# Power MOSFET, P Channel, 12 V, 3 A, 0.042 ohm, SOT-563T, Surface Mount
**URL**: https://novapart.co/products/RW1A030APT2CR/power-mosfet-p-channel-12-v-3-a-0042-ohm-sot-563t
**SKU**: RW1A030APT2CR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1160
**Stock**: 10+
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V;
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-563T |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.042ohm |
| Gate Source Threshold Voltage Max | 1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2706696RL/)
Datasheet
Pch -12V -3A Small Signal MOSFET
## RW1A030AP
## **l Outline**
|VDSS
Not Recommended for|-12V
Not Recommended for|
|---|---|
|RDS(on)(Max.)
Not Recommended for|42mΩ
Not Recommended for|
|ID
Not Recommended for|±3A
Not Recommended for|
|PD
Not Recommended for|0.7W
Not Recommended for|
|VDSS
-12V
SOT-563T
RDS(on)(Max.)
42mΩ
WEMT6
ID
±3A
PD
0.7W
**lInner circuit**
**lFeatures**
1) Low on - resistance.
2) Small high power package
3) Low voltage drive(1.5V)
**lPackaging specifications**
Type
Packing
Embossed
Tape
Reel size(mm)
180
**lApplication**
Tape width(mm)
8
Switching
Basic orderingunit(pcs)
8000
Tapingcode
T2CR
Marking
SB
**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-12
V
Continuous drain current
ID
±3
A
Pulsed drain current
IDP*1
±12
A
Gate - Source voltage
VGSS
0～-8
V
Power dissipation
PD*2
0.7
W
PD*3
0.4
W
Not Recommended for
New Designs
(6)
(5)
SP
12)
(3)
(1) Drain
(6)
(5)
= (4)
(2) Drain
(3) Gate
9
(4) Source
(5) Drain
"
(6) Drain
*1 ESD Protection Diode
*2 Body Diode
(1)
(2)
~~ (3)|VDSS
-12V
SOT-563T
RDS(on)(Max.)
42mΩ
WEMT6
ID
±3A
PD
0.7W
**lInner circuit**
**lFeatures**
1) Low on - resistance.
2) Small high power package
3) Low voltage drive(1.5V)
**lPackaging specifications**
Type
Packing
Embossed
Tape
Reel size(mm)
180
**lApplication**
Tape width(mm)
8
Switching
Basic orderingunit(pcs)
8000
Tapingcode
T2CR
Marking
SB
**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-12
V
Continuous drain current
ID
±3
A
Pulsed drain current
IDP*1
±12
A
Gate - Source voltage
VGSS
0～-8
V
Power dissipation
PD*2
0.7
W
PD*3
0.4
W
Not Recommended for
New Designs
(6)
(5)
SP
12)
(3)
(1) Drain
(6)
(5)
= (4)
(2) Drain
(3) Gate
9
(4) Source
(5) Drain
"
(6) Drain
*1 ESD Protection Diode
*2 Body Diode
(1)
(2)
~~ (3)|VDSS
-12V
SOT-563T
RDS(on)(Max.)
42mΩ
WEMT6
ID
±3A
PD
0.7W
**lInner circuit**
**lFeatures**
1) Low on - resistance.
2) Small high power package
3) Low voltage drive(1.5V)
**lPackaging specifications**
Type
Packing
Embossed
Tape
Reel size(mm)
180
**lApplication**
Tape width(mm)
8
Switching
Basic orderingunit(pcs)
8000
Tapingcode
T2CR
Marking
SB
**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-12
V
Continuous drain current
ID
±3
A
Pulsed drain current
IDP*1
±12
A
Gate - Source voltage
VGSS
0～-8
V
Power dissipation
PD*2
0.7
W
PD*3
0.4
W
Not Recommended for
New Designs
(6)
(5)
SP
12)
(3)
(1) Drain
(6)
(5)
= (4)
(2) Drain
(3) Gate
9
(4) Source
(5) Drain
"
(6) Drain
*1 ESD Protection Diode
*2 Body Diode
(1)
(2)
~~ (3)|
|---|---|---|
|Junction temperature
Tj
150||℃|
|Operating junction and storage temperature range
Tstg
-55 to +150||℃|
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
> 1/11 **20160808 - Rev.001**
**RW1A030AP**
Datasheet
## **l Thermal resistance**
|Parameter
Not Recommended for|Symbol
Not Recommended for|Conditions
Not Recommended for|Values
Not Recommended for|Values
Not Recommended for|Values
Not Recommended for|Unit
Not Recommended for|
|---|---|---|---|---|---|---|
||||Min.
