# Thyristor, 600 V, 200 µA, 510 mA, 800 mA, SOT-89, 3 Pins

![Product image](https://novapart.co/image/farnell:1827751RL/)

**URL**: https://novapart.co/products/S6X8BSRP/thyristor-600-v-200-a-510-ma-800-sot-89-3-pins
**SKU**: S6X8BSRP
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.2470
**Stock**: 10+
**Lead Time**: 155 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200µA; Current It av:510mA; On State RMS Current IT(rms):800mA; Thyristor Case Style:SOT-89; No. of Pins:3Pins; Peak

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2014) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 5mA |
| On State Rms Current | 800mA |
| Thyristor Case Style | SOT-89 |
| Average On State Current | 510mA |
| Gate Trigger Current Max | 200µA |
| Gate Trigger Voltage Max | 800mV |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 8A |
| Peak Repetitive Off State Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1827751RL/)

SxX8xSx 

Thyristor Datasheet 

SxX8xSx Series EV Series 0.8 A Sensitive SCRs 

## Product Description 

This new component series offers high static dv/dt and low turn off time (tq) sensitive SCR. It is specifically designed for Ground Fault Circuit Interrupter (GFCI) and Gas Ignition applications. All SCRs junctions are glasspassivated to ensure long term reliability and parametric stability. 

## Features 

## Agency Approvals and Environmental 

Environmental Approvals 

- Surge capability > 10 A 

- Blocking voltage (VDRM / VRRM) capability up to 800 V 

- High dv/dt noise immunity 

- Improved turn-off time (tq) < 25 µsec 

- Sensitive gate for direct microprocessor interface 

- Through-hole and surface-mount packages 

## Product Summary 

**==> picture [186 x 48] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Characteristic|Value|Unit|
|IT(RMS)|0.8|A|
|VDRM / VRRM|400, 600, or 800|V|
|IGT|5 to 200|µA|

**----- End of picture text -----**<br>


- RoHS compliant and Halogen-Free 

## Applications 

The SxX8xSx EV series is specifically designed for Ground Fault Circuit Interrupter (GFCI) and gas ignition applications. 

## Schematic Symbol 

1 

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1. Maximum Ratings ........................................................................................................................................... 3 2. Thermal Characteristics .................................................................................................................................. 3 3. Electrical Characteristics (TJ = 25 °C unless otherwise specified) ................................................................. 3 4. Static Characteristics (TJ = 25 °C unless otherwise specified) ....................................................................... 3 5. Performance Curves ....................................................................................................................................... 4 6. Soldering Parameters ..................................................................................................................................... 7 7. Physical Specifications .................................................................................................................................... 7 8. Environmental Specifications.......................................................................................................................... 7 9. Design Considerations .................................................................................................................................... 8 10. Package Dimensions .................................................................................................................................... 9 11. Part Numbering and Marking ...................................................................................................................... 10 12. Product Selector ......................................................................................................................................... 11 13. Packing Options .......................................................................................................................................... 11 14. Packing Specifications ................................................................................................................................ 11 

2 

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Thyristor Datasheet 

## 1. Maximum Ratings 

**==> picture [448 x 190] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Characteristic|Conditions|Value|Unit|
|TO-92|TC = 55 °C|
|IT(RMS)|RMS On-state Current (Full Sine Wave)|ee|SOT-89|TC = 60 °C|0.8|A|
|eees|SOT-223|TL = 60 °C|
|TO-92|TC = 55 °C|
|IT(AV)|Average On-state Current|a|SOT-89|TC = 60 °C|0.51|A|
|SEee|SOT-223|TL = 60 °C|
|ITSM|Non-repetitive Surge Peak On-state Current|SOT-89 TO-92|ee|f = 50 Hz|eee|8|A|
|(Single Cycle, TJ,Initial = 25 °C)|SOT-223|f = 60 Hz|10|
|I|[2]|t|I|[2]|t Value for Fusing|tp = 10 ms|f = 50 Hz|0.32|A|[2]|s|
|rr|tp = 8.3 ms|ee|f = 60 Hz|eee|0.41|
|TO-92|
|Critical Rate of Rise of On-state Current|
|di/dt|IG =10 mA|SOT-223 SOT-89|TJ = 125 °C|oe|50|A/µs|
|IGM|es|Peak Gate Current|tp = 10 µs|TJ = 125 °C|1.0|A|
|PG(AV)|es|Average Gate Power Dissipation|ee|-|TJ = 125 °C|0.1|W|
|TSTG|se|Storage Junction Temperature Range|-|-|-40 to 150|°C|
|TJ|Pf|Operating Junction Temperature Range|-|-|-40 to 125|°C|

