SBR2U30P1-7

~~@~~ **Green** 

**SBR2U30P1** 

## **2.0A SBR SUPER BARRIER RECTIFIER POWERDI123** 

## **Features** 

- Patented Super Barrier Rectifier SBR[®] Technology 

- Ultra Low Forward Voltage Drop 

- Superior Reverse Avalanche Capability 

- Patented Interlocking Clip Design for High Surge Current Capacity 

- Patented Super Barrier Rectifier Technology 

- Soft, Fast Switching Capability 

- +150°C Operating Junction Temperature 

## **Mechanical Data** 

   - Case: POWERDI **[®]** 123 

   - Case Material:  Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Polarity Indicator: Cathode Band 

   - Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.018 grams (Approximate) 

- ±16KV ESD Protection (HBM, 3B) 

- ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge) 

- **Lead Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

POWERDI[®] 123 

Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**<br>**®**|**Packaging**|
|SBR2U30P1-7|POWERDI**®**123|3,000/Tape &Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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2U3 = Product Type Marking Code<br>2U3 YM = Date Code Marking<br>Y = Year (ex: C = 2015)<br>Hf M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017<br>ee Code T  U V  W  X  Y  Z  A  B  C D  E<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>rr Code 1  2  3 4  5 6 7  8 9 O N  D<br>YM<br>**----- End of picture text -----**<br>


_SBR and POWERDI are registered trademarks of Diodes Incorporated_ 

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SBR2U30P1 Document number: DS30706 Rev. 8 - 2 

January 2016 © Diodes Incorporated 

**SBR2U30P1** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>Forcapacitanceload, derate current by20%.||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VRM|30|V|
|RMS Reverse Voltage|VR(RMS)|21|V|
|Average Rectified Output Current(See Figure 1)|IO|2.0|A|
|Non-Repetitive Peak Forward Surge Current 8.3ms<br>SingleHalfSine-Wave Superimposed on RatedLoad|IFSM|75|A|
|Non-Repetitive Avalanche Energy<br>(TJ= +25°C,IAS= 5A,L = 8.5mH)|EAS|105|mJ|
|Repetitive Peak Avalanche Energy<br>(TP= 1µs,TJ= +25°C)|PARM|1,100|W|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance<br>Thermal Resistance Junction to Soldering (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>Thermal Resistance Junction to Ambient (Note 7)|RJS<br>RJA<br>RJA|5<br>178<br>123|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|---|---|---|---|---|---|---|
|Reverse Breakdown Voltage(Note 8)|V(BR)R|30|-|-|V|IR= 400µA|
|Forward Voltage Drop|VF|-|0.22|0.26|V|IF= 0.1A,TJ= +25°C|
|||-|0.31|0.35||IF= 1.0A,TJ= +25°C|
|||-|0.36|0.40||IF= 2.0A,TJ= +25°C|
|||-|0.12|0.15||IF= 0.1A,TJ= +125°C|
|||-|0.27|0.30||IF= 1.0A,TJ= +125°C|
|||-|0.30|0.33||IF= 2.0A,TJ= +125°C|
|Leakage Current (Note 8)|IR|-|75|150|µA|VR= 5V,TJ= +25°C|
|||-|150|400|µA|VR= 30V,TJ= +25°C|
|||-|6|15|mA|VR= 5V,TJ= +125°C|
|||-|12|20|mA|VR=30V,TJ= +125°C|



Notes: 5. Theoretical RJS calculated from the top center of the die straight down to the PCB cathode tab solder junction. 

6. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 

7. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 

8. Short duration pulse test used to minimize self-heating effect. 

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1.2 10,000 TA=100°C<br>1<br>1,000<br>TA=150°C TA= -65°C<br>0.8<br>100<br>0.6<br>10<br>0.4 TA=25°C<br>1<br>0.2 4<br>0 YA tL 0.1 a<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8<br>IF(AV), AVERAGE FORWARD CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Fig. 1  Forward Power Dissipation Fig. 2  Typical Forward Characteristics<br>1.0E+02 10,000<br>1.0E+01 TA=150°C<br>=eee<br>1.0E+00 T A =100°C 1,000<br>——— \ op<br>1.0E-01<br>TA=25°C 100<br>1.0E-02<br>——— ==<br>1.0E-03<br>10<br>== ee<br>1.0E-04<br>——— TA= -65°C eee<br>1.0E-05 = ee 1 a<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V)  VR, DC REVERSE VOLTAGE (V)<br>Fig. 3  Typical Reverse Characteristics Fig. 4  Total Capacitance vs. Reverse Voltage<br>160<br>2.5<br>150<br>Sor ee Note 4<br>140<br>2.0 Note 5<br>130<br>oeTTT ONee<br>NGPA TTT 120 TOO<br>1.5<br>FCECENNC ACE 110 SOS<br>Note 4<br>100<br>1.0<br>“ C OTA See<br>90<br>TCO ——eEE<br>80<br>0.5 [COCOA<br>70<br>PCC Hf | f | tt<br>60<br>0 CCC 0 Ht 5 10 | 15 | | 20 tt 25 30<br>0 25 50 75 100 125 150 175 200<br>(℃) VR, DC REVERSE VOLTAGE (V)<br>TA, AMBIENT TEMPERATURE (°C) Fig. 6  Operating Temperature Derating<br>Fig. 5  Forward Current Derating Curve<br>, DERATED JUNCTION TEMPERATURE (°C)<br>J<br>T<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>, INSTANTANEOUS REVERSE CURRENT (mA)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (mA)<br>IF<br>, POWER DISSIPATION (W)<br>D<br>P<br>F(AV)<br>, AVERAGE FORWARD CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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10,000<br>ET TTT TPT I<br>40 0-—~ Cecen<br>1,000<br>80 BNE, S ee ee Eeet ee eect ATE eetTT<br>Oa A, SO<br>EEN PoP Pe TEPID PT<br>60 \ 100 LUI I EU CT<br>LAE TTETT)<br>10<br>20*° PTT TNT.\ nHEESANGE A<br>PI ETE PITTI TT<br>0SaaeeNG 1 aee a a|aAR|<br>0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1,000<br>Ty, JUNCTION TEMPERATURE (°C) TP, PULSE DURATION  ( µs)uS)<br>Fig. 7 Pulse Derating Curve Fig. 8  Maximum Avalanche Power Curve<br>, MAXIMUM AVALANCHE POWER (W)<br>ARM<br>P<br>, AVALANCHE PEAK PULSE POWER  DERATING IN PERCENTAGE (%)<br>ARM<br>P<br>**----- End of picture text -----**<br>


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**SBR2U30P1** | 

## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

## **POWERDI[®] 123** 

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D<br>POWERDI [®] 123<br>E1<br>Dim  Min  Max  Typ<br>A  0.93 1.00 0.98<br>a A3 ——— A3 0.15 0.25 0.20<br>b  0.85 1.25 1.00<br>A<br>b2  1.025  1.125  1.10<br>D  1.63  1.93  1.78<br>>, [ca] ca E  3.50 3.90 3.70<br>L(2X) E1  2.60 3.00 2.80<br>L1 L  0.40 0.50 0.45<br>L1  1.25 1.40 1.35<br>L3  0.125  0.275  0.20<br>7a7 — i | All Dimensions in mm<br>b b2<br>L3 L3<br>oo E !<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

**POWERDI[®] 123** 

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X2<br>Y Y1<br>ial<br>X G X1<br>**----- End of picture text -----**<br>


|**Dimensions**<br>**G**|**Value**<br>**(in mm)**|
|---|---|
|**G**|0.65|
|**X**|1.05|
|**X1**|2.40|
|**X2**|4.10|
|**Y**|1.50|
|**Y1**|1.50|



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SBR2U30P1 Document number: DS30706 Rev. 8 - 2 

January 2016 © Diodes Incorporated 

**SBR2U30P1** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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SBR2U30P1 Document number: DS30706 Rev. 8 - 2 

January 2016 © Diodes Incorporated