# Small Signal Diode, Dual Series, 100 V, 715 mA, 1.25 V, 6 ns, 500 mA ![Product image](https://novapart.co/image/farnell:2985403/) **URL**: https://novapart.co/products/SBAV99LT1G/small-signal-diode-dual-series-100-v-715-ma-125-6 **SKU**: SBAV99LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes **Price**: €0.0180 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Description Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):715mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | AEC-Q101 | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | SOT-23 | | Diode Configuration | Dual Series | | Forward Voltage Max | 1.25V | | Forward Surge Current | 500mA | | Reverse Recovery Time | 6ns | | Average Forward Current | 715mA | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2985403/) BAV99L, SBAV99L ## Dual Series Switching Diode ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **www.onsemi.com** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* ## **MAXIMUM RATINGS** (Each Diode) |**MAXIMUM RATINGS**(Each Diode)|~~Ge~~|~~Gs~~|| |---|---|---|---| |**Rating**
~~ee~~|**Symbol**
~~ee~~
~~Ge~~
~~ee~~|**Value**
~~ee~~
~~Gs~~
~~ee~~|**Unit**
~~ee~~| |Reverse Voltage
~~ee~~|VR
~~Ge~~
~~ee~~
~~ee~~|100
~~Gs~~
~~ee~~
~~ee~~|Vdc
~~ee~~| |Forward Current|IF
~~ee~~|215
~~ee~~|mAdc| |Peak Forward Surge Current
~~Pe~~
~~es Sn~~|IFM(surge)
~~Sn Ge~~|500
~~Ge~~|mAdc| |Repetitive Peak Reverse Voltage
~~es Sn~~
~~|~~|VRRM
~~Sn Ge~~
ee~~eee~~
|100
~~Ge~~
~~eee~~
|V
~~eee~~
| |Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
~~es Sn~~
~~ee~~
~~|~~|IF(AV)
~~Sn Ge~~
~~ee~~
ee~~eee~~
|715
~~Ge~~
~~ee~~
~~eee~~
|mA
~~ee~~
~~eee~~
| |Repetitive Peak Forward Current
~~|~~|IFRM
ee~~eee~~
~~ff~~|450
~~eee~~
~~ff~~|mA
~~eee~~
~~ff~~| |Non−Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 s
~~| ~~|IFSM
ee~~eee~~
~~ff~~|2.0
1.0
0.5
~~eee~~
~~ff~~|A
~~eee~~
~~ff~~| **CASE 318 SOT−23 STYLE 11** **==> picture [130 x 44] intentionally omitted <==** **----- Start of picture text -----**
ANODE CATHODE
1 ae 2
3
CATHODE/ANODE
**----- End of picture text -----**
## **MARKING DIAGRAM** **==> picture [39 x 32] intentionally omitted <==** **----- Start of picture text -----**
A7 M
1
**----- End of picture text -----**
A7 = Device Code M = Date Code* = Pb−Free Package |**Characteristic**
~~es ee~~|**Symbol**
~~ee~~|**Max**
~~ee~~|**Unit**
~~ee~~| |---|---|---|---| |Total Device Dissipation
FR−5 Board (Note 1) TA= 25°C
Derate above 25°C
~~es ee~~|PD
~~ee~~|225
1.8
~~ee~~|mW
mW/°C
~~ee~~| |Thermal Resistance, Junction−to−Ambient
~~es ee~~
~~tT.~~|R JA
~~ee~~
~~tT.~~|556
~~ee~~
~~tT.~~|°C/W
~~ee~~
~~tT.~~| |Total Device Dissipation
Alumina Substrate (Note 2)
TA= 25°C
Derate above 25°C
~~tT.~~
~~a~~|PD
~~tT.~~
~~et~~~~**e**n~~|300
2.4
~~tT.~~
~~**e**s~~|mW
mW/°C
~~tT.~~| |Thermal Resistance, Junction−to−Ambient
~~es~~
~~a~~|R JA
~~es~~
~~et~~~~**e**n~~
~~e~~|417
~~es~~
~~**e**s~~|°C/W
~~es~~
~~e~~| |Junction and Storage
Temperature Range
~~a~~|TJ, Tstg
~~et~~~~**e**n~~
~~e~~|−65 to
+150
~~**e**s~~|°C
~~e~~| (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** |**Device**|**Package**|**Package**
**Shipping**†| |---|---|---| |BAV99LT1G|SOT−23
(Pb−Free)|SOT−23
(Pb−Free)
3,000 / Tape & Reel| |SBAV99LT1G|SOT−23
(Pb−Free)|SOT−23
(Pb−Free)
3,000 / Tape & Reel| |BAV99LT3G|SOT−23
(Pb−Free)|10,000 / Tape & Reel| |SBAV99LT3G|SOT−23
