# Fast / Ultrafast Diode, 600 V, 30 A, Single, 1.5 V, 80 ns, 90 A

![Product image](https://novapart.co/image/farnell:3606224/)

**URL**: https://novapart.co/products/RURG3060-F085/fast-ultrafast-diode-600-v-30-a-single-15-80-ns-90
**SKU**: RURG3060-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €2.1100
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Forward Voltage Max | 1.5V |
| Forward Surge Current | 90A |
| Reverse Recovery Time | 80ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606224/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ 

## Ultrafast Rectifier 

## **30 A, 600 V** 

## RURG3060-F085 

## **Description** 

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1<br>2 1. Cathode<br>2. Anode<br>**----- End of picture text -----**<br>


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TO−247−2LD<br>CASE 340CL<br>**----- End of picture text -----**<br>


The RURG3060−F085 is an ultrafast diode with soft recovery characteristics (trr< 80 ns). It has low forward voltage drop and is silicon nitride passivated ion−implanted epitaxial planar construction. 

This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. 

## **Features** 

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1 2<br>1. Cathode 2. Anode<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

- High Speed Switching (trr = 60 ns(Typ.) @ IF = 30 A) 

- Low Forward Voltage (VF = 1.5 V(Max.) @ IF = 30 A) 

- Avalanche Energy Rated 

- AEC−Q101 Qualified and PPAP Capable 

- This Device is Pb−Free 

## **Applications** 

- Automotive DC/DC Converter 

- Automotive On Board Charger 

- Switching Power Supply 

- Power Switching Circuits 

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$Y&Z&3&K<br>RURG3060<br>L |<br>$Y =  onsemi  Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>RURG3060 = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **RURG3060−F085/D** 

**1** 

 Semiconductor Components Industries, LLC, 2013 **July, 2024 − Rev. 5** 

**RURG3060−F085** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25C unless otherwise noted) 

|**ABSOLUTE MAXIMUM RATINGS**(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage|VRRM|600|V|
|Working Peak Reverse Voltage|VRWM|600|V|
|DC Blocking Voltage|VR|600|V|
|Average Rectified Forward Current (TC= 25C)|IF(AV)|30|A|
|Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz)|IFSM|90|A|
|Avalanche Energy (1 A, 40 mH)|EAVL|20|mJ|
|Operating Junction and Storage Temperature|TJ,TSTG|−55 to<br>+175|C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

**Device Device Marking Package Tube Quantity** RURG3060−F085 RURG3060 TO−247−2LD − 30 ~~————————~~ 

## **THERMAL CHARACTERISTICS** (TC = 25C unless otherwise noted) 

|**Parameter**<br>~~ee~~|**Symbol**<br>~~a~~|**Test Conditions**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Instantaneous Reverse Current<br>~~ee~~<br>~~ee~~|IR<br>~~a~~|VR= 600 V<br>~~a~~|TC= 25C|−|−|250|A|
||||TC= 175C|−|−|1|mA|
|Instantaneous Forward Voltage<br>(Note 1)<br>~~ee ~~<br>~~ee~~<br>~~po~~|VFM<br> ~~a~~<br>~~|~~|IF= 30 A<br>~~a~~<br>~~p~~|TC= 25C|−|1.26|1.5|V|
||||TC= 175C<br>~~pe~~|−<br>~~e~~|1.06<br>~~e~~|1.3<br>~~e~~|V<br>~~e~~|
|Reverse Recovery Time<br>(Note 2)<br>~~ee~~<br>~~po~~|trr<br>~~|~~<br>~~|~~|IF= 1 A, di/dt =100 A/ s,<br>VCC= 390 V<br>~~p~~|TC= 25C<br>~~pe~~|−<br>~~e~~|35<br>~~e~~|55<br>~~e~~|ns<br>~~e~~|
|||IF= 30 A, di/dt = 100 A/ s,<br>VCC= 390 V<br>~~p~~<br>~~ee~~|TC= 25C<br>~~pe~~|−<br>~~e~~|60<br>~~e~~<br>~~ee~~|80<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|
||||TC= 175C<br>~~pe~~<br>~~ee~~|−<br>~~e~~<br>~~ee~~<br>~~===~~|231<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~===~~|−<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~===~~|ns<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~===~~|
|Reverse Recovery Time<br>Reverse Recovery Charge<br>~~po~~<br>~~=~~|ta<br>~~| ~~<br>~~=~~<br>~~|~~|IF= 30 A, di/dt = 100 A/ s,<br>VCC= 390 V<br> ~~p~~<br>~~=~~<br>~~ee~~|TC= 25C<br>~~pe~~<br>~~=~~|−<br>~~e~~<br>~~=~~<br>~~===~~|31<br>~~e~~<br>~~ee ~~<br>~~=~~<br>~~===~~|−<br>~~e~~<br> ~~ee ~~<br>~~=~~<br>~~===~~|ns<br>~~e~~<br> ~~ee~~<br>~~=~~<br>~~===~~|
||tb<br>~~=~~<br>~~|~~|||−<br>~~=~~<br>~~===~~|29<br>~~=~~<br>~~===~~|−<br>~~=~~<br>~~===~~|ns<br>~~=~~<br>~~===~~|
||Qrr<br>~~=~~<br>~~|~~|||−<br>~~=~~<br>~~===~~<br>~~a ~~|92<br>~~=~~<br>~~===~~<br> ~~a~~|−<br>~~=~~<br>~~===~~|nC<br>~~=~~<br>~~===~~|
|Avalanche Energy<br>~~GG~~|EAVL<br>~~|~~<br>~~GG~~|IAV= 1.0 A, L = 40 mH<br>~~ee~~<br>~~GG~~||20<br>~~===~~<br>~~GG~~|−<br>~~===~~<br>~~GG~~|−<br>~~===~~<br>~~GG~~|mJ<br>~~===~~<br>~~GG~~|



