# Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW

![Product image](https://novapart.co/image/farnell:2724493/)

**URL**: https://novapart.co/products/SBC847BPDW1T1G/bipolar-transistor-array-complementary-npn-and-pnp
**SKU**: SBC847BPDW1T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0440
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SO

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Complementary NPN and PNP |
| Power Dissipation Npn | 380mW |
| Power Dissipation Pnp | 380mW |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | 100MHz |
| Transition Frequency Pnp | 100MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 200hFE |
| Dc Current Gain Hfe Min Pnp | 200hFE |
| Continuous Collector Current Npn | 100mA |
| Continuous Collector Current Pnp | 100mA |
| Collector Emitter Voltage Max Npn | 45V |
| Collector Emitter Voltage Max Pnp | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2724493/)

## BC846BPDW1, BC847BPDW1, BC848CPDW1 Series 

## Dual General Purpose Transistors 

## **NPN/PNP Duals (Complementary)** 

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. 

## **www.onsemi.com** 

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SOT−363<br>CASE 419B<br>STYLE 1<br>**----- End of picture text -----**<br>


## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS − NPN** 

|**MAXIMUM RATINGS − NPN**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCEO|65<br>45<br>30|V|
|Collector-Base Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCBO|80<br>50<br>30|V|
|Emitter−Base Voltage|VEBO|6.0|V|
|Collector Current − Continuous|IC|100|mAdc|
|Collector Current − Peak|ICM|200|mAdc|



## **MAXIMUM RATINGS − PNP** 

|**MAXIMUM RATINGS − PNP**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCEO|−65<br>−45<br>−30|V|
|Collector-Base Voltage<br>BC846, SBC846<br>BC847, SBC847<br>BC848|VCBO|−80<br>−50<br>−30|V|
|Emitter−Base Voltage|VEBO|−6.0|V|
|Collector Current − Continuous|IC|−100|mAdc|
|Collector Current − Peak|ICM|−200|mAdc|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**==> picture [146 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3) (2) (1)<br>Q1 Q2<br>4<br>(4) (5) (6)<br>MARKING DIAGRAM<br>6<br>XX M<br>1<br>XX = Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Mark**|**Package**<br>**Mark**|**Shipping**†|
|---|---|---|---|
|BC846BPDW1T1G,<br>SBC846BPDW1T1G|BB|SOT−363<br>(Pb−Free)<br>BB|3,000 /<br>Tape & Reel|
|SBC846BPDW1T2G|BB|SOT−363<br>(Pb−Free)<br>BB|3,000 /<br>Tape & Reel|
|BC847BPDW1T1G|BF|SOT−363<br>(Pb−Free)<br>BF|3,000 /<br>Tape & Reel|
|SBC847BPDW1T1G|BF|SOT−363<br>(Pb−Free)<br>BF|3,000 /<br>Tape & Reel|
|SBC847BPDW1T3G|BF|SOT−363<br>(Pb−Free)<br>BF|10,000 /<br>Tape & Reel|
|BC847BPDW1T2G|BF|SOT−363<br>(Pb−Free)<br>BF|3,000 /<br>Tape & Reel|
|BC848CPDW1T1G|BL|SOT−363<br>(Pb−Free)<br>BL|3,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **BC846BPDW1T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **April, 2016 − Rev. 12** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**|||||||
|---|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**||**Max**|||**Unit**|
|Total Device Dissipation Per Device<br>FR−5 Board (Note 1)<br>TA= 25°C<br>Derate above 25°C||PD||380<br>250<br>3.0|||mW<br>mW/°C<br>mW/°C|
|Thermal Resistance, Junction−to−Ambient||R�JA||328|||°C/W|
|Junction and Storage Temperature||TJ, Tstg||−55 to +150|||°C|
|1. FR−5 = 1.0 x 0.75 x 0.062 in.<br>**ELECTRICAL CHARACTERISTICS (NPN)**(TA= 25°C unless otherwise noted)||||||||
|**Characteristic**|**Symbol**|**Min**||**Typ**|**Max**||**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CEO|65<br>45<br>30||−<br>−<br>−|−<br>−<br>−||V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)<br>BC846, SBC846 Series<br>BC847B, SBC847B Only<br>BC848 Series|V(BR)CES|80<br>50<br>30||−<br>−<br>−|−<br>−<br>−||V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CBO|80<br>50<br>30||−<br>−<br>−|−<br>−<br>−||V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)EBO|6.0<br>6.0<br>6.0||−<br>−<br>−|−<br>−<br>−||V|
|Collector Cutoff Current<br>(VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−||−<br>−|15<br>5.0||nA<br>�A|
|**ON CHARACTERISTICS**||||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>BC846B, SBC846B, BC847B, SBC847B<br>BC848C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC846B, SBC846B, BC847B, SBC84B7<br>BC848C|hFE|−<br>−<br>200<br>420||150<br>270<br>290<br>520|−<br>−<br>475<br>800||−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA) All devices except SBC847BPDW1T1G<br>SBC847BPDW1T1G only<br>(IC= 100 mA, IB= 5.0 mA) All devices<br>(IC= 2 mA, IB= 0.5 mA) SBC847BPDW1T1G only|VCE(sat)|−<br>−<br>−<br>−|−<br>−<br>−<br>0.024||0.25<br>0.1<br>0.6<br>−||V|
|Base−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA)<br>(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9||−<br>−||V|
|Base−Emitter Voltage<br>(IC= 2.0 mA, VCE= 5.0 V)<br>(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−||700<br>770||mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−||−||MHz|
|Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−||4.5||pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−||10||dB|