**----- End of picture text -----**<br>


## 2. Thermal Characteristics 

**==> picture [449 x 66] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Symbol|Characteristic|Value|Unit|
|TO-92|75|
|Rth(JC)|Thermal Resistance, junction-to-case (AC)|IT = 0.8 A(RMS)|[1 ]|SOT-223|30|°C/W|
|SOT-89|50|
|TO-92|150|
|Rth(JA)|Thermal Resistance, junction-to-ambient|IT = 0.8 A(RMS)|[1]|SOT-223|60|°C/W|
|SOT-89|90|

**----- End of picture text -----**<br>


Note 1: 60 Hz AC resistive load condition, 100% conduction 

3. Electrical Characteristics (TJ = 25 °C unless otherwise specified) 

**==> picture [483 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|SxX8yS1|SxX8yS2|SxX8yS|
|Symbol|Description|Conditions|Unit|
|Seee|Pop|Min|ee|Typ|yp|Max|fp|Min|Typ|Max|hp|Min|Typ|Max|
|IGT|DC Gate Trigger Current|VD = 6 V, RL = 10|00|0.5|5|1|50|15|200|µA|
|VGT|a|DC Gate Trigger Voltage|GO|VD = 6 V, RL = 10|-|-|0.8|-|-|0.8|-|-|0.8|V|
|OO|
|VGRM|Peak Reverse Gate Voltage|IRG = 10 µA|5|-|5|-|5|-|V|
|IH|me|Holding Current|Initial current = 20 A RGK|,|-|5|-|5|-|5|mA|
|(dv/dt)s|Critical Rate-of-rise of  Off-stage Voltage|RGK|TJ = 125 °C, VD =VDRM/VRRM,|75|-|75|-|75|-|V/µs|
|niet|
|tq|Turn-off Time|TJ = 25 °C @ 600 V, RGK|-|30|-|25|-|25|µs|
|re|ce|sO|
|tgt|2|Turn-on Time|IG = 10 mA, PW|T = 1.6 APK|-|2|-|-|2|-|-|2|-|µs|
|VGD|Gate Non-trigger Voltage|VD = VDRM, RGK = 1|J = 125 °C|0.2|-|0.2|-|0.2|-|V|
|Po|we|EE|
|Note: x =  voltage /100, y = package|

**----- End of picture text -----**<br>


## 4. Static Characteristics (TJ = 25 °C unless otherwise specified) 

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**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Value|Unit|
|Symbol|Description|Conditions|
|Min|Max|
|VTM|Peak On-state Voltage|ITM = 1.6 Apk|-|1.70|V|
|es|ee|||
|TJ = 25 °C @ VD = VDRM, RGK|-|3|
|IDRM|Off-state Current, Peak Repetitive|µA|
|TJ = 125 °C @ VD = VDRM, RGK|-|500|
|ee eeeeeee|
|3|Specifications are subject to change without notice.|
|Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.|
|© 2021 Littelfuse, Inc.|
|Revised: 6/11/2021|
|AppliedLittelfuse|Littelfuse|||Answers|Delivered|wid|| IXYSA Littelfuse Technology IXYSA Littelfuse TechnologyA Littelfuse Technology Littelfuse Technology Technology|a|