(Pb−Free)|10,000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **BAV99LT1/D** **1** © Semiconductor Components Industries, LLC, 2015 **December, 2015 − Rev. 11** ## **BAV99L, SBAV99L** **OFF CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Each Diode) |**OFF CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Each Diode)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |Reverse Breakdown Voltage,
(I(BR)= 100�A)|V(BR)|100|−|Vdc| |Reverse Voltage Leakage Current,
(VR= 100 Vdc)
(VR= 25 Vdc, TJ= 150°C)
(VR= 70 Vdc, TJ= 150°C)|IR|−
−
−|1.0
30
50|�Adc| |Diode Capacitance,
(VR= 0, f = 1.0 MHz)|CD|−|1.5|pF| |Forward Voltage,
(IF= 1.0 mAdc)
(IF= 10 mAdc)
(IF= 50 mAdc)
(IF= 150 mAdc)|VF|−
−
−
−|715
855
1000
1250|mVdc| |Reverse Recovery Time,
(IF= IR= 10 mAdc, iR(REC)= 1.0 mAdc) RL= 100�|trr|−|6.0|ns| |Forward Recovery Voltage,
(IF= 10 mA, tr= 20 ns)|VFR|−|1.75|V| ## **CURVES APPLICABLE TO EACH DIODE** **==> picture [492 x 387] intentionally omitted <==** **----- Start of picture text -----**
1000 100
TA = 150 ° C
10
100 TA = 150 ° C TA = 125 ° C
TA = 125 ° C 1.0
10 TA = 85 ° C TA = 85 ° C
TA = 55 ° C 0.1 TA = 55 ° C
TA = 25 ° C
1
TA = −40 ° C 0.01 TA = 25 ° C
TA = −55 ° C
0.1 0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage Figure 2. Leakage Current
0.61
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
0 1 2 3 4 5 6 7 8
VR, REVERSE VOLTAGE (V)
A)
�
, REVERSE CURRENT (
, FORWARD CURRENT (mA)IF IR
, DIODE CAPACITANCE (pF)
d
C
**----- End of picture text -----**
**Figure 3. Capacitance** **www.onsemi.com** **2** **BAV99L, SBAV99L** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AP **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**
D
SEE VIEW C
3
E HE
c
1 2
b
e 0.25
A
L
A1
L1
VIEW C
**----- End of picture text -----**
|NOTES:|NOTES:|NOTES:||||||||| |---|---|---|---|---|---|---|---|---|---|---| ||1.|DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,|||||||DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,|| ||1982.|||||||||| ||2.|CONTROLLING DIMENSION: INCH.||||||||| ||3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH||||||||| ||THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM||||||||THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM|| ||THICKNESS OF BASE MATERIAL.|||||||||| ||4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,||||||DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,||| ||PROTRUSIONS, OR GATE BURRS.|||||||||| ||||||**MILLIMETERS**||||**INCHES**|| ||**DIM**||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| |||**A**|||0.89|1.00|1.11|0.035|0.040|0.044| |||**A1**|||0.01|0.06|0.10|0.001|0.002|0.004| |||**b**|||0.37|0.44|0.50|0.015|0.018|0.020| |||**c**|||0.09|0.13|0.18|0.003|0.005|0.007| |||**D**|||2.80|2.90|3.04|0.110|0.114|0.120| |||**E**|||1.20|1.30|1.40|0.047|0.051|0.055| |||**e**|||1.78|1.90|2.04|0.070|0.075|0.081| |||**L**|||0.10|0.20|0.30|0.004|0.008|0.012| |||**L1**|||0.35|0.54|0.69|0.014|0.021|0.029| |||**HE**|||2.10|2.40|2.64|0.083|0.094|0.104| ||||||0
°|−−−|10
°|0
°|−−−|10
°| ||STYLE 11:|||||||||| ||PIN 1.||PIN 1.||ANODE|||||| ||||2.||CATHODE|||||| ||||3.||CATHODE−ANODE|||||| ## **SOLDERING FOOTPRINT** **==> picture [158 x 144] intentionally omitted <==** **----- Start of picture text -----**
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1 mm
_ (— inches )
0.8
0.031 a
**----- End of picture text -----**
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