SI3439KU6-TP

Dual MOSFET, N and P Channel, 20 V, 20 V, 750 mA, 520 mA, 0.25 ohm

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Manufacturer: MICRO COMMERCIAL COMPONENTS (MCC)
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: DFN1010B
Operating Temperature Max: 150°C
Power Dissipation N Channel: 350mW
Power Dissipation P Channel: 350mW
Drain Source Voltage Vds N Channel: 20V
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id N Channel: 750mA
Continuous Drain Current Id P Channel: 520mA
Drain Source On State Resistance N Channel: 0.25ohm
Drain Source On State Resistance P Channel: 0.85ohm

Delivery and price
Units per pack	10000
Price	0.038 €
Current stock	10+
Lead time	30 days

Datasheet

**SI3439KU6** 

## **Features** 

- ESD Protected Up To 2KV (HBM) 

- Trench LV MOSFET Technology 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(Note 1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

## **Dual N&P-Channel MOSFET** 

## **Maximum Ratings** 

- Operating Junction Temperature Range : -55°C to +150°C 

- Storage Temperature Range: -55°C to +150°C 

- Thermal Resistance: 360°C/W Junction to Ambient[(Note 2) ] 

|**Parameter**|**Parameter**|**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Total Power Dissipation(Note 4)||PD|0.35|W|
|**N-Channel MOSFET**|||||
|Drain-Source Voltage||VDS|20|V|
|Gate-Source Volltage||VGS|±10|V|
|Continuous Drain Current|TA=25℃|ID|0.75|A|
||TA=100℃||0.47||
|Pulsed Drain Current(Note 3)||IDM|3|A|
|**P-Channel MOSFET**|||||
|Drain-Source Voltage||VDS|-20|V|
|Gate-Source Volltage||VGS|±10|V|
|Continuous Drain Current|TA=25℃|ID|-0.52|A|
||TA=100℃||-0.33||
|Pulsed Drain Current(Note 3)||IDM|-2.08|A|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

## **Internal Structure and Marking Code** 

**==> picture [289 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
(6,7)       (3,8)<br>D D<br>1,4. Source<br>2,5.Gate<br>3,6,7,8. Drain 49<br>G,(2) G,(5)<br>S,(1) S,(4)<br>PIN1<br>**----- End of picture text -----**<br>


## DFN1010B-6 

**==> picture [192 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>A<br>E A3<br>e A1<br>e b<br>1 2 3<br>H<br>E2<br>7 8<br>D2 K<br>L 6 5 4<br>**----- End of picture text -----**<br>


||DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|---|
|DIM|INCHES||MM||NOTE|
||MIN|MAX|MIN|MAX||
|A|0.012<br>|0.016|0.31|0.40||
|A1|0.000<br>|0.002|0.00|0.05||
|A3|0.005||0.127||TYP.|
|b|0.004<br>|0.008|0.10|0.20||
|D|0.037<br>|0.041|0.95|1.05||
|E|0.037<br>|0.041|0.95|1.05||
|e|0.014||0.350||TYP.|
|D2|0.011<br>|0.015|0.27|0.37||
|E2|0.010<br>|0.014|0.25|0.35||
|H|0.021||0.530||TYP.|
|L|0.004<br>|0.008|0.10|0.20||
|K|0.008|-|0.20|-||



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## **N-Channel ELECTRICAL CHARACTERISTICS (Ta=25** � **unless otherwise specified)** 

|**Parameter**|**Symbol**|**Test   conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|20|||V|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|0.35|0.7|1.2|V|
|Zero Gate Voltage Drain Current|IDSS|VDS=20V, VGS=0V|||1.0|µA|
|Gate-body Leakage Current|IGSS|VGS=± 10V, VDS=0V|||±10|µA|
|Drain-Source On-Resistance|RDS(on)|VGS=4.5V, ID=0.5A||173|250|mΩ|
|||VGS=2.5V, ID=0.4A||250|340||
|||VGS=1.8V, ID=0.2A||405|950||
|Gate Resistance|Rg|f=1 MHz, Open drain||44||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||0.75|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=0.5A|||1.2|V|
|Reverse Recovery Time|trr|IF=0.1A, dIF/dt=100A/μs||5.5||ns|
|Reverse Recovery Charge|Qrr|||0.8||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=16V,VGS=0V, f=1MHz||33||pF|
|Output Capacitance|Coss|||10|||
|Reverse Transfer Capacitance|Crss|||5.6|||
|Total Gate Charge|Qg|VDS=10V,VGS=4.5V,ID=0.1A||1.2||nC|
|Gate-Source Charge|Qgs|||0.2|||
|Gate-Drain Charge|Qgd|||0.2|||
|Turn-on  Delay Time|td(on)|VDD=10V,VGS=4.5V<br>ID=0.5A, RG=10�||5.4||ns|
|Turn-on Rise Time|tr|||5.2|||
|Turn-off  Delay Time|td(off)|||10.5|||
|Turn-off Fall Time|tf|||5.7|||