**----- End of picture text -----**<br>


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SxX8xSx 

Thyristor Datasheet 

## 5. Performance Curves 

Figure 1. Normalized DC Gate Trigger Current for All Quadrants vs. Junction Temperature 

**==> picture [195 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 )<br>\<br>|<br>|<br>|<br>1.5 i<br>|<br>|<br>|<br>1.0 |<br>|<br>|<br>|<br>|<br>|<br>0.5<br>|<br>|<br>||ut<br>|<br>|<br>0.0<br>-55 -40 -25 -10 5 20 35 50 65 80 95 110 125<br>Junction Temperature, TJ (°C)<br>Figure 3. Normalized DC Gate Trigger Voltage vs. Junction<br>Temperature<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>-40 -25 -10 5 20 35 50 65 80 95 110 125<br>Junction Temperature, TJ (°C)<br>C) (T° = 25 J<br>Ratio of  GT<br>/ I<br>IGT<br> (V)<br>GT<br>V<br>Gate Trigger Voltage<br>**----- End of picture text -----**<br>


Figure 3. Normalized DC Gate Trigger Voltage vs. Junction Temperature 

Figure 2. Normalized DC Holding Current vs. Junction Temperature 

**==> picture [197 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.0<br>3.0<br>2.0<br>1.0<br>STE<br>0.0<br>-55 -40 -25 -10 5 20 35 50 65 80 95 110 125<br>Junction Temperature, TJ (°C)<br>Figure 4. Typical On-state Current vs. On-state Voltage<br>10<br>8<br>SxX8xS1<br>6<br>SxX8xS<br>4<br>SxX8xS2<br>2<br>0<br>0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5<br>Instantaneous On-state Voltage, VT (V)<br>Ratio of  C) (T° = 25 JH<br> / I<br>IH<br>Instantaneous On-state Current, I (A)T<br>**----- End of picture text -----**<br>


Figure 4. Typical On-state Current vs. On-state Voltage 

4 

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Figure 5. Typical Power Dissipation vs. RMS On-state Current 

**==> picture [192 x 592] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.8<br>0.7<br>Current Waveform: Sinusoidal<br>0.6 Load: REsistive or Inductive<br>Conduction Angle: 180°<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>RMS On-state Current, IT(RMS) (A)<br>Figure 7. Typical DC Gate Trigger Current with RGKGK vs. Junction<br>Temperature for S6X8xS<br>100 ————<q——_. RGK =  10 QO<br>10 ————__ RGK =  100 O—<br>1 e e RGK =<br>—— RGK =  4701 KOOW<br>0.1<br>No RGK<br>0.01<br>-40 -15 10 35 60 85 110 135<br>Junction Temperature, TJ (°C)<br>Figure 9. Typical DC Holding Current with RGK vs. Junction GK vs. Junction  vs. Junction<br>Temperature for S6X8xS<br>1000<br>100 — RGK =<br>10 ies , RGK =  10——<br>—_—__—————__ RGK =  470100 00D<br>o o RGK =<br>1<br>a 1kOQ——<br>No RGK<br>0.1<br>-40 -15 10 35 60 85 110 135<br>Junction Temperature, TJ (°C)<br> (W)<br>D(AV)<br>P<br>Average On-state Power Dissipation,<br> (mA)<br>GT<br>Trigger Current, I<br> (mA)<br>H<br>Holding Current, I<br>**----- End of picture text -----**<br>


Figure 7. Typical DC Gate Trigger Current with RGKGK vs. Junction Temperature for S6X8xS 

Figure 9. Typical DC Holding Current with RGK vs. Junction GK vs. Junction  vs. Junction Temperature for S6X8xS 

Figure 6. Maximum Allowable Case Temperature vs. On-state Current 

**==> picture [192 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
130<br>120<br>110<br>100<br>90 TO-92 SOT-89 and SOT-223<br>80<br>70 Current Waveform: Sinusoidal<br>Load: Resistive or Inductive<br>Conduction Angle: 180°<br>60 Case Temperature: Measured as<br>shown on dimensional drawings<br>50<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>RMS On-state Current, IT(RMS) (A)<br>C)Max Allowable Case Temperature, T (° C<br>**----- End of picture text -----**<br>


