# Schottky Rectifier, 45 V, 10 A, Single, PowerDI 5, 3 Pins, 470 mV

![Product image](https://novapart.co/image/farnell:3944636/)

**URL**: https://novapart.co/products/SBR10U45SP5Q-13/schottky-rectifier-45-v-10-a-single-powerdi-5-3
**SKU**: SBR10U45SP5Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.3980
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | SBR Series |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | PowerDI 5 |
| Diode Configuration | Single |
| Forward Voltage Max | 470mV |
| Forward Surge Current | 275A |
| Average Forward Current | 10A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944636/)

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## **SBR10U45SP5Q 10A SBR SUPER BARRIER RECTIFIER PowerDI5** 

## **Product Summary** 

## **Features and Benefits** 

- 100% Avalanche Tested 

|**VRRM (V)**|**IO (A)**|**VF MAX(V) @+25°C I**|**+25°C IR MAX(mA) @+25°C**|
|---|---|---|---|
|45|10|0.47|0.3|



## **Description and Applications** 

This Super Barrier Rectifier (SBR[®] ) diode has been designed to meet the stringent requirements of Automotive Applications. It is ideally suited to use as : 

- Polarity Protection Diode 

- Re-Circulating Diode 

- Switching Diode 

- Patented SBR technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications 

- Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation 

- Reduced high temperature reverse leakage; increased reliability against thermal runaway failure at high temperature 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The SBR10U45SP5Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: PowerDI[®] 5 

- Case Material:  Molded Plastic, “Green” Molding Compound.   UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- 

- Weight: 0.093 grams (Approximate) 

PowerDI5 

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Top View  Bottom View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|SBR10U45SP5Q-13|Automotive|PowerDI5|5000/Tape & Reel|
|SBR10U45SP5Q-13D|Automotive|PowerDI5|5000/Tape & Reel|



Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

S10U45S = Product Type Marking Code ait = Manufacturers’ Code Marking K = Factory Designator YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 for 2021) WW = Week Code (01 to 53) 

_SBR and PowerDI are registered trademarks of Diodes Incorporated._ 

1 of 6 **www.diodes.com** 

SBR10U45SP5Q Document number: DS36358 Rev. 4 - 2 

September 2021 © Diodes Incorporated 

**SBR10U45SP5Q** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>For capacitive load,or capacitive load,r capacitive load,capacitive load,itive load,tive load,ive load,e load,load,oad, deraterateate currentrrententntt by 20%.20%.0%..||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VRM|45|V|
|RMS Reverse Voltage|VR(RMS)|32|V|
|Average Rectified Output Current|IO|10|A|
|Non-Repetitive Peak Forward Surge Current 8.3ms<br>Single Half Sine-Wave Superimposed on Rated Load|IFSM|275|A|
|Repetitive Peak Avalanche Power (1µs, +25°C)|PARM|5630|W|
|Non-Repetitive Avalanche Energy<br>(TJ= +25°C, IAS= 12A, L = 10mH)|EAS|530|mJ|



**Thermal Characteristics** 

|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Maximum Thermal Resistance<br>Thermal Resistance Junction to Ambient (Note 5)<br>Thermal Resistance Junction to Ambient (Note 6)<br>RθJA<br>RθJA<br>73<br>31<br>°C/W<br>Storage Temperature Range<br>TSTG<br>-55 to +150<br>°C<br>~~——~~|
|---|---|---|---|---|---|---|
|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|||||||
||||||||
|**Characteristic**<br>**Symbol**|**Min**|**Typ**||**Max**|**Unit**|**Test Condition**|
|Reverse Breakdown Voltage (Note 7)<br>V(BR)R|45|—||—|V|IR= 0.3mA|
||—|0.41|0.41|—||IF= 8A, TJ= +25°C|
|Forward Voltage Drop<br>VF|—|0.44|0.44|0.47|V|IF= 10A, TJ= +25°C|
||—|0.38|0.38|—||IF= 10A,TJ= +125°C|
|Leakage Current (Note 7)<br>IR|—<br>—|0.09<br>30|0.09|0.3<br>—|mA|VR= 45V, TJ= +25°C<br>VR= 45V, TJ= +125°C|



- Notes: 5. FR-4 PCB, 2oz. Copper. Minimum recommended pad layout per http://www.diodes.com/package-outlines.html. 

