1 8 D VDSS = 30V<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D R  = 0.009Ω<br>DS(on)<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>


|~~Rs~~|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~Rs~~<br>es<br>~~Rs~~|Drain- Source Voltage|30<br>~~es oe~~|V<br>~~oe~~|
|ID@ TA= 25°C<br>~~Rs~~<br>es<br>——————————<br>~~Rs~~|Continuous Drain Current, VGS@ 10V<br>——————————|±12.5<br>——————————<br>~~es oe~~|A<br>——————————<br>~~oe~~|
|ID@ TA= 70°C<br>es<br>——————————<br>~~Rs~~|Continuous Drain Current, VGS@ 10V<br>——————————|±10<br>——————————<br>~~es oe~~||
|IDM<br>——————————<br>~~Rs~~|Pulsed Drain Current<br>——————————<br>©|±50<br>——————————<br>~~es oe~~||
|PD@TA= 25°C<br>~~Rs~~<br>~~eo~~<br>~~Rs ee~~|Power Dissipation<br>~~eo~~<br>~~ee~~|2.5<br>~~es oe~~<br>~~eo~~|~~oe~~<br>~~eo~~|
|PD@TA= 70°C<br>~~eo~~<br>~~Rs ee~~<br>~~es ee~~|Power Dissipation<br>~~eo~~<br>~~ee~~<br>~~ee~~|1.6<br>~~eo~~||
|~~Rs ee~~<br>~~es ee~~<br>~~Rs~~|Linear DeratingFactor<br>~~ee~~<br>~~ee~~<br>~~©~~|0.02|W/°C|
|EAS<br>~~es ee~~<br>~~Rs~~<br>~~es ee~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~©~~<br>~~ee~~|400|mJ|
|VGS<br>~~Rs~~<br>~~es ee~~<br>~~es~~|Gate-to-Source Voltage<br>~~©~~<br>~~ee~~<br>|± 20<br>|V<br>|
|TJ,TSTG<br>~~es ee~~<br>~~es~~|Junction and Storage Temperature Range<br>~~ee~~<br>|-55  to + 150<br>|°C<br>|



## **Thermal Resistance** 

~~a~~ **Parameter Max. Units** ~~©~~ RθJA Maximum Junction-to-Ambient 50 °C/W www.irf.com 1 

