# Fast / Ultrafast Diode, 600 V, 6 A, Single Triple Cathode, 1.5 V, 83 ns, 60 A

![Product image](https://novapart.co/image/farnell:3606219/)

**URL**: https://novapart.co/products/RURD660S9A-F085/fast-ultrafast-diode-600-v-6-a-single-triple
**SKU**: RURD660S9A-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.3830
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Case Style | TO-252 (DPAK) |
| Diode Configuration | Single Triple Cathode |
| Forward Voltage Max | 1.5V |
| Forward Surge Current | 60A |
| Reverse Recovery Time | 83ns |
| Average Forward Current | 6A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606219/)

**DATA SHEET www.onsemi.com** ~~—~~ 

## Ultrafast Power Rectifier 

## 6 A, 600 V 

## RURD660S9A-F085 

The RURD660S9A−F085 is an ultrafast diode with soft recovery characteristics (trr < 83 ns). It has a low forward voltage drop and is of silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing powerloss in the switching transistors. 

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4<br>2<br>1<br>3<br>DPAK3 (TO−252 3 LD)<br>CASE 369AS<br>**----- End of picture text -----**<br>


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1, 2, 4. Cathode 3. Anode<br>**----- End of picture text -----**<br>


## **Features** 

- High Speed Switching (trr = 63 ns (Typ.) @ IF = 6 A) 

## **MARKING DIAGRAM** 

- Low Forward Voltage (VF = 1.26 V (Typ.) @ IF = 6 A) 

- Avalanche Energy Rated 

- AEC−Q101 Qualified and PPAP Capable 

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$Y&Z&3&K<br>RUR660<br>**----- End of picture text -----**<br>


- This is a Pb−Free Device 

## **Applications** 

- General Purpose 

- Switching Mode Power Supply 

- Power Switching Circuits 

RUR660 = Specific Device Code 

- $Y = **onsemi** Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digits Lot Run Traceability Code 

## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**(TC = 25C = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|VRRM|Peak Repetitive Reverse Voltage|600|V|
|VRWM|Working Peak Reverse Voltage|600|V|
|VR|DC Blocking Voltage|600|V|
|IF(AV)|Average Rectified Forward Current<br>@ TC= 25°C|6|A|
|IFSM|Non−repetitive Peak Surge Current|60|A|
|TJ, TSTG|Operating Junction and Storage<br>Temperature|− 55 to +175|°C|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 4 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**THERMAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**Symbol**<br>~~cs~~|**Parameter**<br>~~re~~|**Max**<br>~~re~~|**Unit**<br>~~re~~|
|---|---|---|---|
|R JC<br>~~cs~~<br>~~os~~|Maximum Thermal Resistance,<br>Junction to Case<br>~~re~~<br>~~ee~~|3<br>~~re~~<br>~~ee~~|°C/W<br>~~re~~<br>~~ee~~|
|R JA<br>(Note 1)<br>~~cs~~<br>~~os~~<br>~~cs~~|Maximum Thermal Resistance,<br>Junction to Ambient<br>~~re~~<br>~~ee~~|140<br>~~re~~<br>~~ee~~|°C/W<br>~~re~~<br>~~ee~~|
|R JA<br>(Note 2)<br>~~os~~<br>~~cs~~|Maximum Thermal Resistance,<br>Junction to Ambient<br>~~ee~~|50<br>~~ee~~|°C/W<br>~~ee~~|



1. Mounted on a minimum pad follow by JEDEC standard. 

2. Mounted on a 1 in[2] pad of 2 oz copper follow by JEDEC standard. 

Publication Order Number: **RURD660S9A−F085/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **June, 2024 − Rev. 5** 

**RURD660S9A−F085** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTR**|**ICAL CHARACTERISTICS**|(TC= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Condition**||**Min**|**Typ**|**Max**|**Unit**|
|IR|Instantaneous Reverse<br>Current|VR= 600 V|TC= 25°C|−|−|100|�A|
||||TC= 175°|−|−|500|�A|
|VFM<br>(Note 3)|Instantaneous Forward<br>Voltage|IF= 6 A|TC= 25°C<br>TC= 175°|−<br>−|1.26<br>1.04|1.5<br>−|V<br>V|
|trr<br>(Note 4)|Reverse Recovery Time|IF= 1 A, di/dt = 200 A/�s, VCC= 390 V|TC= 25°C|−|25|33|ns|
|||IF= 6 A, di/dt = 200 A/�s, VCC= 390 V|TC= 25°C<br>TC= 175°|−<br>−|63<br>119|83<br>−|ns<br>ns|
|ta<br>tb<br>Qrr|Reverse Recovery Time<br>Reverse Recovery Charge|IF= 6 A, di/dt = 200 A/�s, VCC= 390 V|TC= 25°C|−<br>−<br>−|23<br>40<br>151|−<br>−<br>−|ns<br>ns<br>nC|
|WAVL||Avalanche Energy (L = 20 mH)||10|−|−|mJ|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse: Test Pulse width = 300 � s, Duty Cycle = 2% 

