# Thyristor, 800 V, 50 µA, 300 mA, 500 mA, TO-92, 3 Pins

![Product image](https://novapart.co/image/farnell:3997052/)

**URL**: https://novapart.co/products/S8X5ECS2AP/thyristor-800-v-50-a-300-ma-500-to-92-3-pins
**SKU**: S8X5ECS2AP
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.1970
**Stock**: 1000+
**Lead Time**: 183 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | S8X5ECSx EV Series |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 3mA |
| On State Rms Current | 500mA |
| Thyristor Case Style | TO-92 |
| Average On State Current | 300mA |
| Gate Trigger Current Max | 50µA |
| Gate Trigger Voltage Max | 800mV |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 10A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3997052/)

**Thyristors** EV Series 0.8 Amp Sensitive SCRs 

~~HFC~~ ~~**RoHS**~~ 

## S8X5ECSx 

**Description** The S8X5ECSx offers a high static dv/dt with a low turn off (tq) time. It is specifically designed for GFCI (Ground Fault ~~—~~ Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter), RCD (Residual Current Device) and RCBO (Residual Current Circuit Breaker with Overload Protection) applications. All SCR junctions are glass-passivated to ensure long term reliability and parametric stability. 

|**Main Features**<br>eee|**Main Features**<br>eee|**Main Features**<br>eee|
|---|---|---|
|**Symbol**<br>IT(RMS)|**Value**<br>0.5|**Unit**<br>A|
|VDRM/ VRRM|800|V|
|VDSM(tp= 50 μs)<br>VRSM(tp= 50 μs)|1250<br>900|V<br>V|
|IGT|20 to 100|μA|



## **Features** 

   - Non-repetitive reverse surge peak off-state voltage (VRSM) up to 900V 

- Thru-hole packages 

- Surge current capability < 20Amps 

   - High dv/dt noise immunity 

- Blocking voltage ( VDRM / VRRM ) capability - up to 800V 

   - Improved turn-off time (tq) 

- Sensitive gate for direct 

- •  Non-repetitive direct surge microprocessor interface peak off-state voltage •  Halogen free and RoHS (VDSM) up to 1250V compliant 

## **Schematic Symbol** ~~Lo~~ 

**A** 

**G** 

* TO92 with "GAK" pin output **K** 

|**Absolute Maximum Ratings**<br>~~Lo~~|**Absolute Maximum Ratings**<br>~~Lo~~|
|---|---|
|**Symbol**<br>**Parameter**<br>**Value**|**Unit**|
|IT(RMS)<br>RMS on-state current (full sine wave)<br>TC= 85°C<br>0.5<br>IT(AV)<br>Average on-state current<br>TC= 85°C<br>0.3<br>~~GO~~|A<br>A|
|ITSM<br>Non repetitive surge peak on-state current<br>(Sine half wave, TJinitial = 25°C)<br>F= 50Hz<br>10<br>F= 60Hz<br>12<br>I2t<br>I2t Value for fusing<br>tp= 10 ms<br>F = 50 Hz<br>0.5<br>di/dt<br>Critical rate of rise of on-state current IG= 10mA<br>TJ= 125°C<br>80<br>IGM<br>Peak Gate Current<br>tp= 20μs<br>TJ= 125°C<br>0.5<br>PG(AV)<br>Averagegatepower dissipation<br>—<br>TJ= 125°C<br>0.2<br>Tstg<br>Storagejunction temperature range<br>—<br>—<br>-40 to 150<br>TJ<br>Operating junction temperature range<br>—<br>—<br>-40 to 125<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~QC~~<br>~~|~~<br>~~Pf~~|A<br>A<br>A2s<br>A/µs<br>A<br>W<br>°C<br>°C|