Not Recommended for|Typ.
Not Recommended for|Max.
Not Recommended for||
|Drain - Source breakdown
voltage
Not Recommended for|V(BR)DSS
Not Recommended for|VGS= 0V, ID= -1mA
Not Recommended for|-12
Not Recommended for|-
Not Recommended for|-
Not Recommended for|V
Not Recommended for|
|Breakdown voltage
temperature coefficient
Not Recommended for
New Designs|ΔV(BR)DSS
ΔTj
Not Recommended for
New Designs|ID= -1mA
referenced to 25℃
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-5.0
Not Recommended for
New Designs|-
Not Recommended for
New Designs|mV/℃
Not Recommended for|
|Zero gate voltage
drain current
Not Recommended for
New Designs|IDSS
Not Recommended for
New Designs|VDS= -12V, VGS= 0V
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-10
Not Recommended for
New Designs|μA
Not Recommended for|
|Gate - Source leakage current
Not Recommended for
New Designs|IGSS
Not Recommended for
New Designs|VGS= -8V, VDS= 0V
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-10
Not Recommended for
New Designs|μA
Not Recommended for|
|Gate threshold voltage
Not Recommended for
New Designs|VGS(th)
Not Recommended for
New Designs|VDS= -6V, ID= -1mA
Not Recommended for
New Designs|-0.3
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-1.0
Not Recommended for
New Designs|V
Not Recommended for|
|Gate threshold voltage
temperature coefficient
Not Recommended for
New Designs|ΔVGS(th)
ΔTj
Not Recommended for
New Designs|ID= -1mA
referenced to 25℃
Not Recommended for
New Designs|-
Not Recommended for
New Designs|2.7
Not Recommended for
New Designs|-
Not Recommended for
New Designs|mV/℃
Not Recommended for|
|Static drain - source
on - state resistance
Not Recommended for
New Designs|RDS(on)*4
Not Recommended for
New Designs|VGS= -4.5V, ID= -3A
Not Recommended for
New Designs|-
Not Recommended for
New Designs|30
Not Recommended for
New Designs|42
Not Recommended for
New Designs|mΩ
Not Recommended for|
|||VGS= -2.5V, ID= -1.5A
Not Recommended for
New Designs|-
Not Recommended for
New Designs|40
Not Recommended for
New Designs|56
Not Recommended for
New Designs||
|||VGS= -1.8V, ID= -1.5A
Not Recommended for
New Designs|-
Not Recommended for
New Designs|55
Not Recommended for
New Designs|82
Not Recommended for
New Designs||
|||VGS= -1.5V, ID= -0.6A
Not Recommended for
New Designs|-
Not Recommended for
New Designs|75
Not Recommended for
New Designs|150
Not Recommended for
New Designs||
|Gate resistance
Not Recommended for
New Designs|RG
Not Recommended for
New Designs|f = 1MHz, open drain
Not Recommended for
New Designs|-
Not Recommended for
New Designs|18
Not Recommended for
New Designs|-
Not Recommended for
New Designs|Ω
Not Recommended for|
|Forward Transfer
Admittance
Not Recommended for
New Designs||Yfs|*4
Not Recommended for
New Designs|VDS= -6V, ID= -3A
Not Recommended for
New Designs|3.8
Not Recommended for
New Designs|-
Not Recommended for
New Designs|-
Not Recommended for
New Designs|S
Not Recommended for|
*3 Mounted on a FR4 (12×20×0.8mm,Cu pad:240mm[2] )
*4 Pulsed
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
2/11
**RW1A030AP**
Datasheet
## **l Electrical characteristics** (Ta = 25°C)
|Values|||
|---|---|---|
|Parameter
Symbol
Conditions||Unit|
|Min.
