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SI1040X-T1-GE3
Dual MOSFET, Complementary N and P Channel, 8 V, 8 V, 430 mA, 430 mA, 0.5 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:430mA; Drain Source Voltage Vds:8V; On Resistance Rds(on):0; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: TrenchFET Series
- Qualification: -
- Transistor Case Style: SC-89
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 174mW
- Power Dissipation P Channel: 174mW
- Drain Source Voltage Vds N Channel: 8V
- Drain Source Voltage Vds P Channel: 8V
- Continuous Drain Current Id N Channel: 430mA
- Continuous Drain Current Id P Channel: 430mA
- Drain Source On State Resistance N Channel: 0.5ohm
- Drain Source On State Resistance P Channel: 0.5ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.303 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 23, 2026