# Bipolar Transistor Array, Dual NPN, 45 V, 100 mA, 500 mW ![Product image](https://novapart.co/image/farnell:3617510/) **URL**: https://novapart.co/products/SBC847CDXV6T1G/bipolar-transistor-array-dual-npn-45-v-100-ma-500 **SKU**: SBC847CDXV6T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0630 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | AEC-Q101 | | Transistor Mounting | Surface Mount | | Transistor Polarity | Dual NPN | | Power Dissipation Npn | 500mW | | Power Dissipation Pnp | - | | Transistor Case Style | SOT-563 | | Transition Frequency Npn | 100MHz | | Transition Frequency Pnp | - | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 420hFE | | Dc Current Gain Hfe Min Pnp | - | | Continuous Collector Current Npn | 100mA | | Continuous Collector Current Pnp | - | | Collector Emitter Voltage Max Npn | 45V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3617510/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Dual General Purpose Transistors ## **NPN Duals** ## BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. ## **Features** **==> picture [122 x 93] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
Q1 Q2
(4) (5) (6)
BC847CDXV6T1
**----- End of picture text -----**
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6
&
1
SOT-563
CASE 463A
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## **MARKING DIAGRAMS** - AEC-Q101 Qualified and PPAP Capable - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These are Pb-Free Devices ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**||||| |---|---|---|---|---| |**Rating**|**Symbol**|**BC847**|**BC848**|**Unit**| |Collector − Emitter Voltage|VCEO|45|30|V| |Collector − Base Voltage|VCBO|50|30|V| |Emitter − Base Voltage|VEBO|6.0|5.0|V| |Collector Current − Continuous|IC|100|100|mAdc| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [27 x 33] intentionally omitted <==** **----- Start of picture text -----**
1x M
1
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- 1x = Device Code x = G or M - M = Date Code = Pb-Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 2. ## **THERMAL CHARACTERISTICS** **Characteristic (One Junction Heated) Symbol Max Unit** ~~ee ee~~ Total Device Dissipation, (Note 1) PD TA = 25 C 357 mW Derate above 25C 2.9 mW/C ~~SL~~ Thermal Resistance, R JA 350 C/W Junction-to-Ambient (Note 1) ~~ee~~ **Characteristic (Both Junctions Heated) Symbol Max Unit** ~~ee~~ Total Device Dissipation, (Note 1) PD TA = 25 C 500 mW Derate above 25 C 4.0 mW/C ~~PT~~ Thermal Resistance, R JA 250 C/W Junction-to-Ambient (Note 1) ~~ee~~ Junction and Storage TJ, Tstg −55 to +150 C Temperature Range tC~<~™S<~mti‘(i‘iSCS™ ~~TC~~ 1. FR-4 @ Minimum Pad Publication Order Number: **BC847CDXV6T1/D** **1**  Semiconductor Components Industries, LLC, 2011 **May, 2025 − Rev. 5** **BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** **ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) |**Characteristic**
**Symbol**
**Min**
**Typ**
**Max**
**Unit**
**OFF CHARACTERISTICS**
~~a~~| |---| |Collector-Emitter Breakdown Voltage
(IC= 10 mA)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)CEO
45
30
−
−
−
−
V
Collector-Emitter Breakdown Voltage
(IC= 10 A, VEB= 0)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)CES
50
30
−
−
−
−
V
~~ee~~
~~ee ee~~
~~pe~~| |Collector-Base Breakdown Voltage
(IC= 10 A)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)CBO
50
30
−
−
−
−
V
~~pe~~| |Emitter-Base Breakdown Voltage
(IE= 1.0 A)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V(BR)EBO
6.0
5.0
−
−
−
−
V
~~pe~~| |Collector Cutoff Current (VCB= 30 V)
(VCB= 30 V, TA= 150C)
ICBO
−
−
−
−
15
5.0
nA
A
~~ee~~| |**ON CHARACTERISTICS**| |DC Current Gain
(IC= 10 A, VCE= 5.0 V)
(IC= 2.0 mA, VCE= 5.0 V)
hFE
−
420
270
520
−
800
−
~~pe~~| |Collector-Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)
Collector-Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
~~OO~~| |Base-Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)
Base-Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
~~OO~~| |Base-Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)
Base-Emitter Voltage(IC= 10 mA, VCE= 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
~~OO~~| |**SMALL-SIGNAL CHARACTERISTICS**| |Current-Gain − Bandwidth Product
(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
~~OO~~| |Output Capacitance (VCB= 10 V, f = 1.0 MHz)
Cobo
−
−
1.5
pF
~~GO~~| |Noise Figure
(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
