# Schottky Rectifier, 200 V, 10 A, Single, PowerDI 5, 3 Pins, 880 mV

![Product image](https://novapart.co/image/farnell:3944632/)

**URL**: https://novapart.co/products/SBR10U200P5Q-13/schottky-rectifier-200-v-10-a-single-powerdi-5-3
**SKU**: SBR10U200P5Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.4390
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | SBR Series |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | PowerDI 5 |
| Diode Configuration | Single |
| Forward Voltage Max | 880mV |
| Forward Surge Current | 180A |
| Average Forward Current | 10A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944632/)

**SBR10U200P5Q 10A SBR SUPER BARRIER RECTIFIER PowerDI5** 

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## **Product Summary** (@ TA = +25°C) 

|**VRRM(V)**<br>**IO (A)**<br>**VF Max (V)**<br>**@ +25°C**<br>**IR Max (mA)**<br>**@ +25°C**<br>200<br>10<br>0.88<br>0.1|**VRRM(V)**<br>**IO (A)**<br>**VF Max (V)**<br>**@ +25°C**<br>**IR Max (mA)**<br>**@ +25°C**<br>200<br>10<br>0.88<br>0.1|**VRRM(V)**<br>**IO (A)**<br>**VF Max (V)**<br>**@ +25°C**<br>**IR Max (mA)**<br>**@ +25°C**<br>200<br>10<br>0.88<br>0.1|**VRRM(V)**<br>**IO (A)**<br>**VF Max (V)**<br>**@ +25°C**<br>**IR Max (mA)**<br>**@ +25°C**<br>200<br>10<br>0.88<br>0.1|
|---|---|---|---|
|**VRRM(V)**|**IO (A)**|**VF Max (V)**<br>**@ +25°C**|**IR Max (mA)**<br>**@ +25°C**|
|200|10|0.88|0.1|



## **Features and Benefits** 

- Ultra Low Forward Voltage Drop 

- Excellent High Temperature Stability 

- Patented Super Barrier Rectifier (SBR[®] ) Technology 

- Soft, Fast Switching Capability 

- +175°C Operating Junction Temperature 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The SBR10U200P5Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

## **Description & Applications** 

Packaged in the compact thermally efficient PowerDI[®] 5 package, provides low VF and low reverse leakage at high temperatures. 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: PowerDI5 

It is ideal for use in the following applications: 

- Bridge Diodes 

- Freewheeling Diodes 

- Blocking Diodes 

- Reverse Protection Diodes 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Polarity: See Diagram 

- Weight: 0.093 grams (Approximate) 

PowerDI5 

**LEFT PIN BOTTOM SIDE RIGHT PIN HEAT SINK Note:   Pins Left & Right must be electrically connected at the printed circuit board.** 

Top View 

Bottom View 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|SBR10U200P5Q-13|Automotive|PowerDI5|5,000/Tape & Reel|
|SBR10U200P5Q-13D|Automotive|PowerDI5|5,000/Tape & Reel|



Notes: 

   1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

PowerDI5 S10U200 = Product Type Marking Code **S 1 0 U 2** 0 0 **0** = Manufacturers’ Code Marking YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 for 2021) Y Y WYYWWK W K WW = Week Code (01 to 53) K = Factory Designator 

_SBR and PowerDI are registered trademarks of Diodes Incorporated._ 

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**SBR10U200P5Q** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>For capacitive load,or capacitive load,r capacitive load,capacitive load,itive load,tive load,ive load,e load,load,oad, deraterateate currentrrententntt by 20%.20%.0%..||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VRM|200|V|
|Average Rectified Output Current|IO|10|A|
|Non-Repetitive Peak Forward Surge Current 8.3ms<br>Single Half Sine-Wave Superimposed on Rated Load|IFSM|180|A|
|Repetitive Peak Avalanche Power(1µs,+25°C)|PARM|3,000|W|



