# Power MOSFET, P Channel, 150 V, 18 A, 0.2 ohm, TO-3P, Through Hole ![Product image](https://novapart.co/image/farnell:1505541/) **URL**: https://novapart.co/products/SFH9154/power-mosfet-p-channel-150-v-18-a-02-ohm-to-3p **SKU**: SFH9154 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.8700 **Stock**: 10+ ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipa ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 204W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-3P | | Drain Source Voltage Vds | 150V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 18A | | Drain Source On State Resistance | 0.2ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1505541/) **SFH9154** ## **Advanced Power MOSFET** ## **FEATURES** - I Avalanche Rugged Technology I Rugged Gate Oxide Technology I Lower Input Capacitance I Improved Gate Charge I Extended Safe Operating Area I 150oC Operating Temperature I Lower Leakage Current : 10 µA (Max.) @ VDS = -150V I Lower RDS(ON) : 0.140 Ω (Typ.) |BVDSS = -150 V| |---| |RDS(on)= 0.2Ω| |ID = -18 A| || |**TO-3P**| |**2**
**1**| |**3**| |**1.Gate 2. Drain 3. Source**| ## **Absolute Maximum Ratings** |**Symbol**
a|**Characteristic**|**Value**|**Units**| |---|---|---|---| |VDSS
a|Drain-to-Source Voltage
|-150|V| |ID

a|Continuous Drain Current (TC=25
oC)
pT|-18|A| ||Continuous Drain Current (TC=100
oC)
pO|-11.5|| |IDM
a|Drain Current-Pulsed①
pO|-72|A| |VGS
a
a|Gate-to-Source Voltage
pO|±30|V| |EAS
a|Single Pulsed Avalanche Energy②|1215|mJ| |IAR
a|Avalanche Current①|-18|A| |EAR
a|Repetitive Avalanche Energy①
ee|20.4
ee|mJ
ee| |dv/dt|Peak Diode Recovery dv/dt
③|-5.0|V/ns| |PD|Total Power Dissipation (TC=25
oC)
Linear Derating Factor|204
1.63|W
W/
oC| |TJ, TSTG
TL|Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂from case for 5-seconds|- 55 to +150
300|oC| ## **Thermal Resistance** |RθJC
**Symbol**|Junction-to-Case
**Characteristic**|--
**Typ.**|0.61
**Max.**|oC/W
**Units**| |---|---|---|---|---| |RθCS|Case-to-Sink|0.24|--|| |RθJA|Junction-to-Ambient|--|40|| 1 **P-CHANNEL POWER MOSFET** **SFH9154** **Electrical Characteristics** (TC=25℃ unless otherwise specified) |**Symbol**
aDR|**Characteristic**
DR|**Min.**
ee|**Typ.**
ee|**Max. **|**Units**|**Test Condition**| |---|---|---|---|---|---|---| |BVDSS
aDR
OO
a|Drain-Source Breakdown Voltage
DR
OO
ee|-150
ee
OO
ee|--
ee
OO
ee|--
OO|V
OO|VGS=0V,ID=-250μA
OO| |ΔBV/ΔTJ
a|Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
ee|--
ee|-0.16
ee|--|V/℃|ID=-250μA**_See Fig 7_**| |VGS(th)
a
a|Gate Threshold Voltage
ee
sO|-2.0
ee
sO
ee|--
ee
sO
ee|-4.0
sO
e|V
sO
ee|VDS=-5V,ID=-250μA
sO| |IGSS
e
p|Gate-Source Leakage , Forward
ee
po|--
e
ee
o|--
e
ee
o|-100
e
e|nA
ee
ee
Pp
~~ee~~|VGS=-30V
e
Pp| ||Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
ee
po|--
e
ee
o
~~ee~~|--
e
ee
o
~~ee~~|100
e
e
~~ee~~||VGS=30V
e
Pp
eee| |IDSS
p
~~ee~~|Drain-to-Source Leakage Current
po
~~ee~~|--
ee
o
~~ee~~
~~ee~~|--
ee
o
~~ee~~
~~ee~~|-10
e
~~ee~~
~~ee~~|μA
ee
Pp
~~ee~~
~~ee~~|VDS=-150V
