# Power MOSFET, Low Voltage, P Channel, 20 V, 3.2 A, 0.125 ohm, TSMT, Surface Mount

![Product image](https://novapart.co/image/farnell:1525561/)

**URL**: https://novapart.co/products/RTR030P02TL/power-mosfet-low-voltage-p-channel-20-v-32-a-0125
**SKU**: RTR030P02TL
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2280
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSMT |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.2A |
| Drain Source On State Resistance | 0.125ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1525561/)

RTR030P02 

## Transistors 

## 2.5V Drive Pch MOS FET 

## **RTR030P02** 

**==> picture [513 x 534] intentionally omitted <==**

**----- Start of picture text -----**<br>
RTR030P02<br>� Structure � External dimensions  (Unit : mm)<br>Silicon P-channel<br>TSMT3<br>MOS FET 1.0MAX<br>2.9 0.85<br>0.4 0.7<br>(3)<br>� Features<br>1) Low On-resistance.  (1) (2)<br>0.95 0.95<br>2) Built-in G-S Protection Diode.  1.9 0.16<br>3) Small Surface Mount Package (TSMT3).<br>(1) Gate Each lead has same dimensions<br>(2) Source<br>Abbreviated symbol : TV<br>(3) Drain<br>� Application<br>Power switching, DC / DC converter.<br>� Packaging specifications  � Equivalent circuit<br>Package Taping (3)<br>Type Code TL<br>Basic ordering unit (pieces) 3000<br>RTR030P02<br>(1) ∗ 2<br>∗ 1<br>� Absolute maximum ratings  (Ta=25°C)<br>Parameter Symbol Limits Unit (2) (1) Gate<br>Drain-source voltage VDSS − 20 V ∗ 1 ESD PROTECTION DIODE (2) Source<br>∗ 2 BODY DIODE (3) Drain<br>Gate-source voltage VGSS ± 12 V<br>Continuous ID ± 3.0 A<br>Drain current Pulsed IDP ∗ 1 ± 12 A<br>Source current  Continuous IS − 0.8 A<br>(Body diode) Pulsed ISP ∗ 1 − 3.2 A<br>Total power dissipation PD ∗ 2 1.0 W<br>Channel temperature Tch 150 ° C<br>Range of Storage temperature Tstg − 55 to +150 ° C<br>∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1%<br>∗ 2 Mounted on a ceramic board<br>� Thermal resistance<br>Parameter Symbol Limits Unit<br>Channel to ambient Rth (ch-a) ∗ 125 ° C / W<br>∗  Mounted on a ceramic board.<br>0~0.1<br>New Designs<br>Not Recommended for<br>1.6 2.8<br>0.60.3~<br>**----- End of picture text -----**<br>


Rev.A 

1/4 

RTR030P02 

Transistors 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(Ta=25°C)|||
|---|---|---|
|Parameter<br>Symbol<br>Min.<br>Typ.<br>Max.|Unit<br>Conditions||
|IGSS<br>Gate-source leakage<br>−<br>−<br>±10|µA<br>VGS=±12V, VDS=0V||
|Yfs<br>V(BR) DSS<br>IDSS<br>VGS (th)<br>RDS (on)<br>Ciss<br>Coss<br>Crss<br>td (on)<br>tr<br>td (off)<br>tf<br>Qg<br>Qgs<br>Qgd<br>Drain-source breakdown voltage<br>Zero gate voltage drain current<br>Gate threshold voltage<br>Static drain-source on-state<br>resistance<br>Forward transfer admittance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time<br>Total gate charge<br>Gate-source charge<br>Gate-drain charge<br>VDD  −15V<br>−20<br>−<br>−<br>V<br>ID=−1mA, VGS=0V<br>−<br>−<br>−1<br>µA<br>VDS=−20V, VGS=0V<br>−0.7<br>−<br>−2.0<br>V<br>VDS=−10V, ID=−1mA<br>−<br>55<br>75<br>ID=−3.0A, VGS=−4.5V<br>−<br>60<br>85<br>mΩ<br>mΩ<br>mΩ<br>ID=−3.0A, VGS=−4.0V<br>−<br>90<br>125<br>ID=−1.5A, VGS=−2.5V<br>2.5<br>−<br>−<br>S<br>VDS=−10V, ID=−1.5A<br>−<br>840<br>−<br>pF<br>VDS=−10V<br>−<br>140<br>100<br>−<br>pF<br>VGS=0V<br>−<br>12<br>−<br>pF<br>f=1MHz<br>−<br>20<br>−<br>ns<br>−<br>50<br>−<br>ns<br>−<br>20<br>−<br>ns<br>−<br>9.3<br>−<br>ns<br>−<br>1.6<br>−<br>nC<br>−<br>2.6<br>−<br>nC<br>VGS= −4.5V<br>−<br>−<br>nC<br>ID= −3.0A<br>VDD−15V<br>ID=−1.5A<br>VGS=−4.5V<br>RL=10Ω<br>RG=10Ω<br>∗Pulsed<br>∗<br>∗<br>∗<br>∗<br>∗<br>∗<br>�**Body diode characteristics**(Source-drain) (Ta=25°C)<br>VSD<br>−<br>−<br>−1.2<br>V<br>Forward voltage<br>IS=−0.8A, VGS=0V<br>Parameter<br>Symbol<br>Min.<br>Typ.<br>Max.<br>Unit<br>Conditions<br>Not Recommended for<br>New Designs|||
||Rev.A|2/4|