|**Thermal Characteristics**(Note 9)||||||||
|---|---|---|---|---|---|---|---|
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Typical Thermal Resistance Junction to Ambient(Note 5)<br>RJA<br>70<br>°C/W<br>Typical Thermal Resistance Junction to Case(Note 5)<br>RJC<br>14<br>°C/W<br>Typical Thermal Resistance Junction to Ambient(Note 6)<br>RJA<br>20<br>°C/W<br>Typical Thermal Resistance Junction to Case(Note 6)<br>RJC<br>3<br>°C/W<br>Operating Temperature Range                                     Reverse Mode<br>DC Forward Mode(Note 7)<br>TJ<br>-65 to +175<br>≤200<br>°C<br>Storage Temperature Range<br>TSTG<br>-65 to +175<br>°C<br>~~——=~~||||||||
|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)||||||||
|||||||||
|**Characteristic**<br>**Symbol**|**Min**|**Typ**||**Max**|**Unit**|**Test Condition**||
||—|0.75|0.75|0.82||IF= 5A, TJ= +25°C||
|Forward Voltage Drop<br>VF|—|0.62|0.62|0.67|V|IF= 5A, TJ= +125°C||
||—|0.83|0.83|0.88||IF= 10A,TJ= +25°C||
||—|—||0.8|mA|VR= 100V, TJ= +125°C||
|Leakage Current (Note 8)<br>IR|—<br>—<br>—<br>—|—<br>—<br>—<br>0.18||10<br>4.5<br>20<br>10|µA<br>mA<br>µA<br>mA|VR= 150V, TJ= +25°C<br>VR= 150V, TJ= +125°C<br>VR= 200V, TJ= +25°C<br>VR= 200V,TJ= +125°C||
|Switching Speed<br>tRR|—|19||—|ns|IF = 0.5A, IR = 1A,<br>IRR = 0.25A(RG1)||



- Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout per http://www.diodes.com/package-outlines.html. 

6. Device mounted on FR-4 PCB with 1-inch pad layout and additional HK2 (45mm x 20mm x12mm). 

7. Max junction temperature guaranteed for 2 hours. 

8. Short duration pulse test used to minimize self-heating effect. 

   9. The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA. 

2 of 6 **www.diodes.com** 

SBR10U200P5Q Document number: DS39274  Rev. 6 - 2 

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**SBR10U200P5Q** 

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2.5 | 100 _———————————<br>T J  = 150°C<br>10<br>T J  = 125°C<br>1<br>0.1 TJ = 85°C<br>0.01 T J  = 25°C<br>0.001<br>Sa J —Fe fff a TJ = -55°C<br>0.0001<br>0.00001<br>0K ; ‘ 5 i 3 0 7 a 200 ay ee 400 ee 600 ee 800  ee 1000  ee 1200<br>lo; AVERAGE RECTIFIED OUTPUT CURRENT (A)  V F,INSTANTANEOUS FORWARD VOLTAGE(mV)<br>Fig. 1 Forward Power Dissipation<br>Fig.2 Typical Forward Characteristics<br>8 10<br>7 Po | J [| fg 9 PF ot [fT] 25 [o] C<br>8<br>6 YY NY 85 [o] C<br>7<br>125 [o] C<br>5<br>D = 0.5 6<br>Ya DC 27 a<br>4 5<br>NUK ey 150 [o] C<br>3 eee 4 ffAo<br>D = 0.1 3<br>2<br>2<br>1<br>0 Po | 10 Ze<br>0 2 4 6 8 10 0 2 4 6 8 10<br>IO, AVERAGE RECTIFIED OUTPUT  IO, AVERAGE RECTIFIED OUTPUT CURRENT<br>CURRENT (A)  (A)<br>Fig 3. Forward Power Dissipation TJ = 125 [o] C Fig 4. Forward Power Dissipation D = 0.5<br>100 10,000<br>TJ = 150°C<br>f = 1MHz<br>re THM, CTH<br>10 TJ = 125°C 1,000<br>Kf Lt ONT ty |<br>es oi<br>1 J TJ = 85°C 100 SS oo<br>i 8 1 DN [AN]<br>0.1 eee TJ = 25°C 10 |<br>——— Seer<br>0.01 ee es 1 elleet eet<br>0 50 100 150 200 0.1 1 10 100<br>VVRR, INSTANTANEOUS REVERSE VOLTAGE (V) , INSTANTANEOUS REVERSE VOLTAGE(V) VVR, DC REVERSE VOLTAGE (V)R, DC REVERSE VOLTAGE (V)<br>Fig.  3 Typical Reverse Characteristics5 Typical Reverse Characteristics  Fig. 4 Total Capacitance vs. Reverse VoltageFig. 6 Total Capacitance vs. Reverse Voltage<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>A)<br>µ<br>, INSTANTANEOUS REVERSE  CURRENT (<br>IR<br>, POWER DISSIPATION (W)PD , POWER DISSIPATION (W)PD<br>,INSTANTANSOUS FORWARD CURRENT(A)<br>IF<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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12 175<br>) Based on Lead Temperature TL 150 PTA. |<br>N [T] [(] [A] 10<br>RJA =  RJC<br>125<br>C [URRE] 8.0<br>R [D]<br>A 100<br>W<br>6.0<br>F [OR] 75<br>G [E]<br>4.0<br>R [A] 50<br>E<br>V<br>A Note 6<br>, )V 2.0 25<br>F [(A]<br>I<br>0 et LEPe~_\ 0 LLELLLELLLELLLEEL<br>0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 200<br>TL , LEAD TEMPERATURE (°C) VVR, DC REVERSE VOLTAGE (V) R, DC REVERSE VOLTAGE (V)<br>Fig. 7 Forward Current Derating Curve Fig. 8 Operating Temperature Derating Fig. 6 Operating Temperature Derating<br>120 10,000 RS OG OG GO GG OO<br>Pt TT)<br>a<br>100 a ee |<br>as<br>80 1,000 pe}TINEtt AA<br>SEES SSS tH<br>a Oe 8<br>60 EEN ESEa EEE|SSE ESE SEH<br>AA<br>40 100 ELUMse LLU LAI PSM<br>TT<br>fe ee 0 O00<br>fs es ee eeOO<br>20 SERENee aee ee a TEE<br>0 SaaeeNG 10 Ceroa<br>0 25 50 75 100 125 150 175 1 10 100 1,000 10,000<br>T JJ [, JUNCTION TEMPERA] , JUNCTION TEMPERA TURE ( °C癈 ) tTP, PULSE DURATION (µs) P, PULSE DURATION (礢 )<br>Fig. 9 Pulse Derating Curve  Fig. 10 Maximum Avalanche Power vs. Pulse Duration Fig. 8 Maximum Avalanche Power vs. Pulse Duration<br>Fig. 7 Pulse Derating Curve<br>1<br>r D=0.7 ear<br>D=0.5 ae a oh<br>Se e D=0.9 tt Ht<br>D=0.3 MT ee u n<br>D=Single Pulse<br>0.1 FTAT EH ca cA t” oolA<br>a D=0.1 SSS tasSeepai er PE EE EH EHH<br>D=0.05<br>enna ne ean cre rr ee<br>PC ha earnoaTn Cl<br>D=0.02<br>0.01 e oat)e  MNa a ae<br>D=0.01<br>ert nL TI__LIL_—oE_LEIZ_—o&L_ELETTT<br>Ff D=0.005 TT CCUET RθJA(t) = r(t) * RθJA all[I<br>RθJA = 85.7℃/W<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 11 Transient Thermal Resistance<br>, AVERAGE FORWARD CURRENT A<br>F(AV)<br>ARM<br>, AVALANCHE PEAK PULSE POWER  DERATING IN PERCENTAGE (%)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>A<br>, DERATED AMBIENT TEMPERATURE (°C)<br>T<br>,  MAXIMUM AVALANCHE POWER (W)<br>M<br>P<br>**----- End of picture text -----**<br>


