# Power MOSFET, N Channel, 20 V, 3.5 A, 0.043 ohm, TUMT, Surface Mount

![Product image](https://novapart.co/image/farnell:2769556/)

**URL**: https://novapart.co/products/RUL035N02FRATR/power-mosfet-n-channel-20-v-35-a-0043-ohm-tumt
**SKU**: RUL035N02FRATR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1280
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TUMT |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.5A |
| Drain Source On State Resistance | 0.043ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2769556/)

Datasheet 

## RUL035N02FRA **Nch 20V 3.5A Power MOSFET** 

> e **Outline** VDSS 20V (6) **TUMT6** (5) RDS(on) (Max.) 43m (4) ID 3.5A (1) (2) PD 1.0W (3) ~~= 2~~ **Features** e **Inner circuit** 1) Low on - resistance. (1) Drain (6) (5) (4) (2) Drain 2) 1.5V Drive. (3) Gate 

1) Low on - resistance. 

## 2) 1.5V Drive. 

(4) Source (5) Drain 

3) Built-in G-S Protection Diode. 

(6) Drain : 1 ESD PROTECTION DIODE * 2 BODY DIODE 

4) Small Surface Mount Package (TUMT6). 

5) Pb-free lead plating ; RoHS compliant 

6) AEC-Q101 Qualified 

## **Packaging specifications** 

|Type|Packaging|Taping|
|---|---|---|
||Reel size (mm)|180|
||Tape width (mm)|8|
||Quantity (pcs)|3,000|
||Taping code|TR|
||Marking|XD|



## **Application** 

DC/DC converters 

## **Absolute maximum ratings** (Ta = 25°C) 

|Parameter|Symbol|Value|Unit|
|---|---|---|---|
|Drain - Source voltage|VDSS|20|V|
|Continuous drain current|ID<br>*1<br>~~rr~~<br>~~rr~~|3.5<br>~~rr~~<br>~~ee~~|A<br>~~rr~~<br>~~ee~~|
|Pulsed drain current|ID,pulse<br>*2<br>~~rr~~|7<br>~~ee~~|A<br>~~ee~~|
|Gate - Source voltage|VGSS<br>~~rr ~~<br>~~a~~|10<br> ~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|
|Power dissipation|PD<br>*3|1.0|W|
||PD<br>*4|0.32|W|
|Junction temperature|Tj|150<br>~~ee~~|°C<br>~~ee~~|
|Range of storage temperature|Tstg<br>~~a~~|55 to 150<br>~~a~~<br>~~ee~~|°C<br>~~a~~<br>~~ee~~|



www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

**2019.05 - Rev.C** 

1/11 

Data Sheet 

**RUL035N02FRA** 

## **Thermal resistance** 

|**Thermal resistance**<br>e@||||||
|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|
|||Min.|Typ.|Max.||
|Thermal resistance, junction - ambient|RthJA<br>*3|-|-|125|°C/W|
||RthJA<br>*4|-|-|391|°C/W|



## **Electrical characteristics** (Ta = 25°C) 

|**Electrical characteristics**(Ta = 25°C)a = 25°C)= 25°C)<br>e@|(Ta = 25°C)a = 25°C)= 25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Drain - Source breakdown<br>voltage|V(BR)DSS|VGS= 0V, ID= 1mA|20|-|-|V|
|Breakdown voltage<br>temperature coefficient|ΔV(BR)DSS<br>ΔTj<br>~~a~~|ID=1mA<br>referenced to 25°C<br>~~ee~~|-<br>~~ee~~|20<br>~~ee~~|-|mV/°C<br>~~ee~~|
|Zero gate voltage drain current|IDSS<br>~~a~~|VDS= 20V, VGS= 0V<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|1|A<br>~~ee~~<br>~~ee~~|
|Gate - Source leakage current|IGSS<br>~~a ~~<br>~~a ee~~|VGS=<br>10V, VDS= 0V<br> ~~ee~~<br>~~ee~~|-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~<br>~~ee~~|10<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Gate threshold voltage|VGS (th)|VDS= 10V, ID= 1mA|0.3<br>~~ee ~~|-<br> ~~ee~~|1.0|V<br>~~ee~~|
|Gate threshold voltage<br>temperature coefficient|ΔV(GS)th<br>ΔTj|ID=1mA<br>referenced to 25°C|-|1.9|-|mV/°C|
|Static drain - source<br>on - state resistance|RDS(on)<br>*5<br>~~===:~~<br>~~ee~~|VGS=4.5V, ID=3.5A<br>~~===:~~|-<br>~~===:~~|31<br>~~===:~~|43<br>~~===:~~|m<br> ~~2~~|
|||VGS=2.5V, ID=3.5A<br>~~===:~~|-<br>~~===:~~|38<br>~~===:~~|53<br>~~===:~~||
|||VGS=1.8V, ID=1.8A<br>~~===:~~|-<br>~~===:~~|50<br>~~===:~~|70<br>~~===:~~||
|||VGS=1.5V, ID=0.7A<br>~~===:~~|-<br>~~===:~~|66<br>~~===:~~|93<br>~~===:~~||
|||VGS=4.5V, ID=3.5A, Tj=125°C<br>~~===:~~<br>~~ee~~|-<br>~~===:~~<br>~~ee~~|56<br>~~===:~~<br>~~ee~~|80<br>~~===: ~~||
|Gate input resistannce|RG<br>~~ee~~|f = 1MHz, open drain<br>~~ee~~|-<br>~~ee~~|7.5<br>~~ee~~|-||
|Transconductance|gfs<br>*5<br>~~ee~~|VDS=10V, ID=3.5A<br>~~ee ~~|3.2<br> ~~ee~~|8.5<br>~~ee~~|-|S|



