# Standard Recovery Diode, 600 V, 1 A, Single, 1.1 V, 780 ns, 20 A

![Product image](https://novapart.co/image/farnell:3772997RL/)

**URL**: https://novapart.co/products/S1JMH/standard-recovery-diode-600-v-1-a-single-11-780-ns
**SKU**: S1JMH
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €0.0710
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 2Pins |
| Product Range | S1 Series |
| Qualification | AEC-Q101 |
| Diode Case Style | MicroSMA |
| Diode Configuration | Single |
| Forward Voltage Max | 1.1V |
| Forward Surge Current | 20A |
| Reverse Recovery Time | 780ns |
| Average Forward Current | 1A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3772997RL/)

% SEMICONDUCTOR **S1GMH – S1JMH** 

Taiwan Semiconductor 

## **1A, 400V - 600V Standard Surface Mount Rectifier** 

## FEATURES 

- AEC-Q101 qualified 

- Ideal for automated placement 

- Low forward voltage drop 

- Glass passivated chip junction 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Automotive application 

- Car lighting 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|1|A|
|VRRM|400 - 600|V|
|IFSM|20|A|
|TJ MAX|175|°C|
|Package|Micro SMA||
|Configuration|Single die||



## Pd) ROHS HALOGEN — compuant FREE 

- Snubber 

- General purpose 

## MECHANICAL DATA 

- Case: Micro SMA 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

## **Micro SMA** 

- Weight: 0.006g (approximately) 

## Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER|SYMBOL|S1GMH|S1JMH|UNIT|
|Marking code on the device||A5|A7||
|Repetitive peak reverse voltage|VRRM|400|600|V|
|Reverse voltage, total rms value|VR(RMS)|280|420|V|
|Forward current|IF|1||A|
|Surge peak forward current 8.3ms single half sine<br>wave superimposed on ratedload|Surge peak forward current 8.3ms single half sine<br>IFSM|20||A|
|Junction temperature|TJ|-55 to +175||°C|
|Storage temperature|TSTG|-55 to +175||°C|



1 Version: A2103 

## **S1GMH – S1JMH** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|30|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|110|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage(1)|IF= 1A, TJ= 25°C|VF|-|1.10|V|
|Reverse current @ rated VR<br>(2)|TJ= 25°C|IR|-|1|µA|
||TJ= 125°C||-|50|µA|
|Junction capacitance|1MHz, VR= 4.0V|CJ|5|-|pF|
|Reverse recovery time|IF= 0.5A, IR= 1.0A<br>Irr=0.25A|trr|780|-|ns|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)|PACKAGE|PACKING|
|---|---|---|
|S1xMH|Micro SMA|12,000 / Tape & Reel|



## **Notes:** 

1. “x” defines voltage from 400V(S1GMH) to 600V(S1JMH) 

2 Version: A2103 

**S1GMH – S1JMH** 

Taiwan Semiconductor 

**==> picture [120 x 22] intentionally omitted <==**

**----- Start of picture text -----**<br>
c GMWVDDWORR<br>**----- End of picture text -----**<br>


## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [221 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
2<br>1<br>0<br>25 50 75 100 125 150 175<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.3 Typical Reverse Characteristics** 

**==> picture [224 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>TJ=125 ° C<br>1 ————<br>0.1 S S TJ=75 ° C S<br>ee<br>°<br>0.01 ee TJ=25 C<br>o ao<br>0.001 ———<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>**----- End of picture text -----**<br>


**==> picture [225 x 404] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ae<br>a<br>Pe NET<br>Pot LTT PSSAUETT PT<br>Ts<br>PUI LUN<br>PL TAIN LAIN EP<br>f=1.0MHz<br>Vsig=50mVp-p<br>1 c r<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>    Fig.4 Typical Forward Characteristics<br>10<br>-— TJ=125 ° C ——<br>1 f f<br>TJ=25 ° C<br>— ff<br>— ff<br>a7<br>an i Pulse width 300μs<br>1% duty cycle<br>0.1 Tf/<br>0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.5 Maximum Non-Repetitive Forward Surge Current** 

**==> picture [349 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>8.3ms single half sine wave<br>20<br>10 a ll<br>0<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: A2103 

**S1GMH – S1JMH** TAIWANSEMICONDUCTOR[pg Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: A2103 

**S1GMH – S1JMH** 

## GMI QVDDOOT AR ST] SAAN puctoR! 

## Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**Micro SMA** 

## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

P/N = Marking Code YW = Data Code 

5 Version: A2103 

**S1GMH – S1JMH** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: A2103 



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- [Supplier page](https://es.farnell.com/taiwan-semiconductor/s1jmhrsg/rectifier-600v-1a-microsma/dp/3772997RL)
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