Typ.|Max.||
|Input capacitance
Ciss
VGS= 0V
-
2700
-
pF
Output capacitance
Coss
VDS= -6V
-
170
-
Reverse transfer capacitance
Crss
f = 1MHz
-
150
-
Turn - on delay time
td(on)*4
VDD ⋍-6V,VGS= -4.5V
-
10
-
ns
Rise time
tr*4
ID= -1.5A
-
30
-
Turn - off delay time
td(off)*4
RL ⋍4Ω
-
240
-
Fall time
tf*4
RG= 10Ω
-
75
-
**lGate charge characteristics**(Ta= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Total gate charge
Qg*4
VDD ⋍-6V,
ID= -3A,
VGS= -4.5V
-
22
-
nC
Gate - Source charge
Qgs*4
-
3.9
-
Gate - Drain charge
Qgd*4
-
3.1
-
**lBody diode electrical characteristics** (Source-Drain) (Ta= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Continuous forward current
IS
Ta= 25℃
-
-
-0.5
A
Pulse forward current
ISP*1
-
-
-12
A
Not Recommended for
New Designs|||
|Forward voltage
VSD*4
VGS= 0V, IS= -3A
-
-|-1.2|V|
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
3/11
**RW1A030AP**
**==> picture [526 x 757] intentionally omitted <==**
**----- Start of picture text -----**
RW1A030AP Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
120 100 FEE
= Operation in this area =—5
_ 400 is limited by Rps(on)(Ves =-4.5V) nae
= < 10 SS
aSo 80 “0 memesesi eras eres ee Sed Gee eres
oO.c |\ +L 2NNT SSSUT Pa)
£ 60 63 1 |—— NN | ENN
@ 40 BC= Operaton. “SEFSATII tome
0 oot eeTTT ELT
0 50 100 150 200 0.1 1 10
Junction Temperature : T; [°C] Drain - Source Voltage : -Vps [V]
Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power
Resistance vs. Pulse Width dissipation
S OO — 1000 —— ee
8 oo ini Fi , [Ht]
= a a | = NM IlTT single Pulse (iita _—a
, SO ee SE
tie on | | NE
=Eo, EZATIM —uuit. 9,ee Soe HfTee || | Sc |
g$ (7TH Mounteden ceramicboard tt—— —
5 [oo] CooteLl nr!conn Omni of ELIMIa|TIME IM
0.0001 0.01 1 100 0.0001 0.01 1 100
Pulse Width : Pw [s] Pulse Width : Pw [s]
www.rohm.com
4/11 20160808 - Rev.001
© 2016 ROHM Co., Ltd. All rights reserved.
New Designs
Not Recommended for
**----- End of picture text -----**
**RW1A030AP**
**==> picture [526 x 753] intentionally omitted <==**
**----- Start of picture text -----**
RW1A030AP Datasheet
l Electrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
10 10 ae a
xX
TT T Voes= -1.5V
(a) (a) Ps
= Ves= -1.5V =
=) =)
S) 4 S) ‘ | ay [|_| ——,
r= r=
g T,=25°C g Pulsed
7 Ly °
2 4 2
(ee YU Tt dTCT ; [ope
0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10
Drain - Source Voltage : -Vps [V] Drain - Source Voltage : -Vps [V]
Fig.7 Breakdown Voltage vs. Fig.8 Typical Transfer Characteristics
Junction Temperature
2 40 — eee
B Vps= OV EE _____—————
a bia tinA FPused | [-—-———
2 Pulse4 u——J rd CUCU
7 4g (LE | ee ee
o = a A |oanzr_eée«s]"™—]
& Tv _— —
re) L —EE———————
z 20 — © 0.1 | RR T,=125°C |
= EE —— = ; ——————— es T,=75°C =
O(e) 6 are eeseee AeAe Aee eeee rT: =25°Ca —_
x c es
3 S pSeS 2
5 tg Bont fff
® —————eT
3 |
D ee ee 2 0 ee
tg oor PP
fe -50 0 50 100 150 ° 0.8 ' 8 2
a) .
Junction Temperature : T; [°C] Gate - Source Voltage : -Ves [V]
www.rohm.com
5/11 20160808 - Rev.001
New Designs
Not Recommended for
**----- End of picture text -----**
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
**RW1A030AP**
**==> picture [526 x 762] intentionally omitted <==**
**----- Start of picture text -----**
RW1A030AP Datasheet
l Electrical characteristic curves
Fig.9 Gate Threshold Voltage vs. Fig.10 Forward Transfer Admittance vs.
Junction Temperature Drain Current
*T—_; s (SL
S Vps=-6V a4 WVos= -6V FOBoo
S. aa
S ietiriA a pa eH
Pulsed = = Bo
S15 | et
; — 9 JE
ee a
s E yy’ T.=125°C
$s 1 < 1 | | LYNN T3=75°C — HHH
° 7 YN 1.
