# Power MOSFET, P Channel, 100 V, 17 A, 0.2 ohm, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:1505544/) **URL**: https://novapart.co/products/SFP9540/power-mosfet-p-channel-100-v-17-a-02-ohm-to-220 **SKU**: SFP9540 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3480 **Stock**: 10+ ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-17A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipa ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 132W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220 | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 17A | | Drain Source On State Resistance | 0.2ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1505544/) **SFP9540** ## **Advanced Power MOSFET** ## **FEATURES** - n Avalanche Rugged Technology - n Rugged Gate Oxide Technology - n Lower Input Capacitance - n Improved Gate Charge - n 175oC Opereting Temperature - n Extended Safe Operating Area - n Lower Leakage Current : -10 µA (Max.) @ VDS = -100V - n Low RDS(ON) : 0.161 Ω (Typ.) |BVDSS = -100 V| |---| |RDS(on)= 0.2
Ω| |ID = -17 A| |**TO-220**
**2**
**1**
Ee| |**3**| |**1.Gate 2. Drain 3. Source**| ## **Absolute Maximum Ratings** |**Symbol**
SS|**Characteristic**
++_§__+—
po|**Value**
++_§__+—|**Units**
++_§__+—
ee| |---|---|---|---| |VDSS
SS|Drain-to-Source Voltage
++_§__+—
po|-100
++_§__+—
ee|V
++_§__+—
ee
ee| |ID
SS
ee|Continuous Drain Current (TC=25
oC)
++_§__+—
po
ee|-17
++_§__+—
ee|A
++_§__+—
ee| ||Continuous Drain Current (TC=100
oC)
ee|-12
ee|| |IDM
ee
——|Drain Current-Pulsed
O1
ee|-68
ee
re|A| |VGS
ee
—
——
—__—_______|Gate-to-Source Voltage
ee
—__—_______ee|±30
ee
re
ee|V| |EAS
—
——
—__—_______
—}—________|Single Pulsed Avalanche Energy
O
2
—__—_______ee
—}—________ee|578
re
ee
ee|mJ
ee| |IAR
——
—__—_______
—}—________
nn|Avalanche Current
O1
—__—_______ee
—}—________ee|-17
re
ee
ee
ee|A
ee| |EAR
——
—__—_______
—}—________
nn|Repetitive Avalanche Energy
O1
—__—_______ee
—}—________ee|13.2
re
ee
ee
ee|mJ
ee| |dv/dt
—__—_______
—}—________
nn|Peak Diode Recovery dv/dt
O
3
—__—_______ee
—}—________ee|-6.5
ee
ee
ee
ee|V/ns
ee
ee| |PD
—}—________
nn|Total Power Dissipation (TC=25
oC)
Linear Derating Factor
—}—________ee
es|132
0.88
ee
ee
es
ee|W
W/
oC
ee
es
ee| |TJ, TSTG
TL
nn|Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
from case for 5-seconds
1/8”|- 55 to +175
300
ee
ee|oC
ee| ## **Thermal Resistance** |RθJC
**Symbol**|Junction-to-Case
**Characteristic**|--
**Typ.**|1.14
**Max.**|oC/W
**Units**| |---|---|---|---|---| |RθCS|Case-to-Sink|0.5|--|| |RθJA|Junction-to-Ambient|--|62.5|| Rev. C **P-CHANNEL POWER MOSFET** ## **SFP9540** ## **Electrical Characteristics** (TC=25[o] C unless otherwise specified) |ee|eesGs|Gs|esCs|Cs|es|| |---|---|---|---|---|---|---| |**Symbol**
ee
ee
ee|**Characteristic**
eesGs
es|**Min.**
Gs
es
es|**Typ.**
esCs
es
es|**Max. **
Cs
es
esGs|**Units**
es
es
Gs|**Test Condition**
es| |BVDSS
ee
ee
ee
ee|Drain-Source Breakdown Voltage
eesGs
es
es|-100
Gs
es
es
ee|--
esCs
es
es
**G**sGe|--
Cs
es
esGs
GeGs|V
es
es
Gs
Gs|VGS=0V,ID=-250µA
es| |∆BV/∆TJ
ee
ee
ee|Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
es
es
esOs|--
es
es
ee
Os|-0.11
es
es
**G**sGe
e|--
es
esGs
GeGs
ee|V/
oC
es
Gs
Gs|ID=-250µA**_See Fig 7_**
es| |VGS(th)
ee
ee|Gate Threshold Voltage
es
esOs|-2.0
es
ee
Os|--
es
**G**sGe
e|-4.0
esGs
GeGs
ee|V
Gs
Gs|VDS=-5V,ID=-250µA| |IGSS
ee
ee|Gate-Source Leakage , Forward
es
esOs
ee
ee|--
ee
Os
ee
ee|--
**G**sGe
e
ee
ee|-100
GeGs
ee
ee|nA
Gs
ee|VGS=-20V
ee
Po| ||Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
ee
ee|--
ee
ee|--
ee
ee|100
ee||VGS=20V
ee
Po| |IDSS
~~a~~
~~ee~~
a|Drain-to-Source Leakage Current
ee
~~a~~
~~ee~~
|--
ee
~~a~~
|--
ee
~~a~~
es
|-10
~~a~~
es
|µA
~~a~~
~~ee~~
es
|VDS=-100V
Po
~~a~~
| |||--
~~a~~
~~ee~~
|--
~~a~~
~~ee~~
es
|-100
~~a~~
~~ee~~
es
||VDS=-80V,TC=150
oC
~~a~~
~~ee~~
| |RDS(on)
~~ee~~
a
a|Static Drain-Source
On-State Resistance
~~ee~~