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**2** 

## **BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **ELECTRICAL CHARACTERISTICS (PNP)** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS (PNP)**(TA= 25°C unless otherwi|se noted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −10 mA)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CEO|−65<br>−45<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= −10�A, VEB= 0)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CES|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Collector−Base Breakdown Voltage<br>(IC= −10�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)CBO|−80<br>−50<br>−30|−<br>−<br>−|−<br>−<br>−|V|
|Emitter−Base Breakdown Voltage<br>(IE= −1.0�A)<br>BC846, SBC846 Series<br>BC847, SBC847 Series<br>BC848 Series|V(BR)EBO|−6.0<br>−6.0<br>−6.0|−<br>−<br>−|−<br>−<br>−|V|
|Collector Cutoff Current<br>(VCB= −30 V)<br>(VCB= −30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|−15<br>−4.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10�A, VCE= −5.0 V)<br>BC846B, SBC846B, BC847B, SBC847B<br>BC848C<br>(IC= −2.0 mA, VCE= −5.0 V)<br>BC846B, SBC846B, BC847B, SBC847B<br>BC848C|hFE|−<br>−<br>200<br>420|150<br>270<br>290<br>520|−<br>−<br>475<br>800|−|
|Collector−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA) All devices except SBC847BPDW1T1G<br>SBC847BPDW1T1G only<br>(IC= −100 mA, IB= −5.0 mA) All devices<br>(IC= −2 mA, IB= −0.5 mA) SBC847BPDW1T1G only|VCE(sat)|−<br>−<br>−<br>−|−<br>−<br>−<br>−0.024|−0.3<br>−0.1<br>−0.65<br>−|V|
|Base−Emitter Saturation Voltage<br>(IC= −10 mA, IB= −0.5 mA)<br>(IC= −100 mA, IB= −5.0 mA)|VBE(sat)|−<br>−|−0.7<br>−0.9|−<br>−|V|
|Base−Emitter On Voltage<br>(IC= −2.0 mA, VCE= −5.0 V)<br>(IC= −10 mA, VCE= −5.0 V)|VBE(on)|−0.6<br>−|−<br>−|−0.75<br>−0.82|V|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −10 mA, VCE= −5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance<br>(VCB= −10 V, f = 1.0 MHz)|Cob|−|−|4.5|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



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**3** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL NPN CHARACTERISTICS − BC846/SBC846** 

**==> picture [491 x 603] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 0.30<br>150 ° C VCE = 5 V IC/IB = 20<br>0.25<br>400<br>0.20<br>300 25 ° C<br>0.15<br>200 −55 ° C 150 ° C<br>0.10<br>25 ° C<br>100<br>0.05 −55 ° C<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 1.1 VCE = 5 V<br>1.0<br>0.9 −55 ° C 0.9 −55 ° C<br>0.8<br>0.8 25 ° C<br>0.7 25 ° C 0.7<br>0.6 0.6 150 ° C<br>0.5<br>0.5<br>0.4 150 ° C 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. Base Emitter Saturation Voltage vs. Figure 4. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>2.0 -1.0<br>TA = 25°C<br>1.6 -1.4<br>20 mA 50 mA 100 mA 200 mA<br>1.2 -1.8<br>�VB for VBE<br>0.8 IC = -2.2 -55°C to 125°C<br>10 mA<br>0.4 -2.6<br>0 -3.0<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>**----- End of picture text -----**<br>