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SBR10U200P5Q Document number: DS39274  Rev. 6 - 2 

February 2021 © Diodes Incorporated 

**www.diodes.com** 

**SBR10U200P5Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5** 

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**----- Start of picture text -----**<br>
E1<br>E1/2 A1<br>ad —s<br>e PowerDI5<br>Dim  Min  Max  Typ<br>a | —— A 1.05 1.15 1.10<br>b2 D<br>A1  0.00 0.05 --<br>2X b1 rd, Uh —— A2 0.33 0.43 0.381<br>b1 0.80 0.99 0.89<br>GIP, Us to<br>b2 1.70 1.88 1.78<br>E/2 A D 3.90 4.05 3.966<br>= ——_ ———<br>E D2 --  --  3.054<br>E 6.40 6.60 6.51<br>A2<br>e --  --  1.84<br>E1 5.30 5.45 5.37<br>eo = E2 --  --  3.549<br>L 0.75 0.95 0.85<br>L1 0.50 0.65 0.57<br>L1 a E2 oo W 1.10 1.41  1.255<br>7 Pd All Dimensions in mm<br>L1<br>W<br>D2<br>ag<br>L L<br>5°±<br> 1°<br> 1°<br>10°±<br>10°±<br> 1°<br>5°±<br> 1°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5** 

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X1<br>X2<br>_<br>5)<br>C Y1<br>Y<br>1<br>X<br>ae G<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|1.840|
|**G**|0.852|
|**X**|1.400|
|**X1**|4.860|
|**X2**|1.310|
|**Y**|1.390|
|**Y1**|3.360|



5 of 6 **www.diodes.com** 

SBR10U200P5Q Document number: DS39274  Rev. 6 - 2 

February 2021 © Diodes Incorporated 

**SBR10U200P5Q** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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SBR10U200P5Q Document number: DS39274  Rev. 6 - 2 

February 2021 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/sbr10u200p5q-13/schottky-diode-200v-10a-powerdi/dp/3944632)
---

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