|--
~~ee~~

Gs
|--
~~ee~~
es

Gs
|0.2
~~ee~~
es

GO
|Ω
~~ee~~
es

GO|VGS=-10V,ID=-8.5A
O
4
~~ee~~
| |gfs
aes
a
a|Forward Transconductance
es

|--
es
Gs

ee
|9.5
es
es
Gs

ee
|--
es
es
GO

ee
|S
es
es
GO
ee|VDS=-40V,ID=-8.5A
O
4
es| |Ciss
Coss
a
a
ae
a|Input Capacitance
Output Capacitance
ee
ee

|--
--
Gs
ee
ee
ee
ee

es
|240
1180
Gs
ee
ee
ee
ee

es
|1535
360
GO
ee
ee
ee

|pF
GO
ee|VGS=0V,VDS=-25V,f =1MHz
**_See Fig 5_**| |Crss
ae
a
ae|Reverse Transfer Capacitance
ee

|--
ee
ee
es

Geee
|83
ee
ee
es

ee
|125
ee

||| |td(on)
ae
a
ae
ae|Turn-On Delay Time

es

|--
ee

es
es
Geee

Gs
|14
ee

es
es
ee

es
|40

es

|ns|VDD=-50V,ID=-17A,
RG=12
**_See Fig 13_**
O
4
O
5
Ω| |tr
ae
ae
a|Rise Time
ee

|--
Geee
ee
Gs

Gs
|22
ee
ee
es

es
|55
ee

||| |td(off)
ae
ae
a
a|Turn-Off Delay Time

ee

|--
Geee

Gs
ee
Gs

Geee
|45
ee

es
ee
es

ee
|100

ee
||| |tf
ae
a
a
a|Fall Time

es

|--
Gs

Gs
es
Geee

ee
|26
es

es
es
ee

ee
|60

es||| |Qg
a
a
~~a~~|Total Gate Charge
ee

|--
Geee
ee
ee

~~ee~~
|43
ee
ee
ee

|54|nC|VDS=-80V,VGS=-10V,
ID=-17A
**_See Fig 6 & Fig 12_**
O
4
O
5| |Qgs
a
~~a~~|Gate-Source Charge
ee
|--
ee
ee
~~ee~~