**Figure 5. Collector Saturation Region** 

**Figure 6. Base−Emitter Temperature Coefficient** 

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**4** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL NPN CHARACTERISTICS − BC846/SBC846** 

**==> picture [239 x 172] intentionally omitted <==**

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40<br>TA = 25°C<br>20<br>Cib<br>10<br>6.0<br>4.0 Cob<br>2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

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VCE = 5 V<br>500 °<br>TA = 25 C<br>200<br>100<br>50<br>20<br>1.0 5.0 10 50 100<br>IC, COLLECTOR CURRENT (mA)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 8. Current−Gain − Bandwidth Product** 

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**5** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL PNP CHARACTERISTICS — BC846/SBC846** 

**==> picture [491 x 603] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 0.30<br>150 ° C VCE = 5 V IC/IB = 20<br>0.25<br>400 150 ° C<br>25 ° C 0.20<br>300 °<br>25 C<br>0.15<br>200 −55 ° C<br>0.10<br>−55 ° C<br>100<br>0.05<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 9. DC Current Gain vs. Collector Figure 10. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.0 1.2<br>−55 ° C<br>0.9 IC/IB = 20 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7 0.8 25 ° C<br>0.6 150 ° C 0.7<br>0.5 0.6 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 11. Base Emitter Saturation Voltage vs. Figure 12. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>-2.0 -1.0<br>-1.6 -1.4<br>IC = -20 mA -50 mA -100 mA -200 mA<br>-10 mA<br>-1.2 -1.8<br>�VB for VBE<br>-55°C to 125°C<br>-0.8 -2.2<br>-0.4 -2.6<br>TJ = 25°C<br>0 -3.0<br>-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>**----- End of picture text -----**<br>


**Figure 13. Collector Saturation Region** 

**Figure 14. Base−Emitter Temperature Coefficient** 

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**6** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL PNP CHARACTERISTICS — BC846/SBC846** 

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**----- Start of picture text -----**<br>
40<br>VCE = -5.0 V<br>TJ = 25°C 500<br>20<br>Cib<br>200<br>10 100<br>8.0<br>6.0 50<br>Cob<br>4.0<br>20<br>2.0<br>-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br>


**Figure 15. Capacitance** 

**Figure 16. Current−Gain − Bandwidth Product** 

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**7** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES** 

**==> picture [491 x 602] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 0.30<br>150 ° C VCE = 5 V IC/IB = 20<br>0.25<br>400 150 ° C<br>0.20<br>300 25 ° C 25 ° C<br>0.15<br>200 −55 ° C<br>0.10<br>−55 ° C<br>100<br>0.05<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 17. DC Current Gain vs. Collector Figure 18. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>0.9 25 ° C 1.0<br>−55 ° C<br>0.9<br>0.8<br>150 ° C 0.8 25 ° C<br>0.7<br>0.7<br>0.6 0.6 150 ° C<br>0.5<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 19. Base Emitter Saturation Voltage vs. Figure 20. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 21. Collector Saturation Region** 

**Figure 22. Base−Emitter Temperature Coefficient** 

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**8** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES** 

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**----- Start of picture text -----**<br>
10<br>7.0 T A  = 25°C<br>5.0 C ib<br>3.0<br>Cob<br>2.0<br>1.0<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 23. Capacitances** 

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**----- Start of picture text -----**<br>
400<br>300<br>200<br>10080 VTACE = 25 = 10 V°C<br>60<br>40<br>30<br>20<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 24. Current−Gain − Bandwidth Product** 

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**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES** 