8/11/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|es|ee|ee|rs|ee|ee|es||
|---|---|---|---|---|---|---|---|
|es<br>~~a~~|**Parameter**<br>ee<br>||**Min. **<br>rs<br>~~Gs rn~~<br>|**Typ. **<br>ee<br>~~Gs rn~~<br>|**Max.**<br>ee<br>|**Units**<br>es<br>|**Conditions**<br>|
|V(BR)DSS<br>es <br>rs<br>~~a~~|Drain-to-Source Breakdown Voltage<br> ee<br>rs<br>||30<br>rs <br>rs<br>~~Gs rn~~<br><br>~~Gs~~|–––<br> ee <br>rs<br>~~Gs rn~~<br><br>~~rs~~|–––<br> ee <br>rs<br>|V<br> es<br>rs<br>|VGS= 0V, ID= 250µA<br>rs<br>|
|∆V(BR)DSS/∆TJ<br>~~a~~<br>~~Rs~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>||––– <br>~~Gs rn~~<br>~~es~~<br>~~Gs~~<br>~~|~~<br>|0.028<br>~~Gs rn~~<br>~~es~~<br>~~rs~~<br>~~|~~<br>|–––<br>~~es~~<br>|V/°C<br>~~es~~<br>|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~a~~<br>|
|RDS(on)<br>~~EE~~<br>~~Rs~~|Static Drain-to-Source On-Resistance<br>~~EE~~<br>||–––<br>~~Gs ~~<br>~~EE~~<br>~~|~~<br>|–––<br> ~~rs~~<br>~~EE~~<br>~~|~~<br>|0.009<br>~~EE~~<br>|Ω<br>~~EE~~<br>|VGS= 10V, ID= 12.5A<br>~~EE~~<br>~~a~~<br>|
||||–––<br>~~EE~~<br>~~|~~<br>|––– <br>~~EE~~<br>~~|~~<br><br>~~GOOO~~|0.013<br>~~EE~~<br><br>~~OO~~||VGS= 4.5V, ID= 10.5A<br>~~EE~~<br>~~a~~<br>|
|VGS(th)<br>~~Rs~~|Gate Threshold Voltage<br>~~eG~~||1.0<br>~~|~~<br>~~eG~~<br>~~Gs~~|–––<br>~~|~~<br>~~eG~~<br>~~GOOO~~<br>~~nd~~|–––<br>~~eG~~<br>~~OO~~|V<br>~~eG~~|VDS= VGS, ID= 250µA<br>~~a~~<br>~~eG~~|
|gfs<br>~~Rs~~<br>~~es~~|Forward Transconductance<br><br>~~es~~||–––<br>~~|~~<br><br>~~es~~<br>~~Gs~~|29<br>~~|~~<br><br>~~GO OO~~<br>~~es~~<br>~~nd~~|–––<br><br>~~OO~~<br>~~es~~|S<br><br>~~es~~|VDS= 15V, ID= 12.5A<br>~~a~~<br><br>~~es~~|
|IDSS<br>~~eS~~|Drain-to-Source Leakage Current<br>~~eS~~||–––<br>~~Gs ~~<br>~~eS~~|–––<br> ~~nd~~<br>~~eS~~|1.0<br>~~eS~~|*~~Po~~|VDS= 30V, VGS= 0V<br>~~Po~~|
||||–––<br>~~eS~~|–––<br>~~eS~~|5.0<br>~~eS~~||VDS= 30V, VGS= 0V, TJ= 55°C<br>~~Po~~|
|IGSS<br>~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~|~~ee~~|VGS= -20V<br>~~ee~~|
||||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~||VGS= 20V<br>~~ee~~|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~||–––<br>~~ee~~|52|78|nC|ID= 12.5A<br>VDS= 15V<br>VGS= 10V, See Fig. 6<br>~~©~~|
|Qgs<br>~~ee~~<br>~~es~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~ee~~|8.7<br>~~ee~~|–––|||
|Qgd<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br>~~ee~~|–––|||
|td(on)<br>~~es~~<br>~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~ee~~|15<br>~~ee~~|–––||VDD= 15V<br>ID= 1.0A<br>RG= 6.0Ω<br>RD= 15Ω,<br>~~©~~<br>~~@~~|
|tr<br>~~ee~~<br>ee<br>~~es~~|Rise Time<br>~~ee~~<br>~~a~~<br>||–––<br>~~ee~~<br>~~a~~<br><br>~~ee~~|10<br>~~a~~<br>|–––|||
|td(off)<br>~~ee~~<br>ee<br>~~es~~|Turn-Off Delay Time<br>~~ee~~<br>~~a~~<br>~~ee~~||–––<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|55<br>~~a~~<br>~~ee~~|–––|||
|tf<br>ee<br>~~es~~<br>~~es~~|Fall Time<br>~~a~~<br>||–––<br>~~a~~<br><br>~~ee~~|47<br>~~a~~<br>|–––|||
|Ciss<br>~~es~~<br>~~es~~<br>es|Input Capacitance||–––<br>~~ee~~|2240|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz, See Fig. 5<br>~~@~~<br>®|
|Coss<br>~~es~~<br>es<br>es|Output Capacitance||–––|1100|–––|||
|Crss<br>es<br>es|Reverse Transfer Capacitance||–––|150|–––|||
|**Source-Drain Ratings and Characteristics**<br>es<br>®<br>~~esee~~||||||||
|~~es~~|**Parameter**<br>~~ee~~|**Min. **<br>~~ee~~||**Typ. **<br>~~ee~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**|
|IS<br>~~es~~<br>~~pf~~|Continuous Source Current<br>(Diode Conduction)<br>~~ee~~<br>~~pf~~ne|~~ee~~||~~ee~~|2.3<br>~~ee~~|~~ee~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G|
|ISM<br>~~pf~~|Pulsed Source Current<br>(Body Diode)<br>~~pf~~ne||||50|||
|VSD<br>~~pf~~<br>a|Diode Forward Voltage<br>~~pf~~ne<br>rs|–––<br>re||–––<br>es|1.1|V|TJ= 25°C, IS= 2.3A, VGS= 0V|
|trr<br>~~pf~~<br>a|Reverse Recovery Time<br>~~pf~~ ne<br>rs|–––<br>re||52<br>es|78|ns|TJ= 25°C, IF= 2.3A|