Figure 8. Typical DC Gate Trigger Current with RGK vs. Junction Temperature for S8X8xS 

**==> picture [192 x 373] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 — RGK =  100.<br>10 a RGK =  100 0<br>1 = RGK =<br>—— RGK =  4701kO—_ OW<br>0.1<br>No RGK<br>0.01<br>-40 -15 10 35 60 85 110 135<br>Junction Temperature, TJ (°C)<br>Figure 10. Typical DC Holding Current with RGK vs. Junction GK vs. Junction  vs. Junction<br>Temperature for S8X8xS<br>100<br>RGK =<br>RGK =<br>10 1000.<br>== RGK =<br>RGK =<br>_— 470QW<br>1 1kKOW<br>No RGK<br>—@—_<br>0.1<br>-40 -15 10 35 60 85 110 135<br>Junction Temperature, TJ (°C)<br> (mA)<br>GT<br>Trigger Current, I<br> (mA)<br>H<br>Holding Current, I<br>**----- End of picture text -----**<br>


Figure 10. Typical DC Holding Current with RGK vs. Junction GK vs. Junction  vs. Junction Temperature for S8X8xS 

5 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. ~~Oo~~ Revised: 6/11/2021 

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Figure 11. Typical DC Static dv/dt with RGK vs. Junction Temperature for S6X8xS 

Figure 12. Typical DC Static dv/dt with RGK vs. Junction Temperature for S8X8xS 

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**----- Start of picture text -----**<br>
10000<br>————.-..?$+$|_<_ RGK =  100—__<br>1000<br>—_—oOoOmq____ RGK =  220 0<br>oo RGK =<br>100 To RGK =  4701kO—0<br>10<br>25 45 65 85 105 125<br>Junction Temperature, TJ (°C)<br>Static dv/dt (V/µs)<br>**----- End of picture text -----**<br>


**==> picture [192 x 153] intentionally omitted <==**

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10000<br>RGK =<br>——————__ 100——<br>1000 RGK =<br>— 220 0,<br>oF RGK =  T100—<br>100 S $ RGK =  1k<br>10<br>25 45 65 85 105 125<br>Junction Temperature, TJ (°C)<br>Static dv/dt (V/µs)<br>**----- End of picture text -----**<br>


Figure 13. Typical DC Turn-off Time with RGK vs. Junction Temperature for S6X8xS 

Figure 14. Typical DC Turn-off Time with RGK vs. Junction Temperature for S8X8xS 

**==> picture [440 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
22 26<br>20 24<br>18 RGK =  2220 RGK =<br>16 RGK =  47001 a 18 RGK =  47001 oO<br>14 16<br>12 14<br>10 RGK =  100—Q 12 RGK =  1009<br>86 RGK =  _——— 108 RGK =  100——_<br>6<br>4 — 100 4 eS -<br>2 2<br>0 0<br>-40 -15 10 35 60 85 110 135 -40 -15 10 35 60 85 110 135<br>Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)<br>Figure 15. Surge Peak On-state Current vs. Number of Cycles<br>Notes<br>1. Gate control may be lost during and immediately<br>10 following surge current interval.<br>2. Overload may not be repeated until junction<br>temperature has returned to steady-state rated value.<br>0.8 A Components<br>Supply Frequency: 60 Hz Sinusoidal<br>Load: Resistive<br>RMS Onstate Current [IT,RMS]: Max rated value<br>at specific case temperature<br>1<br>1 10 100 1000<br>Surge Current Duration - Full Cycle<br>Turn-off Time, t (µs)q Turn-off Time, t (µs)q<br> (A)<br>TSM<br>Current, I<br>Peak Surge (Non-repetitive) On-state<br>**----- End of picture text -----**<br>


## Figure 15. Surge Peak On-state Current vs. Number of Cycles 

1. Gate control may be lost during and immediately following surge current interval. 

2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 

6 

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Figure 16. Peak Repetitive Sinusoidal Pulse Current 

. 