**==> picture [491 x 603] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 0.35<br>150 ° C VCE = 5 V IC/IB = 20 150 ° C<br>0.30<br>400<br>0.25<br>25 ° C<br>300<br>0.20<br>25 ° C<br>200 −55 ° C 0.15<br>0.10<br>−55 ° C<br>100<br>0.05<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 25. DC Current Gain vs. Collector Figure 26. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.8 25 ° C 0.9 −55 ° C<br>0.7<br>0.8<br>0.6 150 ° C 0.7 25 ° C<br>0.5 0.6 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 27. Base Emitter Saturation Voltage vs. Figure 28. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 29. Collector Saturation Region** 

**Figure 30. Base−Emitter Temperature Coefficient** 

**www.onsemi.com** 

**10** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES** 

**==> picture [242 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Cib<br>7.0<br>TA = 25°C<br>5.0<br>3.0 Cob<br>2.0<br>1.0<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 31. Capacitances** 

**==> picture [236 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>300<br>200<br>150 VCE = -10 V<br>TA = 25°C<br>100<br>80<br>60<br>40<br>30<br>20<br>-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 32. Current−Gain − Bandwidth Product** 

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**11** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL NPN CHARACTERISTICS − BC848 SERIES** 

**==> picture [491 x 602] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 0.30<br>900 VCE = 5 V IC/IB = 20<br>0.25<br>800 150 ° C 150 ° C<br>700<br>0.20<br>600<br>500 25 ° C 0.15 25 ° C<br>400<br>300 −55 ° C 0.10<br>−55 ° C<br>200<br>0.05<br>100<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 33. DC Current Gain vs. Collector Figure 34. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.1 1.2<br>1.0 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>1.0<br>0.9<br>25 ° C 0.9 −55 ° C<br>0.8<br>0.8<br>0.7 150 ° C 0.7 25 ° C<br>0.6<br>0.6<br>0.5 150 ° C<br>0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 35. Base Emitter Saturation Voltage vs. Figure 36. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 37. Collector Saturation Region** 

**Figure 38. Base−Emitter Temperature Coefficient** 

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**12** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL NPN CHARACTERISTICS − BC848 SERIES** 

**==> picture [237 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>7.0 T A  = 25°C<br>5.0 C ib<br>3.0<br>Cob<br>2.0<br>1.0<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 39. Capacitances** 

**==> picture [237 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>300<br>200<br>10080 VTACE = 25 = 10 V°C<br>60<br>40<br>30<br>20<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 40. Current−Gain − Bandwidth Product** 

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**13** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL PNP CHARACTERISTICS − BC848 SERIES** 

**==> picture [491 x 603] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 0.30<br>900 150 ° C VCE = 5 V IC/IB = 20 150 ° C<br>0.25<br>800<br>700<br>0.20<br>600 25 ° C 25 ° C<br>500 0.15<br>400 −55 ° C<br>0.10<br>300 −55 ° C<br>200<br>0.05<br>100<br>0 0<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 41. DC Current Gain vs. Collector Figure 42. Collector Emitter Saturation Voltage<br>Current vs. Collector Current<br>1.0 1.2<br>0.9 IC/IB = 20 −55 ° C 1.1 VCE = 5 V<br>25 ° C 1.0<br>0.8 0.9 −55 ° C<br>0.7<br>150 ° C 0.8 25 ° C<br>0.6 0.7<br>0.5 0.6 150 ° C<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 43. Base Emitter Saturation Voltage vs. Figure 44. Base Emitter Voltage vs. Collector<br>Collector Current Current<br>-2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>-1.6<br>1.6<br>-1.2<br>2.0<br>-0.8 IC = IC = -50 mA IC = -200 mA<br>-10 mA<br>2.4<br>IC = -100 mA<br>-0.4 IC = -20 mA<br>2.8<br>0<br>-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER<br>BE(sat)<br>V , BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>BE(on)<br>V<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 45. Collector Saturation Region** 

**Figure 46. Base−Emitter Temperature Coefficient** 

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**14** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

## **TYPICAL PNP CHARACTERISTICS − BC848 SERIES** 

**==> picture [242 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Cib<br>7.0<br>TA = 25°C<br>5.0<br>3.0 Cob<br>2.0<br>1.0<br>-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 47. Capacitances** 

**==> picture [236 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>300<br>200<br>150 VCE = -10 V<br>TA = 25°C<br>100<br>80<br>60<br>40<br>30<br>20<br>-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50<br>IC, COLLECTOR CURRENT (mAdc)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 48. Current−Gain − Bandwidth Product** 