© 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 

**Thyristors** EV Series 0.5 Amp Sensitive SCRsEV Series 0.8 Amp Sensitive SCRs 

## **Electrical Characteristics (TJ = 25°C, unless otherwise specified)** 

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**----- Start of picture text -----**<br>
Value<br>Symbol Description Test Conditions Limit Unit<br>S8X5ECS S8X5ECS2<br>IGT DC Gate Trigger Current RLV = 100 ΩD = 6V  Max.Min. 10020 2050 μμAA<br>VGT DC Gate Trigger Voltage RLV = 100 ΩD = 6V  Max. 0.8 V<br>VGRM Peak Reverse Gate Voltage IRG = 10μA Min. 8 V<br>IH Holding Current Initial Current = 20mARGK = 1 KΩ Max. 3 mA<br>TJ = 125°C<br>dv/dt Critical Rate-of-Rise of  VD = 67% of VDRM Min. 40 V/μs<br>Off-State Voltage Exp. Waveform<br>RGK =1 kΩ<br>VD = 1/2 VDRM<br>VGD Gate Non-Trigger Voltage RGK =1 kΩ Min. 0.2 V<br>TJ = 125°C<br>tq Turn-Off Time IT = 0.5A Max. 35 μs<br>IG=10mA<br>tgt Turn-On Time PW = 15μsec Typ. 2.3 μs<br>IT = 1.6A(pk)<br>**----- End of picture text -----**<br>


## **Static Characteristics (TJ = 25°C, unless otherwise specified)** 

|**Symbol**|**Description**|**Test Conditions**|**Limit**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM<br>VT0|Peak On-State Voltage<br>Threshold Voltage|0.5A device ITM= 4A tp= 380μs<br>-|MAX.<br>MAX|1.8<br>1.03|V<br>V|
|RD|Dynamic Resistance|-|MAX|106|mΩ|
|IDRM/ IRRM|Off-State Current, Peak Repetitive|TJ= 25°C<br>TJ= 125°C|MAX.<br>MAX.|3<br>500|μA<br>μA|



|**Thermal Resistances**|**Thermal Resistances**||||
|---|---|---|---|---|
|**Symbol**|**Description**|**Test Conditions**|**Value**|**Unit**|
|Rth(JC)|Junction to case (AC)|IT= 0.8A(RMS)<br>1|35|°C/W|
|Rth(j-a)|Junction to ambient|IT= 0.8A(RMS)<br>1|150|°C/W|



**1.** 60Hz AC resistive load condition, 100% conduction. 

© 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 

**Thyristors** EV Series 0.5 Amp Sensitive SCRsEV Series 0.8 Amp Sensitive SCRs 

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**----- Start of picture text -----**<br>
Figure 1:  Normalized DC Gate Trigger Current For All<br>Quadrants vs. Junction Temperature<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-40 -25 -10 5 20 35 50 65 80 95 110 125<br>Junction Temperature (TJ) -- ( �)<br>�)<br>(T = 25J<br>GT<br>/ I<br>GT<br>Ratio of I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 3:  Normalized DC Gate Trigger Voltage<br>vs. Junction Temperature<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-40 -25 -10 5 20 35 50 65 80 95 110 125<br>Junction Temperature (TJ) -- ( �)<br>Figure 5:  Power Dissipation (Typical)<br>vs. RMS On-State Current<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 0.1 0.2 0.3 0.4 0.5<br>RMS On-state Current [I T(RMS)] - (Amps)<br>�)<br> (T = 25J<br>GT<br> / V<br>GT<br>Ratio of V<br>] - (Watts)<br>D(AV)<br>Average On-State Power<br>Dissipation [P<br>**----- End of picture text -----**<br>


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Figure 2:  Normalized DC Holding Current<br>vs. Junction Temperature<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-40 -25 -10 5 20 35 50 65 80 95 110 125<br>Junction Temperature (TJ) -- ( �)<br>Figure 4:  On-State Current vs. On-State<br>Voltage (Typical)<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0.5 0.8 1.1 1.4 1.7 2.0<br>Instantaneous On-state Voltage (VT) – Volts<br>�)<br> (T = 25J<br>H<br> / I<br>H<br>Ratio of I<br>) –T<br>Amps<br>Intantaneous On-state Current (I<br>**----- End of picture text -----**<br>


