SI4166DY-T1-GE3

Power MOSFET, N Channel, 30 V, 30.5 A, 3900 µohm, SOIC, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; P
MSL: MSL 1 - Unlimited
SVHC: Lead (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 6.5W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 30.5A
Drain Source On State Resistance: 3900µohm
Gate Source Threshold Voltage Max: 1.2V

Delivery and price
Units per pack	5000
Price	0.452 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 22, 2026