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180<br>160<br>140<br>120<br>100<br>1 Hz<br>80<br>12 Hz<br>60<br>40 60 Hz<br>200 mSks —>|<br>1 10 100<br>Pulse Current Duration, tw (µs)<br>(A)<br>TM<br>Peak Discharge Current, I<br>**----- End of picture text -----**<br>


## 6. Soldering Parameters 

|Parameter|Parameter|Value|
|---|---|---|
|Reflow Condition||Pb-free Assembly|
|Pre-Heat|Temperature Min, TS(Min)|150 °C|
||Temperature Max, TS(Max)|200 °C|
||Time (Min to Max), ts|60 to 180 s|
|Average Ramp-up Rate Liquidus Temp., TLto peak||5 °C/s (Max)|
|TS(Max)to TLRamp-up Rate||5 °C/s (Max)|
|Reflow|Temperature, TLLiquidus|217 °C|
||Time, tS|60 to 150 s|
|Peak Temperature, TP||260 °C (±5 °C)|
|Time within 5 °C of Actual Peak Temperature, tP||20 to 40 s|
|Ramp-down Rate||5 °C/s (Max)|
|Time 25 °C to Peak Temperature, TP||8 minutes (Max)|
|Do Not Exceed||280 °C|



## 7. Physical Specifications 

|Device Feature|Detail|
|---|---|
|Terminal Finish|100% Matte Tin-plated|
|Body Material|UL Recognized Compound meeting Flammability<br>RatingV-0|
|Lead Material|Copper Alloy|



## 8. Environmental Specifications 

|Test|Specifications and Conditions|
|---|---|
|AC Blocking|MIL-STD-750, M-1040, Cond A Applied Peak<br>AC voltage@110°C for 1008 hours|
|Temperature Cycling|MIL-STD-750, M-1051, 100 cycles; -40°C to<br>+150°C;15 min dwell time|
|Temperature/Humidity|EIA / JEDEC, JESD22-A101 1008 hours;<br>320V - DC: 85°C;85% relative humidity|
|High-temp Storage|MIL-STD-750, M-1031, 1008 hours, 150°C|
|Low-temp Storage|1008 hours, -40°C|
|Resistance to Solder<br>Heat|MIL-STD-750 Method 2031|
|Solderability|ANSI/J-STD-002, category 3, Test A|
|Lead Bend|MIL-STD-750, M-2036 Cond E|



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## 9. Design Considerations 

Careful selection of the correct component for the application's operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. 

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## 10. Package Dimensions 

TO-92 

|Dimension|Millimeters|Millimeters|Inches|Inches|
|---|---|---|---|---|
||Min|Max|Min|Max|
|A|4.450|5.200|0.175|0.205|
|B|4.320|5.330|0.170|0.210|
|C|12.700|-|0.500|-|
|D|3.430|-|0.135|-|
|E|3.180|4.190|0.125|0.165|
|F|2.040|2.660|0.080|0.105|
|G|0.407|0.533|0.016|0.021|
|H|1.150|1.390|0.045|0.055|
|I|2.420|2.660|0.095|0.105|
|J|0.380|0.500|0.015|0.020|



## SOT-223 

*Dimensions in millimeters (inches) 

|Dimension|Millimeters|Millimeters|Millimeters|Inches|Inches|Inches|
|---|---|---|---|---|---|---|
||Min|Typ|Max|Min|Typ|Max|
|A|6.30|6.50|6.70|0.248|0.256|0.264|
|B|3.30|3.50|3.70|0.130|0.138|0.146|
|C|-|-|1.80|-|-|0.071|
|D|0.02|-|0.10|0.001|-|0.004|
|E|2.90|3.00|3.15|0.114|0.118|0.124|
|F|0.60|0.70|0.85|0.024|0.027|0.034|
|G|-|2.30|-|-|0.090|-|
|H|-|4.60|-|-|0.181|-|
|I|6.70|7.00|7.30|0.264|0.276|0.287|
|J|0.24|0.26|0.35|0.009|0.010|0.014|
|K|10°MAX||||||