   6. Polymide PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions 5.6mm x 14.4mm. 

   7. Short duration pulse test used to minimize self-heating effect. 

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SBR10U45SP5Q Document number: DS36358 Rev. 4 - 2 

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**SBR10U45SP5Q** 

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5<br>4.5<br>4<br>3.5<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 5 10 15<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 1 Forward Power Dissipation<br>100,000<br>)A<br>µ<br>(TN 10,000 T   = 150°CA<br>ER ———— = T   = 125°CA<br>R<br>UC 1,000 T   = 85°CA<br>E === === _| ==<br>S<br>R 100 =<br>E<br>V<br>ER T   = 25°CA<br>S 10<br>U ee ee ee<br>O<br>E<br>N 1<br>A ee ee<br>T<br>N SS<br>A<br>TSN 0.1 T   = -55°CA<br>I SSS —S— L E<br>, R 0.01<br>I 0 Pt 5 10 15 20 tt 25 30 35 40 45<br>V  , INSTANTANEOUS REVERSE VOLTAGE (V)R<br>Figure 3 Typical Reverse Characteristics<br>12<br>Based on Lead Temp (TL)<br>10 pp<br>.<br>aN<br>8<br>Note 9Note 9<br>6 iN ee<br>NX<br>XK<br>4<br>N ote 8ote 8<br>20 XIo>< —N\-™<br>25 50 75 100 125 150 175<br>TA, AMBIENT TEMPERATURE  ( 癈°C )<br>Figure 5 Forward Current Derating Curve<br>, POWER DISSIPATION (W)<br>D<br>P<br>, AVERAGE FORWARD CURRENT (A)<br>IF<br>, INSTANTANEOUS REVERSE CURRENT (µA)<br>IR<br>**----- End of picture text -----**<br>


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)A 100<br>(TN a ee a ll<br>E 10<br>RR e T   = 150°CA e<br>UC C T   = 125°CA nAaseA<br>D 1 T   = 85°CA<br>R<br>A<br>W<br>R<br>O 0.1<br>F<br>S<br>UO T   = 25°CA<br>EN 0.01 T   = -55°CA<br>A<br>T<br>N<br>A<br>T 0.001<br>S<br>N<br>I<br>,I F 0.0001 ay<br>a ee eee<br>0 0.15 0.3 0.45 0.6<br>V  , INSTANTANEOUS FORWARD VOLTAGE (V)F<br>Figure 2 Typical Forward Characteristics<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


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100,000<br>10,000 ll<br>f = 1MHz<br>FERN<br>1,000 psONGa EEEtee<br>100 Eh<br>Fe<br>10 a<br>=aa<br>1<br>en<br>0.1 1 10 100<br>VR, DC REVERSE VOLTAGE (V)<br>Figure 4  Total Capacitance vs. Reverse Voltage<br>150<br>No te 8te 8<br>PNas<br>125<br>LE<br>~<br>100<br>75 LENEoS<br>LTE Pee<br>5025 LEELEEEEE<br>0 -LELEL ELE<br>0 4.5 9 13.5 18 22.5 27 31.5 36 40.5 45<br>VR, DC REVERSE VOLTAGE (V)<br>Figure 6  Operating Temperature Derating<br>, DERATED AMBIENT TEMPERATURE (°C)<br>A<br>T<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