- *1 Limited only by maximum temperature allowed. 

- *2 Pw  10 < ou s, Duty cycle  1% < 

- *3 Mounted on a seramic board (30×30×0.8mm) 

- *4 Mounted on a FR4 (15×20×0.8mm) 

*5 Pulsed 

www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

**2019.05 - Rev.C** 

2/11 

Data Sheet 

**RUL035N02FRA** 

## **Electrical characteristics** (Ta = 25°C) 

|**Electrical characteristics**(Ta = 25°C)a = 25°C)= 25°C)<br>e|(Ta = 25°C)a = 25°C)= 25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Input capacitance|Ciss|VDS= 10V<br>f = 1MHz<br>VGS= 0V|-|460|-|pF|
|Output capacitance|Coss||-|110|-||
|Reverse transfer capacitance|Crss||-|60|-||
|Turn - on delay time|td(on)<br>*5|VDD 10V, VGS= 4.5V<br>ID= 1.8A<br>RL= 5.6<br>RG= 10<br>~~|~~<br>~~ee:~~<br>~~|~~|-|10|-|ns|
|Rise time|tr<br>*5<br>~~|~~<br>~~a~~||-<br>~~|~~|20<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|Turn - off delay time|td(off)<br>*5<br>~~||~~<br>~~a~~||-<br>~~|~~<br>~~|~~<br>~~|~~|40<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|Fall time|tf<br>*5<br>~~|~~<br>~~a~~||-<br>~~|~~<br>~~|~~<br>~~|~~|50<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||



## **Gate Charge characteristics** (Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Total gate charge|Qg<br>*5|VDD 10, ID=3.5A<br>VGS= 4.5V|-|5.7|-|nC|
|Gate - Source charge|Qgs<br>*5||-|1.1|-||
|Gate - Drain charge|Qgd<br>*5||-|0.9|-||



## **Body diode electrical characteristics** (Source-Drain)(Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Inverse diode continuous,<br>forward current|IS<br>*1|Ta= 25°C|-|-|0.8|A|
|Forward voltage|VSD<br>*5|VGS= 0V, Is= 0.8A|-|-|1.2|V|



www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

3/11 

**2019.05 - Rev.C** 

Data Sheet 

**RUL035N02FRA** 

## **Electrical characteristic curves** 

## Fig.1 Power Dissipation Derating Curve 

## Fig.2 Maximum Safe Operating Area 

**==> picture [234 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br> max. [%]<br>D<br>/P<br>D<br>Power Dissipation  : P<br>**----- End of picture text -----**<br>


**==> picture [236 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Operation in this area<br>is limited by RDS(on)<br>( VGS = 10V  PW = 100 s<br>10<br>PW = 1ms<br>1<br>PW = 10ms<br>DC Operation<br>0.1 Ta=25ºC pos poi dani<br>Single Pulse<br>Mounted on a ceramic board.<br>(30mm 30mm 0.8mm)<br>0.01<br>0.1 1 10 100<br> [A]<br>D<br>Drain Current : I<br>**----- End of picture text -----**<br>


Junction Temperature : Tj [ ° C] 

Drain - Source Voltage : VDS [V] 

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 

Fig.4 Single Pulse Maxmum Power dissipation 

**==> picture [474 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 —— 1000 ef<br>Ha T a =25ºC a a = T a =25ºC a<br>| Single Pulse a | | Single Pulse me<br>| i oom tH<br>1<br>P| 100<br>pt A top     D=1 | Pt<br> D=0.5<br>a nt i J<br>0.1 oo [ —] a  D=0.1 |=| PN|<br> D=0.05<br>= —e  D=0.01 A } NII<br>©7AAaa| | bottom  Signle :| 10 mh) es) ea |ee<br>0.01 —— Rth(ch-a)=125ºC/W — po TI NSTITT<br>[| = PTE<br>—aatie Rth(ch-a)(t)=r(t) x Rth(ch-a) = |NE<br>Mounted on ceramic board = |<br>0.001 eenAOsep (30mm 30mm rH 0.8mm) | 1 aee| |Th|<br>0.0001 0.01 1 100 0.0001 0.01 1 100<br>(t)<br>Peak Transient Power :  P(W)<br>Normalized Transient Thermal Resistance : r<br>**----- End of picture text -----**<br>