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**P-Channel ELECTRICAL CHARACTERISTICS (Ta=25** 

**unless otherwise specified)** 

**Parameter Symbol Test   Conditions Min Typ Max Unit** ~~ee~~ **Static Characteristics** ~~CO~~ -20 ~~Drain-Source Breakdown Voltage | Vienoss | Vos"OV;le=25008~~ ± 10 ~~GateSouwe tage Curent ls Vos VeI0V a~~ -1 ~~Zao Gale Yotage Dan Curent tos Vor -2VVarO ak~~ -0.35 -0.62 -1.2 ~~va Gates Vote am Vor~~ Voesg=-4.5V, Ip=-0.5A 580 850 855 1200 Drain-Source On-Resistance Rpscon) ~~|Ves=-2-5V, Ip=-0.3A pf~~ 1350 2000 f 85 ~~GateResstnce RINVoeg=-1.8V,OpensIp=-0.2A~~ **Diode Characteristics** ~~Oe~~ -0.65 ~~Contmuis Bay Dose Curent~~ -1.2 ~~Diode Forward Vottge VsoIOVesOs~~ 32 3.1 ~~PeeteI-=-1A,age dl-/dt=20A/us ne~~ **Dynamic Characteristics** Input Capacitance Ciss 36 Output Capacitance Coss Vps= -10V,Ves=0V,f=1MHz 12 pF 6.4 1.4 ~~a ToolCoecwee —~~ 1 0.4 0.3 ~~Gatebrancrage Oy a~~ 3.2 ~~—~~ 18.6 ID 8.3 Turn-Off Delay Time tavor Re=30, =-0.5A ns Turn-Off Fall Time t 21.4 

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## **Curve Characteristics (N-Channel)** 

**==> picture [236 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1 - Typical Output Characteristics<br>5<br>VGS=4V,3.5V<br>4<br>V GS =3V<br>3<br>V GS =2.5V<br>2<br>V GS =2V<br>1<br>V GS =1.5V<br>0<br>0 1 2 3<br>Drain To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [249 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3 - RDS(ON) � VGS<br>1000<br>ID=0.25A<br>800<br>600<br>400<br>200<br>0<br>0 1 2 3 4 5 6<br>Gate To Source Voltage (V)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


**Fig. 5 - Capacitance Characteristics** 

**==> picture [249 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Ciss<br>Coss<br>10<br>Crss<br>1<br>0 4 8 12 16 20<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [241 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2 - Transfer Characteristics<br>6<br>VDS=5V<br>4<br>25°C<br>150°C<br>2<br>0<br>0 1 2 3 4<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 4 - RDS(ON)** — **ID** 

**==> picture [247 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>400<br>VGS=2.5V<br>300<br>200<br>VGS=4.5V<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0<br>Drain Current(A)<br>）<br>Drain-Source on Resistance(mΩ<br>**----- End of picture text -----**<br>


**Fig. 6 - Gate Charge** 

**==> picture [248 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.5<br>V DS =10V<br>4.0 I D =0.1A<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0.0 0.5 1.0 1.5 2.0<br>Gate Charge(nC)<br>Gate-Source Voltage(V)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics (N-Channel)** 

**Fig. 7 - Nomalized Threshold Voltage** 

**==> picture [254 x 417] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4<br>1.2<br>ID=250uA<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>Tj-Junction Temperature ( ℃ )<br>Fig.9 - IS — VSD<br>2.4<br>V GS =0V<br>1<br>150 ℃ 25 ℃<br>0.1<br>0.4 0.6 0.8 1.0 1.2<br>Source To Drain Voltage (V)<br>VGS(th)-Threshold Voltage Nomalized<br>Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [246 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.8-Normalized On Resistance Characteristics<br>1.8<br>V =4.5V<br>GS<br>1.6 ID=0.5A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>Tj-Junction Temperature(°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


**Fig. 10 - Drain Current** 

**==> picture [260 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 25 50 75 100 125 150<br>TA Temperature ( ℃ )<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig.11 - PD Dissipation** 

**==> picture [235 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.40<br>0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics (N-Channel)** 

**==> picture [545 x 489] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12 - Safe Operation Area<br>10<br>R Limited<br>DS(on)<br>1<br>100us<br>1ms<br>0.1 3ms<br>10ms<br>DC<br>100ms<br>0.01<br>TJ(MAX)=150 ℃<br>T A =25°C<br>Single Pulse<br>1E-3<br>0.1 1 10 100<br>Drain-Source Voltage (V)<br>Fig. 13 -Normalized Transient Thermal Impedance<br>10<br>D=Ton/T In descending order<br>TJ,PK=TA+PdmꞏZθjAꞏRθjA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>RθjA=360°C/W<br>1<br>0.1<br>0.01<br>Single<br>1E-3 PDM<br>T ON<br>T<br>1E-4<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100<br>Pulse Width (s)<br>Drain Current(A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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## **Curve Characteristics (P-Channel)** 