2 | 5 ER Arex St
raj = -25°e SCT
=o 08 Rice| a©c P/OMf+tTTal|anilHHH
2 s WY | mail
5 = Y
LL
0 0.1
-50 (@) 50 100 150 0.01 0.1 1 10
Junction Temperature : T; [°C] Drain Current: -Ip [A]
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
_, 120 @ 150
eet EL
% 100 5 Pulsed
E \ ra
rs 80 ~ a Gq 100 =
3 60 \ O€ al
n oO 9a
Q [o) oe
5 o "T
oO 20 ra} —s
= \ aS)
© ©
Oo 0 7) 0
25 O 25 50 75 100 125 150 ) 2 4 6 8 10
Junction Temperature : T; [°C] Gate - Source Voltage : -Ves [V]
www.rohm.com
6/11 20160808 - Rev.001
© 2016 ROHM Co., Ltd. All rights reserved.
New Designs
Not Recommended for
**----- End of picture text -----**
**RW1A030AP**
Datasheet
## **l Electrical characteristic curves**
**==> picture [514 x 518] intentionally omitted <==**
**----- Start of picture text -----**
Fig.13 Static Drain - Source On - State Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature Resistance vs. Drain Current(I)
2 7 2 AT aero Fo
a
S — 5 Flas FE-PE EH
BA —
we Z| @ pO
aa WA oc PT TT TTT
5S Qo L 1tess LUI
Se Z| 'o=30A bE CAEN -oev
° Se |LS |III]
o & (0) s 100 pe
8 9 8 —azee
3% 20 30 se A
D ” PTT
c c PATT
g 10 _ §O a |
aS) Ves=-4.5V o
w Pulsed ®
7) 0 —— a) 10
50 -25 0 25 50 75 100 125 150 0.1 1 10
Junction Temperature : T; [°C] Drain Current : -Ip [A]
New Designs
Not Recommended for
**----- End of picture text -----**
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
7/11
**RW1A030AP**
**==> picture [526 x 622] intentionally omitted <==**
**----- Start of picture text -----**
RW1A030AP Datasheet
l Electrical characteristic curves
Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(II) Resistance vs. Drain Current(III)
oO (3) —
17 ee 7) | [Pulsed BE ee eeee
g YT CT ETT TT % a
rd ee ile Pt erase LI
nS°g_—ofe—§ 100 eepeeen 2Z LZ. allTa=75°CT.=25°C ||) nC°le_—iiaZe§ 100 Asalpt | eeJattiA T,=25°Clp
SB ee a0 24) ee 8 2 et
Say5 ee ee 47Z| 2/| Sa a ey 4p4 40 a
0 = aa 5 = PTria
c Pr TTT c pT
>
o— rr ‘o— r |ffi
g eeoe eel
2 a)
(op) 10 ep) 10
0.1 1 10 0.1 1 10
D rain Cc Current t : -l-I p D[A D rain Cc Current t:-Ip: -Ip [A
Fig.17 Static Drain - Source On - State Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(IV) Resistance vs. Drain Current (V)
a2)£8 ea| eeRRR rree ee a2)8 ClVos®|_|Pulsed -1-5V rr1 ee eeee
2 PT TTT Hl % [TTT [TEE
ac a ee Teetast0 || « tL fe terse | | ||IT
=¢ eZ wepe {|B; es reeYsats TTT
7p)ge© & 100|pf|eer)a CH4 OtT.= -25°C 7)beo § 100 Leteesst tt}T,= -25°Cttt
8 x 7 A 8 x ———ee rrr
o 8g a 4 og —_———_
. See ee
” a aro ” oe a ee
cg PT [TTT] TT eg || | TP
New Designs
Not Recommended for
**----- End of picture text -----**
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
8/11
**RW1A030AP**
**==> picture [526 x 758] intentionally omitted <==**
**----- Start of picture text -----**
RW1A030AP Datasheet
l Electrical characteristic curves
Fig.19 Typical Capacitance vs. Fig.20 Switching Characteristics
Drain - Source Voltage
10000 Ss es 8 ee ee 1000 a ee LS AS
poo yy PT ey TT TTT Vpp= -6V |
pTTy Hert rH |
A NN Nose ~a.5v |
Son PL Zr ft _— SRA TTT R002 |
Qa (AIM Tee LUM TIM ae LINN VTE Teese
~ Pf ft o eee Oe cat Ran SA GGEGRR Sd GL UG
A8 esseti CA
S = a
zy Pt AIS Ut > Ca mma!
