# Power MOSFET, N Channel, 30 V, 10 A, 0.01 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2097997/)

**URL**: https://novapart.co/products/SI4410DYTRPBF/power-mosfet-n-channel-30-v-10-a-001-ohm-soic
**SKU**: SI4410DYTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.01ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2097997/)

PD - 95168 

## Si4410DYPbF 

## HEXFET Power MOSFET 

N-Channel  MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 

## **Description** 

This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.  The low onresistance and low gate charge inherent to this technology make this  device ideal for low voltage or battery driven power conversion applications 

The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. 

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A<br>A<br>S 1 8 D VDSS = 30V<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D R  = 0.0135Ω<br>DS(on)<br>Top View<br>**----- End of picture text -----**<br>


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SO-8<br>**----- End of picture text -----**<br>


**Parameter Max. Units** ~~ee I Rs~~ VDS ~~ee~~ Drain- Source Voltage 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±10 es ~~es~~ ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±8.0 A ~~—Rs~~ IDM ~~es~~ Pulsed Drain Current ~~©~~ ±50 PD @TA = 25°C Power Dissipation 2.5 ~~spes~~ PD @TA = 70°C ~~en~~ Power Dissi ~~or~~ pation ~~© pH~~ 1.6 Linear Derating Factor 0.02 W/°C ~~esQR~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns ~~Rs ee ©eG~~ EAS Single Pulse Avalanche Energy 400 mJ ~~es © Q~~ VGS Gate-to-Source Voltage ± 20 V ~~esQR RsQR~~ TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C 