RTR030P02 

## Transistors 

## � **Electrical characteristic curves** 

**==> picture [513 x 550] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1000 1000<br>VDS = − 10V Ta = 25 ° C VGS = − 4.5V<br>Pulsed Pulsed Pulsed<br>1 VVVGSGSGS = −= −= − 2.5V4.0V4.5V TaTaTaTa ==== − 125752525 °° CC °° CC<br>0.1 Ta = 125 ° C 100 100<br>Ta = 75 ° C<br>Ta = 25 ° C<br>Ta = − 25 ° C<br>0.01<br>0.001 1 10<br>0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10 0.1 1 10<br>GATE-SOURCE VOLTAGE :  − VGS (V) DRAIN  CURRENT :  − ID (A) DRAIN  CURRENT :  − ID (A)<br>Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Fig.3 Static Drain-Source On-State<br>Resistance vs. Drain Current Resistance vs. Drain Current<br>1000 1000 10<br>VGS = − 4V VGS = − 2.5V VGS = 0V<br>Pulsed Pulsed Pulsed<br>Ta = 125 ° C<br>Ta = 75 ° C<br>Ta = 25 ° C<br>Ta = − 25 ° C 1<br>Ta = 125 ° C<br>Ta = 75 ° C<br>100 100 Ta = 25 ° C<br>Ta = − 25 ° C<br>Ta = 125 ° C 0.1<br>Ta = 75 ° C<br>Ta = 25 ° C<br>Ta = − 25 ° C<br>10 10 0.01<br>0.1 1 10 0.1 1 10 0 0.5 1.0 1.5 2.0<br>DRAIN  CURRENT :  − ID (A) DRAIN  CURRENT :  − ID (A) SOURCE-DRAIN VOLTAGE :  − VSD (V)<br>Fig.4 Static Drain-Source On-State  Fig.5 Static Drain-Source On-State  Fig.6 Reverse Drain Current<br>Resistance vs. Drain Current Resistance vs. Drain Current vs.Source-Drain Voltage<br>10000 Ta = 25 ° C 10000 Ta = 25 ° C 8 Ta = 25 ° C<br>f = 1MHz VDD = − 15V 7 VDD = − 15V<br>VGS = 0V VGS = − 4.5V ID = − 3A<br>1000 RG = 10 Ω 6 RG = 10 Ω<br>Pulsed Pulsed<br>1000<br>Ciss 5<br>tf<br>100 4<br>td (off)<br>3<br>100 Coss tr<br>Crss 10 td (on) 2<br>1<br>10 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0 2 4 6 8 10 12<br>DRAIN-SOURCE VOLTAGE :  − VDS (V) DRAIN  CURRENT :  − ID (A) TOTAL GATE CHARGE : Qg (nC)<br>Fig.7 Typical Capacitance Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics<br>vs. Drain-Source Voltage<br>New Designs<br>Not Recommended for<br>) Ω ) Ω<br> (m  (m<br> (A)ID − RDS (on) RDS (on)<br>DRAIN CURRENT :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :<br>) (m Ω ) (m Ω  (A)IDR −<br>DS (on) DS (on)<br>R R<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :  REVERSE DRAIN CURRENT :<br> (V)<br>GS<br>V<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) −<br>GATE-SOURCE VOLTAGE :<br>**----- End of picture text -----**<br>


Rev.A 

3/4 

RTR030P02 

Transistors 

## � **Measurement circuits** 

**==> picture [513 x 495] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID VDS VGS 10%<br>90%<br>RL<br>D.U.T. 90% 90%<br>RG<br>VDD 10% 10%<br>VDS<br>td(on) tr td(off) tr<br>ton toff<br>Fig.10  Switching Time Test Circuit [Fig.11  Switching Time Waveforms]<br>VG<br>VGS ID<br>VDS Qg<br>IG (Const.) RL VGS<br>D.U.T.<br>RG Qgs Qgd<br>VDD<br>Charge<br>Fig.12  Gate Charge Test Circuit Fig.13  Gate Charge Waveform<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


Rev.A 

4/4 

Appendix 

Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 



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