4. Guaranteed by design 

## **TEST CIRCUIT AND WAVEFORMS** 

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VGE AMPLITUDE AND<br>RG CONTROL dIF/dt<br>t1 AND t2 CONTROL IF L<br>DUT CURRENT<br>RG SENSE<br>+<br>VGE t 1 IGBT −VDD<br>t 2<br>**----- End of picture text -----**<br>


**Figure 1. trr Test Circuit** 

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IF dIdtF ta t rr tb<br>0<br>0.25 IRM<br>IRM<br>**----- End of picture text -----**<br>


**Figure 2. trr Waveforms and Definitions** 

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I = 1 A<br>L = 20 Mh<br>R < 0.1  �<br>EAVL = 1/2LI [2]  [VR(AVL) / (VR(AVL) − VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT −<br>**----- End of picture text -----**<br>


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VAVL<br>IL IL<br>I V<br>t 0 t 1 t 2 t<br>**----- End of picture text -----**<br>


**Figure 3. Avalanche Energy Test Circuit** 

**Figure 4. Avalanche Current and Voltage Waveforms** 

**www.onsemi.com** 

**2** 

**RURD660S9A−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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100 100<br>TC = 175 ° C<br>10<br>10 TC = 125 ° C<br>TC = 175 ° C<br>1<br>TC = 125 ° C<br>1<br>0.1<br>TC = 25 ° C TC = 25 ° C<br>0.1 0.01<br>0.1 0.5 1.0 1.5 2.0 2.5 100 200 300 400 500 600<br>VF, Forward Voltage (V) VR, Reverse Voltage (V)<br>Figure 9. Typical Forward Voltage Drop vs. Figure 10. Typical Reverse Current<br>Forward Current vs. Reverse Voltage<br>90 180<br>Typical Capacitance IF = 6 A<br>80 at 10 V = 24 pF<br>150<br>60 TC = 175 ° C<br>120<br>40 90 TC = 125 ° C<br>60<br>20 TC = 25 ° C<br>10 30<br>0.1 1 10 100 100 200 300 400 500<br>VR, Reverse Voltage (V) di/dt (A/ � s)<br>Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time vs. di/dt<br>15 35<br>30<br>TC = 175 ° C<br>10<br>TC = 125 ° C 20<br>5 TC = 25 ° C 10<br>IF = 6 A<br>0 0<br>100 200 300 400 500 25 50 75 100 125 150 175<br>di/dt (A/ � s) TC, Case Temperature ( ° C)<br>A)<br>�<br>, Forward Current (A)IF , Forward Current (IR<br>Cj, Capacitance (pF)<br>, Reverse Recovery Time (ns)<br>trr<br>, Average Forward Current (A)<br>, Reverse Recovery Current (A)<br>trr IF(AV)<br>**----- End of picture text -----**<br>


**Figure 7. Typical Reverse Recovery Current vs. di/dt** 

**Figure 8. Forward Current Derating Curve** 

**www.onsemi.com** 

**3** 

**RURD660S9A−F085** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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800<br>IF = 6 A<br>TC = 175 ° C<br>600<br>TC = 125 ° C<br>400<br>200 TC = 25 ° C<br>0<br>100 200 300 400 500<br>di/dt [A/ � s]<br>, Reverse Recovery Charge (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


**Figure 12. Reverse Recovery Charge** 

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10<br>D = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>1<br>0.01<br>PDM<br>t 1<br>t 2<br>0.1<br>single pulse *NOTES:<br>1. RthJC = 1.7 ° C/W Typ.<br>2. Duty Factor, D = t1 / t2<br>3. TJM − TC = PDM x ZthJC (t)<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1] 10 [2]<br>t1, Square Wave Pulse Duration (sec)<br>, Thermal Response (t)<br>thJC<br>Z<br>**----- End of picture text -----**<br>


**Figure 11. Transient Thermal Response Curve** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Device Marking**|**Package**|**Shipping**†|
|RURD660S9A−F085|RUR660|TO−252 3 LD<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **DPAK3 6.10x6.54x2.29, 4.57P** CASE 369AS ISSUE B 

## DATE 20 DEC 2023 

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GENERIC<br>{\ aL| I \! PLEASOLSREDEFEREN ERI D O NGWNC LA E O NDADMAMOUNNUTHEALT, IO N SOLDGS EM TER E ICRM CONH N/ I D.DQ U CE TORS MARKING DIAGRAM*<br>vA<br>XXXXXX<br>[S o .1 0 ]B} XXXXXX<br>AYWWZZ<br>XXXX = Specific Device Code<br>*This information is generic. Please refer to<br>device data sheet for actual part marking. A = Assembly Location<br>Pb−Free indicator, “G” or microdot “ = ”, may Y = Year<br>or may not be present. Some products may WW = Work Week<br>not follow the Generic Marking. ZZ = Assembly Lot Code<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13810G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DPAK3 6.10x6.54x2.29, 4.57P PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

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 



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