## **Thermal Resistance** 

**Parameter Max. Units** ~~es~~ RθJA Maximum Junction-to-Ambient 50 °C/W ~~eeen©)~~ www.irf.com 1 

09/22/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|es|ee|ee|rs|ee|ee|es||
|---|---|---|---|---|---|---|---|
|es<br>~~Re~~|**Parameter**<br>ee<br>||**Min. **<br>rs|**Typ. **<br>ee|**Max.**<br>ee<br>~~GO~~|**Units**<br>es<br>~~GO~~|**Conditions**|
|V(BR)DSS<br>es <br>QO<br>~~Re~~|Drain-to-Source Breakdown Voltage<br> ee<br>QO<br>~~ee~~||30<br>rs <br>QO<br>~~GG~~|–––<br> ee <br>QO<br>~~GG~~|–––<br> ee <br>QO<br>~~GO~~<br>~~GG~~|V<br> es<br>QO<br>~~GO~~<br>~~GG~~|VGS= 0V, ID= 250µA<br>QO|
|∆V(BR)DSS/∆TJ<br>~~Re~~<br>~~Re~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~|~~||––– <br>~~GG~~<br>~~|~~|0.029<br>~~GG~~|–––<br>~~GO~~<br>~~GG~~<br>~~|~~|V/°C<br>~~GO~~<br>~~GG~~<br>~~|~~|Reference to 25°C, ID= 1mA<br>~~|~~|
|RDS(on)<br>~~Re ~~<br>~~a~~<br>~~Re~~|Static Drain-to-Source On-Resistance<br> ~~ee~~<br>~~a~~<br>~~|~~||––– <br>~~GG~~<br>~~a~~<br>~~|~~|0.0100.0135<br>~~GG~~<br>~~a~~|0.0100.0135<br>~~GO~~<br>~~GG~~<br>~~a~~<br>~~|~~|Ω<br>~~GO~~<br>~~GG~~<br>~~a~~<br>~~|~~|VGS= 10V, ID= 10A<br>~~a~~<br>~~|~~|
||||––– <br>~~a~~<br>~~|~~|0.015 <br>~~a~~|0.020<br>~~a~~<br>~~|~~||VGS= 4.5V, ID= 5.0A<br>~~a~~<br>~~|~~|
|VGS(th)<br>~~Re~~|Gate Threshold Voltage<br>~~|~~<br>ss||1.0<br>~~|~~<br>ss|–––<br>ss|–––<br>~~|~~<br>ss<br>~~GO~~|V<br>~~|~~<br>~~GO~~|VDS= VGS, ID= 250µA<br>~~|~~|
|gfs<br>~~Re~~<br>~~QO~~|Forward Transconductance<br>~~|~~<br>~~QO~~||–––<br>~~|~~<br>~~QO~~|35<br>~~QO~~|–––<br>~~|~~<br>~~QO~~<br>~~GO~~|S<br>~~|~~<br>~~QO~~<br>~~GO~~|VDS= 15V, ID= 10A<br>~~|~~<br>~~QO~~|
|IDSS<br>~~eS~~|Drain-to-Source Leakage Current<br>~~eS~~||–––<br>~~eS~~|–––<br>~~eS~~|1.0<br>~~GO~~<br>~~eS~~|~~GO~~<br>*~~Po~~|VDS= 30V, VGS= 0V<br>~~Po~~|
||||–––<br>~~eS~~|–––<br>~~eS~~|25<br>~~eS~~||VDS= 30V, VGS= 0V, TJ= 55°C<br>~~Po~~|
|IGSS<br>~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~|~~ee~~|VGS= -20V<br>~~ee~~|
||||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~||VGS= 20V<br>~~ee~~|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~||–––<br>~~ee~~|30|45|nC|ID= 10A<br>VDS= 15V<br>VGS= 10V, See Fig. 10<br>~~©~~|
|Qgs<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~ee~~|5.4<br>~~ee~~|–––|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~SEE~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~SEE~~||–––<br>~~ee~~<br>~~ee~~<br>~~SEE~~|6.5<br>~~ee~~<br>~~SEE~~|–––|||
|td(on)<br>~~ee ~~<br>~~SEE~~|Turn-On Delay Time<br>~~ee~~<br> ~~ee~~<br>~~SEE~~||–––<br>~~ee~~<br>~~SEE~~|11<br>~~ee~~<br>~~SEE~~|–––||VDD= 25V<br>ID= 1.0A<br>RG= 6.0Ω<br>RD= 25Ω,<br>~~©~~<br>~~@~~|
|tr<br>~~SEE~~<br>ee<br>~~ee~~|Rise Time<br>~~SEE~~<br>~~**ee**~~<br>||–––<br>~~SEE~~<br>~~**ee**~~<br>~~ee~~|7.7<br>~~SEE~~<br>~~**ee**~~|–––|||
|td(off)<br>~~SEE~~<br>ee<br>~~ee~~<br>~~ee~~|Turn-Off Delay Time<br>~~SEE~~<br>~~**ee**~~<br>~~ee~~<br>||–––<br>~~SEE~~<br>~~**ee**~~<br>~~ee~~<br>|38<br>~~SEE~~<br>~~**ee**~~<br>|–––|||
|tf<br>ee<br>~~ee~~<br>~~ee~~|Fall Time<br>~~**ee**~~<br>~~ee~~<br>||–––<br>~~**ee**~~<br>~~ee~~<br>|44<br>~~**ee**~~<br>|–––|||
|Ciss<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br> ~~ee~~<br>~~ee~~<br>||–––<br>~~ee~~<br>~~ee~~<br>|1585<br>~~ee~~<br>|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz, See Fig. 9<br>~~@~~|
|Coss<br> <br>~~ee~~<br>~~ee~~<br>ee|Output Capacitance<br> ~~ee~~<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~ee~~|739<br>~~ee~~<br>~~ee~~|–––|||
|Crss<br><br>~~ee~~<br>ee|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||–––<br>~~ee~~<br>~~ee~~|106<br>~~ee~~<br>~~ee~~|–––|||
|**Source-Drain Ratings and Characteristics**<br>~~ee~~<br>ee<br>~~esee~~||||||||
|~~es~~<br>~~ee~~|**Parameter**<br>~~ee~~<br>~~eeeee~~|**Min. **<br>~~ee~~<br>~~eee~~||**Typ. **<br>~~ee~~<br>~~eee~~|**Max.**<br>~~ee~~<br>~~eee~~|**Units**<br>~~ee~~<br>~~eee~~|**Conditions**|
|IS<br>~~es~~<br>~~ee~~|Continuous Source Current<br>(Diode Conduction)<br>~~ee~~<br>~~eeeee~~<br>~~ee~~|~~ee~~<br>~~eee~~<br>~~ee~~||~~ee~~<br>~~eee~~<br>~~ee~~|2.3<br>~~ee~~<br>~~eee~~<br>~~ee~~|~~ee~~<br>~~eee~~<br>~~ee~~<br>ee<br>~~Ee~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G<br>~~Ee~~|
|ISM<br>~~ee~~<br>~~Ee~~|Pulsed Source Current<br>(Body Diode)<br>~~ee eee~~<br>~~ee~~<br>~~Ee~~|~~eee~~<br>~~ee~~<br>~~Ee~~||~~eee~~<br>~~ee~~<br>~~Ee~~|50<br>~~eee~~<br>~~ee~~<br>~~Ee~~|||
|VSD<br>~~Ee~~<br>a|Diode Forward Voltage<br>~~Ee~~<br>rs|–––<br>~~Ee~~<br>re||0.7<br>~~Ee~~<br>es|1.1<br>~~Ee~~|V<br>~~Ee~~|TJ= 25°C, IS= 2.3A, VGS= 0V<br>~~Ee~~|
|trr<br>a|Reverse Recovery Time<br>rs|–––<br>re||50<br>es|80|ns|TJ= 25°C, IF= 2.3A|