ee|7.4
ee
ee
|--||| |Qgd
~~a ~~|Gate-Drain( “Miller “ ) Charge
~~ee~~|--
~~ee~~
~~ee~~
ee|17.8
~~ee~~|--||| ## **Notes ;** O[1] Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O2 L=3.0mH, IAS=-17A, VDD=-25V, RG=27Ω*, Starting TJ =25[o] C O3 ISD <_-17A, di/dt <_ 450A/µs, VDD <_BVDSS , Starting TJ =25[o] C O4 Pulse Test : Pulse Width = 250µs, Duty Cycle <_ 2% O5 Essentially Independent of Operating Temperature **SFP9540** ## **P-CHANNEL POWER MOSFET** **==> picture [430 x 531] intentionally omitted <==** **----- Start of picture text -----**
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V 10 [1]
10 [1] - 5.5 V
- 5.0 V
Bottom : - 4.5 V
175 oC
25 oC
10 [0]
@ Notes :
10 [0] 1. VGS = 0 V
@ Notes : 2. VDS = -40 V
1. 250 2. TC = 25 µ s Pulse TestoC - 55 oC 3. 250 µ s Pulse Test
| 10 [-1] OER
10 Yr [-1] 10 [0] 10 [1] 2 4 6 8 10
-VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.6
0.5
10 [1]
0.4
VGS = -10 V
0.3
0.2 10 [0] 175 oC
@ Notes :
0.1 =) a [A] 25 oC 1. VGS = 0 V
VGS = -20 V @ Note : TJ = 25 [o] C 2. 250 µ s Pulse Test
0.0 10 [-1]
0 8 16 24 32 40 48 56 64 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
2000
Ciss= Cgs+ Cgd ( Cds= shorted )
1500 C iss CCossrss= C= Cdsgd+ Cgd 10 VDS = -80 VVDSV = -50 VDS = -20 V
1000 C oss
@ Notes : 5
1. VGS = 0 V
2. f = 1 MHz
500 C rss
@ Notes : ID =-17 A
0 0
10 [0] 10 | [1] / 0 10 20 30 40 50
-VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
, Drain Current [A]-ID , Drain Current [A]-ID
]
Ω
, [
DS(on)
R
Drain-Source On-Resistance
, Reverse Drain Current [A]
DR
-I
Capacitance [pF]
, Gate-Source Voltage [V]
GS
-V
**----- End of picture text -----**
**P-CHANNEL POWER MOSFET** ## **SFP9540** **Fig 8. On-Resistance vs. Temperature** **==> picture [431 x 531] intentionally omitted <==** **----- Start of picture text -----**
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2 2.5
2.0
1.1
1.5
1.0
1.0
0.9 @ Notes : @ Notes :
1. V 2. IGSD = -250 = 0 V µ A 0.5 1. V 2. IGSD = -8.5 A = -10 V
0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [ [o] C] TJ , Junction Temperature [ [o] C]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
20
Operation in This Area
is Limited by R DS(on)
10 [2] 16
ico neae
0.1 ms
1 ms
12
10 [1] 10 ms
DC
@ Notes : 8
1. TC = 25 [o] C
10 [0] Pa 2. T 3. Single PulseJ = 175 [o] C 4
10 [-1] aBe e 0
10 [0] 10 [1] 10 [2] 25 50 75 100 125 150 175
-VDS , Drain-Source Voltage [V] Tc , Case Temperature [ [o] C]
Fig 11. Thermal Response
10 [0]
D=0.5
@ Notes :
0.2 1. Z θ JC (t)=1.14 o C/W Max.
2. Duty Factor, D=t1 /t2
10 [-1] 0.1 3. TJM -TC =PDM *Z θ JC (t)
0.05 P.DM
0.02 t1.
0.01 t2.
single pulse
10 [-2] AAPA ‘a!
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
t1 , Square Wave Pulse Duration [sec]
, (Normalized) , (Normalized)
-BVDSS RDS(on)
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]D
-I , Drain Current [A]-ID
(t) , Thermal Response
Z JC θ
**----- End of picture text -----**
**Fig 10. Max. Drain Current vs. Case Temperature** **SFP9540** ## **P-CHANNEL POWER MOSFET** **Fig 12. Gate Charge Test Circuit & Waveform** **==> picture [439 x 496] intentionally omitted <==** **----- Start of picture text -----**
“ Current Regulator ”
Same Type VGS
50K Ω as DUT
Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd
DUT
-3mA
U— R1 R2 ,
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout td(on) t on tr td(off) t off tf
Vin VDD
( 0.5 rated VDS ) Vin
RG 10%
DUT
-10V
90%
a Vout fea SS
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS LL EAS = ----12 LL IAS2 --------------------BVBVDSS -- VDSS DD
Vary tp to obtain ID t p Time
required peak ID
VDD VDS (t)
RG C VDD ID (t)
DUT
-10V IAS
a t p BVDSS |
**----- End of picture text -----**
**P-CHANNEL POWER MOSFET** ## **SFP9540** **Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** **==> picture [309 x 464] intentionally omitted <==** **----- Start of picture text -----**
+
VDS
DUT
--
I S
L
Driver
VGS
RG Compliment of DUT(N-Channel) VDD
VGS • dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
4
Gate Pulse Width
VGS D = --------------------------Gate Pulse Period 10V
( Driver )
aey
Body Diode Reverse Current
I S IRM
( DUT )
di/dt
Ae
IFM , Body Diode Forward Current
Vf
VDS t t
( DUT )
Body Diode VDD
Forward Voltage Drop TT
Body Diode Recovery dv/dt
**----- End of picture text -----**
**==> picture [64 x 7] intentionally omitted <==** **----- Start of picture text -----**
TRADEMARKS
**----- End of picture text -----**
**==> picture [439 x 623] intentionally omitted <==** **----- Start of picture text -----**
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DOES NOTASSUMEANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
**----- End of picture text -----**
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