# Bipolar Transistor Array, NPN, PNP, 45 V, 45 V, 100 mA, 100 mA, 500 mW

![Product image](https://novapart.co/image/farnell:3617509/)

**URL**: https://novapart.co/products/SBC847BPDXV6T1G/bipolar-transistor-array-npn-pnp-45-v-100-ma-500
**SKU**: SBC847BPDXV6T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0630
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN, PNP |
| Power Dissipation Npn | 500mW |
| Power Dissipation Pnp | 500mW |
| Transistor Case Style | SOT-563 |
| Transition Frequency Npn | 100MHz |
| Transition Frequency Pnp | 100MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 200hFE |
| Dc Current Gain Hfe Min Pnp | 200hFE |
| Continuous Collector Current Npn | 100mA |
| Continuous Collector Current Pnp | 100mA |
| Collector Emitter Voltage Max Npn | 45V |
| Collector Emitter Voltage Max Pnp | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3617509/)

**DATA SHEET www.onsemi.com** 

## NPN/PNP Dual General Purpose Transistor BC847BPDXV6, SBC847BPDXV6 

This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **MAXIMUM RATINGS − NPN** 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector−Emitter Voltage|VCEO|45|V|
|Collector−Base Voltage|VCBO|50|V|
|Emitter−Base Voltage|VEBO|6.0|V|
|Collector Current −<br>Continuous|IC|100|mAdc|



## **MAXIMUM RATINGS − PNP** 

|**MAXIMUM RATINGS − PNP**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage|VCEO|−45|V|
|Collector−Base Voltage|VCBO|−50|V|
|Emitter−Base Voltage|VEBO|−5.0|V|
|Collector Current −<br>Continuous|IC|−100|mAdc|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**<br>**(One Junction Heated)**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|Total Device Dissipation (Note 1)<br>TA= 25°C<br>Derate above 25°C|PD|357<br>2.9|mW<br>mW/°C|
|Thermal Resistance −<br>Junction-to-Ambient (Note 1)|R�JA|350|°C/W|
|**Characteristic**<br>**(Both Junctions Heated)**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation (Note 1)<br>TA= 25°C<br>Derate above 25°C|PD|500<br>4.0|mW<br>mW/°C|
|Thermal Resistance −<br>Junction-to-Ambient (Note 1)|R�JA|250|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to<br>+150|°C|



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(3) (2) (1)<br>Q1 Q2<br>(4) (5) (6)<br>BC847BPDX6T1<br>**----- End of picture text -----**<br>


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[4]<br>6 [5]<br>[3]<br>1  [2]<br>SOT−563<br>CASE 463A<br>MARKING DIAGRAM<br>4F M �<br>�<br>1<br>4F = Specific Device Code<br>M = Month Code<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**<br>**Pa**|**ckage**|**Shipping**†|
|---|---|---|
|BC847BPDXV6T1G<br>SO<br>(Pb|T−563<br>−Free)|4 mm pitch<br>4000/Tape & Reel|
|SBC847BPDXV6T1G SO<br>(Pb|T−563<br>−Free)|4 mm pitch<br>4000/Tape & Reel|
|BC847BPDXV6T5G<br>SO<br>(Pb|T−563<br>−Free)|2 mm pitch<br>8000/Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

1. FR−4 @ Minimum Pad 

Publication Order Number: **BC847BPDXV6T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **November, 2022 − Rev. 3** 

## **BC847BPDXV6, SBC847BPDXV6** 

**ELECTRICAL CHARACTERISTICS (NPN)** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS (NPN)**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)|V(BR)CEO|45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10μA, VEB= 0)|V(BR)CES|50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)|V(BR)CBO|50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)|V(BR)EBO|6.0|−|−|V|
|Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>μA|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10μA, VCE= 5.0 V)<br>(IC= 2.0 mA, VCE= 5.0 V)|hFE|−<br>200|150<br>290|−<br>475|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**2** 