**==> picture [260 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1 - Typical Output Characteristics<br>-3.0<br>VGS=-6V,-5V,-4V<br>-2.5<br>TJ=25 ℃<br>-2.0<br>VGS=-3.0V<br>-1.5<br>VGS=-2.5V<br>-1.0<br>-0.5 V GS =-1.8V<br>0.0<br>0 -1 -2 -3 -4 -5<br>Drain To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [252 x 420] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3 - RDS(ON) — VGS<br>2000<br>ID=-500mA<br>1600<br>1200<br>800<br>400 25 ℃<br>0<br>0 -2 -4 -6 -8 -10<br>Gate To Source Voltage (V)<br>Fig. 5 - Capacitance Characteristics<br>1000<br>100<br>Ciss<br>C oss<br>10<br>C rss<br>1<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20<br>Drain To Source Voltage (V)<br>Drain-Source On-Resistance (mΩ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [260 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2 - Transfer Characteristics<br>-3.0<br>VDS=-5V<br>-2.5<br>100°C<br>25°C<br>-2.0<br>-1.5<br>-1.0<br>-0.5<br>0.0<br>0 -2 -4 -6 -8<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [249 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4 - RDS(ON) — ID<br>2.0<br>1.6<br>VGS=-1.8V<br>1.2<br>0.8 VGS=-2.5V<br>VGS=-4.5V<br>0.4<br>0.0<br>0.0 -0.4 -0.8 -1.2 -1.6 -2.0<br>Drain Current(A)<br>Drain-Source on Resistance (Ω)<br>**----- End of picture text -----**<br>


Fig. 6 - Gate Charge 

**==> picture [247 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
-4.5<br>VDS=-10V<br>-4.0 I D =-1A<br>-3.5<br>-3.0<br>-2.5<br>-2.0<br>-1.5<br>-1.0<br>-0.5<br>0.0<br>0.0 0.4 0.8 1.2 1.6 2.0<br>Gate Charge(nC)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics (P-Channel)** 

Fig. 7 - Nomalized Threshold voltage 

**==> picture [245 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>ID=-250uA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj-Junction Temperature ( ℃ )<br>VGS(th)-Threshold Voltage Nomalized<br>**----- End of picture text -----**<br>


Fig. 8 - Normalized On Resistance Characteristics 

**==> picture [242 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>VGS=-4.5V<br>1.4 I D =-0.5A<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj-Junction Temperature(°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


Fig. 9 - IS — VSD 

**==> picture [255 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
-3<br>VGS=0V<br>-1<br>100°C<br>25°C<br>-0.1<br>-0.2 -0.4 -0.6  -0.8  -1.0  -1.2 -1.4<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig.10 - Drain Current** 

**==> picture [274 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
-0.6<br>-0.5<br>-0.4<br>-0.3<br>-0.2<br>-0.1<br>0<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Drain Current(A)<br>**----- End of picture text -----**<br>


**Fig.11 - PD Dissipation** 

**==> picture [235 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.40<br>0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics (P-Channel)** 

## **Fig.12 - Safe Operation Area** 

**==> picture [426 x 375] intentionally omitted <==**

**----- Start of picture text -----**<br>
-10<br>-1 RDS(on) Limited<br>10µS<br>100µS<br>DC<br>-0.1 300µS<br>TJ(MAX)=150℃ 1mS<br>TA=25℃ 10mS<br>Single Pulse<br>-0.01<br>-0.1 -1 -10 -100<br>Drain-Source Voltage (V)<br>Fig.13 - Normalized Transient Thermal Impedance<br>10<br>D=TTJ,PKon=T/TA+PDM.ZθJA.RθJA In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>1 RθJA=360℃/W<br>0.1<br>Single Pulse<br>0.01 PDM<br>TON<br>T<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse Width(s)<br>Drain Current (A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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## **Ordering Information** 

|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel:5Kpcs/Reel|



## *****IMPORTANT NOTICE***** 

_**Micro Commercial Components Corp**_ . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp**_ . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp**_ . and all the companies whose products are represented on our website, harmless against all damages. _**Micro Commercial Components Corp**_ . products are sold subject to the general terms and conditions of commercial sale, as published at 

**https://www.mccsemi.com/Home/TermsAndConditions.** 

## *****LIFE SUPPORT***** 

MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. 

## *****CUSTOMER AWARENESS***** 

Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. **MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources** . MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

MCCSEMI.COM 

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Rev.4-1-05212024

Updated at April 29, 2026

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