# Schottky Rectifier, 30 V, 4 A, Single, X3-TSN1608, 2 Pins, 570 mV

![Product image](https://novapart.co/image/farnell:3828521RL/)

**URL**: https://novapart.co/products/SDM4A30EP3-7B/schottky-rectifier-30-v-4-a-single-x3-tsn1608-2
**SKU**: SDM4A30EP3-7B
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.1170
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | X3-TSN1608 |
| Diode Configuration | Single |
| Forward Voltage Max | 570mV |
| Forward Surge Current | 32A |
| Average Forward Current | 4A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3828521RL/)

## **SDM4A30EP3** &. TT **4A SCHOTTKY BARRIER RECTIFIER SURFACE MOUNT PACKAGE** 

## **Product Summary** 

|**VRRM**|**IO**|**VF Max**|**IR Max**|
|---|---|---|---|
|30V|4A|570mV|250µA|



## **Features and Benefits** 

- Low forward voltage (VF) minimizes conduction losses and improves efficiency. 

- Reduced high-temperature reverse leakage; Increased reliability against thermal runaway failure in high temperature operation. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

The SDM4A30EP3 is a 30V 4A Schottky Barrier Rectifier that is optimized for low forward voltage drop and low leakage current, housed in a small surface mount package that occupies only 1.28mm[2] board space with very low profile. The low thermal resistance enables designers to meet design challenges of increasing efficiency while at the same time reducing board space. It is ideally suited for use in portable applications such as: 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

   - Case: X3-TSN1608-2 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: NiAu, Solderable per MIL-STD-202, Method 208 O **e4** 

- Blocking Diode 

- Boost Diode 

   - Polarity: Cathode Dot 

   - Weight: 0.0007 grams (Approximate) 

- Switching Diode 

- Reverse Protection Diode 

Device Schematic 

**==> picture [117 x 60] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin #1<br>Cathode<br>Notch<br>Anode Cathode<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|SDM4A30EP3-7B|X3-TSN1608-2|10,000/Tape &Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

Y1 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) ~~_~~ M = Month (ex: 9 = September) 

Dot Denotes Cathode Pin 

Date Code Key **Year 2018 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030** ~~——ee~~ **Code** F … I J K L M N O P R S **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D 

1 of 5 **www.diodes.com** 

SDM4A30EP3 Document number: DS40711 Rev. 3 - 2 

August 2021 © Diodes Incorporated 

**SDM4A30EP3** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>For capacitive load,or capacitive load,r capacitive load,capacitive load,itive load,tive load,ive load,e load,load,oad, deraterateate currentrrententntt by 20%.20%.0%..||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage|VRRM|30|V|
|Average Rectified Output Current (Note 6)|IO|4|A|
|Repetitive Peak Forward Current<br>(Pulse Wave = 1s, Duty Cycle = 66%)|IFRM|6|A|
|Non-Repetitive Peak Forward Surge Current 8.3ms<br>Single Half Sine-Wave Superimposed on Rated Load|IFSM|32|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Typical Thermal Resistance Junction to Ambient (Note 5)|RθJA|160|°C/W|
|Total Power Dissipation (Note 5)|PD|0.8|W|
|Typical Thermal Resistance Junction to Ambient (Note 6)|RθJA|60|°C/W|
|Total Power Dissipation (Note 6)|PD|2.1|W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Forward Voltage Drop|VF|—<br>—<br>—|355<br>400<br>480|405<br>470<br>570|mV|IF= 1.0A<br>IF= 2.0A<br>IF= 4.0A|
|Reverse Current (Note 7)|IR|—<br>—|18<br>65|100<br>250|µA|VR= 10V<br>VR= 30V|
|Junction Capacitance|CJ|—|107|—|pF|VR= 4V, f = 1.0MHz|



Notes: 5. Device mounted on FR-4 PCB, 2oz. copper, minimum recommended pad layout per http://www.diodes.com/package-outlines.html. 