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** ~~es~~ IS ~~ee~~ Continuous Source Current MOSFET symbol D 2.3 (Diode Conduction) showing  the ~~ee~~ ISM Pulsed Source Current ~~eee~~ integral reverse G 50 ~~ee~~ (Body Diode) ee p-n junction diode. S ~~Ee~~ VSD Diode Forward Voltage ––– 0.7 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V trr Reverse Recovery Time ––– 50 80 ns TJ = 25°C, IF = 2.3A a rs re es 

Repetitive rating;  pulse width limited by Starting TJ = 25°C, L = 8.0mH max. junction temperature. RG = 25Ω, IAS = 10A. (See Figure 15) Pulse width ≤ 300µs; duty cycle ≤ 2%. © ISD ≤ 23 A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C When mounted on FR4 Board,  t ≤10 sec 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V a| 8.0V<br>7.0V6.0V a 7.0V6.0V<br>5.5V 5.5V<br>5.0V Hi a 5.0V a a |<br>BOTTOM 4.5V aSSl BOTTOM 4.5V IT1 yea ee ll<br> 100 a) Zev  100 alllail<br>e/a _ 77<br>4.5V<br>4.5V<br>myoe faA= iee ee RE)Se |1aCee ee|lll<br>P ZA 20µs PULSE WIDTHT  = 25J °C gt 20µs PULSE WIDTHT  = 150J °C<br> 10  10<br>0.1 Z A  1 NE  10  100 0.1 [A] ©  1 [l]  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>ID =<br>T  = 25°CJ<br>ee T  = -55°CJ ee<br>1.5<br>a— —— —————s— — T  = 150°CJ CELEaur<br>AF | ell<br>100 f~ \| 1.0 Pa<br>| | — rr<br>2S A ee ee eee LT |<br>eeaes ee es ee EEE<br>0.5<br>es ee ee ee<br> V     = 25VDS<br>10 p p  20µs PULSE WIDTH A 0.0 EE E VGS = 10V<br>4 8 12 16 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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2400<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>2000 an CCrssoss == CCgdds + Cgd<br>Rt<br>SS Ciss<br>1600 PING TTT<br>1200 NE el<br>Coss<br>a e eli<br>800<br>a l l<br>ee Salil<br>400 Ne ell<br>ee<br>Crss<br>a<br>0 el<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>a a<br> 10 fear<br>T  = 150  CJ °<br>l<br>T  = 25  CJ °<br>H AH<br> 1<br>Say An) ee<br>2<br>V      = 0 V GS<br>0.1 aFL titi tit |<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [203 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>ID = 10A<br>VDS = 24V<br>VDS = 15V<br>HS<br>16<br>Pi tt fy NE<br>Pt tT tT t T ELpL<br>12<br>y, VA<br>Pt tT te LAL]<br>8<br>rT | | | | Wiel td<br>rT TTA Td<br>4 PT TA TT<br>|_|4<br>AT] | | | yd<br>0 Vi {| | ttt tf<br>0 10 20 30 40 50<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>AE AR<br> 100<br>ZL SMUT ST 10us ll<br>Cr 100us<br> 10<br>ll<br>1ms<br>alien  T TCJ = 25  C= 150  C° ° ces W t<br> 1 e  Single Pulse etiaec al i en 10ms a<br>0.1  1  10  100  1000<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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10.0 PAE EE 100 nL a<br>8.0 80<br>IN<br>6.0 60<br>FECES ooo<br>4.0 Pt N 40 \<br>Pitt EE EA PLN UI LA |<br>2.0 Pt  ty TN 20 a a A<br>tT ey TN PUTIN I<br>Cry COTPT<br>0.0 Pt tT TT] tT tt 0 Pe<br>25 50 75 100 125 150 0.01 0.1 1 10 100 [A]<br>T   , Case TemperatureC (  C)° Time (sec)<br>Fig 10. Typical Power Vs. Time<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature<br> 100<br>D = 0.50<br>e n eran lll<br> 10 e<br>0.20<br>0.10<br>0.05<br> 1 6 eer tr rr er<br>0.02<br>oh 0.01 ert oe ie oe PDM<br>0.1 e SINGLE PULSE t t1 t2<br>(THERMAL RESPONSE)<br>a Notes:<br>| 1. Duty factor D = t   / t1 2<br>e e 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>Power ( W)<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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0.20 0.03<br>ee<br>0.16 Pt TTT? 0.02 LEE<br>0.12<br>eee Sacceee PNT \<br> I     = 10AD<br>0.08<br>PH  V      = 10VGS 0.01 PEN<br>Pet _— =<br> V      = 4.5VGS<br>0.04<br>ie es er<br>Pot A<br>0.00 peer A C 0.00 LE EE<br>0 10 20 30 40 50 3 4 5 6 7 8 9 10 [A]<br>I   , Drain Current (A)D V       , Gate-to-Source Voltage (V)GS<br>Fig 12. Typical On-Resistance Vs. Drain Fig 13. Typical On-Resistance Vs. Gate<br>Current Voltage<br>3.0 1000<br>ID<br>TOP 4.5A<br>8.0A<br>TPE) 0 800 keRRRE BOTTOM 10A<br>: NER<br>2.5 i<br>SNE | ARE<br>600<br>ee NO ENEee Eee<br>I    =250µAD 400<br>2.0 ENG<br>IN EP ARRAS<br>200<br>PEELE t NG GREE<br>LENGE EFSAAA<br>N TSS<br>1.5 PEELE EEE ED) A = 0 ESE ESS<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150<br>T   , Junction Temperature (°C)J Starting T  , Junction TemperatureJ (  C)°<br>(Ω) (Ω)<br>DS(on) DS(on)<br>R           ,  Drain-to-Source On Resistance<br>R           ,  Drain-to-Source On Resistance<br>GS(th)<br>V          ,  Variance ( V)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