## **BC847BPDXV6, SBC847BPDXV6** 

## **ELECTRICAL CHARACTERISTICS (PNP)** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS (PNP)**(TA= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)|V(BR)CEO|−45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= −10μA, VEB= 0)|V(BR)CES|−50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= −10�A)|V(BR)CBO|−50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)|V(BR)EBO|−5.0|−|−|V|
|Collector Cutoff Current (VCB= −30 V)<br>Collector Cutoff Current(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>μA|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10μA, VCE= −5.0 V)<br>(IC= −2.0 mA, VCE= −5.0 V)|hFE|−<br>200|150<br>290|−<br>475|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VCE(sat)|−<br>−|−<br>−|−0.3<br>−0.65|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 kΩ,<br>f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**3** 

**BC847BPDXV6, SBC847BPDXV6** 

## **TYPICAL NPN CHARACTERISTICS** 

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2.0 1.0<br>1.5 VTACE = 25 = 10 V°C 0.90.8 TA = 25°C<br>VBE(sat) @ IC/IB = 10<br>1.0 0.7<br>0.8 0.6 VBE(on) @ VCE = 10 V<br>0.5<br>0.6<br>0.4<br>0.4 0.3<br>0.3 0.2<br>0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A  = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**Figure 6. Current−Gain − Bandwidth Product** 

**www.onsemi.com** 

**4** 

**BC847BPDXV6, SBC847BPDXV6** 

## **TYPICAL PNP CHARACTERISTICS** 

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2.0 -1.0<br>1.5 VCE = -10 V -0.9 TA = 25°C<br>TA = 25°C -0.8 VBE(sat) @ IC/IB = 10<br>1.0 -0.7<br>-0.6 VBE(on) @ VCE = -10 V<br>0.7<br>-0.5<br>0.5 -0.4<br>-0.3<br>-0.2<br>0.3<br>-0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature<br>Coefficient<br>10 400<br>Cib 300<br>7.0<br>TA = 25°C 200<br>5.0<br>150 VCE = -10 V<br>TA = 25°C<br>3.0 Cob 100<br>80<br>60<br>2.0<br>40<br>30<br>1.0 20<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>Figure 11. Capacitances Figure 12. Current−Gain − Bandwidth Product<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−563−6 1.60x1.20x0.55, 0.50P<br>CASE 463A<br>ISSUE J<br>DATE 15 FEB 2024<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>S T YL E 7: S T YL E 8 S T YL E 9:<br>P I N 1. C ATH OD E P I N 1 , DR AI N P I N 1 , SOURC E 1 O55<br>2, A NOD E 2, DR AI N 2, G ATE 1<br>XXM<br>3. C ATH OD E 3. G ATE 3, DR AI N 2<br>4. C ATH OD E 4. SOURC E 4. SOURC E 2 1<br>5, A NOD E 5, DR AI N 5, G ATE 2 —<br>6. C ATH OD E 6. DR AI N 6. DR AI N 1 XX = Specific Device Code<br>M = Month Code<br>. = Pb−Free Package<br>S T YL E 1 0: S T YL E 1<br>P I N 1 . C ATH OD E 1 P I N 1 . E M ITTE R 2 *This information is generic. Please refer to<br>2, N/C 2, B A S E 2 device data sheet for actual part marking.<br>3. C ATH OD E 2 3, COLL E C T OR 1 Pb−Free indicator, “G” or microdot “ . ”, may<br>5.4. N/C A NOD E 2 4.5. E BM AITTE S E 1 R 1 or may not be present. Some products may<br>6. A NOD E 1 6. COLL E C T OR 2 not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON11126D Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−563−6 1.60x1.20x0.55, 0.50P PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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- [Supplier page](https://es.farnell.com/on-semiconductor/sbc847bpdxv6t1g/dual-npn-pnp-bipolar-transistor/dp/3617509)
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