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Figure 6:  Maximum Allowable Case Temperature<br>vs. On-State Current<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
130<br>CURRENT WAVEFORM: Sinusoidal<br>LOAD: Resistive or Inductive<br>CONDUCTION ANGLE: 180 [o]<br>CASE TEMPERATURE: Measured as<br>120 shown on dimensional drawings<br>110<br>100<br>90<br>0.0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50<br>RMS On-state Current [IT(RMS)] - Amps<br>) - Maximum Allowable Case Temperature (TCo C<br>**----- End of picture text -----**<br>


© 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 

**Thyristors** EV Series 0.5 Amp Sensitive SCRsEV Series 0.8 Amp Sensitive SCRs 

## **Figure 7:  Surge Peak On-State Current vs. Number of Cycles** 

**==> picture [504 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>Supply Frequency: 60Hz Sinusoidal<br>10 Load: Resistive<br>Specific Case TemperatureRMS On-State Current [IT(RMS)]: Max Rated Value at<br>Notes:<br>1. Gate control may be lost during and immediately<br>following surge current interval.<br>2. Overload may not be repeated until junction<br>temperature has returned to steady-state rated value.<br>0<br>1 10 100 1000<br>Surge Current Duration - Full Cycle<br>) – Amps.<br>TS M<br>Current (I<br>Peak Surge (Non-repetitive) On-State<br>**----- End of picture text -----**<br>


## **Soldering Parameters** 

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**----- Start of picture text -----**<br>
Reflow Condition Pb – Free assembly<br>- Temperature Min (Ts(min)) 150°C  T P t P<br>Pre Heat - Temperature Max (Ts(max)) 200°C Ramp-up<br>Average ramp up rate (Liquidus Temp) (T- Time (min to max) (ts) L) to peak 60 – 180 secs5°C/second max T S(max) T L t L<br>TS(max) to TL - Ramp-up Rate 5°C/second max Preheat Ramp-down<br>Reflow - Temperature (TL) (Liquidus) 217°C  T S(min)<br>- Time (min to max) (ts) 60 – 150 seconds t S<br>Peak Temperature (TP) 260 [+0/-5]  °C<br>Ramp-down RateTime within 5°C of actual peak Temperature (tp) 20 – 40 seconds5°C/second max 25 time to peak temperature Time<br>Time 25°C to peak Temperature (TP) 8 minutes Max.<br>Do not exceed 280°C<br>Temperature<br>**----- End of picture text -----**<br>


© 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 

**Thyristors** EV Series 0.5 Amp Sensitive SCRsEV Series 0.8 Amp Sensitive SCRs 

## **Physical Specifications** 

|**Terminal Finish**|100% Matte Tin-plated.|
|---|---|
|**Body Material**|UL Recognized compound meeting fammability<br>ratingV-0.|
|**Lead Material**|Copper Alloy|



## **Design Considerations** 

Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. 

## **Reliability/Environmental Tests** 

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Test Specifications and Conditions<br>MIL-STD-750, M-1040, Cond A Applied Peak AC<br>AC Blocking voltage @ 125°C for 1008 hours<br>MIL-STD-750, M-1051,<br>Temperature Cycling 1000 cycles; -55°C to +150°C; 15-min dwell-time<br>EIA / JEDEC, JESD22-A101<br>Temperature/Humidity 1008 hours; 320V - DC: 85°C; 85% rel humidity<br>UHAST  JESD22-A118, 96 hours, 130°C, 85%RH<br>High Temp Storage MIL-STD-750, M-1031,1008 hours; 150°C<br>Low-Temp Storage 1008 hours; -40°C<br>Resistance to<br>MIL-STD-750 Method 2031<br>Solder Heat<br>Solderability ANSI/J-STD-002, category 3, Test A<br>Lead Bend MIL-STD-750, M-2036 Cond E<br>**----- End of picture text -----**<br>