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**15** 

**BC846BPDW1, BC847BPDW1, BC848CPDW1 Series** 

**==> picture [490 x 376] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02 P (pk) Z R �� JAJA (t) = r(t) R  = 328 ° C/W MAX � JA<br>0.01 0.01 t1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN<br>t2 READ TIME AT t 1<br>DUTY CYCLE, D = t1/t2 TJ(pk) − TC = P(pk) R � JC(t)<br>SINGLE PULSE<br>0.001<br>0 1.0 10 100 1.0�k 10�k 100�k 1.0�M<br>t, TIME (ms)<br>Figure 49. Thermal Response<br>1000<br>The safe operating area curves indicate IC−VCE lim-<br>1 �s its of the transistor that must be observed for reliable op-<br>eration. Collector load lines for specific circuits must fall<br>100 100 10 � � ss below the limits indicated by the applicable curve.<br>1 m s The data of Figure 50 is based upon TJ(pk) = 150°C; TC<br>3 m s or TA is variable depending upon conditions. Pulse<br>10 BC846 100 10  mm ss ≤curves are valid for duty cycles to 10% provided T 150°C. TJ(pk) may be calculated from the data in FigureJ(pk)<br>1 s 49. At high case or ambient temperatures, thermal limita-<br>tions will reduce the power that can be handled to values<br>less than the limitations imposed by the secondary break-<br>1.0 down.<br>1.0 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 50. Safe Operating Area − BC846** 

**==> picture [239 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>1 �s<br>10 �s<br>100 �s<br>100 1 ms<br>3 ms<br>10 ms<br>100 ms<br>BC847<br>10 1 s<br>1.0<br>1.0 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 51. Safe Operating Area − BC847** 

**==> picture [239 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>1 �s<br>10 �s<br>100 �s<br>100 1 ms<br>3 ms<br>10 ms<br>100 ms<br>1 s<br>BC848<br>10<br>1.0<br>1.0 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 52. Safe Operating Area − BC848** 

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**16** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y 

**==> picture [479 x 420] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>SCALE 2:1 2X DATE 11 DEC 2012<br>aaa H D<br>- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THELEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM  MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B l= 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>(tll, A1 C  A SEATINGPLANE Ma c === ddd 0.10 0.004<br>SIDE VIEW END VIEW GENERIC<br>MARKING DIAGRAM*<br>RECOMMENDED 6<br>SOLDERING FOOTPRINT*<br>6X 6X XXXM<br>0.30 0.66<br>1<br>Ta os 2.50 XXX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>0.65 yo (Note: Microdot may be in either location)<br>PITCH<br>**----- End of picture text -----**<br>


## DATE 11 DEC 2012 

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

   - *Date Code orientation and/or position may vary depending upon manufacturing location. 

**==> picture [83 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

**DOCUMENT NUMBER: 98ASB42985B** 

**DESCRIPTION: SC−88/SC70−6/SOT−363** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y 

## DATE 11 DEC 2012 

|STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:|
|---|---|---|---|---|---|
|PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2|
|2. BASE 2|||2. CATHODE|2. ANODE|2. N/C|
|3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1|
|4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1|
|5. BASE 1|||5. BASE|5. BASE|5. N/C|
|6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2|
|STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:|
|PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2|
|2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2|
|3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1|
|4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1|
|5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1|
|6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2|
|STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:|
|PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1|
|2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC|
|3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2|
|4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2|
|5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND|
|6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1|
|STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:|
|PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE|
|2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE|
|3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE|
|4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE|
|5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE|
|6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE|
|STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:|
|PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1|
|2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2|
|3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2|
|4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2|
|5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1|
|6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1|



Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. 

|**DOCUMENT NUMBER:**|**98ASB42985B**|Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.|Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.|
|---|---|---|---|
|**DESCRIPTION:**|**SC−88/SC70−6/SOT−363**||**PAGE 2 OF 2**|



ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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## Links

- [View this product on Novapart](https://novapart.co/products/SBC847BPDW1T1G/bipolar-transistor-array-complementary-npn-and-pnp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/sbc847bpdw1t1g/transistor-array-aec-q101-npn/dp/2724493)
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