Pp
~~ee~~
eee| |||--
~~ee~~
~~ee~~|--
~~ee~~
~~ee~~|-100
~~ee~~
~~ee~~||VDS=-120V,TC=125℃
~~ee~~
eee| |RDS(on)|Static Drain-Source
On-State Resistance|--
~~ee~~|0.14 0.2
~~ee~~|0.14 0.2
~~ee~~|Ω
~~ee~~|VGS=-10V,ID=-9.0A④
eee| |gfs
a
a|Forward Transconductance
|--
eeee
|11
ee
|--
ee
|Ω|VDS=-40V,ID=-9.0A
④| |Ciss
Coss
aee
aee
a|Input Capacitance
Output Capacitance
ee
ee
|--
--
ee
eeee
ee
eeeee
|400
2290
ee
ee
ee
eee
|3000
600
ee
ee
ee
eee
|pF
eee|VGS=0V,VDS=-25V,f =1MHz
**_See Fig 5_**| |Crss
aDe|Reverse Transfer Capacitance
De|--
eeeee
De|200
eee
De|300
eee
De||| |td(on)
a|Turn-On Delay Time|--|20|45|ns|VDD=-75V,ID=-18A,
RG=6.2Ω
**_See Fig 13_**④⑤| |tr
aDe|Rise Time
De|--
De|40
De|90
De||| |td(off)
aDe|Turn-Off Delay Time
De|--
De|80
De|170
De||| |tf
De
a|Fall Time
De|--
De
ee|40
De|90
De||| |Qg
a
a|Total Gate Charge
ee|--
ee
ee|100
ee|130|nC|VDS=-120V,VGS=-10V,
ID=-18A
**_See Fig 6 & Fig 12_**④⑤| |Qgs
a|Gate-Source Charge|--
ee|20|--||| |Qgd
~~a~~|Gate-Drain(＂Miller＂) Charge|--|40|--||| ## **Source-Drain Diode Ratings and Characteristics** |**Symbol**|**Characteristic**|**Min.**|**Typ.**|**Max. **|**Units**|**Test Condition**| |---|---|---|---|---|---|---| |IS|Continuous Source Current|--|--|-18|A|Integral reverse pn-diode
in the MOSFET| |ISM|Pulsed-Source Current①|--|--|-72||| |VSD|Diode Forward Voltage④|--|--|-5.0|V|TJ=25℃,IS=-18A,VGS=0V| |trr|Reverse Recovery Time|--|200|--|ns|TJ=25℃,IF=-18A
diF/dt=100A/μs④| |Qrr|Reverse Recovery Charge|--|1.5|--|μC|| ## **Notes ;** - ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature - ② L=5mH, IAS=-18A, VDD=-50V, RG=27Ω, Starting TJ =25℃ - ③ ISD≤-18A, di/dt≤450A/μs, VDD≤BVDSS , Starting TJ =25℃ - ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% - ⑤ Essentially Independent of Operating Temperature 2 **P-CHANNEL POWER MOSFET** **SFH9154** **==> picture [113 x 9] intentionally omitted <==** **----- Start of picture text -----**
Fig 1. Output Characteristics
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**==> picture [119 x 9] intentionally omitted <==** **----- Start of picture text -----**
Fig 2. Transfer Characteristics
**----- End of picture text -----**
**==> picture [428 x 518] intentionally omitted <==** **----- Start of picture text -----**
-VGS 10 [2]
Top : 15 V @ Notes :
10 [2] 10 V 8.0 V 7.0 V 1. 250 2. TC = 25 µ s Pulse TestoC ——
6.0 V
5.5 V
5.0 V 10 [1]
Bottom : 4.5 V
10 [1]
150 oC @ Notes :
10 [0] 1. VGS = 0 V
25 oC 2. VDS = 40 V
3. 250 µ s Pulse Test
- 55 oC
10 [0] 10 [-1]
10 [-1] Pam 10 [0] 10 [1] 0 y 2 4 e 6 8 10
-VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.24
10 [2]
0.20
VGS = -10 V 10 [1]
0.16
| ee
VGS = -20 V
10 [0]
0.12 @ Notes :
A | | 150 oC 1. VGS = 0 V
@ Note : TJ = 25 [o] C 25 oC 2. 250 µ s Pulse Test
0.08 10 [-1]
0 15 30 45 60 75 90 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
5000 15
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
4000 C iss Crss= Cgd VDS = -30 V
10 VDS = -75 V
3000 VDS = -120 V
C oss fe e S
2000
C rss @ Notes : 5