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SOT-89 

*Dimensions in millimeters (inches) 

|Dimension|Millimeters|Millimeters|Millimeters|Inches|Inches|Inches|
|---|---|---|---|---|---|---|
||Min|Typ|Max|Min|Typ|Max|
|A|4.40|-|4.60|0.173|-|0.181|
|B|2.29|-|2.60|0.090|-|0.102|
|C|1.40|-|1.60|0.055|-|0.063|
|D|3.94|-|4.25|0.155|-|0.167|
|E|0.81|-|1.20|0.032|-|0.047|
|F|-|1.50|-|-|0.059|-|
|G|-|3|-|-|0.118|-|
|H|0.35|-|0.44|0.014|-|0.017|
|I|0.36|-|0.48|0.014|-|0.019|
|J|-|1.65|-|-|0.065|-|



## 11. Part Numbering and Marking 

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## 12. Product Selector 

|Part Number|Voltage|Voltage|Voltage|Gate Sensitivity|Package|
|---|---|---|---|---|---|
||400 V|600 V|800 V|||
|SxX8BS|X|X|-|200 µA|SOT-89|
|SxX8ES|X|X|X|200 µA|TO-92|
|SxX8TS|X|X|X|200 µA|SOT-223|
|SxX8BS1|X|X|-|5 µA|SOT-89|
|SxX8ES1|X|X|X|5 µA|TO-92|
|SxX8TS1|X|X|X|5 µA|SOT-223|
|SxX8BS2|X|X|-|50 µA|SOT-89|
|SxX8ES2|X|X|X|50 µA|TO-92|
|SxX8TS2|X|X|X|50 µA|SOT-223|



## 13. Packing Options 

|Part Number|Marking|Weight|Packing Mode|Base Quantity|
|---|---|---|---|---|
|SxX8ESy|SxX8ESy|0.217 g|Bulk|2500|
|SxX8ESyAP|SxX8ESy|0.217 g|Ammo Pack|2000|
|SxX8ESyRP|SxX8ESy|0.217 g|Tape & Reel|2000|
|SxX8TSyRP|SxX8TSy|0.120 g|Tape & Reel|1000|
|SxX8BSyRP|xX8y|0.053 g|Tape & Reel|1000|
|SxX8BSyRP1|xX8y|0.053 g|Tape & Reel|1000|



Note: x = voltage/100, y = gate sensitivity 

## 14. Packing Specifications 

## TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications 

Meets all EIA-468-C Standards 

11 

Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ~~sss‘~~ © 2021 Littelfuse, Inc. Revised: 6/11/2021 

5 @ C4Expertise Appliedlittetuse| Answers Delivered BIXYSA Littelfuse Technology 

SxX8xSx 

Thyristor Datasheet 

## TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications 

Meets all EIA-468-C Standards 

## SOT-89 Reel Pack (RP) Specifications 

12 

Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/11/2021 ~~Oo~~ 

C4Expertise Appliedlittetuses | Answers Delivered@ WA/IXYSA[Littelfuse][Technology] 

SxX8xSx 

Thyristor Datasheet 

SOT-89 Reel Pack (RP1) Specifications 

SOT-223 Reel Pack (RP) Specifications 

## **For additional information please visit www.Littelfuse.com/powersemi** 

**Disclaimer Notice -** Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. 

Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 

13 

Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/11/2021 



## Links

- [View this product on Novapart](https://novapart.co/products/S6X8BSRP/thyristor-600-v-200-a-510-ma-800-sot-89-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/s6x8bsrp/triac-600v-0-8a-sot-89/dp/1827751RL)
---

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