# Standard Recovery Diode, 1 kV, 8 A, Single, 1.8 V, 100 ns, 100 A

![Product image](https://novapart.co/image/farnell:2454090/)

**URL**: https://novapart.co/products/RURP8100/standard-recovery-diode-1-kv-8-a-single-18-v-100
**SKU**: RURP8100
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €0.4110
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Product Range | RURP8 |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 1.8V |
| Forward Surge Current | 100A |
| Reverse Recovery Time | 100ns |
| Average Forward Current | 8A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454090/)

_**MUR8100E, RURP8100**_ 

## _**Data Sheet**_ 

## _**November 2013**_ 

## _**8 A, 1000 V Ultrafast Diodes**_ 

## _**Features**_ 

- Ultrafast Recovery trr = 100 ns (@ IF = 8 A) 

The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application. 

- Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) 

- 1000 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- RoHS Compliant 

## _**Applications**_ 

- Switching Power Supply 

- Power Switching Circuits 

- General Purpose 

## _**Ordering Information**_ 

**==> picture [211 x 39] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|PART NUMBER|PACKAGE|BRAND|
|MUR8100E|TO-220AC|MU8100|
|RURP8100|TO-220AC|RURP8100|

**----- End of picture text -----**<br>


NOTE: When ordering, use entire part number. 

## _**Symbol**_ 

**K A** 

## _**Packaging**_ 

## **JEDEC TO-220AC** 

**==> picture [156 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
ANODE<br>CATHODE<br>CATHODE<br>(FLANGE)<br>L, 2<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified 

**==> picture [492 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|MUR8100E|
|RURP8100|UNIT|
|Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM|1000|V|
|Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM|1000|V|
|DC Blocking Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR|1000|V|
|Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)|8|A|
|(TC = 155|[o]|C)|
|Repetitive Peak Surge Current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM|16|A|
|(Square Wave 20kHz)|
|Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM|100|A|
|(Halfwave 1 Phase 60Hz)|
|Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD|75|W|
|Avalanche Energy (See Figures 10 and 11)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL|20|mJ|
|Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ|-55 to 175|oC|

**----- End of picture text -----**<br>


www.fairchildsemi.com 

**1** 

©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. C1 

_**MUR8100E, RURP8100**_ 

**==> picture [518 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
Electrical Specifications TC = 25 [o] C, Unless Otherwise Specified.<br>SYMBOL TEST CONDITION MIN TYP MAX UNIT<br>ee<br>VF IF = 8 A - - 1.8 V<br>———————————ee IF = 8 A, TC = 150 [o] C ee - es - es 1.5 V<br>IR VR = 1000 V - - 100 µA<br>eeee VR = 1000 V, TC = 150 [o] C ee - ee - 500 es µA<br>trr IF = 1 A - - 85 ns<br>IF = 8 A, dIF/dt = 200 A/µs - - 100 ns<br>eeeeee ee es<br>ta IF = 8 A, dIF/dt = 200 A/µs - 50 - ns<br>nn<br>tb IF = 8 A, dIF/dt = 200 A/µs - 30 - ns<br>ee (es<br>QRR IF = 8 A, dIF/dt = 200 A/µs - 500 - nC<br>i re (res<br>CJ VR = 10 V, IF = 0 A - 30 - pF<br>ll O—FE— EE reOO eeelUCULU CC<br>RθJC - - 2.0 oC/W<br>ee re (er<br>**----- End of picture text -----**<br>


- DEFINITIONS 

- VF = Instantaneous forward voltage (pw = 300 µs, D = 2%). 

- IR = Instantaneous reverse current. 

- Trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb. 

- ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9). 

- tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). 

- QRR = Reverse recovery charge. 

- CJ = Junction Capacitance. 

- RθJC = Thermal resistance junction to case. pw = Pulse width. 

- D = Duty cycle. 

## _**Typical Performance Curves**_ 

**==> picture [506 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 200<br>175 [o] C<br>a a a eeee<br>a SS<br>175 [o] C 10<br>10<br>100 [o] C<br>1<br>fff 0.1 SS SSS<br>100 [o] C 25 [o] C<br>0.01 25 [o] C<br>1<br>0.5 0.001<br>0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>µ<br>, FORWARD CURRENT (A) , REVERSE CURRENT (<br>IF IR<br>**----- End of picture text -----**<br>


**FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE** 

**FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE** 

www.fairchildsemi.com 

**2** 

©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. C1 

_**MUR8100E, RURP8100**_ 

## _**Typical Performance Curves**_ **(Continued)** 

**==> picture [506 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 125<br>TC = 25 [o] C, dIF/dt = 200A/ µ s TC = 100 [o] C, dIF/dt = 200A/ µ s<br>80 Cll ee 100 nt<br>60 75<br>LE | erty i= trr til<br>trr<br>40 50<br>ee ta oe ta Tee<br>20 25<br>on tb ne tb<br>0 rrr CL ELLE 0 TTL ELLE<br>0.5 1 4 8 0.5 1 4 8<br>IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


**FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT** 

**FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT** 

**==> picture [507 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 8<br>TC = 175 [o] C, dIF/dt = 200A/ µ s<br>125 anne S DC<br>6<br>100 coer trr SC FEOSA SQ. WAVE<br>75 4 EaeaNGe<br>eT HF<br>ta<br>50<br>PPT eee 2 SaaaNe<br>25 Bas: a tb \<br>0<br>0 TELL PTT LTLELIN<br>0.5 1 4 8 140 145 150 155 160 165 170 175<br>IF, FORWARD CURRENT (A) TC, CASE TEMPERATURE ( [o] C)<br>FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE<br>100<br>80 | |<br>60 P| ff<br>40 a|<br>20<br>Ne<br>ts<br>0<br>0 50 100 150 200<br>VR, REVERSE VOLTAGE (V)<br>t, RECOVERY TIMES (ns)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>, JUNCTION CAPACITANCE (pF)<br>J<br>C<br>**----- End of picture text -----**<br>


**FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE** 

www.fairchildsemi.com 

**3** 

©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. C1 

_**MUR8100E, RURP8100**_ 

## _**Test Circuits and Waveforms**_ 

**==> picture [237 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 CONTROL IF<br>DUT CURRENT<br>RG SENSE<br>+<br>VGE JUL t1 ES IGBT - VDD<br>>! t2 x<br>**----- End of picture text -----**<br>


**FIGURE 8. trr TEST CIRCUIT** 

**==> picture [214 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
I = 1A<br>L = 40mH<br>R < 0.1 Ω<br>EAVL = 1/2LI [2]  [VR(AVL) /(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>JL — N Y DUT -<br>**----- End of picture text -----**<br>


**FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT** 

**==> picture [209 x 223] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF dIdtF ta trr tb<br>0<br>a<br>l y 0.25 IIRM RM<br>FIGURE 9. trr WAVEFORMS AND DEFINITIONS<br>VAVL<br>tt IL va , y \ \ IL<br>I V a *<br>aa maa . \<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS** 

www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. C1 

**4** 

## **Mechanical Dimensions** 

## **Figure 12.  TO-220 2L - TO-220, MOLDED, 2LD** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002._ 

©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. C1 

www.fairchildsemi.com 

**5** 

## **TRADEMARKS** 

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 

A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. C1 

www.fairchildsemi.com 

**6** 



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