6. Device mounted on FR-4 PCB, 2oz. copper, 1 inch square copper pad. 

7. Short duration pulse test used to minimize self-heating effect. 

2 of 5 **www.diodes.com** 

SDM4A30EP3 Document number: DS40711 Rev. 3 - 2 

August 2021 © Diodes Incorporated 

**SDM4A30EP3** 

**==> picture [511 x 676] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100000<br>pessecoesecoeees 10000 _ 150℃ ———<br>10<br>SS eS 125℃ ———— ee<br>ee ee ee 1000 a<br>1 85℃<br>Bee 27 4a 100 I ———<br>150℃<br>0.1 70BD 7s &,ay 6ae pee 10 ——————— ————<br>125℃<br>25℃<br>0 A Oe ee 1 e s<br>0.01 85℃<br>8S Ee eee ee es es ee<br>HA SS ee 0.1 a<br>25℃<br>0.001 TRG(au 4aSi Beneeee eee eee eae<br>-55℃ 0.01 -55℃<br>0.0001 ee eee 0.001 ed<br>0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30<br>VF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (V)<br>Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics<br>4.5<br>350<br>4<br>300<br>Note 6<br>f = 1MHz 3.5<br>250<br>3<br>200 2.5<br>ti | | | fl 2 See eni Note 5 s<br>150<br>\ 1.5 e ne<br>100<br>1<br>50<br>eee 0.5 NN<br>0 Ett | ft 0 eeN<br>0 5 10 15 20 25 30 0 25 50 75 100 125 150<br>VR, REVERSE VOLTAGE (V) TC , CASE TEMPERATURE (℃)<br>Figure 3. Typical Junction Capacitance Figure 4. DC Forward Current Derating<br>2.5<br>150<br>Note 6<br>2 125<br>100<br>1.5<br>TJ = 150℃ 75<br>1<br>0.5 LZ 50<br>25<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30<br>IF (av), AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V)<br>Figure 6.  Operating Temperature Derating<br>Figure 5. Forward Power Dissipation<br>(A)<br> LEAKAGE CURRENT (µA)<br>IR,<br>, INSTANTANEOUS FORWARD CURRENT<br>IF<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, AVERAGE RECTIFIED OUTPUT CURRENT (A)<br>IO<br>℃)<br>(W)<br>, CASE TEMPERATURE (<br>C<br>T<br>, AVERAGE FORWARD POWER DISSIPATION<br>D<br>P<br>**----- End of picture text -----**<br>


3 of 5 **www.diodes.com** 

SDM4A30EP3 Document number: DS40711 Rev. 3 - 2 

August 2021 © Diodes Incorporated 

**SDM4A30EP3** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X3-TSN1608-2** 

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**----- Start of picture text -----**<br>
A1<br>X3-TSN1608-2<br>A<br>Seating Plane Dim  Min  Max  Typ<br>——a<br>A  0.20  0.30  0.25<br>: + A1  0.00  0.02  --<br>D<br>R b  0.55  0.65  0.60<br>cI<br>D  1.56  1.64  1.60<br>E  0.76  0.84  0.80<br>k  --  --  0.282<br>E b( 2x) L3  0.25  0.35  0.30<br>L3a  0.90  1.00  0.95<br>R  --  --  0.10<br>All Dimensions in mm<br>» } TH [Lt] WW<br>L3 L3a<br>k<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X3-TSN1608-2** 

**==> picture [339 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
X2<br>PT Value<br>Dimensions<br>(in mm)<br>X  0.385<br>X1    1.035<br>aI: Y X2    1.622<br>Y    0.690<br> X<br>I X1 =<br>**----- End of picture text -----**<br>


4 of 5 **www.diodes.com** 

SDM4A30EP3 Document number: DS40711 Rev. 3 - 2 

August 2021 © Diodes Incorporated 

**SDM4A30EP3** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes        products       are        provided       subject        to       Diodes’        Standard       Terms        and       Conditions       of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

5 of 5 **www.diodes.com** 

SDM4A30EP3 Document number: DS40711 Rev. 3 - 2 

August 2021 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/sdm4a30ep3-7b/schottky-rectifier-single-4a-30v/dp/3828521RL)
---

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