## **Source-Drain Ratings and Characteristics** 

|**Parameter**<br>**Min. Typ. Max.**<br>IS<br>Continuous Source Current<br>(Diode Conduction)<br>ISM<br>Pulsed Source Current<br>(Body Diode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.1<br>trr<br>Reverse Recovery Time<br>–––<br>52<br>78<br>50<br>2.3<br>~~esee~~<br>~~pf~~ ne<br>a<br>rsrees|**Units**<br>V<br>ns|**Conditions**<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>TJ= 25°C, IS= 2.3A, VGS= 0V<br>TJ= 25°C, IF= 2.3A|= 0V<br>G||S<br>D|
|---|---|---|---|---|---|



Notes: © Repetitive rating;  pulse width limited by @ Starting TJ = 25°C, L = 13mH max. junction temperature. RG = 25Ω, IAS = 8.9A. (See Figure 15) 

© Repetitive rating;  pulse width limited by max. junction temperature. @ Pulse width ≤ 300µs; duty cycle ≤ 2%. 

When mounted on FR4 Board,  t ≤10 sec 

www.irf.com 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>TAT 1”<br> 100 Z ee  100 LL Zee Zaat<br>4.5V 4.5V<br>/, Vy 4<br> 10 PP Yi 20µs PULSE WIDTHT  = 25J °C  10 7 A  A 20µs PULSE WIDTHT  = 150J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>2.0<br>1000 ID = 12.5A<br>TJ = 25°C<br>PR) 1.5 A  THCDE<br>TJ = -55°C | |fot| 7<br>TJ = 150°C<br>ea HE EATOVOADS>ZcA 010<br>100 1.0<br>Ao TTT<br>P ee<br>| ft ft | hf tT 0.5<br>PF VDS = 25V | Recent<br>10 4.0 Ppp 5.0 6.0 pe 20µs PULSE WIDTH7.0 8.0 9.0 0.0 CTU T T VGS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) °<br>T  , Junction TemperatureJ (  C)<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**----- Start of picture text -----**<br>
4000 20<br>VGS = 0V, f = 1MHz ID = 12.5A<br>CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 VVDSDS == 24V 15V<br>3000 ee  e e eeee eee ee<br>ee | CO<br>ee || 12 PTT<br>N ee Ciss PA<br>2000<br>SS NN 8 poteVA<br>Coss<br>1000 CP CTI Hit Atti t<br>4<br>mL = Fi JIA li FOR TEST CIRCUIT fi |<br>0 a Crss ell 0 Annuma@nee e SEE FIGURE        eee 13<br> 1  10  100 0 20 40 60 80 100<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>° BY R<br>T  = 25  CJ DS(on)<br>ao T  = 150  CJ ° O E D<br> 100  100<br>| A A |<br>100us<br> 10 a| | | | | | |  10 PET a 1ms |<br> T TCJ = 25  C= 150  C° ° 10ms<br> 1 oePEE PT | PE Et V      = 0 V GS  1 i  Single Pulse Nmeiii e melt<br>0.0 1.0 2.0 3.0 4.0 5.0 0.1  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**==> picture [442 x 479] intentionally omitted <==**