Pulse Width : PW [s] 

Pulse Width : PW [s] 

www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

**2019.05 - Rev.C** 

4/11 

Data Sheet 

**RUL035N02FRA** 

## **Electrical characteristic curves** 

## Fig.5 Typical Output Characteristics(I) 

## Fig.6 Typical Output Characteristics(II) 

**==> picture [479 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ta=25ºC VGS=4.5V Ta=25ºC<br>3 Pulsed VGS=4.5V 3 VGS=2.5V Pulsed<br>VGS=2.5V VGS=1.8V VGS=1.5V<br>VGS=1.8V<br>2 2<br>VGS=1.5V VGS=1.3V<br>1 fo) 1 [-<br>VGS=1.2V<br>VGS=1.3V<br>0 TO.Yy Wan VGS=1.1V _ 0 —_ee sian VGS=1.1V Co an<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10<br> [A]  [A]<br>D D<br>Drain Current : I Drain Current : I<br>**----- End of picture text -----**<br>


Drain - Source Voltage : VDS [V] 

Drain - Source Voltage : VDS [V] 

**==> picture [233 x 259] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.7 Breakdown Voltage<br>    vs. Junction Temperature<br>60 —<br>VGS = 0V<br>ID = 1mA<br>pulsed<br>40 L_<br>ef | | tt<br>20<br>0 PF yt} | fd<br>-50 0 50 100 150<br>Junction Temperature : Tj [ C]<br> [V]<br>(BR)DSS<br>Drain - Source Breakdown Voltage : V<br>**----- End of picture text -----**<br>


**==> picture [10 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
 [A]<br>D<br>Drain Current : I<br>**----- End of picture text -----**<br>


Fig.8 Typical Transfer Characteristics 

Gate - Source Voltage : VGS [V] 

www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

5/11 

**2019.05 - Rev.C** 

Data Sheet 

**RUL035N02FRA** 

0 

## **Electrical characteristic curves** 

Fig.9 Gate Threshold Voltage vs. Junction Temperature 

**==> picture [234 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 T ]<br>VDS = 10V<br>ID = 1mA<br>pulsed<br>1 “a0<br>><br>0<br>-50 0 50 100 150<br>Junction Temperature : Tj [ C]<br> [V]<br>GS(th)<br>Gate Threshold Voltage : V<br>**----- End of picture text -----**<br>


Fig.10 Transconductance vs. Drain Current 

**==> picture [231 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>| SS| VDS= 10V 2aeee<br>= Pulsed Seasses<br>Perr<br>10 ees Ta T = a=25 25ºC ºC  TINA<br>Ta=75ºC \>> a<br>T a =125ºC Nigger ET<br>WA}<br>1 ED” an) ANN<br>FA}<br>er 25st oes eet<br>7<br>PAA eeee<br>Co CoC<br>0.1<br>0.01 0.1 1 10<br>Drain Current : ID [A]<br> [S]<br>fs<br>Transconductance : g<br>**----- End of picture text -----**<br>


Fig.11 Drain CurrentDerating Curve 

Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

**==> picture [475 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>P+ I p= 3 . 5A Pulsed<br>1<br>ERR EN al<br>~ ao ree TTT Ties |<br>SENG pee<br>0.8 \ ol ACTA<br>0.6<br>0.4 TTT IN\ \ © 40 CANESANo<br>SeeaeeN CHOSE<br>0.2<br>0<br>pti ttt | CO<br>0 12 3 4 5 6 7 8 9<br>-25 0 25 50 75 100 125 150<br>Junction Temperature : Tj [ºC] Gate - Source Voltage : VGS [V]<br>]<br> [m<br> max. (%)<br>D DS(on)<br>/I<br>D<br>: R<br>: I<br>Drain Current Dissipation<br>Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

**2019.05 - Rev.C** 

6/11 

Data Sheet 

**RUL035N02FRA** 

## **Electrical characteristic curves** 

Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) 

Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 

**==> picture [484 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 po 60<br>a ee 1]<br>PTT ETT |<br>SEH SETH Noes ov<br>rT TT ETT TTT] 50 We<br>CECI 40 LLL YL.<br>C 1 00 fC Ta=25°CTa=75°C A C 30 [A ““a<br>az,raT. = —2 5° AQV NEN T T<br>||fe<br>NN NT 20<br>Pe |<br>VGS = 10V<br>Poeeee _| 10 ID=3.5A<br>|| _ pulsed<br>10 ETT LUA EIN 0 Pt | LLL<br>0 . 01 0 . 1 1 10<br>-50 -25 0 25 50 75 100 125 150<br>] ]<br> [m  [m<br>DS(on) DS(on)<br>: R : R<br>Static Drain - Source On-State Resistance  Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


Drain Current : ID [A] 

Junction Temperature : Tj [ºC] 

www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

7/11 

**2019.05 - Rev.C** 

Data Sheet 

**RUL035N02FRA** 

## **Electrical characteristic curves** 

**==> picture [268 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.15 Static Drain - Source On - State<br>      Resistance vs. Drain Current(II)<br>1000<br>a |<br>ee ell<br>PU ET<br>C 100 fCBRENT,=25°CTa= —25°C NATfe<br>Po<br>TTTT eK KK TT<br>A |<br>PT TTT NTT TT<br>|<br>aL LULETELT<br>0 . 01 0 . 1 1 10<br>]<br> [m<br>DS(on)<br>: R<br>: R<br>Static Drain - Source On-State Resistance<br>Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


**==> picture [24 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
]<br> [m<br>DS(on)<br>: R<br>Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) 

Drain Current : ID [A] 

Drain Current : ID [A] 

Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(V) 

**==> picture [474 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.17 Static Drain - Source On - State Fig.18 Static Drain - Source On - State<br>  Resistance vs. Drain Current(IV)   Resistance vs. Drain Current(V)<br>1000  a 1000  a<br>PTEETTT} Pulsedvoor fll P|EHHTy<br>Pt | Pulsed]<br>| oT ael<br>Pp T a= 125°C ell ll<br>merere ATT a alll<br>G Ta= 25° NG Ves =1 .8V. \ |<br>100 \N Gq Voes=2.5V \<br>Se 100 -—- Ves<br>_ ||| | | | eeSoS<br>Ne Sl PNOe ee eee<br>P| TTT EN TTT EE CUINNININKAN ee TTTT<br>aSaif TrOU C IIT<br>a a  al<br>ot0 .01 LENE 0 . 1 LUE 1 EEL 10 ot0 . 01 EL 0 . 1 ELAIE 1 ELT<br>Drain Current : ID [A] Drain Current : ID [A]<br>] ]<br> [m  [m<br>DS(on) DS(on)<br>: R : R<br>Static Drain - Source On-State Resistance  Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


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8/11 

**2019.05 - Rev.C** 

Data Sheet 

**RUL035N02FRA** 

## **Electrical characteristic curves** 

**==> picture [255 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.19 Typical Capacitance<br>vs. Drain - Source Voltage<br>100 SS<br>eeeee | T2= o<br>CCMEEN CC| CONC<br>—————<br>TRI<br>eeePCIi eet emt rea<br>Capacitance : C [pF] Switching Time : t [ns]<br>**----- End of picture text -----**<br>


Drain - Source Voltage : VDS [V] 

Fig.21 Dynamic Input Characteristics 

**==> picture [11 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
 [V]<br>GS<br>Gate - Source Voltage : V<br>**----- End of picture text -----**<br>


**==> picture [11 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
 [A]<br>S<br>Source Current : I<br>**----- End of picture text -----**<br>


Total Gate Charge : Qg [nC] 

Fig.20 Switching Characteristics 

Drain Current : ID [A] 

Fig.22 Source Current vs. Source Drain Voltage 

Source-Drain Voltage : VSD [V] 

www.rohm.com © 2013  ROHM Co., Ltd. All rights reserved. 

**2019.05 - Rev.C** 

9/11 

Data Sheet 

**RUL035N02FRA** 

## � **Measurement circuits** 

Fig.1-1  Switching Time Measurement Circuit 

**==> picture [63 x 52] intentionally omitted <==**

Fig.2-1  Gate Charge Measurement Circuit 

**==> picture [62 x 55] intentionally omitted <==**

Fig.1-2 Switching Waveforms 

**==> picture [142 x 81] intentionally omitted <==**

Fig.2-2  Gate Charge Waveform 

**==> picture [118 x 101] intentionally omitted <==**

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10/11 

**2019.05 - Rev.C** 

Data Sheet 

**RUL035N02FRA** 

## **Dimensions** (Unit : mm) 

## **TUMT6** 

## **Patterm of terminal position areas** 

Dimension in mm/inches 

www.rohm.com 

**2019.05 - Rev.C** 

11/11 

© 2013  ROHM Co., Ltd. All rights reserved. 



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- [Supplier page](https://es.farnell.com/rohm/rul035n02fratr/mosfet-aec-q101-n-ch-20v-tumt/dp/2769556)
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