# Schottky Rectifier, Super Barrier, 200 V, 10 A, Single, PowerDI 5, 3 Pins, 880 mV

![Product image](https://novapart.co/image/farnell:2543577/)

**URL**: https://novapart.co/products/SBR10U200P5-13/schottky-rectifier-super-barrier-200-v-10-a-single
**SKU**: SBR10U200P5-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.5190
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):10A; Diode Configuration:Single; Diode Case Style:PowerDI 5; No. of Pins:3Pins; Forward Voltage VF Max:880mV; For

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | SB |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | PowerDI 5 |
| Diode Configuration | Single |
| Forward Voltage Max | 880mV |
| Forward Surge Current | 180A |
| Average Forward Current | 10A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543577/)

**SBR10U200P5 10A SBR SUPER BARRIER RECTIFIER PowerDI5** 

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## **Product Summary** (@ TA = +25°C) 

|~~—~~|~~—~~|~~—~~|~~—~~|
|---|---|---|---|
|**VRRM(V)**<br>**IO (A)**<br>**VF Max (V)**<br>**@ +25°C**<br>**IR Max (mA)**<br>**@ +25°C**<br>200<br>10<br>0.88<br>0.1<br>~~—~~||||
|**VRRM(V)**|**IO (A)**|**VF Max (V)**<br>**@ +25°C**|**IR Max (mA)**<br>**@ +25°C**|
|200|10|0.88|0.1|



## **Features and Benefits** 

- Ultra Low Forward Voltage Drop 

- Excellent High Temperature Stability 

- Patented Super Barrier Rectifier Technology (SBR[®] ) 

- Soft, Fast Switching Capability 

- +175°C Operating Junction Temperature 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description & Applications** 

Packaged in the compact thermally efficient PowerDI[®] 5 package, provides low VF and low reverse leakage at high temperatures. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (SBR10U200P5Q)** 

It is ideal for use in the following applications: 

## **Mechanical Data** 

- Bridge Diodes 

- Freewheeling Diodes 

- Blocking Diodes 

- Reverse Protection Diodes 

- Case: PowerDI5 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Polarity: See Diagram 

- Weight: 0.093 grams (Approximate) 

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PowerDI5<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


**LEFT PIN BOTTOM SIDE RIGHT PIN HEAT SINK Note:   Pins Left & Right must be electrically connected at the printed circuit board.** 

**Ordering Information** (Note 4) 

**Part Number Case Packaging** SBR10U200P5-13 PowerDI5 5,000/Tape & Reel ~~SSS~~ SBR10U200P5-13D PowerDI5 5,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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PowerDI5<br>SS10U200 1 0 U 2 0 0<br>  YYYWWK Y W W K<br>**----- End of picture text -----**<br>


S10U200 = Product Type Marking Code = Manufacturers’ Code Marking YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 for 2020) WW = Week Code (01 to 53) K = Factory Designator 

_SBR and PowerDI are registered trademarks of Diodes Incorporated._ 

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SBR10U200P5 Document number: DS31234  Rev. 12 - 2 

September 2020 © Diodes Incorporated 

**SBR10U200P5** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>For capacitive load,or capacitive load,r capacitive load,capacitive load,itive load,tive load,ive load,e load,load,oad, deraterateate currentrrententntt by 20%.20%.0%..||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VRM|200|V|
|Average Rectified Output Current|IO|10|A|
|Non-Repetitive Peak Forward Surge Current 8.3ms<br>Single Half Sine-Wave Superimposed on Rated Load|IFSM|180|A|
|Repetitive Peak Avalanche Power(1µs,+25°C)|PARM|3,000|W|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Typical Thermal Resistance Junction to Ambient(Note 5)|RJA|70|°C/W|
|Typical Thermal Resistance Junction to Case(Note 5)|RJC|14|°C/W|
|Typical Thermal Resistance Junction to Ambient(Note 6)|RJA|20|°C/W|
|Typical Thermal Resistance Junction to Case(Note 6)|RJC|3|°C/W|
|Operating Temperature Range                                    Reverse Mode<br>DC Forward Mode(Note 7)|TJ|-65 to +175<br>≤200|°C|
|Storage Temperature Range|TSTG|-65 to +175|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) **Characteristic Symbol Min Typ Max Unit Test Condition** — 0.75 0.82 IF = 5A, TJ = +25°C Forward Voltage Drop VF — 0.62 0.67 V IF = 5A, TJ = +125°C — 0.83 0.88 IF = 10A, TJ = +25°C — 0.1 VR = 200V, TJ = +25°C Leakage Current (Note 8) IR — 0.18 10 mA VR = 200V, TJ = +125°C ~~rr~~ Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout per http://www.diodes.com/package-outlines.html. 6. Device mounted on FR-4 PCB with 1-inch pad layout and additional HK2 (45mm x 20mm x12mm). 7. Max junction temperature guaranteed for 2 hours. 