~~es~~| |Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product| |performance may not be indicated by the Electrical Characteristics if operated under different conditions.| ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Specific Marking**|**Package**|**Shipping**†| |BC847CDXV6T1G
SBC847CDXV6T1G|1G|SOT-563
(Pb-Free)|4000 / Tape & Reel| |**DISCONTINUED**(Note 2)|||| |BC847CDXV6T5G|1G|SOT-563
(Pb-Free)|8000 / Tape & Reel| |BC848CDXV6T1G|1L|SOT-563
(Pb-Free)|4000 / Tape & Reel| † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2. **DISCONTINUED:** These devices are not available. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. **www.onsemi.com 2** ~~—~~ **Share Feedback** Your Opinion Matters **BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1000 0.30
900 c 150C o o VCE = 1 V 0.25 o IC/IB = 20 oo,
800
eS 0 nil  ;
150 C
700 CSI CI L TT E
0.20
600 25C
PONE ETAT EE
500 PINTET FTTH 0.15 Ter 25C nywy
400
s −55C sc 0.10 LEE EIT asaAVA
300 att t [be"| YY −55C
200 COTTA) REET ee
0.05
100
0 PLLee INSEE TTT 0 TiHN LLL Hil
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage
Current vs. Collector Current
1.1 1.2
1.0 IC/IB = 20 1.1 VCE = 5 V
1.0
0.9
0.8 −55C maA eee a: 0.9 r e n −55C
SP HE EET ELT 0.8 pe 25C
0.7 o om St a
25C 0.7
So TTT LEAT TT eet ell
0.6
PL Pal 0.6 | | | [Ue mall 150C apa
ee eal attH at
0.5
Ee 0.5 PTO LC = eel
0.4 150C 0.4
0.3 P eee ELLULT 0.3 ParC r |
0.2 a el 0.2 PTET EEEIL LT]
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN
hFE , COLLECTOR-EMITTER SAT-CE(sat) URATION VOLTAGE (V)
V
, BASE-EMITTER
BE(sat)
V , BASE-EMITTER VOLTAGE (V)
SATURATION VOLTAGE (V)
BE(on)
V
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**Figure 3. Base Emitter Saturation Voltage vs. Collector Current** **Figure 4. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** **BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 381] intentionally omitted <==** **----- Start of picture text -----**
2.0 1.0
TA = 25  C -55  C to +125  C
1.6 PPAR AR NEE 1.2 Pe LP IPE fH
APETV
1.2 PLLLPeNT ty IC = 200 mA TATE) 1.6 EE COCOSTIa |
AA TEENY | ae EE =a
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
COPTIC CTI NTI 2.4 Pere
0.4 COPA INNOI PE
HH NS 2.8
PINCUS ~ Cerri EE
0 CO SSeSSNOT TE OaCOC Crrnie CE Ce Eo
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Collector Saturation Region Figure 6. Base-Emitter Temperature Coefficient
10 Sass = 400300 0
7.0 T A = 25  C
200
5.0 PELCoS C ib eesa aT N
3.0 COISS| NTCo|P| E 10080 eeTesty TTT VTACE = 25 = 10 V  C \
Cob
60
2.0 i TIN | =\ PittBRTt TEeeeETT TP eee
40
30
1.0 CUE PARKA MK] §§ 20 |Gece
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
C) 
VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/

C, CAPACITANCE (pF)
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**Figure 7. Capacitances** **Figure 8. Current-Gain − Bandwidth Product** **==> picture [245 x 173] intentionally omitted <==** **----- Start of picture text -----**
1
a 100 mS 10 mS
P Ii TT
1 mS
1 S
0.1
SSS AS
Thermal Limit
0.01 TTT NONTTTTT
| ree SS lll
a ee ee ee ee
a aee
0.001 Ft ELUATE ELUTE TT
0.1 1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 9. Safe Operating Area** **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** **BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G** ## **REVISION HISTORY** |**Revision**|**Description of Changes**|**Date**| |---|---|---| |5|Rebranded the Data Sheet to**onsemi**format.
BC847CDXV6T5G, BC848CDXV6T1G OPNs Marked as Discontinued.|05/23/2025| **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [314 x 39] intentionally omitted <==** **----- Start of picture text -----**
SOT−563−6 1.60x1.20x0.55, 0.50P
CASE 463A
ISSUE J
DATE 15 FEB 2024
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**==> picture [481 x 173] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
S T YL E 7: S T YL E 8 S T YL E 9:
P I N 1. C ATH OD E P I N 1 , DR AI N P I N 1 , SOURC E 1 O55
2, A NOD E 2, DR AI N 2, G ATE 1
XXM
3. C ATH OD E 3. G ATE 3, DR AI N 2
4. C ATH OD E 4. SOURC E 4. SOURC E 2 1
5, A NOD E 5, DR AI N 5, G ATE 2 —
6. C ATH OD E 6. DR AI N 6. DR AI N 1 XX = Specific Device Code
M = Month Code
. = Pb−Free Package
S T YL E 1 0: S T YL E 1
P I N 1 . C ATH OD E 1 P I N 1 . E M ITTE R 2 *This information is generic. Please refer to
2, N/C 2, B A S E 2 device data sheet for actual part marking.
3. C ATH OD E 2 3, COLL E C T OR 1 Pb−Free indicator, “G” or microdot “ . ”, may
5.4. N/C A NOD E 2 4.5. E BM AITTE S E 1 R 1 or may not be present. Some products may
6. A NOD E 1 6. COLL E C T OR 2 not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON11126D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−563−6 1.60x1.20x0.55, 0.50P PAGE 1 OF 1
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