**----- Start of picture text -----**<br>
14 Coe 100 0000<br>12<br>80<br>SEE A LLUUIM TAT TCT TT<br>10<br>eSa A<br>60<br>8<br>PEEPSNee Ao \<br>6<br>40<br>s l<br>a<br>4 a ee 20 PATNI<br>ptt ETI TTT<br>2<br>| | | | ttt| | ft tT tNtt PUCATTDie SS TTCTT<br>0 a 0 Pe<br>25 50 75 100 125 150 0.01 0.1 1 10 100 [A]<br>T   , Case TemperatureC (  C)° Time (sec)<br>Fig 10. Typical Power Vs. Time<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature<br> 100<br>D = 0.50 a as es es nt<br> 10 0.20<br>0.10<br>0.05<br>cl es ee —— | |<br>0.02<br> 1<br>0.01<br>PDM<br>SINGLE PULSE<br>(THERMAL RESPONSE) t1<br>e et a<br>0.1 a t2<br>Notes:<br>ee | 1. Duty factor D = t   / t1 2<br>0.01 a ee 2. Peak T J= P DM x  Z thJA + TA<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>Power ( W)<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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**==> picture [208 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.20<br>TLL<br>0.16 Sa see<br>Saeeeeeeen<br>0.12 PetTPer<br>0.08 Py ey<br> V      = 10V<br>GS<br>ee<br> V      = 4.5VGS<br>0.04<br>Poesy<br>SS Sennn5)<br>a<br>————-a<br>0.00<br>0 10 20 30 40 50<br>I   , Drain Current (A)D<br>(Ω)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.012<br>0.010<br>ID = 12.5A<br>0.008<br>0.006<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Drain Current 

**Fig 13.** Typical On-Resistance Vs. Gate Voltage 

**==> picture [435 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 1000<br>ID<br>PEL LL ELLE TT [TTT] TOP 4.0A<br>7.1A<br>MEE 800 4 BOTTOM 8.9A<br>2.5 EEE NaSEEe<br>P oNN ID  T = 250µA 600 RAR+<br>2.0 P T TEE NKEEL EL PNPSSEo<br>PTT TTT ENONI 400 NON EE<br>1.5 P EELE EEL ENE NUNC<br>200<br>PEEL EEL PSN<br>1.0<br>PEE 4} S8--<br>0<br>-60 -20 20 60 100 140 180 25 50 75 100 125 150<br>TJ , Temperature (°C) Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>VGS(th) ,  Variace (V)<br>**----- End of picture text -----**<br>


Typical Threshold Voltage Vs.Temperature 

**Fig 15.** Maximum Avalanche Energy Vs. Drain Current 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

**==> picture [372 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIM ee INCHES eee MILLIMETERS<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>ae E 6 5 H ===EE D .189 .1968 4.80 5.00<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>Ca 1 2 3 4 e. >} e .050  BASIC  =} 1.27  BASIC 44<br>i fr<br>e1 .025  BASIC 0.635  BASIC<br>Tord [J<br>T oT T s ee H .2284 .2440 5.80 ee 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>HH aoa L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>| | [ J [|<br>e1 K x 45°<br>A<br>4 -O C he<br>y<br>0.10 [.004]<br>an 8X b n A1 iveau X S L 8X L 8X c of<br>0.25 [.010]  C A B 7<br>fe} J TT]<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>Toa<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255] | a<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE. | iii<br>00g<br>3X 1.27 [.050] oe<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

**==> picture [204 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
XXXX<br>INTERNATIONAL F7101<br>RECTIFIER<br>LOGO<br>m e<br>**----- End of picture text -----**<br>


DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [198 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>Oo Oo ~ ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [176 x 78] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04 

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