# Bipolar (BJT) Single Transistor, NPN, 50 V, 100 mA, 125 mW, SC-75, Surface Mount

![Product image](https://novapart.co/image/farnell:3368661/)

**URL**: https://novapart.co/products/S2SC4617G/bipolar-bjt-single-transistor-npn-50-v-100-ma-125
**SKU**: S2SC4617G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0640
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 125mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 180MHz |
| Transistor Case Style | SC-75 |
| Dc Current Gain Hfe Min | 120hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368661/)

## 2SC4617G, S2SC4617G 

## NPN Silicon General Purpose Amplifier Transistor 

This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium. 

## **Features** 

- Reduces Board Space 

## **http://onsemi.com** 

**NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT** 

- High hFE, 210−460 (typical) 

- Low VCE(sat), < 0.5 V 

- Available in 8 mm, 7 inch/3000 Unit Tape and Reel 

**SC−75 CASE 463−01 STYLE 1** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**==> picture [41 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>**----- End of picture text -----**<br>


• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant* **MAXIMUM RATINGS** (TJ = 25 ° C) **Rating Symbol Value Unit** Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 BASE EMITTER Emitter-Base Voltage V(BR)EBO 5.0 Vdc **MARKING DIAGRAM** Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be B9 M assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** ~~=== .~~ 1 **Characteristic Symbol Max Unit** B9 = Device Code Power Dissipation (Note 1) PD 125 mW M = Date Code* Junction Temperature TJ 150 ° C = Pb−Free Package 1. ~~———~~ Storage Temperature RangeDevice mounted on a FR-4 glass epoxy printed circuit board using theTstg −55 ~ +150 ~~a~~ ° C e upon manufacturing location. minimum recommended footprint. 

**MARKING DIAGRAM** B9 M 1 B9 = Device Code M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) 

*Date Code orientation may vary depending upon manufacturing location. 

**ORDERING INFORMATION Device Package Shipping**[†] 2SC4617G SC−75 3,000/Tape & Reel (Pb−Free) S2SC4617G SC−75 3,000/Tape & Reel (Pb−Free) 2SC4617T1G SC−75 3,000/Tape & Reel (Pb−Free) ~~=——~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **2SC4617/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 6** 

**2SC4617G, S2SC4617G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Collector-Base Breakdown Voltage (IC= 50�Adc, IE= 0)|V(BR)CBO|50|−|−|Vdc|
|Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB= 0)|V(BR)CEO|50|−|−|Vdc|
|Emitter-Base Breakdown Voltage (IE= 50�Adc, IE= 0)|V(BR)EBO|5.0|−|−|Vdc|
|Collector-Base Cutoff Current (VCB= 30 Vdc, IE= 0)|ICBO|−|−|0.5|�A|
|Emitter-Base Cutoff Current (VEB= 4.0 Vdc, IB= 0)|IEBO|−|−|0.5|�A|
|Collector-Emitter Saturation Voltage (Note 2)<br>(IC= 60 mAdc, IB= 5.0 mAdc)|VCE(sat)|−|−|0.4|Vdc|
|DC Current Gain (Note 2)<br>(VCE= 6.0 Vdc, IC= 1.0 mAdc)|hFE|120|−|560|−|
|Transition Frequency (VCE= 12 Vdc, IC= 2.0 mAdc, f = 30 MHz)|fT|−|180|−|MHz|
|Output Capacitance (VCB= 12 Vdc, IC= 0 Adc, f = 1  MHz)|COB|−|2.0|−|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 � s, D.C. ≤ 2%. 

**http://onsemi.com** 

**2** 

**2SC4617G, S2SC4617G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**==> picture [485 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 1000<br>TA = 25°C 160 �A T A  = 25°C VCE = 10 V<br>50 140 �A T A  = 75°C<br>40 120 �A<br>TA = -25°C<br>100 �A<br>30 100<br>80 �A<br>20 60 �A<br>40 �A<br>10 IB = 20 �A<br>0 10<br>0 2 4 6 8 0.1 1 10 100<br>VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Figure 1. IC − VCE Figure 2. DC Current Gain<br>2 900<br>TA = 25°C<br>800<br>1.5 700<br>600<br>IC = 200 mA<br>500<br>1<br>100 mA 400<br>TA = 25°C<br>50 mA 300 VCE = 5 V<br>0.5<br>200<br>20 mA<br>10 mA 100<br>00.01 0.1 1 10 100 00.2 0.5 1 5 10 20 40 60 80 100 150 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region<br>Figure 4. On Voltage<br>20 7<br>6<br>18<br>5<br>16<br>4<br>14<br>3<br>12<br>2<br>10 1<br>0 1 2 3 4 0 10 20 30 40<br>VEB (V) VCB (V)<br>DC CURRENT GAIN<br>IC, COLLECTOR CURRENT (mA)<br>COLLECTOR VOLTAGE (mV)<br>VCE, COLLECTOR‐EMITTER VOLTAGE (V)<br>Cob, CAPACITANCE (pF)<br>Cib, INPUT CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance** 

**Figure 6. Capacitance** 

**http://onsemi.com** 

**3** 

**2SC4617G, S2SC4617G** 

## **PACKAGE DIMENSIONS** 

**SC−75/SOT−416** CASE 463 ISSUE F 

**==> picture [423 x 319] intentionally omitted <==**

**----- Start of picture text -----**<br>
−E− NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>TT 2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3 e −D− DIM MIN NOM MAX MIN NOM MAX<br>A 0.70 0.80 0.90 0.027 0.031 0.035<br>1 A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010<br>im, HE 0.20 (0.008) E DE 1.550.70 1.600.80 1.650.90 0.0590.027 0.0630.031 0.0670.035<br>e 1.00 BSC 0.04 BSC<br>L 0.10 0.15 0.20 0.004 0.006 0.008<br>n n ======= HE 1.50 1.60 1.70 0.061 0.063 0.065<br>C A STYLE 1:PIN 1. BASE<br> 2. EMITTER<br> 3. COLLECTOR<br>hay L A1<br>SOLDERING FOOTPRINT*<br>0.356<br>0.014<br>“A<br>1.803 0.787<br>0.071 0.031<br>—|| mi __<br>0.508 a<br>0.020 1.000<br>a 0.039<br>SCALE 10:1 mm<br>(-) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**http://onsemi.com** 

**2SC4617/D** 

**4** 



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