1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% 

2. Guaranteed by design. 

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**RURG3060−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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400 1000<br>100<br>100<br>eo ee<br>10<br>10 ae 1<br>pa | * beeen<br>0.1 peer<br>1 peer) 0.01 SaseenSSen55<br>1E−3<br>0.1 AT 1E−4<br>0.1 0.5 1.0 1.5 2.0 0 SHEE 100 200 oes 300 400 500 600<br>ivan | ere<br>VF, Forward Voltage (V) VR, Reverse Voltage (V)<br>Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current<br>vs. Forward Current vs. Reverse Voltage<br>400 250<br>200<br>300<br>Kee] | NE<br>150<br>200<br>100<br>Site a SESS<br>100 CH) 50 EEE<br>0<br>0.1 1 10 100 100 200 300 400 500<br>EES EEESEE<br>VR, Reverse Voltage (V) di/dt (A/ Ub s)<br>Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time<br>vs. di/dt<br>35 40<br>30<br>SSS Ee<br>30<br>25<br>ae<br>20<br>pee PN<br>20<br>15<br>10<br>10<br>om PEE EEN<br>5<br>0 reea fa 0 LN<br>100 200 300 400 500 25 50 75 100 125 150 175<br>di/dt (A/ uw s) Case Temperature, TC (C)<br> Forward Current (A) A)<br>IF, , Reverse Current (IR<br>, Capacitance (pF)Cj<br>, Reverse Recovery Time (ns)<br>trr<br> Reverse Recovery Current (A)  Average Forward Current (A)<br>IRR,<br>IF(AV),<br>**----- End of picture text -----**<br>


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Figure 4. Typical Reverse Recovery Time<br>vs. di/dt<br>**----- End of picture text -----**<br>


**Figure 5. Typical Reverse Recovery Current** 

**Figure 6. Forward Current Derating Curve** 

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vs. di/dt<br>**----- End of picture text -----**<br>


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**RURG3060−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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2500<br>2000<br>1500<br>pastors<br>1000<br>500<br>0<br>100 200 300 400 500<br>di/dt (A/ u s)<br>, Reverse Recovery Charge (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Recovery Charge** 

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1<br>050.57 rl<br>aa ial alk as a Be 4 a me fa ia i. sas hs = “. ak jaa _ a. aes Pow | 4 ras a at a in!<br>0.1 Z 94 a]yWa i ivan i iii ibid ioiaiiinjt to >| (eee<br>7 me)0.05774. a Sfdf ee)eee caeeea meen = + a ae ai ae a oo 6 os eee ee ia clea eee<br>= i} 4i a i) Portereee oer i) en 1 cee 1tueide| ee ! ee oredreee * Notes: eeot Diet<br>co 0.02%, Vi : Etwal a ae es ttI if Pteiil : i1 Prinordre 1. Znyol) = 0.7 “CIWTYp. (!an ia Pe<br>0.001<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1] 10 [2]<br>t1, Square Wave Pulse Duration (sec)<br>(t), Thermal Response<br>JC<br>Z<br>**----- End of picture text -----**<br>


**Figure 8. Transient Thermal Response Curve** 

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**RURG3060−F085** 

## **TEST CIRCUIT AND WAVEFORMS** 

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VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 Control IF<br>DUT CURRENT<br>RG SENSE<br>+<br>VGE t1 IGBT −VDD<br>n e§ 4<br>t2<br>**----- End of picture text -----**<br>


**Figure 9. trr Test Circuit** 

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I = 1 A<br>L = 40 mH<br>R < 0.1  Q<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) − VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)<br>L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT −<br>**----- End of picture text -----**<br>


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IF dIdtF ta trr tb<br>0<br>0.25 IRM<br>IRM<br>Figure 10. trr Waveforms and Definitions<br>VAVL<br>IL IL<br>I V<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 11. Avalanche Energy Test Circuit** 

**Figure 12. Avalanche Current and Voltage Waveforms** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−247−2LD** CASE 340CL ISSUE A 

DATE 03 DEC 2019 

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GENERIC<br>MARKING DIAGRAM*<br>AYWWZZ XXXX = Specific Device Code<br>XXXXXXX A = Assembly Location<br>XXXXXXX Y = Year<br>WW = Work Week<br>ZZ = Assembly Lot Code<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13850G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−247−2LD PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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