SBR10U45SP5Q Document number: DS36358 Rev. 4 - 2 

September 2021 

© Diodes Incorporated 

**SBR10U45SP5Q** 

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120 100000<br>[oTfTfT EETTT<br>100 CT | [[ETT]]<br>a<br>80 10000 A EE<br>a A OBOOOO OOOGQGQ<br>60 a<br>a Sa<br>40 1000 PEeeaeeaa eeOO OOOaOaOO O eeOOOO<br>20 a a<br>0 100<br>0 25 50 75 100 125 150 10.0 100.0 1000.0<br>TJ, JUNCTION TEMPERATURE  ( °C癈 ) tTPP, PULSE DURATION (µs), PULSE DURATION (礢TPP, PULSE DURATION (µs), PULSE DURATION (礢PP, PULSE DURATION (µs), PULSE DURATION (礢P, PULSE DURATION (µs), PULSE DURATION (礢, PULSE DURATION (µs), PULSE DURATION (礢, PULSE DURATION (礢礢<br>Figure 7 Pulse Derating Curve Figure 8 Maximum Avalanche Power<br>800700 NTT\ ETE El Single Pulse RJA = 78C/W |<br>\ RJA(t) = r(t) * RJA<br>600500 PUNEPEAR ETM ULEl T J  - T A  = P * R JA(t) ||<br>Ba ASTANA<br>400<br>300200 ANCTH ENUM FIM ETI TTI<br>a<br>100<br>0 CTHISSUE\ aDan Tl<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1, PULSE DURATION TIME (sec)<br>Figure 9 Single Pulse Maximum Power Dissipation<br>1 ESFe D = 0.7 ee ee<br>Poo D = 0.5 a ce arHST ooCT<br>D = 0.3 te<br>ee alk D = 0.9 LLL TTT<br>0.1 P| D = 0.1 PnUEedee ETE IEE ETT<br>BS<br>OE EE<br>D = 0.05<br>b oetthoeeA tet<br>RA<br>D = 0.02<br>OAH<br>0.01 ErLee LETM LUEI EEE LIE ETT<br>EAE D = 0.01<br>=e tHE EE EH<br>te D = 0.005 PIOPLETE TTT T R R  JA JA(t) = r(t) * R  = 7878°C/W癈 /W JA LLL PU<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001 EE ene Cnn Co il<br>0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Figure 10  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, MAXIMUM AVALANCHE POWER (W)<br>P<br>ARM<br>, AVALANCHE PEAK PULSE POWER DERATING PERCENTAGE (%)<br>ARM<br>P<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>, PEAK TRANSIENT POIWER (W)<br>P<br>(PK)<br>**----- End of picture text -----**<br>


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100000<br>[oTfTfT EETTT<br>CT | [[ETT]]<br>a ee<br>10000 A EE TT<br>eee<br>OO,a A OBOOOO OOOGQGQ OOO<br>a<br>ena Sa el<br>1000 aETll<br>eee<br>OOOOetl<br>PEeeaeeaa eeOO OOOaOaOO O eeOOOO OOD<br>a a<br>100<br>10.0 100.0 1000.0 10000.0<br>tTPP, PULSE DURATION (µs), PULSE DURATION (礢TPP, PULSE DURATION (µs), PULSE DURATION (礢PP, PULSE DURATION (µs), PULSE DURATION (礢P, PULSE DURATION (µs), PULSE DURATION (礢, PULSE DURATION (µs), PULSE DURATION (礢, PULSE DURATION (礢礢 )<br>Figure 8 Maximum Avalanche Power<br>, MAXIMUM AVALANCHE POWER (W)<br>P<br>ARM<br>**----- End of picture text -----**<br>


- Notes: 8. Device mounted on FR-4 substrate, 2oz copper, with minimum recommended pad layout. 9. Device mounted on FR-4 substrate, 2oz copper, with 10cm x 10cm pad layout. 

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SBR10U45SP5Q Document number: DS36358 Rev. 4 - 2 

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**SBR10U45SP5Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5** 

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E1<br>E 1/2 A1<br>ns e e ee<br>e<br>b2 D PowerDI5<br>2X b1 Dim  Min  Max  Typ<br>o [ | / Po A 1.05 1.15 1.10<br>A1  0.00 0.05 --<br>| oe LR. )  ESR A2 0.33 0.43 0.381<br>E /2 A<br>E ee b1 0.80 0.99 0.89<br>ee ee b2 1.70 1.88 1.78<br>A2 D 3.90 4.05 3.966<br>D2 --  --  3.054<br>a<br>E 6.40 6.60 6.51<br>== e --  --  1.84<br>———, [1] . oe E1 5.30 5.45 5.37<br>E2 --  --  3.549<br>E2<br>L1 L 0.75 0.95 0.85<br>L1 0.50 0.65 0.57<br>L1 W 1.10 1.41  1.255<br>All Dimensions in mm<br>W<br>D2<br>uo.id L L a<br>5°± 1°<br>10°± 1°<br>10°± 1°<br>5°± 1°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5** 

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X1<br>X2<br>—<br>=<br>C Y1<br>Y<br>+ X Tso<br>L G<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|1.840|
|**G**|0.852|
|**X**|1.400|
|**X1**|4.860|
|**X2**|860<br>1.310|
|**Y**|1.390|
|**Y1**|3.360|



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SBR10U45SP5Q Document number: DS36358 Rev. 4 - 2 

September 2021 © Diodes Incorporated 

**SBR10U45SP5Q** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/sbr10u45sp5q-13/schottky-diode-45v-10a-powerdi/dp/3944636)
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