8. Short duration pulse test used to minimize self heat effect. 

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**SBR10U200P5** [| 

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)A 1,000<br>N [T(µ] T   = 150°CA<br>SSS S S S<br>100 Seeee888=2<br>C [URRE] T   = 125°CA<br>E<br>a |<br>R [S]<br>E +t<br>V<br>R [E] 10 eee T   = 85°CA<br>O [US]<br>a a ee ee ee<br>N [E]<br>1 e e<br>N [TA]<br>T [A] a T   = 25°CA<br>, [INS] R<br>I 0.1 Pt tt tt et | ee<br>0 20 40 60 80 100 120 140 160 180 200<br>V  , INSTANTANEOUS REVERSE VOLTAGE (V)R<br>Fig. 3 Typical Reverse Characteristics<br>12<br>Based on Lead Temperature TL<br>10<br>RJA = RJC<br>8.0<br>6.0<br>4.0<br>Note 5<br>2.00 SNaaaa.oN<br>0 25 50 75 100 125 150 175<br>TL, LEAD TEMPERATURE  ( °C)癈 )<br>Fig. 5 Forward Current Derating Curve<br>A)<br>µ<br>, INSTANTANEOUS REVERSE CURRENT (<br>IR<br>F(AV)<br>, AVERAGE FORWARD CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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) [A] (T 100 _———————<br>N ———<br>E<br>R 10<br>R<br>U ———<br>C a ee a, ool |<br>DRA 1 T   = 150°CA<br>W<br>R T   = 125°CA<br>OF 0.1 T   = 85°CA<br>S<br>UO A) ay a Pe! T   = 25°CA rs<br>EN 0.01 T   = -55°CA<br>A<br>TN fF a A ay ee a a<br>A<br>T 0.001 SLL}<br>S SS SS<br>F tffi<br>I [,IN] 0.0001 1 a Ar<br>0 0.2 0.4 0.6 0.8 1 1.2<br>V  , INSTANTANEOUS FORWARD VOLTAGE (V)F<br>Fig. 2 Typical Forward Characteristics<br>10,000<br>f = 1MHz<br>SSC Sati<br>1,000 NTT<br>a a<br>a Se<br>100 TSC<br>ea<br>10 SNee ee<br>SE<br>1<br>all<br>0.1 1 10 100<br>VR, DC REVERSE VOLTAGE (V)<br>Fig. 4 Total Capacitance vs. Reverse Voltage<br>175<br>150<br>Note 6<br>125<br>100<br>75<br>50<br>EEE EEL<br>25 ELELELEEELEEEL<br>0 CLEELELEEEELELLELELEE<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, DC REVERSE VOLTAGE (V)<br>Fig. 6 Operating Temperature Derating<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>, TOTAL CAPACITANCE (pF)<br>C<br>T<br>A<br>, DERATED AMBIENT TEMPERATURE (°C)<br>T<br>**----- End of picture text -----**<br>


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Document number: DS31234  Rev. 12 - 2 

**SBR10U200P5** 

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120<br>100<br>80<br>PNET EE<br>60<br>40<br>20<br>0<br>0 FLL 25 50 75 100 TN- 125 150 175<br>TJ, JUNCTION TEMPERATURE ((°C)癈 )<br>Fig. 7 Pulse Derating Curve<br>ARM<br>, AVALANCHE PEAK PULSE POWER  DERATING IN PERCENTAGE (%)<br>P<br>**----- End of picture text -----**<br>


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10,000<br>1,000<br>gS mci<br>100<br>10<br>1 Cnn 10 100 1,000 10,000<br>tPT, PULSE DURATION (µs)P, PULSE DURATION (礢 )<br>Fig. 8 Maximum Avalanche Power vs. Pulse Duration<br>,  MAXIMUM AVALANCHE POWER (W)<br>P<br>M<br>**----- End of picture text -----**<br>


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**SBR10U200P5** [ 

## DES 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5** 

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E1<br>E1/2 A1<br>es<br>e<br>b2 D PowerDI5<br>2X b1 Dim  Min  Max  Typ<br>£ [ | Po A 1.05 1.15 1.10<br>A1  0.00 0.05 --<br>! E/2 | A ————— A2 0.33 0.43 0.381<br>s E Stde ERR b1 0.80 0.99 0.89<br>b2 1.70 1.88 1.78<br>A2 D 3.90 4.05 3.966<br>D2 --  --  3.054<br>E 6.40 6.60 6.51<br>e --  --  1.84<br>\ 7 ne | a<br>E1 5.30 5.45 5.37<br>a === E2 --  --  3.549<br>E2<br>L1 L 0.75 0.95 0.85<br>L1 0.50 0.65 0.57<br>—— ——<br>L1 W 1.10 1.41  1.255<br>All Dimensions in mm<br>W<br>D2<br>i. L L<br>5°±<br> 1°<br> 1°<br>10°±<br>10°±<br> 1°<br>5°±<br> 1°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5** 

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X1<br>X2<br>T<br>C Y1<br>Y<br>= i<br>X<br>EL G<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|1.840|
|**G**|0.852|
|**X**|1.400|
|**X1**|4.860|
|**X2**|4.860<br>1.310|
|**Y**|1.390|
|**Y1**|3.360|



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SBR10U200P5 Document number: DS31234  Rev. 12 - 2 

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**SBR10U200P5** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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SBR10U200P5 Document number: DS31234  Rev. 12 - 2 

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---

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