# Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C

![Product image](https://novapart.co/image/farnell:3607930/)

**URL**: https://novapart.co/products/SBAT54CWT1G/small-signal-schottky-diode-dual-common-cathode-30
**SKU**: SBAT54CWT1G
**Manufacturer**: ONSEMI
**Price**: €0.0570
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-323 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 800mV |
| Forward Surge Current | 600mA |
| Reverse Recovery Time | 5ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3607930/)

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## Dual Series Schottky Barrier Diodes 

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30 VOLT<br>DUAL COMMON CATHODE<br>SCHOTTKY BARRIER DIODES<br>3<br>1 ®<br>2<br>SOT−323<br>CASE 419<br>STYLE 5<br>1 2<br>ANODE ANODE<br>ann<br>3<br>CATHODE<br>**----- End of picture text -----**<br>


## BAT54CW 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MARKING DIAGRAM MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **Rating Symbol Value Unit** 5CM Reverse Voltage VR 30 V 1 Forward Power Dissipation PF @ TA = 25 ° C 200 mW 5C = Device Code Derate above 25 ° C 2.0 mW/ ° C M = Date Code* Forward Current (DC) IF 200 Max mA = Pb−Free Package (Note: Microdot may be in either location) Non−Repetitive Peak Forward Current IFSM mA tp < 10 msec 600 *Date Code orientation may vary depending upon manufacturing location. Repetitive Peak Forward Current IFRM mA Pulse Wave = 1 sec, 300 Duty Cycle =  66% Junction Temperature TJ −55 to 125 ° C **ORDERING INFORMATION** ~~=~~ Storage Temperature Range Tstg −55 to +150 ° C **Device** ~~:~~ **Package** Stresses exceeding those listed in the Maximum Ratings table may damage the BAT54CWT1G SOT−323 device. If any of these limits are exceeded, device functionality should not be (Pb−Free) assumed, damage may occur and reliability may be affected. 

(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 

|**Device**<br>~~:~~|**Package**<br>~~:~~|**Shipping**†|
|---|---|---|
|BAT54CWT1G<br> ~~:~~|SOT−323<br>(Pb−Free)<br>~~:~~|3,000 /<br>Tape & Reel|
|SBAT54CWT1G|SOT−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SBAT54CWT3G|SOT−323<br>(Pb−Free)|10,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **January, 2024 − Rev. 12** 

**BAT54CWT1/D** 

**BAT54CW** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) 

|**Characteristic**<br>~~RG~~|**Symbol**<br>~~RG~~<br>~~es~~|**Min**<br>~~RG~~<br>~~GO~~<br>~~ee ee~~|**Typ**<br>~~RG~~<br>~~GO~~<br>~~ee~~|**Max**<br>~~RG~~<br>~~ee~~|**Unit**<br>~~RG~~|
|---|---|---|---|---|---|
|Reverse Breakdown Voltage<br>(IR= 10 A)<br>~~ee~~|V(BR)R<br>~~ee~~<br>~~es~~<br>~~ee~~|30<br>~~GO~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~|−<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~es~~|−<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)<br>~~ee~~|CT<br>~~es~~<br>~~ee~~<br>~~ee~~|−<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|7.6<br>~~ee~~<br>~~ee~~<br>~~es~~|10<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~|
|Reverse Leakage<br>(VR= 25 V)<br>~~F~~<br>~~OhdL~~|IR<br>~~ee~~<br>~~OhdL EI~~|−<br>~~ee ~~<br>~~EI~~|0.5<br> ~~es~~<br>~~EI~~|2.0<br>~~EI~~|Adc<br>~~EI~~|
|Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)<br>~~F~~<br>~~OhdL~~|VF<br>~~OhdL EI~~<br>~~ee~~|−<br>−<br>−<br>−<br>−<br>~~EI~~<br>~~ee~~|0.22<br>0.29<br>0.35<br>0.41<br>0.52<br>~~EI~~<br>~~ee~~|0.24<br>0.32<br>0.40<br>0.50<br>0.80<br>~~EI~~<br>~~ee~~|V<br>~~EI~~|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc, Figure 1)<br>~~F~~<br>~~OhdL~~<br>~~ee~~|trr<br>~~OhdL EI~~<br>~~ee~~<br>~~ee~~|−<br>~~EI~~<br>~~ee~~<br>~~ee~~|−<br>~~EI~~<br>~~ee~~<br>~~ee~~|5.0<br>~~EI~~<br>~~ee~~<br>~~ee~~|ns<br>~~EI~~<br>~~ee~~|



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820 Q<br>+10 V 2 k<br>100 H IF 0.1 F tr tp T IF<br>aa ‘ To sk aA<br>0.1 F m 7 10% trr T — -<br>DUT<br>50  OUTPUT 50  INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**BAT54CW** 

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100<br>125 ° C<br>a 85 ° C PLL _So=>*<br>10<br>F 150 ° C ISf<br>1.0<br>ee 25 ° C −40 ° C −55 ° C<br>0.1 LJ//if/ |/ L/L |<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

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1000<br>TA = 150 ° C<br>a ——<br>2 100 TA = 125 ° C<br>ee<br>10 TA = 85 ° C<br>—— =e<br>1.0 a<br>SS SS SS SS SS<br>TA = 25 ° C<br>0.1 eee e s<br>SS————eeeEEe<br>a<br>0.01<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

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14<br>12<br>10<br>8<br>6<br>4<br>Jf| |<br>2<br>ee<br>0 ee ee<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SC−70 (SOT−323)<br>CASE 419<br>ISSUE R<br>DATE 11 OCT 2022<br>SCALE 4:1<br>**----- End of picture text -----**<br>


## **GENERIC MARKING DIAGRAM** 

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XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>CANCELLED PIN 1. ANODE PIN 1. BASE PIN 1. CATHODE PIN 1. ANODE<br>2. N.C. 2. EMITTER 2. CATHODE  2. ANODE<br>3. CATHODE 3. COLLECTOR 3. ANODE  3. CATHODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. BASE  2. EMITTER  2. SOURCE  2. CATHODE  2. ANODE 2. CATHODE<br> 3. COLLECTOR  3. COLLECTOR  3. DRAIN  3. CATHODE-ANODE  3. ANODE-CATHODE 3. CATHODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42819B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SC−70 (SOT−323) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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