## **Dimensions – TO-92** 

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**----- Start of picture text -----**<br>
A Inches Millimeters<br>T   Measuring PointC Dimension<br>Min Max Min Max<br>A 0.175 0.205 4.450 5.200<br>B<br>B 0.170 0.210 4.320 5.330<br>C 0.500 12.70<br>D 0.135 3.430<br>SeatingPlane E 0.125 0.165 3.180 4.190<br>F 0.080 0.105 2.040 2.660<br>C G 0.016 0.021 0.407 0.533<br>Anode H 0.045 0.055 1.150 1.390<br>I 0.095 0.105 2.420 2.660<br>J 0.015 0.020 0.380 0.500<br>G Cathode<br>H<br>Gate<br>I<br>D<br>E<br>J F<br>F<br>**----- End of picture text -----**<br>


## **Packing Option** 

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Part Number Marking Weight Packing Mode Base Quantity<br>S8X5ECS S8X5ECS 0.217G  Bulk   2500<br>S8X5ECSRP S8X5ECS 0.217G Tape & Reel 2000<br>S8X5ECSAP S8X5ECS 0.217G Ammo Pack 2000<br>S8X5ECS2 S8X5ECS2 0.217G Bulk 2500<br>S8X5ECS2RP S8X5ECS2 0.217G Tape & Reel 2000<br>S8X5ECS2AP S8X5ECS2 0.217G Ammo Pack 2000<br>**----- End of picture text -----**<br>


© 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 

**Thyristors** EV Series 0.5 Amp Sensitive SCRsEV Series 0.8 Amp Sensitive SCRs 

**==> picture [504 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications<br>0.236 0.02 (0.5 ) 0.098 (2.5) MAX<br>(41.0)1.6 (6.0) 1.2 6(32.0)<br>0.708<br>(18.0) 0.354<br>(9.0)<br>(12.7)0. 5 0.1 (2.54) Gate Cathode<br>0.2 (5.08) Anode<br>14.17(360.0) 0.157 (4.0) DIA<br>Flat up<br>1.9 7<br>(50.0)<br>Dimensions<br>are in inches<br>Meets all EIA-468-C Standards Direction of Feed (and millimeters).<br>TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications<br>0.236(6.0 ) 0.02 (0.5 ) 0.098 (2.5) MAX 1.27<br>1.62 (32.2)<br>(41.2)<br>0.708<br>(18.0) 0.35 4<br>(9.0 )<br>(12.7)0. 5 0.1 (2.54) 0.2 (5.08)CathodeAnodeGate 0.157(4.0 ) DIA<br>Flat down<br>Meets all  25 Devices per fold<br>EIA-468-C Standards<br>1.85<br>(47.0)<br>12. 2<br>(310.0 )<br>Dimensions<br>are in inche s<br>1.85 (and millimeters).<br>(47.0)<br>13. 3<br>(338.0)<br>Part Numbering System Part Marking System<br>S 8X5 EC S xx<br>Package Type<br>Series Blank:  Bulk Pack<br>S:  SCR      RP:  Reel Pack Line1 = Littelfuse Part NumberLine2 = continuation…Littelfuse Part Number<br>     AP:  Ammo Pack Y = Last Digit of Calendar Year<br>Voltage M = Letter Month Code (A-L for Jan-Dec)<br>8:  800V Sesitivity & Type L = Location Code<br>S:  100µA Sensitive SCR DD = Calendar Date<br>S2:  50µA Sensitive SCR<br>Current TO-92<br>X5:  0.5A Package Type<br>EC:  TO-92 Center Anode<br>Direction of Feed<br>**----- End of picture text -----**<br>


**Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications.  Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 

© 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 



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