Typical Threshold Voltage Vs.Temperature 

**Fig 15.** Maximum Avalanche Energy Vs. Drain Current 

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## **SO-8 Package Outline** 

**==> picture [425 x 341] intentionally omitted <==**

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Dimensions are shown in millimeters (inches)<br>INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>_7_ALFLA fyee b .013 .020 fp 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>Z 6 H EE D .189 .1968  EE 4.80  EE 5.00  =<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>| |p—ars ———— e .050  BASIC 1.27  BASIC<br>1b ee > e 1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>ob ——— L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>| [|  [ [ft<br>~ e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>tL 8X b ver A1 A G L 8X L 8X c mi<br>fe] 0.25 [.010]  = @ C TT A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENS ION: MILLIMETER<br>3.  DIMENS IONS  ARE SHOWN IN MILLIMET ERS [INCHES].<br>4.  OUT LINE CONFORMS  TO JEDEC OUT LINE MS -012AA.<br>5   DIMENS ION DOES  NOT INCLUDE MOLD PROT RUSIONS.<br>     MOLD PROTRUS IONS  NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENS ION DOES  NOT INCLUDE MOLD PROT RUSIONS.     MOLD PROTRUS IONS  NOT TO EXCEED 0.25 [.010]. r [dont] naeiii<br>7   DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBST RATE.<br>O00<br>3X 1.27 [.050] aH be<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOS FET) 

DATE CODE (YWW) 

P =  DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR XXXX WW =  WEEK INTERNAT IONAL F7101 A =  ASS EMBLY S ITE CODE RECTIFIER LOT CODE LOGO ~~ee~~ 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [213 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>eo 6 6 © |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [188 x 85] intentionally omitted <==**

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


- NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

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