[av]$e LlMlesA TimSanat UT =5
Ss) Sea eaiiiemetieeeaeda a= aest ee;= esa 2eee Cae eee
SHEPLM hear SSHH EH EH
vo CLAIMEEEUM UTTP natecs=reI » |LLM CT LTTilTE
0.01 0.1 1 10 100 0.01 0.1 1 10 100
Drain - Source Voltage : -Vps [V] Drain Current : -Ip [A]
Fig.21 Dynamic Input Characteristics Fig.22 Source Current vs.
Source Drain Voltage
6 0 eS
Pulsed = a ae ee ee ee ee ed ed de
> / Feseoy FP
8 4 / _< FaPTTTT TT YAA TTFH [tT] 4
z / SELLE AE
C0) L i oe cee cerees © (eeee
fe) / | Cc dS
© 8 © ——— oe aos
=~ oc= 22\
Ss 3 See 2) eS eae
=)5A y >—LLLTHINS Tensie |_|
8 _/ 3 0.1 tt Le INS pee Se
); 4 / VienT,=25°C D |===!a a =. =
© A
Oo oeaieace pP t |TTAft Fag TTty tTty tytT Tt tt
oon LL LATTEL ELT
0 5 10 15 20 25 30 0 0.5 1 1.5
Total Gate Charge : Q, [nC] Source - Drain Voltage : -Vsp [V]
www.rohm.com
9/11 20160808 - Rev.001
New Designs
Not Recommended for
**----- End of picture text -----**
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
**RW1A030AP**
Datasheet
## **l Measurement circuits**
**==> picture [501 x 547] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS
Ves |p ——> Pulse width
Vos
R, Ves 50%1 10% 90% J °°%;
D.U.T.
RS Vop Vos /| 90% 90%
tavon rl] | t, tao t
Ll a
ton torr
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM
Ves |p ——> Vo
Vos
Ri Qe
le(const) <— D.U.T. Ves [|
| Vop y,—_ Charge
l Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
New Designs
Not Recommended for
**----- End of picture text -----**
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
**20160808 - Rev.001**
10/11
**==> picture [526 x 759] intentionally omitted <==**
**----- Start of picture text -----**
RW1A030AP Datasheet
l Dimensions
SOT-563T D ‘A| c
x@
( WEMT6 ) +> Sho
Be ee 2 ee S$
Be ee ee ee
_ 8
—! ln ; °.
z |
~ HH
b2 e]
Pattern of terminal position areas
[Not a pattern of soldering pads]
| MILIMETERS INCHES
| MIN, | MAX { MIN’ | MAX
|| obAiA CT | )=~oss7? Ss|| | S05275 S||| 0 0.007. 0 22S ||S 0 0.026.0112
0.003 0.007
| oD |) so | 70 | 0.059 || 0.067
|esEF | [to]] ee S40 | 0.047 0.020 0.055
0.059 0.067
| tp |) ~—ott | ts] 0.004 0.012
ae esS| 9
| oy | - { oo | - | 0.004
| MILIMETERS INCHES
a MIN, {| MAX | MIN, | MAX _—s
Poet | ee2Sy eeHT9
Dimension in mm/inches
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11/11 20160808 - Rev.001
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New Designs
Not Recommended for
**----- End of picture text -----**
## **Notice**
## **Precaution on using ROHM Products**
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment[(Note 1)] , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASS `Ⅲ` CLASS `Ⅱ` b CLASS `Ⅲ` CLASS `Ⅲ` CLASS `Ⅳ` CLASS `Ⅲ` 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document.
## **Precaution for Mounting / Circuit board design**
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.003**
## **Precautions Regarding Application Examples and External Circuits**
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.
- **Precaution for Electrostatic** This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
- **Precaution for Storage / Transportation** 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic
- 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
- 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton.
- 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period.
- **Precaution for Product Label** A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
- **Precaution for Disposition** When disposing Products please dispose them properly using an authorized industry waste company.
- **Precaution for Foreign Exchange and Foreign Trade act** Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export.
- **Precaution Regarding Intellectual Property Rights** 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data.
- 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software).
- 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein.
- **Other Precaution** 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties.
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.003**
## Links
- [View this product on Novapart](https://novapart.co/products/RW1A030APT2CR/power-mosfet-p-channel-12-v-3-a-0042-ohm-sot-563t)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/rohm/rw1a030apt2cr/mosfet-p-ch-12v-3a-sot-563t/dp/2706696RL)
---
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