1. VGS = 0 V
1000 2. f = 1 MHz
@ Notes : ID = -18 A
0 0
10 [0] 10 [1] 0 20 40 60 80 100
-VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
, Drain Current [A]-ID , Drain Current [A]-ID
]
Ω
, [
DS(on)
R
, Reverse Drain Current [A]
DR
Drain-Source On-Resistance
-I
Capacitance [pF]
, Gate-Source Voltage [V]
GS
-V
**----- End of picture text -----**
3 **P-CHANNEL POWER MOSFET** **SFH9154** **==> picture [438 x 531] intentionally omitted <==** **----- Start of picture text -----**
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2 2.0
1.1 1.6
1.0
1.2
0.9 @ Notes : @ Notes :
1. VGS = 0 V 0.8 1. Vgs = -10V
2. ID = 250 µ A 2. Id = -9A
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ [o] C] TJ , Junction Temperature [ [o] C]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
10 [3] 20
Operation in This Area
is Limited by R DS(on)
10 [2] 15
0.1 ms
1 ms
10 ms
10 [1] DC 10
@ Notes :
1. TC = 25 [o] C
10 [0] 2. TJ = 150 [o] C 5
3. Single Pulse
10 [-1] 0
10 [0] 10 [1] 10 [2] 25 50 75 100 125 150
Fa m e Pa
-VDS , Drain-Source Voltage [V] Tc , Case Temperature [ [o] C]
Fig 11. Thermal Response
10 [0]
e D=0.5 ee
ae
0.2
@ Notes :
10 [-1] Se 0.1 1. Z θ JC(t) = 0.61 oC/W Max.
0.05 2. Duty Factor, D = t1/t2
0.02 3. TJM-TC = PDM*Z θ JC(t)
10 [-2] Z 0.01 F single pulse = wa PDM t1 fr a
t2
10 20 [-5] 10 [-4] eee 10 [-3] 10 [-2] eee 10 [-1] 10 [0] 10 [1]
t1 , Square Wave Pulse Duration [sec]
, (Normalized)
, (Normalized)
DSS
DS(on)
R
-BV
Drain-Source Breakdown Voltage Drain-Source On-Resistance
, Drain Current [A]-ID , Drain Current [A]D
-I
(t) , Thermal Response
ZJC θ
**----- End of picture text -----**
4 **P-CHANNEL POWER MOSFET** **SFH9154** **Fig 12. Gate Charge Test Circuit & Waveform** **==> picture [439 x 515] intentionally omitted <==** **----- Start of picture text -----**
* Current Regulator ”
Same Type VGS
50K Ω as DUT
Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd
DUT
-3mA
+ —> R1 R2 (
a
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout a td(on) t on tr AS td(off) t off tf
Vin VDD
( 0.5 rated VDS ) Vin
RG 10%
DUT
-10V
90%
_ Vout
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS LL EAS = ----12 LL IAS2 --------------------BVBVDSS -- VDSS DD
Vary tp to obtain ID t p Time
required peak ID
VDD VDS (t)
RG C VDD ID (t)
DUT
-10V IAS
t p BVDSS
**----- End of picture text -----**
5 **P-CHANNEL POWER MOSFET** **SFH9154** **Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** **==> picture [309 x 450] intentionally omitted <==** **----- Start of picture text -----**
+
VDS
DUT
--
I S
L
Driver
VGS
RG Compliment of DUT(N-Channel) VDD
VGS • dv/dt controlled by 밨 G
• IS controlled by Duty Factor “D”
Gate Pulse Width
VGS D = --------------------------Gate Pulse Period 10V
( Driver )
a es
Body Diode Reverse Current
I S IRM
( DUT )
di/dt
SK
IFM , Body Diode Forward Current
Vf
VDS
( DUT )
Body Diode VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
**----- End of picture text -----**
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